-
Phase transformation-induced superconducting aluminium-silicon alloy rings
Authors:
B. C. Johnson,
M. Stuiber,
D. L. Creedon,
A. Berhane,
L. H. Willems van Beveren,
S. Rubanov,
J. H. Cole,
V. Mourik,
A. R. Hamilton,
T. L. Duty,
J. C. McCallum
Abstract:
The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires fabricated with silicon-on-insulator (SOI). Aluminium from deposited contact electrodes is found to interdiffuses with the Si nanowire structures to form an Al-…
▽ More
The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires fabricated with silicon-on-insulator (SOI). Aluminium from deposited contact electrodes is found to interdiffuses with the Si nanowire structures to form an Al-Si alloy along the entire length of the predefined nanowire device over micron length scales at temperatures well below that of the Al-Si eutectic. The resultant transformed nanowire structures are layered in geometry with a continuous Al-Si alloy wire sitting on the buried oxide of the SOI and a residual Si cap sitting on top of the wire. The phase transformed material is conformal with any predefined device patterns and the resultant structures are exceptionally smooth-walled compared to similar nanowire devices formed by silicidation processes. The superconducting properties of a mesoscopic AlSi ring formed on a SOI platform are investigated. Low temperature magnetoresistance oscillations, quantized in units of the fluxoid, h/2e, are observed.
△ Less
Submitted 12 July, 2022;
originally announced July 2022.
-
Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions
Authors:
L. H. Willems van Beveren,
D. L. Creedon,
N. Eikenberg,
K. Ganesan,
B. C. Johnson,
G. Chimowa,
D. Churochkin,
S. Bhattacharyya,
S. Prawer
Abstract:
We present a study of the structural and electronic properties of ultra-nanocrystalline diamond films that were modified by adding nitrogen to the gas mixture during chemical vapour deposition growth. Hall bar devices were fabricated from the resulting films to investigate their electrical conduction as a function of both temperature and magnetic field. Through low-temperature magnetoresistance me…
▽ More
We present a study of the structural and electronic properties of ultra-nanocrystalline diamond films that were modified by adding nitrogen to the gas mixture during chemical vapour deposition growth. Hall bar devices were fabricated from the resulting films to investigate their electrical conduction as a function of both temperature and magnetic field. Through low-temperature magnetoresistance measurements, we present strong evidence that the dominant conduction mechanism in these films can be explained by a combination of 3D weak localization (3DWL) and thermally activated hop** at higher temperatures. An anisotropic 3DWL model is then applied to extract the phase-coherence time as function of temperature, which shows evidence of a power law dependence in good agreement with theory.
△ Less
Submitted 10 March, 2020;
originally announced March 2020.
-
Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures
Authors:
L. H. Willems van Beveren,
R. Liu,
H. Bowers,
K. Ganesan,
B. C. Johnson,
J. C. McCallum,
S. Prawer
Abstract:
Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve do** densities of 6 at.%. In order to quantify the diamond crystal dama…
▽ More
Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve do** densities of 6 at.%. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.
△ Less
Submitted 20 June, 2016; v1 submitted 30 January, 2016;
originally announced February 2016.
-
Low temperature transport on surface conducting diamond
Authors:
Mark T. Edmonds,
Laurens H. Willems van Beveren,
Kumar Ganesan,
Nina Eikenberg,
Jiri Cervenka,
Steven Prawer,
Lothar Ley,
Alex R. Hamilton,
Christopher I. Pakes
Abstract:
Magneto-transport measurements were performed on surface conducting hydrogen-terminated diamond (100) hall bars at temperatures between 0.1-5 K in magnetic fields up to 8T.
Magneto-transport measurements were performed on surface conducting hydrogen-terminated diamond (100) hall bars at temperatures between 0.1-5 K in magnetic fields up to 8T.
△ Less
Submitted 19 March, 2013;
originally announced March 2013.
-
Fabrication and Investigation of Nitrogen doped Ultra-Nano-Crystalline Diamond Hall-bar Devices
Authors:
Nina Eikenberg,
Kumar Ganesan,
Kin Kiong Lee,
Mark T. Edmonds,
Laurens H. Willems van Beveren,
Steven Prawer
Abstract:
Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices' electrical properties are in…
▽ More
Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices' electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.
△ Less
Submitted 13 March, 2013;
originally announced March 2013.
-
Progress Towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures
Authors:
Laurens H. Willems van Beveren,
Jeffrey C. McCallum,
Hoe H. Tan,
Chennupati Jagadish
Abstract:
In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diod…
▽ More
In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium (and base) temperature to be used for opto-electronic device characterization.
