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Principles for single-pixel terahertz imaging based on the engineering of illuminating and collecting nonparaxial diffractive optics
Authors:
Sergej Orlov,
Rusnė Ivaškevičiūtė-Povilauskienė,
Karolis Mundrys,
Paulius Kizevičius,
Ernestas Nacius,
Domas Jokubauskis,
Kęstutis Ikamas,
Alvydas Lisauskas,
Linas Minkevičius,
Gintaras Valušis
Abstract:
The art of light engineering unveils a world of possibilities through the meticulous manipulation of photonic properties such as intensity, phase, and polarization. The precise control over these optical properties under various conditions finds application in fields spanning communication, light-matter interactions, laser direct writing, and imaging, enriching our technological landscape. In this…
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The art of light engineering unveils a world of possibilities through the meticulous manipulation of photonic properties such as intensity, phase, and polarization. The precise control over these optical properties under various conditions finds application in fields spanning communication, light-matter interactions, laser direct writing, and imaging, enriching our technological landscape. In this study, we embark on a journey to establish a rational framework for the design and assembly of nonparaxial THz imaging systems. Our focus centers on a lensless photonic system composed solely of flat-silicon diffractive optics. These elements include the high-resistivity silicon-based nonparaxial Fresnel zone plate, the Fibonacci lens, the Bessel axicon, and the Airy zone plate, all meticulously crafted using laser ablation technology. A systematic exploration of these flat elements in various combinations sheds light on their strengths and weaknesses. Our endeavor extends to the practical application of these optical components, where they illuminate samples and capture the light scattered from these raster-scanned samples using single-pixel detectors. Through a comprehensive examination, we evaluate imaging systems across diverse metrics that include contrast, resolution, depth of field and focus. This multifaceted approach allows us to distill rational design principles for the optimal assembly of THz imaging setups. The findings of this research chart an exciting course toward the development of compact, user-friendly THz imaging systems where sensors and passive optical elements seamlessly integrate into a single chip. These innovations not only enhance capabilities in THz imaging but also pave the way for novel applications, ushering in a new encouraging era of advanced THz photonic technology.
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Submitted 17 November, 2023;
originally announced November 2023.
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Coloured Digital Terahertz Holography Within 1.39-4.25 THz range
Authors:
Rusne Ivaskeviciute-Povilauskiene,
Linas Minkevicius,
Ignas Grigelionis,
Agnieszka Siemion,
Domas Jokubauskis,
Kestutis Ikamas,
Alvydas Lisauskas,
Gintaras Valusis
Abstract:
Terahertz coloured digital holography ranging from 1.39 THz up to 4.25 THz is demonstrated. It is shown that it can be applied for the investigation of low-absorbing objects, and it is illustrated via inspection of stacked graphene layers placed on high-resistivity silicon substrate. Holograms are recorded using an optically-pumped molecular THz laser operating at discrete emission lines of 1.39 T…
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Terahertz coloured digital holography ranging from 1.39 THz up to 4.25 THz is demonstrated. It is shown that it can be applied for the investigation of low-absorbing objects, and it is illustrated via inspection of stacked graphene layers placed on high-resistivity silicon substrate. Holograms are recorded using an optically-pumped molecular THz laser operating at discrete emission lines of 1.39 THz, 2.52 THz, 3.11 THz, and 4.25 THz frequencies and it unveiled that phase-shifting methods allow to qualitatively reconstruct coloured THz holograms with improved quality achieved by removing unwanted information related with so-called DC term and conjugated beam forming virtual image.
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Submitted 7 November, 2023;
originally announced November 2023.
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Advantages of optical modulation in terahertz imaging for study of graphene layers
Authors:
Rusnė Ivaškevičiūtė-Povilauskienė,
Alesia Paddubskaya,
Dalius Seliuta,
Domas Jokubauskis,
Linas Minkevičius,
Andrzej Urbanowicz,
Ieva Matulaitienė,
Lina Mikoliūnaitė,
Polina Kuzhir,
Gintaras Valušis
Abstract:
It was demonstrated that optical modulation together with simultaneous terahertz (THz) imaging application enables an increase in contrast by an order of magnitude illustrating hence the technique as convenient contactless tool for characterization of graphene deposited on high-resistivity silicon substrates. It was shown that the single- and double-layer graphene can be discriminated and characte…
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It was demonstrated that optical modulation together with simultaneous terahertz (THz) imaging application enables an increase in contrast by an order of magnitude illustrating hence the technique as convenient contactless tool for characterization of graphene deposited on high-resistivity silicon substrates. It was shown that the single- and double-layer graphene can be discriminated and characterized via variation of THz image contrast using a discrete frequency in a continuous wave mode. Modulation depth of 45 % has been reached, the contrast variation from 0.16 up to 0.23 is exposed under laser illumination for the single and double layer graphene, respectively. The technique was applied in the development and investigation of graphene-based optical diffractive elements for THz imaging systems.
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Submitted 16 March, 2023; v1 submitted 15 September, 2022;
originally announced September 2022.
