Showing 1–9 of 9 results for author: Van Campenhout, J

Low-Loss Silicon Directional Coupler with Arbitrary Coupling Ratios for Broadband Wavelength Operation Based on Bent Waveguides

Authors: Ahmed H. El-Saeed, Alaa Elshazly, Hakim Kobbi, Rafal Magdziak, Guy Lepage, Chiara Marchese, Javad Rahimi Vaskasi, Swetanshu Bipul, Dieter Bode, Marko Ersek Filipcic, Dimitrios Velenis, Maumita Chakrabarti, Peter De Heyn, Peter Verheyen, Philippe Absil, Filippo Ferraro, Yoo** Ban, Joris Van Campenhout, Wim Bogaerts, Qingzhong Deng

Abstract: We demonstrate a design for a high-performance $2 \times 2$ splitter meeting the essential requirements of broadband coupling, support for arbitrary coupling ratio, ultra low-loss, high fabrication tolerance, and a compact footprint. This is achieved based on a rigorous coupled mode theory analysis of the broadband response of the bent directional coupler (DC) and by demonstrating a full couplin… ▽ More We demonstrate a design for a high-performance $2 \times 2$ splitter meeting the essential requirements of broadband coupling, support for arbitrary coupling ratio, ultra low-loss, high fabrication tolerance, and a compact footprint. This is achieved based on a rigorous coupled mode theory analysis of the broadband response of the bent directional coupler (DC) and by demonstrating a full coupling model, with measured broadband values of 0.4, 0.5, 0.6, and 0.7. As a benchmark, we demonstrate a 0.5:0.5 splitter that significantly reduces coupling variation from 0.391 in the traditional DC to just 0.051 over an 80 nm wavelength span. This represents a remarkable 7.67 times reduction in coupling variation. Further, newly-invented low-loss bends were used in the proposed design leading to an ultra low-loss design with negligible excess loss ($\mathrm{0.003 \pm 0.013 \ dB}$). The proposed 0.5:0.5 silicon strip waveguide-based design is tolerant and shows consistently low coupling variation over a full 300 mm wafer showcasing a maximum cross coupling variation of 0.112 over 80 nm wavelength range, at the extreme edge of the wafer. Futhermore, we augmented the wafer map** with a waveguide width fabrication tolerance study, confirming the tolerance of the device with a mere 0.061 maximum coupling variation with a waveguide width deviation of $\pm 20$ nm over 80 nm wavelength range. These specs make the proposed splitter an attractive component for practical applications with mass production. △ Less

Submitted 9 April, 2024; originally announced April 2024.

32x100 GHz WDM filter based on ultra-compact silicon rings with a high thermal tuning efficiency of 5.85 mW/pi

Authors: Qingzhong Deng, Ahmed H. El-Saeed, Alaa Elshazly, Guy Lepage, Chiara Marchese, Hakim Kobbi, Rafal Magdziak, Jeroen De Coster, Neha Singh, Marko Ersek Filipcic, Kristof Croes, Dimitrios Velenis, Maumita Chakrabarti, Peter De Heyn, Peter Verheyen, Philippe Absil, Filippo Ferraro, Yoo** Ban, Joris Van Campenhout

Abstract: To the best of our knowledge, this paper has achieved the lowest thermal tuning power (5.85 mW/pi) for silicon rings with FSR>=3.2 THz, and the first silicon ring-based WDM-32x100 GHz filter. To the best of our knowledge, this paper has achieved the lowest thermal tuning power (5.85 mW/pi) for silicon rings with FSR>=3.2 THz, and the first silicon ring-based WDM-32x100 GHz filter. △ Less

Submitted 7 November, 2023; originally announced November 2023.

Comments: 3 pages submitted for conference

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Authors: Yannick De Koninck, Charles Caer, Didit Yudistira, Marina Baryshnikova, Huseyin Sar, **-Yi Hsieh, Saroj Kanta Patra, Nadezda Kuznetsova, Davide Colucci, Alexey Milenin, Andualem Ali Yimam, Geert Morthier, Dries Van Thourhout, Peter Verheyen, Marianna Pantouvaki, Bernardette Kunert, Joris Van Campenhout

Abstract: Silicon photonics is a rapidly develo** technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integratio… ▽ More Silicon photonics is a rapidly develo** technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxial growth of III-V materials remains the pinnacle in realizing cost-effective on-chip light sources. Here, we report the first electrically driven GaAs-based multi-quantum-well laser diodes fully fabricated on 300 mm Si wafers in a CMOS pilot manufacturing line. GaAs nano-ridge waveguides with embedded p-i-n diodes, InGaAs quantum wells and InGaP passivation layers are grown with high quality at wafer scale, leveraging selective-area epitaxy with aspect-ratio trap**. After III-V facet patterning and standard CMOS contact metallization, room-temperature continuous-wave lasing is demonstrated at wavelengths around 1020 nm in more than three hundred devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz, and laser operation up to 55 °C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond. △ Less

Submitted 20 July, 2023; originally announced September 2023.