△ Less
Submitted 11 March, 2013;
originally announced March 2013.
-
CMOS-Compatible Nanowire Biosensors
Authors:
Thanh C. Nguyen,
Wanzhi Qiu,
Matteo Altissimo,
Paul G. Spizzirri,
Laurens H. Willems van Beveren,
Efstratios Skafidas
Abstract:
In this chapter, silicon nanowires that are compatible with CMOS fabrication processes have been described. It has been shown that these nanowires can be functionalized by conjugating monoclonal antibodies to their surface in order to build sensitive biochemical sensors. It has also been shown that by using frequency-based signals, all the necessary components to interrogate these nanowires can be…
▽ More
In this chapter, silicon nanowires that are compatible with CMOS fabrication processes have been described. It has been shown that these nanowires can be functionalized by conjugating monoclonal antibodies to their surface in order to build sensitive biochemical sensors. It has also been shown that by using frequency-based signals, all the necessary components to interrogate these nanowires can be built on low-cost CMOS processes.
△ Less
Submitted 21 February, 2013;
originally announced February 2013.
-
Overlap**-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime
Authors:
Laurens H. Willems Van Beveren,
Kuan Y. Tan,
Nai-Shyan Lai,
Oleh Klochan,
Andrew S. Dzurak,
Alex R. Hamilton
Abstract:
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefo…
▽ More
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefore magneto-transport measurements become challenging. However, from a physical point of view, the study of MOSFET nanostructures in the low electron density regime is very interesting (impurity limited mobility [1], carrier interactions [2,3] and spin-dependent transport [4]) and it is therefore important to come up with solutions [5,6] that work around the problem of a high contact resistance in such devices (c.f. Fig. 1 (a)).
△ Less
Submitted 6 October, 2011;
originally announced October 2011.
-
Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs
Authors:
Laurens H. Willems van Beveren,
Hans Huebl,
Andrea Morello
Abstract:
We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin res…
▽ More
We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin resonance in donor-based semiconductor devices. Here we present the effect of microwave (MW) power and MOSFET biasing conditions on the EDMR signals.
△ Less
Submitted 6 May, 2011;
originally announced May 2011.
-
Overlap**-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime
Authors:
Laurens H. Willems van Beveren,
Kuan Y. Tan,
Nai-Shyan Lai,
Andrew S. Dzurak,
Alex R. Hamilton
Abstract:
We report the fabrication and study of Hall bar MOSFET devices in which an overlap**-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts. Comparison with devices made using a standard single gate show that measurements can be performed at much lower densities and higher channel resistances, despite a reduc…
▽ More
We report the fabrication and study of Hall bar MOSFET devices in which an overlap**-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts. Comparison with devices made using a standard single gate show that measurements can be performed at much lower densities and higher channel resistances, despite a reduced peak mobility. We also observe a voltage threshold shift which we attribute to negative oxide charge, injected during electron-beam lithography processing.
△ Less
Submitted 16 September, 2010;
originally announced September 2010.
-
Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
Authors:
B. C. Johnson,
J. C. McCallum,
L. H. Willems van Beveren,
E. Gauja
Abstract:
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors.…
▽ More
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interface trapped charge and the role of minority carriers in DLTS are investigated. A furnace anneal at 950 $\rm ^{o}$C was found to activate the dopants but did not repair the implantation damage as efficiently as a 1000 $\rm ^{o}$C rapid thermal anneal. No evidence of bulk traps was observed after either of these anneals. The ion- implanted spin-dependent transport device is shown to have expected characteristics using the processing strategy determined in this study.
△ Less
Submitted 26 February, 2010;
originally announced February 2010.
-
Electrically detected magnetic resonance using radio-frequency reflectometry
Authors:
H. Huebl,
R. P. Starrett,
D. R. McCamey,
A. J. Ferguson,
L. H. Willems van Beveren
Abstract:
The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold increased signal-to-noise ratio of the conduction band electron spin resonance and a higher operational bandwidth of > 300 kHz compared to the kHz bandwidth of conve…
▽ More
The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold increased signal-to-noise ratio of the conduction band electron spin resonance and a higher operational bandwidth of > 300 kHz compared to the kHz bandwidth of conventional readout techniques. This increase in temporal resolution provides a method for future direct observations of spin dynamics in the electrical device characteristics.
△ Less
Submitted 12 July, 2009;
originally announced July 2009.