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Observation of the Dissipative Parametric Gain in a GaAs/AlGaAs Superlattice
Authors:
Vladislovas Čižas,
Liudvikas Subačius,
Natalia V. Alexeeva,
Dalius Seliuta,
Timo Hyart,
Klaus Köhler,
Kirill N. Alekseev,
Gintaras Valušis
Abstract:
Parametric generation of oscillations and waves is a paradigm, which is known to be realized in various physical systems. Unique properties of quantum superlattices allow to investigate high-frequency phenomena induced by the Bragg reflections and negative differential velocity of the miniband electrons. Effects of parametric gain in the superlattices at different strengths of dissipation have bee…
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Parametric generation of oscillations and waves is a paradigm, which is known to be realized in various physical systems. Unique properties of quantum superlattices allow to investigate high-frequency phenomena induced by the Bragg reflections and negative differential velocity of the miniband electrons. Effects of parametric gain in the superlattices at different strengths of dissipation have been earlier discussed in a number of theoretical works, but their experimental demonstrations are so far absent. Here, we report on the first observation of the dissipative parametric generation in a subcritically doped GaAs/AlGaAs superlattice subjected to a dc bias and a microwave pump. We argue that the dissipative parametric mechanism originates from a periodic variation of the negative differential velocity. It enforces excitation of slow electrostatic waves in the superlattice which provide a significant enhancement of the gain coefficient. This work paves the way for a development of a miniature solid-state parametric generator of GHz\nobreakdash--THz frequencies operating at room temperature.
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Submitted 8 April, 2022; v1 submitted 15 November, 2021;
originally announced November 2021.
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Fibonacci terahertz imaging by silicon diffractive optics
Authors:
Domas Jokubauskis,
Linas Minkevičius,
Mindaugas Karaliūnas,
Simonas Indrišiūnas,
Irmantas Kašalynas,
Gediminas Račiukaitis,
Gintaras Valušis
Abstract:
Fibonacci or bifocal terahertz (THz) imaging is demonstrated experimentally employing silicon diffractive zone plate (SDZP) in a continuous wave mode. Images simultaneously recorded in two different planes are exhibited at 0.6 THz frequency with the spatial resolution of wavelength. Multi-focus imaging operation of the Fibonacci lens is compared with a performance of the conventional silicon phase…
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Fibonacci or bifocal terahertz (THz) imaging is demonstrated experimentally employing silicon diffractive zone plate (SDZP) in a continuous wave mode. Images simultaneously recorded in two different planes are exhibited at 0.6 THz frequency with the spatial resolution of wavelength. Multi-focus imaging operation of the Fibonacci lens is compared with a performance of the conventional silicon phase zone plate. Spatial profiles and focal depth features are discussed varying the frequency from 0.3 THz to 0.6 THz. Good agreement between experimental results and simulation data is revealed.
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Submitted 7 October, 2020;
originally announced October 2020.
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Laser structuring for control of coupling between THz light and phonon modes
Authors:
X. W. Wang,
G. Seniutinas,
A. Balcytis,
I. Kasalynas,
V. Jakstas,
V. Janonis,
R. Venckevicius,
R. Buividas,
D. Appadoo,
G. Valusis,
S. Juodkazis
Abstract:
Modification of surface and volume of sapphire is shown to affect reflected and transmitted light at THz spectral range. Structural modifications were made using ultra-short 230 fs laser pulses at 1030 nm and 257.5 nm wavelengths forming surface ripples of ~250 nm and 60 nm period, respectively. Softening of the transverse optical phonon TO1 mode due to disorder was the most pronounced in reflecti…
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Modification of surface and volume of sapphire is shown to affect reflected and transmitted light at THz spectral range. Structural modifications were made using ultra-short 230 fs laser pulses at 1030 nm and 257.5 nm wavelengths forming surface ripples of ~250 nm and 60 nm period, respectively. Softening of the transverse optical phonon TO1 mode due to disorder was the most pronounced in reflection from laser ablated surface. It is shown that sub-surface periodic patterns of laser damage sites have also modified reflection spectrum due to coupling of THz radiation with phonons. Application potential of laser structuring and disordering for phononic engineering is discussed.
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Submitted 14 May, 2016;
originally announced May 2016.
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Influence of field effects on the performance of InGaAs-based terahertz radiation detectors
Authors:
Linas Minkevičius,
Vincas Tamošiūnas,
Martynas Kojelis,
Ernestas Žąsinas,
Virginijus Bukauskas,
Arūnas Šetkus,
Renata Butkutė,
Irmantas Kašalynas,
Gintaras Valušis
Abstract:
A detailed electrical characterization of high-performance bow-tie InGaAs based terahertz detectors is presented along with simulation results. The local surface potential and tunnelling current were scanned over the surfaces of the detectors by means of Kelvin probe force microscopy (KPFM) and scanning tunnelling microscopy (STM), which also enabled the determination of the Fermi level. Currentvo…
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A detailed electrical characterization of high-performance bow-tie InGaAs based terahertz detectors is presented along with simulation results. The local surface potential and tunnelling current were scanned over the surfaces of the detectors by means of Kelvin probe force microscopy (KPFM) and scanning tunnelling microscopy (STM), which also enabled the determination of the Fermi level. Currentvoltage curves were measured and modelled using the Synopsys Sentaurus TCAD package to gain deeper insight into the processes involved in detector operation. In addition, we performed finite difference time-domain (FDTD) simulations to reveal features related to changes in the electric field due to the metal detector contacts. The investigation revealed that field effect-induced conductivity modulation is a possible mechanism contributing to the high sensitivity of the studied detectors.