Comments: 40 pages with 16 figures. pdf includes supplementary information

Wafer-scale Graphene Electro-absorption Modulators Fabricated in a 300mm CMOS Platform

Authors: Chenghan Wu, Steven Brems, Didit Yudistira, Daire Cott, Alexey Milenin, Kevin Vandersmissen, Arantxa Maestre, Alba Centeno, Amaia Zurutuza, Joris Van Campenhout, Cedric Huyghebaert, Dries Van Thourhout, Marianna Pantouvaki

Abstract: Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a path to large-scale manufacturing with high yield at low cost. Here, we select single-layer graphene electro-absorption modulators as test vehicle and establish th… ▽ More Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a path to large-scale manufacturing with high yield at low cost. Here, we select single-layer graphene electro-absorption modulators as test vehicle and establish their wafer-scale integration in a 300mm pilot CMOS foundry environment. A hardmask is used to shape graphene, while tungsten-based contacts are fabricated using the damascene approach to enable CMOS-compatible fabrication. By analyzing data from hundreds of devices per wafer, the impact of specific processing steps on the performance could be identified and optimized. After optimization, modulation depth of 50 $\pm$ 4 dB/mm is demonstrated on 400 devices measured using 6 V peak-to-peak voltage. The electro-optical bandwidth is up to 15.1 $\pm$ 1 1.8 GHz for 25$μ$m-long devices. The results achieved are comparable to lab-based record-setting graphene devices of similar design and CVD graphene quality. By demonstrating the reproducibility of the results across hundreds of devices, this work resolves the bottleneck of graphene wafer-scale integration. Furthermore, CMOS-compatible processing enables co-integration of graphene-based devices with other photonics and electronics building blocks on the same chip, and for high-volume low-cost manufacturing. △ Less

Submitted 28 March, 2023; originally announced April 2023.

Efficient resonance management in ultrahigh-Q one-dimensional photonic crystal nanocavities fabricated on 300 mm SOI CMOS platform

Authors: Weiqiang Xie, Peter Verheyen, Marianna Pantouvaki, Joris Van Campenhout, Dries Van Thourhout

Abstract: Photonic crystal (PhC) nanocavities have demonstrated unique capabilities in terms of light confinement and manipulation. As such, they are becoming attractive for the design of novel resonance-based photonic integrated circuits (PICs). Here two essential challenges arise however - how to realize ultrahigh-Q PhC cavities using standard fabrication processes compatible with large volume fabrication… ▽ More Photonic crystal (PhC) nanocavities have demonstrated unique capabilities in terms of light confinement and manipulation. As such, they are becoming attractive for the design of novel resonance-based photonic integrated circuits (PICs). Here two essential challenges arise however - how to realize ultrahigh-Q PhC cavities using standard fabrication processes compatible with large volume fabrication, and how to efficiently integrate them with other standard building blocks, available in exiting PIC platforms. In this work, we demonstrate ultrahigh-Q 1D PhC nanocavities fabricated on a 300 mm SOI wafer by optical lithography, with a record Q factor of up to 0.84 million. Moreover, we show efficient mode management in those oxide embedded cavities by coupling them with an access waveguide and realize two critical components: notch filters and narrow-band reflectors. In particular, they allow both single-wavelength and multi-wavelength operation, at the desired resonant wavelengths, while suppressing all other wavelengths over a broad wavelength range (>100 nm). Compared to traditional cavities, this offers a fantastic strategy for implementing resonances precisely in PIC designs with more freedom in terms of wavelength selectivity and the control of mode number. Given their compatibility with optical lithography and compact footprint, the realized 1D PhC nanocavities will be of profound significance for designing compact and novel resonance-based photonic components on large scale. △ Less

Submitted 2 September, 2020; originally announced September 2020.