-
Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon
Authors:
A. Morello,
C. C. Escott,
H. Huebl,
L. H. Willems van Beveren,
L. C. L. Hollenberg,
D. N. Jamieson,
A. S. Dzurak,
R. G. Clark
Abstract:
We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of the donor electron directly into the SET island during the read-out phase. Simulations show that the charge transfer signals are typically Δq > 0.2 e - over an…
▽ More
We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of the donor electron directly into the SET island during the read-out phase. Simulations show that the charge transfer signals are typically Δq > 0.2 e - over an order of magnitude larger than achievable with metallic SETs on the SiO2 surface. A complete spin-based qubit structure is obtained by adding a local Electron Spin Resonance line for coherent spin control. This architecture is ideally suited to demonstrate and study the coherent properties of donor electron spins, but can be expanded and integrated with classical control electronics in the context of scale-up.
△ Less
Submitted 10 September, 2009; v1 submitted 8 April, 2009;
originally announced April 2009.
-
Electrostically defined few-electron double quantum dot in silicon
Authors:
W. H. Lim,
H. Huebl,
L. H. Willems van Beveren,
S. Rubanov,
P. G. Spizzirri,
S. J. Angus,
R. G. Clark,
A. S. Dzurak
Abstract:
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tu…
▽ More
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements.
△ Less
Submitted 2 April, 2009;
originally announced April 2009.
-
Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
Authors:
L. H. Willems van Beveren,
H. Huebl,
D. R. McCamey,
T. Duty,
A. J. Ferguson,
R. G. Clark,
M. S. Brandt
Abstract:
We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-s…
▽ More
We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the fingerprint of spin-spin scattering in the two-dimensional electron gas.
△ Less
Submitted 27 May, 2008;
originally announced May 2008.
-
Experimental signature of phonon-mediated spin relaxation
Authors:
T. Meunier,
I. T. Vink,
L. H. Willems van Beveren,
K-J. Tielrooij,
R. Hanson,
F. H. L. Koppens,
H. P. Tranitz,
W. Wegscheider,
L. P. Kouwenhoven,
L. M. K. Vandersypen
Abstract:
We observe an experimental signature of the role of the phonons in spin relaxation between triplet and singlet states in a two-electron quantum dot. Using both the external magnetic field and the electrostatic confinement potential, we change the singlet-triplet energy splitting from 1.3 meV to zero and observe that the spin relaxation time depends non-monotonously on the energy splitting. A sim…
▽ More
We observe an experimental signature of the role of the phonons in spin relaxation between triplet and singlet states in a two-electron quantum dot. Using both the external magnetic field and the electrostatic confinement potential, we change the singlet-triplet energy splitting from 1.3 meV to zero and observe that the spin relaxation time depends non-monotonously on the energy splitting. A simple theoretical model is derived to capture the underlying physical mechanism. The present experiment confirms that spin-flip energy is dissipated in the phonon bath.
△ Less
Submitted 28 September, 2006;
originally announced September 2006.
-
Using a quantum dot as a high-frequency shot noise detector
Authors:
E. Onac,
F. Balestro,
L. H. Willems van Beveren,
U. Hartmann,
Y. V. Nazarov,
L. P. Kouwenhoven
Abstract:
We present the experimental realization of a Quantum Dot (QD) operating as a high-frequency noise detector. Current fluctuations produced in a nearby Quantum Point Contact (QPC) ionize the QD and induce transport through excited states. The resulting transient current through the QD represents our detector signal. We investigate its dependence on the QPC transmission and voltage bias. We observe…
▽ More
We present the experimental realization of a Quantum Dot (QD) operating as a high-frequency noise detector. Current fluctuations produced in a nearby Quantum Point Contact (QPC) ionize the QD and induce transport through excited states. The resulting transient current through the QD represents our detector signal. We investigate its dependence on the QPC transmission and voltage bias. We observe and explain a quantum threshold feature and a saturation in the detector signal. This experimental and theoretical study is relevant in understanding the backaction of a QPC used as a charge detector.
△ Less
Submitted 26 April, 2006;
originally announced April 2006.