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Submitted 28 March, 2017; v1 submitted 3 May, 2016;
originally announced May 2016.
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Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Authors:
W. Knap,
M. Dyakonov,
D. Coquillat,
F. Teppe,
N. Dyakonova,
J. Łusakowski,
K. Karpierz,
M. Sakowicz,
G. Valusis,
D. Seliuta,
I. Kasalynas,
A. El Fatimy,
Y. Meziani,
T. Otsuji
Abstract:
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves res…
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Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.
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Submitted 15 July, 2009;
originally announced July 2009.
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Radiative Recombination Spectra of Heavily p-Type delta-Doped Gaas/Alas MQWs
Authors:
J. Kundrotas,
A. Cerskus,
G. Valusis,
M. Lachab,
S. P. Khanna,
P. Harrison,
E. H. Linfield
Abstract:
We present a study of the photoluminescence (PL) properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors PL emissions occurring below and above the Mott metal-insulator transit…
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We present a study of the photoluminescence (PL) properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors PL emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the MQW samples exhibiting 15 nm wells width and 5 nm-thick barrier layers is about 3 10E12 cm-2.
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Submitted 4 November, 2007;
originally announced November 2007.
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Electric field gradient induced effects in GaAs/AlGaAs modulation-doped structures and high frequency sensing
Authors:
D. Seliuta,
A. Juozapavicius,
V. Gruzinskis,
S. Balakauskas,
S. Asmontas,
G. Valusis,
W. -H. Chow,
P. Steenson,
P. Harrison,
A. Lisauskas,
H. G. Roskos,
K. Koehler
Abstract:
Electric field gradient effects induced by an asymmetrically in-plane shaped GaAs/AlGaAs modulation-doped structures of various design are investigated within 4-300 K temperature range. It is demonstrated that current-voltage characteristics of such structures at low, 4-80 K, temperatures exhibit well-pronounced asymmetry arising due to a presence of two different gradients of the electric field…
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Electric field gradient effects induced by an asymmetrically in-plane shaped GaAs/AlGaAs modulation-doped structures of various design are investigated within 4-300 K temperature range. It is demonstrated that current-voltage characteristics of such structures at low, 4-80 K, temperatures exhibit well-pronounced asymmetry arising due to a presence of two different gradients of the electric field in a two dimensional electron gas. This phenomenon is caused by both, different accumulation of two-dimensional electrons due to asymmetrical shape of the structure and nonlocality in the electron drift velocity. Experiments are illustrated by a phenomenological model and Monte Carlo simulation. Possible applications of the effect to detect electromagnetic radiation of GHz and THz frequencies are discussed as well.
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Submitted 21 April, 2008; v1 submitted 3 November, 2007;
originally announced November 2007.
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Terahertz sensing by beryllium and silicon delta-doped GaAs/AlAs quantum wells
Authors:
D. Seliuta,
J. Kavaliauskas,
B. Cechavicius,
S. Balakauskas,
G. Valusis,
B. Sherliker,
M. P. Halsall,
P. Harrison,
M. Lachab,
S. P. Khanna,
E. H. Linfield
Abstract:
Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{4.2 THz in silicon- and up to 1 V/W within 4.2-7.3 THz range in beryllium-doped MQWs at liquid helium temperatures is shown. The built-in electric fields as estimated from the observed Franz-Keldysh oscillations in pho…
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Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{4.2 THz in silicon- and up to 1 V/W within 4.2-7.3 THz range in beryllium-doped MQWs at liquid helium temperatures is shown. The built-in electric fields as estimated from the observed Franz-Keldysh oscillations in photoreflectance spectra were found to be located close to the cap and buffer layers of MQWs and vary from 18 kV/cm up to 49 kV/cm depending on the structure design.
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Submitted 3 November, 2007;
originally announced November 2007.
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Terahertz detection with delta-doped GaAs/AlAs multiple quantum wells
Authors:
D. Seliuta,
B. Cechavicius,
J. Kavaliauskas,
G. Krivaite,
I. Grigelionis,
S. Balakauskas,
G. Valusis,
B. Sherliker,
M. P. Halsall,
M. Lachab,
S. P. Khanna,
P. Harrison,
E. H. Linfield
Abstract:
The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electro-reflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found…
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The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electro-reflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.
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Submitted 3 November, 2007;
originally announced November 2007.
