-
Controlled Interlayer Exciton Ionization in an Electrostatic Trap in Atomically Thin Heterostructures
Authors:
Andrew Y. Joe,
Andrés M. Mier Valdivia,
Luis A. Jauregui,
Kateryna Pistunova,
Dapeng Ding,
You Zhou,
Giovanni Scuri,
Kristiaan De Greve,
Andrey Sushko,
Bumho Kim,
Takashi Taniguchi,
Kenji Watanabe,
James C. Hone,
Mikhail D. Lukin,
Hongkun Park,
Philip Kim
Abstract:
Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrost…
▽ More
Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrostatic gates to trap IEs and control their density. By electrically modulating the IE Stark shift, electron-hole pair concentrations above $2\times10^{12}$ cm$^{-2}$ can be achieved. At this high IE density, we observe an exponentially increasing linewidth broadening indicative of an IE ionization transition, independent of the trap depth. This runaway threshold remains constant at low temperatures, but increases above 20 K, consistent with the quantum dissociation of a degenerate IE gas. Our demonstration of the IE ionization in a tunable electrostatic trap represents an important step towards the realization of dipolar exciton condensates in solid-state optoelectronic devices.
△ Less
Submitted 11 June, 2024; v1 submitted 21 November, 2023;
originally announced November 2023.
-
Non-Abelian topological defects and strain map** in 2D moiré materials
Authors:
Rebecca Engelke,
Hyobin Yoo,
Stephen Carr,
Kevin Xu,
Paul Cazeaux,
Richard Allen,
Andres Mier Valdivia,
Mitchell Luskin,
Efthimios Kaxiras,
Minhyong Kim,
Jung Hoon Han,
Philip Kim
Abstract:
We present a general method to analyze the topological nature of the domain boundary connectivity that appeared in relaxed moiré superlattice patterns at the interface of 2-dimensional (2D) van der Waals (vdW) materials. At large enough moiré lengths, all moiré systems relax into commensurated 2D domains separated by networks of dislocation lines. The nodes of the 2D dislocation line network can b…
▽ More
We present a general method to analyze the topological nature of the domain boundary connectivity that appeared in relaxed moiré superlattice patterns at the interface of 2-dimensional (2D) van der Waals (vdW) materials. At large enough moiré lengths, all moiré systems relax into commensurated 2D domains separated by networks of dislocation lines. The nodes of the 2D dislocation line network can be considered as vortex-like topological defects. We find that a simple analogy to common topological systems with an $S^1$ order parameter, such as a superconductor or planar ferromagnet, cannot correctly capture the topological nature of these defects. For example, in twisted bilayer graphene, the order parameter space for the relaxed moiré system is homotopy equivalent to a punctured torus. Here, the nodes of the 2D dislocation network can be characterized as elements of the fundamental group of the punctured torus, the free group on two generators, endowing these network nodes with non-Abelian properties. Extending this analysis to consider moiré patterns generated from any relative strain, we find that antivortices occur in the presence of anisotropic heterostrain, such as shear or anisotropic expansion, while arrays of vortices appear under twist or isotropic expansion between vdW materials. Experimentally, utilizing the dark field imaging capability of transmission electron microscopy (TEM), we demonstrate the existence of vortex and antivortex pair formation in a moiré system, caused by competition between different types of heterostrains in the vdW interfaces. We also present a methodology for map** the underlying heterostrain of a moiré structure from experimental TEM data, which provides a quantitative relation between the various components of heterostrain and vortex-antivortex density in moiré systems.
△ Less
Submitted 16 July, 2022; v1 submitted 11 July, 2022;
originally announced July 2022.
-
Electrically controlled emission from singlet and triplet exciton species in atomically thin light emitting diodes
Authors:
Andrew Y. Joe,
Luis A. Jauregui,
Kateryna Pistunova,
Andrés M. Mier Valdivia,
Zhengguang Lu,
Dominik S. Wild,
Giovanni Scuri,
Kristiaan De Greve,
Ryan J. Gelly,
You Zhou,
Jiho Sung,
Andrey Sushko,
Takashi Taniguchi,
Kenji Watanabe,
Dmitry Smirnov,
Mikhail D. Lukin,
Hongkun Park,
Philip Kim
Abstract:
Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Transition metal dichalcogenides (TMDs), with their large spin-orbit coupling, have been of special interest for valleytronic applications for their coupling of circularly polarized light to…
▽ More
Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Transition metal dichalcogenides (TMDs), with their large spin-orbit coupling, have been of special interest for valleytronic applications for their coupling of circularly polarized light to excitons with selective valley and spin$^{1-4}$. In atomically thin MoSe$_2$/WSe$_2$ TMD van der Waals (vdW) heterostructures, the unique atomic registry of vdW layers provides a quasi-angular momentum to interlayer excitons$^{5,6}$, enabling emission from otherwise dark spin triplet excitons. Here, we report electrically tunable spin singlet and triplet exciton emission from atomically aligned TMD heterostructures. We confirm the spin configurations of the light-emitting excitons employing magnetic fields to measure effective exciton g-factors. The interlayer tunneling current across the TMD vdW heterostructure enables the electrical generation of singlet and triplet exciton emission in this atomically thin PN junction. We demonstrate electrically tunability between the singlet and triplet excitons that are generated by charge injection. Atomically thin TMD heterostructure light emitting diodes thus enables a route for optoelectronic devices that can configure spin and valley quantum states independently by controlling the atomic stacking registry.