-
Non-destructive measurement of electron spins in a quantum dot
Authors:
T. Meunier,
I. T. Vink,
L. H. Willems van Beveren,
F. H. L. Koppens,
H. P. Tranitz,
W. Wegscheider,
L. P. Kouwenhoven,
L. M. K. Vandersypen
Abstract:
We propose and implement a non-destructive measurement that distinguishes between two-electron spin states in a quantum dot. In contrast to earlier experiments with quantum dots, the spins are left behind in the state corresponding to the measurement outcome. By measuring the spin states twice within a time shorter than the relaxation time, T1, correlations between consecutive measurements are o…
▽ More
We propose and implement a non-destructive measurement that distinguishes between two-electron spin states in a quantum dot. In contrast to earlier experiments with quantum dots, the spins are left behind in the state corresponding to the measurement outcome. By measuring the spin states twice within a time shorter than the relaxation time, T1, correlations between consecutive measurements are observed. They disappear as the wait time between measurements become comparable to T1. The correlation between the post-measurement state and the measurement outcome is measured to be ~90% on average.
△ Less
Submitted 29 March, 2006;
originally announced March 2006.
-
Control and Detection of Singlet-Triplet Mixing in a Random Nuclear Field
Authors:
F. H. L. Koppens,
J. A. Folk,
J. M. Elzerman,
R. Hanson,
L. H. Willems van Beveren,
I. T. Vink,
H. P. Tranitz,
W. Wegscheider,
L. P. Kouwenhoven,
L. M. K. Vandersypen
Abstract:
We observe mixing between two-electron singlet and triplet states in a double quantum dot, caused by interactions with nuclear spins in the host semiconductor. This mixing is suppressed by applying a small magnetic field, or by increasing the interdot tunnel coupling and thereby the singlet-triplet splitting. Electron transport involving transitions between triplets and singlets in turn polarize…
▽ More
We observe mixing between two-electron singlet and triplet states in a double quantum dot, caused by interactions with nuclear spins in the host semiconductor. This mixing is suppressed by applying a small magnetic field, or by increasing the interdot tunnel coupling and thereby the singlet-triplet splitting. Electron transport involving transitions between triplets and singlets in turn polarizes the nuclei, resulting in striking bistabilities. We extract from the fluctuating nuclear field a limitation on the time-averaged spin coherence time T2* of 25 ns. Control of the electron-nuclear interaction will therefore be crucial for the coherent manipulation of individual electron spins.
△ Less
Submitted 2 September, 2005;
originally announced September 2005.
-
Spin filling of a quantum dot derived from excited-state spectroscopy
Authors:
L. H. Willems van Beveren,
R. Hanson,
I. T. Vink,
F. H. L. Koppens,
L. P. Kouwenhoven,
L. M. K. Vandersypen
Abstract:
We study the spin filling of a semiconductor quantum dot using excited-state spectroscopy in a strong magnetic field. The field is oriented in the plane of the two-dimensional electron gas in which the dot is electrostatically defined. By combining the observation of Zeeman splitting with our knowledge of the absolute number of electrons, we are able to determine the ground state spin configurat…
▽ More
We study the spin filling of a semiconductor quantum dot using excited-state spectroscopy in a strong magnetic field. The field is oriented in the plane of the two-dimensional electron gas in which the dot is electrostatically defined. By combining the observation of Zeeman splitting with our knowledge of the absolute number of electrons, we are able to determine the ground state spin configuration for one to five electrons occupying the dot. For four electrons, we find a ground state spin configuration with total spin S=1, in agreement with Hund's first rule. The electron g-factor is observed to be independent of magnetic field and electron number.
△ Less
Submitted 19 May, 2005;
originally announced May 2005.
-
Single-shot readout of electron spin states in a quantum dot using spin-dependent tunnel rates
Authors:
R. Hanson,
L. H. Willems van Beveren,
I. T. Vink,
J. M. Elzerman,
W. J. M. Naber,
F. H. L. Koppens,
L. P. Kouwenhoven,
L. M. K. Vandersypen
Abstract:
We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are first correlated to different charge states using a spin dependence of the tunnel rates. A subsequent fast measurement of the charge on the dot then reveals the…
▽ More
We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are first correlated to different charge states using a spin dependence of the tunnel rates. A subsequent fast measurement of the charge on the dot then reveals the original spin state. We experimentally demonstrate the method by performing read-out of the two-electron spin states, achieving a single-shot visibility of more than 80%. We find very long triplet-to-singlet relaxation times (up to several milliseconds), with a strong dependence on in-plane magnetic field.
△ Less
Submitted 18 May, 2005; v1 submitted 31 December, 2004;
originally announced December 2004.