Optical Pre-Emphasis by Cascaded Graphene Electro Absorption Modulators

Authors: V. Sorianello, G. Contestabile, M. Midrio, M. Pantouvaki, I. Asselbergs, J. Van Campenhout, C. Huyghebaerts, M. Romagnoli

Abstract: A simple optical circuit made by a cascade of two graphene-on-silicon electro absorption modulators (EAMs) of different length is used for the optical pre-emphasis of 10 Gb/s non-return-to-zero (NRZ) signals by delay-inverse-weight compensation. Transmission up to 100 km on single mode fiber (SMF) without dispersion compensation is reported, showing also the large performance advantage (6 dB in ba… ▽ More A simple optical circuit made by a cascade of two graphene-on-silicon electro absorption modulators (EAMs) of different length is used for the optical pre-emphasis of 10 Gb/s non-return-to-zero (NRZ) signals by delay-inverse-weight compensation. Transmission up to 100 km on single mode fiber (SMF) without dispersion compensation is reported, showing also the large performance advantage (6 dB in back-to back and around 5 dB in transmission) in respect of the conventional single EAM transmitter configuration. △ Less

Submitted 28 February, 2020; originally announced March 2020.

Graphene Phase Modulator

Authors: V. Sorianello, M. Midrio, G. Contestabile, I. Asselberg, J. Van Campenhout, C. Huyghebaerts, I. Goykhman, A. K. Ott, A. C. Ferrari, M. Romagnoli

Abstract: We demonstrate a 10Gb/s Graphene Phase Modulator (GPM) integrated in a Mach-Zehnder interferometer configuration. This is a compact device, with a phase-shifter length of only 300$μ$m, and 35dB extinction ratio. The GPM has modulation efficiency of 0.28Vcm, one order of magnitude higher compared to state-of-the-art depletion p-n junction Si phase modulators. Our GPM operates with 2V peak-to-peak d… ▽ More We demonstrate a 10Gb/s Graphene Phase Modulator (GPM) integrated in a Mach-Zehnder interferometer configuration. This is a compact device, with a phase-shifter length of only 300$μ$m, and 35dB extinction ratio. The GPM has modulation efficiency of 0.28Vcm, one order of magnitude higher compared to state-of-the-art depletion p-n junction Si phase modulators. Our GPM operates with 2V peak-to-peak driving voltage in a push-pull configuration, and it has been tested in a binary transmission of a non-return-to-zero data stream over 50km single mode fibre. This device is the key building block for graphene-based integrated photonics, enabling compact and energy efficient hybrid Si-graphene modulators for telecom, datacom and other applications △ Less

Submitted 6 March, 2017; originally announced April 2017.

Journal ref: Nature Photonics, 12, 40 (2018)

Room Temperature InP DFB Laser Array Directly Grown on (001) Silicon

Authors: Zhechao Wang, Bin Tian, Marianna Pantouvaki, Weiming Guo, Philippe Absil, Joris Van Campenhout, Clement Merckling, Dries Van Thourhout

Abstract: Fully exploiting the silicon photonics platform requires a fundamentally new approach to realize high-performance laser sources that can be integrated directly using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon… ▽ More Fully exploiting the silicon photonics platform requires a fundamentally new approach to realize high-performance laser sources that can be integrated directly using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Here, using a selective area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback (DFB) laser array grown on (001)-Silicon operating at room temperature and suitable for wavelength-division-multiplexing applications. The novel epitaxial technology suppresses threading dislocations and anti-phase boundaries to a less than 20nm thick layer not affecting the device performance. Using an in-plane laser cavity defined by standard top-down lithographic patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective co-integration with photonic circuits and III-V FINFET logic. △ Less

Submitted 13 January, 2015; originally announced January 2015.

An octave spanning mid-infrared frequency comb generated in a silicon nanophotonic wire waveguide

Authors: Bart Kuyken, Takuro Ideguchi, Simon Holzner, Ming Yan, Theodor W. Haensch, Joris Van Campenhout, Peter Verheyen, Stéphane Coen, Francois Leo, Roel Baets, Gunther Roelkens, Nathalie Picque

Abstract: We demonstrate an octave-spanning frequency comb with a spectrum covering wavelengths from 1,540 nm up to 3,200 nm. The supercontinuum is generated by pum** a 1-cm long dispersion engineered silicon wire waveguide by 70 fs pulses with an energy of merely 15 pJ. We confirm the phase coherence of the output spectrum by beating the supercontinuum with narrow bandwidth CW lasers. We show that the ex… ▽ More We demonstrate an octave-spanning frequency comb with a spectrum covering wavelengths from 1,540 nm up to 3,200 nm. The supercontinuum is generated by pum** a 1-cm long dispersion engineered silicon wire waveguide by 70 fs pulses with an energy of merely 15 pJ. We confirm the phase coherence of the output spectrum by beating the supercontinuum with narrow bandwidth CW lasers. We show that the experimental results are in agreement with numerical simulations. △ Less

Submitted 16 May, 2014; originally announced May 2014.