△ Less
Submitted 7 December, 2020;
originally announced December 2020.
-
Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe$_2$/MoSe$_2$ bilayers
Authors:
Jiho Sung,
You Zhou,
Giovanni Scuri,
Viktor Zólyomi,
Trond I. Andersen,
Hyobin Yoo,
Dominik S. Wild,
Andrew Y. Joe,
Ryan J. Gelly,
Hoseok Heo,
Damien Bérubé,
Andrés M. Mier Valdivia,
Takashi Taniguchi,
Kenji Watanabe,
Mikhail D. Lukin,
Philip Kim,
Vladimir I. Fal'ko,
Hongkun Park
Abstract:
Structural engineering of van der Waals heterostructures via stacking and twisting has recently been used to create moiré superlattices, enabling the realization of new optical and electronic properties in solid-state systems. In particular, moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) have been shown to lead to exciton trap**, host Mott insulating and supercondu…
▽ More
Structural engineering of van der Waals heterostructures via stacking and twisting has recently been used to create moiré superlattices, enabling the realization of new optical and electronic properties in solid-state systems. In particular, moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) have been shown to lead to exciton trap**, host Mott insulating and superconducting states, and act as unique Hubbard systems whose correlated electronic states can be detected and manipulated optically. Structurally, these twisted heterostructures also feature atomic reconstruction and domain formation. Unfortunately, due to the nanoscale sizes (~10 nm) of typical moiré domains, the effects of atomic reconstruction on the electronic and excitonic properties of these heterostructures could not be investigated systematically and have often been ignored. Here, we use near-0$^o$ twist angle MoSe$_2$/MoSe$_2$ bilayers with large rhombohedral AB/BA domains to directly probe excitonic properties of individual domains with far-field optics. We show that this system features broken mirror/inversion symmetry, with the AB and BA domains supporting interlayer excitons with out-of-plane (z) electric dipole moments in opposite directions. The dipole orientation of ground-state $Γ$-K interlayer excitons (X$_{I,1}$) can be flipped with electric fields, while higher-energy K-K interlayer excitons (X$_{I,2}$) undergo field-asymmetric hybridization with intralayer K-K excitons (X$_0$). Our study reveals the profound impacts of crystal symmetry on TMD excitons and points to new avenues for realizing topologically nontrivial systems, exotic metasurfaces, collective excitonic phases, and quantum emitter arrays via domain-pattern engineering.
△ Less
Submitted 4 January, 2020;
originally announced January 2020.
-
Electrically tunable valley dynamics in twisted WSe$_2$/WSe$_2$ bilayers
Authors:
Giovanni Scuri,
Trond I. Andersen,
You Zhou,
Dominik S. Wild,
Jiho Sung,
Ryan J. Gelly,
Damien Bérubé,
Hoseok Heo,
Linbo Shao,
Andrew Y. Joe,
Andrés M. Mier Valdivia,
Takashi Taniguchi,
Kenji Watanabe,
Marko Lončar,
Philip Kim,
Mikhail D. Lukin,
Hongkun Park
Abstract:
The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of transition metal dichalcogenide bilayers by changing the momentum alignment of the valleys in the two layers. Specifically, we observe that the interlayer excitons in…
▽ More
The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of transition metal dichalcogenide bilayers by changing the momentum alignment of the valleys in the two layers. Specifically, we observe that the interlayer excitons in twisted WSe$_2$/WSe$_2$ bilayers exhibit a high (>60%) degree of circular polarization (DOCP) and long valley lifetimes (>40 ns) at zero electric and magnetic fields. The valley lifetime can be tuned by more than three orders of magnitude via electrostatic do**, enabling switching of the DOCP from ~80% in the n-doped regime to <5% in the p-doped regime. These results open up new avenues for tunable chiral light-matter interactions, enabling novel device schemes that exploit the valley degree of freedom.
△ Less
Submitted 24 December, 2019;
originally announced December 2019.