-
Single-shot read-out of an individual electron spin in a quantum dot
Authors:
J. M. Elzerman,
R. Hanson,
L. H. Willems van Beveren,
B. Witkamp,
L. M. K. Vandersypen,
L. P. Kouwenhoven
Abstract:
Spin is a fundamental property of all elementary particles. Classically it can be viewed as a tiny magnetic moment, but a measurement of an electron spin along the direction of an external magnetic field can have only two outcomes: parallel or anti-parallel to the field. This discreteness reflects the quantum mechanical nature of spin. Ensembles of many spins have found diverse applications rang…
▽ More
Spin is a fundamental property of all elementary particles. Classically it can be viewed as a tiny magnetic moment, but a measurement of an electron spin along the direction of an external magnetic field can have only two outcomes: parallel or anti-parallel to the field. This discreteness reflects the quantum mechanical nature of spin. Ensembles of many spins have found diverse applications ranging from magnetic resonance imaging to magneto-electronic devices, while individual spins are considered as carriers for quantum information. Read-out of single spin states has been achieved using optical techniques, and is within reach of magnetic resonance force microscopy. However, electrical read-out of single spins has so far remained elusive. Here, we demonstrate electrical single-shot measurement of the state of an individual electron spin in a semiconductor quantum dot. We use spin-to-charge conversion of a single electron confined in the dot, and detect the single-electron charge using a quantum point contact; the spin measurement visibility is ~65%. Furthermore, we observe very long single-spin energy relaxation times (up to 0.85 ms at a magnetic field of 8 Tesla), which are encouraging for the use of electron spins as carriers of quantum information.
△ Less
Submitted 19 November, 2004; v1 submitted 9 November, 2004;
originally announced November 2004.
-
Determination of the tunnel rates through a few-electron quantum dot
Authors:
R. Hanson,
I. T. Vink,
D. P. DiVincenzo,
L. M. K. Vandersypen,
J. M. Elzerman,
L. H. Willems van Beveren,
L. P. Kouwenhoven
Abstract:
We demonstrate how rate equations can be employed to find analytical expressions for the sequential tunneling current through a quantum dot as a function of the tunnel rates, for an arbitrary number of states involved. We apply this method at the one-to-two electron transition where the electron states are known exactly. By comparing the obtained expressions to experimental data, the tunnel rate…
▽ More
We demonstrate how rate equations can be employed to find analytical expressions for the sequential tunneling current through a quantum dot as a function of the tunnel rates, for an arbitrary number of states involved. We apply this method at the one-to-two electron transition where the electron states are known exactly. By comparing the obtained expressions to experimental data, the tunnel rates for six transitions are extracted. We find that these rates depend strongly on the spin and orbital states involved in the tunnel process.
△ Less
Submitted 30 July, 2004;
originally announced July 2004.
-
Real-time detection of single electron tunneling using a quantum point contact
Authors:
L. M. K. Vandersypen,
J. M. Elzerman,
R. N. Schouten,
L. H. Willems van Beveren,
R. Hanson,
L. P. Kouwenhoven
Abstract:
We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter. The QPC is capacitively coupled to the dot, and the QPC conductance changes by about 1% if the number of electrons on the dot changes by one. The QPC is voltage biased and the current is monitored with an IV-convertor at room temperature. W…
▽ More
We observe individual tunnel events of a single electron between a quantum dot and a reservoir, using a nearby quantum point contact (QPC) as a charge meter. The QPC is capacitively coupled to the dot, and the QPC conductance changes by about 1% if the number of electrons on the dot changes by one. The QPC is voltage biased and the current is monitored with an IV-convertor at room temperature. We can resolve tunnel events separated by only 8 $μ$s, limited by noise from the IV-convertor. Shot noise in the QPC sets a 25 ns lower bound on the accessible timescales.
△ Less
Submitted 6 July, 2004;
originally announced July 2004.
-
Excited-state spectroscopy on a nearly-closed quantum dot via charge detection
Authors:
J. M. Elzerman,
R. Hanson,
L. H. Willems van Beveren,
L. M. K. Vandersypen,
L. P. Kouwenhoven
Abstract:
We demonstrate a novel method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a reservoir. The effective tunnel rate depends on the number and nature of the energy levels in the dot made accessible by the pulse. Measurement of the charge…
▽ More
We demonstrate a novel method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a reservoir. The effective tunnel rate depends on the number and nature of the energy levels in the dot made accessible by the pulse. Measurement of the charge dynamics thus reveals the energy spectrum of the dot, as demonstrated for a dot in the few-electron regime.
△ Less
Submitted 9 December, 2003;
originally announced December 2003.
