Towards scalable cryogenic quantum dot biasing using memristor-based DC sources
Authors:
Pierre-Antoine Mouny,
Raphaël Dawant,
Patrick Dufour,
Matthieu Valdenaire,
Serge Ecoffey,
Michel Pioro-Ladrière,
Yann Beillard,
Dominique Drouin
Abstract:
Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the operation of a commercial discrete operational amplifier down to 1.2K which is used on the DC source prototype. Then, the tunability of the memristor-based DC source is…
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Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the operation of a commercial discrete operational amplifier down to 1.2K which is used on the DC source prototype. Then, the tunability of the memristor-based DC source is validated by performing several 250mV-DC sweeps with a resolution of 10mV at room temperature and at 1.2K. Additionally, the DC source prototype exhibits a limited output drift of $\approx1\mathrm{μVs^{-1}}$ at 1.2K. This showcases the potential of memristor-based DC sources for quantum dot biasing. Limitations in power consumption and voltage resolution using discrete components highlight the need for a fully integrated and scalable complementary metal-oxide-semiconductor-based (CMOS-based) approach. To address this, we propose to monolithically co-integrate emerging non-volatile memories (eNVMs) and 65nm CMOS circuitry. Simulations reveal a reduction in power consumption, down to $\mathrm{10μW}$ per DC source and in footprint. This allows for the integration of up to one million eNVM-based DC sources at the 4.2K stage of a dilution fridge, paving the way for near term large-scale quantum computing applications.
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Submitted 16 April, 2024;
originally announced April 2024.
Hardware-aware Training Techniques for Improving Robustness of Ex-Situ Neural Network Transfer onto Passive TiO2 ReRAM Crossbars
Authors:
Philippe Drolet,
Raphaël Dawant,
Victor Yon,
Pierre-Antoine Mouny,
Matthieu Valdenaire,
Javier Arias Zapata,
Pierre Gliech,
Sean U. N. Wood,
Serge Ecoffey,
Fabien Alibart,
Yann Beilliard,
Dominique Drouin
Abstract:
Passive resistive random access memory (ReRAM) crossbar arrays, a promising emerging technology used for analog matrix-vector multiplications, are far superior to their active (1T1R) counterparts in terms of the integration density. However, current transfers of neural network weights into the conductance state of the memory devices in the crossbar architecture are accompanied by significant losse…
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Passive resistive random access memory (ReRAM) crossbar arrays, a promising emerging technology used for analog matrix-vector multiplications, are far superior to their active (1T1R) counterparts in terms of the integration density. However, current transfers of neural network weights into the conductance state of the memory devices in the crossbar architecture are accompanied by significant losses in precision due to hardware variabilities such as sneak path currents, biasing scheme effects and conductance tuning imprecision. In this work, training approaches that adapt techniques such as dropout, the reparametrization trick and regularization to TiO2 crossbar variabilities are proposed in order to generate models that are better adapted to their hardware transfers. The viability of this approach is demonstrated by comparing the outputs and precision of the proposed hardware-aware network with those of a regular fully connected network over a few thousand weight transfers using the half moons dataset in a simulation based on experimental data. For the neural network trained using the proposed hardware-aware method, 79.5% of the test set's data points can be classified with an accuracy of 95% or higher, while only 18.5% of the test set's data points can be classified with this accuracy by the regularly trained neural network.
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Submitted 29 May, 2023;
originally announced May 2023.