-
Electrically controlled emission from triplet charged excitons in atomically thin heterostructures
Authors:
Andrew Y. Joe,
Luis A. Jauregui,
Kateryna Pistunova,
Zhengguang Lu,
Dominik S. Wild,
Giovanni Scuri,
Kristiaan De Greve,
Ryan J. Gelly,
You Zhou,
Jiho Sung,
Andrés Mier Valdivia,
Andrey Sushko,
Takashi Taniguchi,
Kenji Watanabe,
Dmitry Smirnov,
Mikhail D. Lukin,
Hongkun Park,
Philip Kim
Abstract:
Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Large spin-orbit coupling in transition metal dichalcogenides (TMDs) couples circularly polarized light to excitons with selective valley and spin. Here, we demonstrate electrically controlle…
▽ More
Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Large spin-orbit coupling in transition metal dichalcogenides (TMDs) couples circularly polarized light to excitons with selective valley and spin. Here, we demonstrate electrically controlled brightening of spin-triplet interlayer excitons in a MoSe$_2$/WSe$_2$ TMD van der Waals (vdW) heterostructure. The atomic registry of vdW layers in TMD heterostructures provides a quasi-angular momentum to interlayer excitons, enabling emission from otherwise dark spin-triplet excitons. Employing magnetic field, we show that photons emitted by triplet and singlet excitons in the same valley have opposite chirality. We also measure effective exciton g-factors, presenting direct and quantitative evidence of triplet interlayer excitons. We further demonstrate gate tuning of the relative photoluminescence intensity between singlet and triplet charged excitons. Electrically controlled emission between singlet and triplet excitons enables a route for optoelectronic devices that can configure excitonic chiral, spin, and valley quantum states.
△ Less
Submitted 16 December, 2019;
originally announced December 2019.
-
Optical detection and manipulation of spontaneous gyrotropic electronic order in a transition-metal dichalcogenide semimetal
Authors:
Su-Yang Xu,
Qiong Ma,
Yang Gao,
Anshul Kogar,
Guo Zong,
Andres M. Mier Valdivia,
Thao H. Dinh,
Shin-Ming Huang,
Bahadur Singh,
Chuang-Han Hsu,
Tay-Rong Chang,
Jacob P. C. Ruff,
Kenji Watanabe,
Takashi Taniguchi,
Tay-Rong Chang,
Hsin Lin,
Goran Karapetrov,
Di Xiao,
Pablo Jarillo-Herrero,
Nuh Gedik
Abstract:
The observation of chirality is ubiquitous in nature. Contrary to intuition, the population of opposite chiralities is surprisingly asymmetric at fundamental levels. Examples range from parity violation in the subatomic weak force to the homochirality in essential biomolecules. The ability to achieve chirality-selective synthesis (chiral induction) is of great importance in stereochemistry, molecu…
▽ More
The observation of chirality is ubiquitous in nature. Contrary to intuition, the population of opposite chiralities is surprisingly asymmetric at fundamental levels. Examples range from parity violation in the subatomic weak force to the homochirality in essential biomolecules. The ability to achieve chirality-selective synthesis (chiral induction) is of great importance in stereochemistry, molecular biology and pharmacology. In condensed matter physics, a crystalline electronic system is geometrically chiral when it lacks any mirror plane, space inversion center or roto-inversion axis. Typically, the geometrical chirality is predefined by a material's chiral lattice structure, which is fixed upon the formation of the crystal. By contrast, a particularly unconventional scenario is the gyrotropic order, where chirality spontaneously emerges across a phase transition as the electron system breaks the relevant symmetries of an originally achiral lattice. Such a gyrotropic order, proposed as the quantum analogue of the cholesteric liquid crystals, has attracted significant interest. However, to date, a clear observation and manipulation of the gyrotropic order remain challenging. We report the realization of optical chiral induction and the observation of a gyrotropically ordered phase in the transition-metal dichalcogenide semimetal $1T$-TiSe$_2$. We show that shining mid-infrared circularly polarized light near the critical temperature leads to the preferential formation of one chiral domain. As a result, we are able to observe an out-of-plane circular photogalvanic current, whose direction depends on the optical induction. Our study provides compelling evidence for the spontaneous emergence of chirality in the correlated semimetal TiSe$_2$. Such chiral induction provides a new way of optical control over novel orders in quantum materials.
△ Less
Submitted 30 October, 2019;
originally announced October 2019.