-
Semiconductor few-electron quantum dot operated as a bipolar spin filter
Authors:
R. Hanson,
L. M. K. Vandersypen,
L. H. Willems van Beveren,
J. M. Elzerman,
I. T. Vink,
L. P. Kouwenhoven
Abstract:
We study the spin states of a few-electron quantum dot defined in a two-dimensional electron gas, by applying a large in-plane magnetic field. We observe the Zeeman splitting of the two-electron spin triplet states. Also, the one-electron Zeeman splitting is clearly resolved at both the zero-to-one and the one-to-two electron transition. Since the spin of the electrons transmitted through the do…
▽ More
We study the spin states of a few-electron quantum dot defined in a two-dimensional electron gas, by applying a large in-plane magnetic field. We observe the Zeeman splitting of the two-electron spin triplet states. Also, the one-electron Zeeman splitting is clearly resolved at both the zero-to-one and the one-to-two electron transition. Since the spin of the electrons transmitted through the dot is opposite at these two transitions, this device can be employed as an electrically tunable, bipolar spin filter. Calculations and measurements show that higher-order tunnel processes and spin-orbit interaction have a negligible effect on the polarization.
△ Less
Submitted 9 December, 2004; v1 submitted 18 November, 2003;
originally announced November 2003.
-
Zeeman energy and spin relaxation in a one-electron quantum dot
Authors:
R. Hanson,
B. Witkamp,
L. M. K. Vandersypen,
L. H. Willems van Beveren,
J. M. Elzerman,
L. P. Kouwenhoven
Abstract:
We have measured the relaxation time, T1, of the spin of a single electron confined in a semiconductor quantum dot (a proposed quantum bit). In a magnetic field, applied parallel to the two-dimensional electron gas in which the quantum dot is defined, Zeeman splitting of the orbital states is directly observed by measurements of electron transport through the dot. By applying short voltage pulse…
▽ More
We have measured the relaxation time, T1, of the spin of a single electron confined in a semiconductor quantum dot (a proposed quantum bit). In a magnetic field, applied parallel to the two-dimensional electron gas in which the quantum dot is defined, Zeeman splitting of the orbital states is directly observed by measurements of electron transport through the dot. By applying short voltage pulses, we can populate the excited spin state with one electron and monitor relaxation of the spin. We find a lower bound on T1 of 50 microseconds at 7.5 T, only limited by our signal-to-noise ratio. A continuous measurement of the charge on the dot has no observable effect on the spin relaxation.
△ Less
Submitted 10 November, 2003; v1 submitted 7 March, 2003;
originally announced March 2003.
-
Few-Electron Quantum Dot Circuit with Integrated Charge Read-Out
Authors:
J. M. Elzerman,
R. Hanson,
J. S. Greidanus,
L. H. Willems van Beveren,
S. De Franceschi,
L. M. K. Vandersypen,
S. Tarucha,
L. P. Kouwenhoven
Abstract:
We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts (QPCs) are placed in the vicinity of the double quantum dot and serve as charge detectors. These enable determination of the number of conduction electrons on each dot. This number can be reduced…
▽ More
We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts (QPCs) are placed in the vicinity of the double quantum dot and serve as charge detectors. These enable determination of the number of conduction electrons on each dot. This number can be reduced to zero while still allowing transport measurements through the double dot. Microwave radiation is used to pump an electron from one dot to the other by absorption of a single photon. The experiments demonstrate that this quantum dot circuit can serve as a good starting point for a scalable spin-qubit system.
△ Less
Submitted 19 December, 2002;
originally announced December 2002.
-
Quantum Computing with Electron Spins in Quantum Dots
Authors:
L. M. K. Vandersypen,
R. Hanson,
L. H. Willems van Beveren,
J. M. Elzerman,
J. S. Greidanus,
S. De Franceschi,
L. P. Kouwenhoven
Abstract:
We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable spin-polarization. Read-out hinges on spin-to-charge conversion via spin-selective tunneling to or from the leads, followed by measurement of the number of elect…
▽ More
We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable spin-polarization. Read-out hinges on spin-to-charge conversion via spin-selective tunneling to or from the leads, followed by measurement of the number of electron charges on the dot via a charge detector. Single-qubit manipulation relies on a microfabricated wire located close to the quantum dot, and two-qubit interactions are controlled via the tunnel barrier connecting the respective quantum dots. Based on these ideas, we have begun a series of experiments in order to demonstrate unitary control and to measure the coherence time of individual electron spins in quantum dots.
△ Less
Submitted 10 July, 2002;
originally announced July 2002.