-
Observation of the nonlinear Hall effect under time reversal symmetric conditions
Authors:
Qiong Ma,
Su-Yang Xu,
Huitao Shen,
David Macneill,
Valla Fatemi,
Andres M. Mier Valdivia,
Sanfeng Wu,
Tay-Rong Chang,
Zongzheng Du,
Chuang-Han Hsu,
Quinn D. Gibson,
Shiang Fang,
Efthimios Kaxiras,
Kenji Watanabe,
Takashi Taniguchi,
Robert J. Cava,
Hai-Zhou Lu,
Hsin Lin,
Liang Fu,
Nuh Gedik,
Pablo Jarillo-Herrero
Abstract:
The electrical Hall effect is the production of a transverse voltage under an out-of-plane magnetic field. Historically, studies of the Hall effect have led to major breakthroughs including the discoveries of Berry curvature and the topological Chern invariants. In magnets, the internal magnetization allows Hall conductivity in the absence of external magnetic field. This anomalous Hall effect (AH…
▽ More
The electrical Hall effect is the production of a transverse voltage under an out-of-plane magnetic field. Historically, studies of the Hall effect have led to major breakthroughs including the discoveries of Berry curvature and the topological Chern invariants. In magnets, the internal magnetization allows Hall conductivity in the absence of external magnetic field. This anomalous Hall effect (AHE) has become an important tool to study quantum magnets. In nonmagnetic materials without external magnetic fields, the electrical Hall effect is rarely explored because of the constraint by time-reversal symmetry. However, strictly speaking, only the Hall effect in the linear response regime, i.e., the Hall voltage linearly proportional to the external electric field, identically vanishes due to time-reversal symmetry. The Hall effect in the nonlinear response regime, on the other hand, may not be subject to such symmetry constraints. Here, we report the observation of the nonlinear Hall effect (NLHE) in the electrical transport of the nonmagnetic 2D quantum material, bilayer WTe2. Specifically, flowing an electrical current in bilayer WTe2 leads to a nonlinear Hall voltage in the absence of magnetic field. The NLHE exhibits unusual properties sharply distinct from the AHE in metals: The NLHE shows a quadratic I-V characteristic; It strongly dominates the nonlinear longitudinal response, leading to a Hall angle of about 90 degree. We further show that the NLHE directly measures the "dipole moment" of the Berry curvature, which arises from layer-polarized Dirac fermions in bilayer WTe2. Our results demonstrate a new Hall effect and provide a powerful methodology to detect Berry curvature in a wide range of nonmagnetic quantum materials in an energy-resolved way.
△ Less
Submitted 24 September, 2018;
originally announced September 2018.
-
Electrically switchable Berry curvature dipole in the monolayer topological insulator WTe2
Authors:
Su-Yang Xu,
Qiong Ma,
Huitao Shen,
Valla Fatemi,
Sanfeng Wu,
Tay-Rong Chang,
Guoqing Chang,
Andres M. Mier Valdivia,
Ching-Kit Chan,
Quinn D. Gibson,
Jiadong Zhou,
Zheng Liu,
Kenji Watanabe,
Takashi Taniguchi,
Hsin Lin,
Robert J. Cava,
Liang Fu,
Nuh Gedik,
Pablo Jarillo-Herrero
Abstract:
Recent experimental evidence for the quantum spin Hall (QSH) state in monolayer WTe$_2$ has bridged two of the most active fields of condensed matter physics, 2D materials and topological physics. This 2D topological crystal also displays unconventional spin-torque and gate-tunable superconductivity. While the realization of QSH has demonstrated the nontrivial topology of the electron wavefunction…
▽ More
Recent experimental evidence for the quantum spin Hall (QSH) state in monolayer WTe$_2$ has bridged two of the most active fields of condensed matter physics, 2D materials and topological physics. This 2D topological crystal also displays unconventional spin-torque and gate-tunable superconductivity. While the realization of QSH has demonstrated the nontrivial topology of the electron wavefunctions of monolayer WTe$_2$, the geometrical properties of the wavefunction, such as the Berry curvature, remain unstudied. On the other hand, it has been increasingly recognized that the Berry curvature plays an important role in multiple areas of condensed matter physics including nonreciprocal electron transport, enantioselective optical responses, chiral polaritons and even unconventional superconductivity. Here we utilize mid-infrared optoelectronic microscopy to investigate the Berry curvature in monolayer WTe$_2$. By optically exciting electrons across the inverted QSH gap, we observe an in-plane circular photogalvanic current even under normal incidence. The application of an out-of-plane displacement field further systematically controls the direction and magnitude of the photocurrent. Our observed photocurrent reveals a novel Berry curvature dipole that arises from the nontrivial wavefunctions near the inverted gap edge. These previously unrealized Berry curvature dipole and strong electric field effect are uniquely enabled by the inverted band structure and tilted crystal lattice of monolayer WTe$_2$. Such an electrically switchable Berry curvature dipole opens the door to the observation of a wide range of quantum geometrical phenomena, such as quantum nonlinear Hall, orbital-Edelstein and chiral polaritonic effects.
△ Less
Submitted 3 July, 2018;
originally announced July 2018.