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Thermal properties of NbN single-photon detectors
Authors:
E. M. Baeva,
M. V. Sidorova,
A. A. Korneev,
K. V. Smirnov,
A. V. Divochy,
P. V. Morozov,
P. I. Zolotov,
Yu. B. Vakhtomin,
A. V. Semenov,
T. M. Klapwijk,
V. S. Khrapai,
G. N. Goltsman
Abstract:
We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses we determine the absolute optical power absorbed by the NbN film and, via a resistive superconductor thermometry, the thermal resistance Z(T) of the NbN film in dependence of temperature. In principle, this approach permits a simul…
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We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses we determine the absolute optical power absorbed by the NbN film and, via a resistive superconductor thermometry, the thermal resistance Z(T) of the NbN film in dependence of temperature. In principle, this approach permits a simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous for their similar temperature dependencies. We analyze the Z(T) within the two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.
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Submitted 1 January, 2019; v1 submitted 7 October, 2018;
originally announced October 2018.
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A single photon detection system for visible and infrared spectrum range
Authors:
Alexander Divochiy,
Marta Misiaszek,
Yury Vakhtomin,
Pavel Morozov,
Konstantin Smirnov,
Philipp Zolotov,
Piotr Kolenderski
Abstract:
We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452 nm - 2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of spontaneous parametric down conversion, where one of photon was in the visible range and the other was in the infrared range. We measured a signal to noise ratio as hi…
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We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452 nm - 2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of spontaneous parametric down conversion, where one of photon was in the visible range and the other was in the infrared range. We measured a signal to noise ratio as high as $4\times 10^4$ in our detection setting. A photon detection efficiency as high as 64% at 1550 nm and 15% at 2300 nm was observed.
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Submitted 20 February, 2019; v1 submitted 11 July, 2018;
originally announced July 2018.
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Superconducting single-photon detectors with saturated dependence of quantum efficiency vs. bias current
Authors:
Konstantin Smirnov,
Alexander Divochiy,
Yury Vakhtomin,
Pavel Morozov,
Philipp Zolotov,
Andrey Antipov,
Vitaliy Seleznev
Abstract:
It was investigated the possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency versus normalized bias current. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 related to increasing influence of quantum corrections to conductivity of supercond…
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It was investigated the possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency versus normalized bias current. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 related to increasing influence of quantum corrections to conductivity of superconductors and, in its turn, to decreasing electron diffusion coefficient. The best samples has constant value of system quantum effi-ciency 94% at Ib/Ic~0.8 and wavelength 1.31 mkm.
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Submitted 15 January, 2018; v1 submitted 22 September, 2017;
originally announced September 2017.
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Superconducting detector for visible and near-infrared quantum emitters
Authors:
V. Vorobyov,
A. Kazakov,
V. Soshenko,
A. Korneev,
M. Y. Shalaginov,
S. Bolshedvorskii,
V. N. Sorokin,
A. Divochiy,
Yu. Vakhtomin,
K. V. Smirnov,
B. Voronov,
V. M. Shalaev,
A. Akimov,
G. Goltsman
Abstract:
Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500-1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such…
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Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500-1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial.
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Submitted 17 December, 2016;
originally announced December 2016.
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Superconducting detector of IR single-photons based on thin WSi films
Authors:
V. A. Seleznev,
A. Divochiy,
Yu. B. Vakhtomin,
P. V. Morozov,
P. I. Zolotov,
D. D. Vasilev,
K. M. Moiseev,
E. I. Malevannaya,
K. V. Smirnov
Abstract:
We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7K ) which…
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We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7K ) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors SDE (system detection efficiency) with increasing bias current (Ib) reaches a constant value of ~30% (for 1550 nm) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>=0.6Ic. The minimal dark counts level (DC) made 1 s^-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).
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Submitted 30 June, 2016;
originally announced June 2016.
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Rise times of voltage pulses in NbN superconducting single-photon detectors
Authors:
K. V. Smirnov,
A. V. Divochiy,
Yu. B. Vakhtomin,
M. V. Sidorova,
U. V. Karpova,
P. V. Morozov,
V. A. Seleznev,
A. N. Zotova,
D. Yu. Vodolazov
Abstract:
We have found experimentally that the rise times of voltage pulses in NbN superconducting single photon detectors increase nonlinearly with increasing detector length. We fabricated superconducting single photon detectors based on NbN thin films with a meander-like sensitive region of area from 2x2um2 to 11x11um2. The effect is connected with the dependence of the detector resistance, which appear…
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We have found experimentally that the rise times of voltage pulses in NbN superconducting single photon detectors increase nonlinearly with increasing detector length. We fabricated superconducting single photon detectors based on NbN thin films with a meander-like sensitive region of area from 2x2um2 to 11x11um2. The effect is connected with the dependence of the detector resistance, which appears after photon absorption, on its kinetic inductance and hence on detector length. This conclusion is confirmed by our calculations in the framework of the two-temperature model.
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Submitted 1 July, 2016; v1 submitted 15 June, 2016;
originally announced June 2016.
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Superconducting single-photon detector made of MoSi film
Authors:
Yu. P. Korneeva,
M. Yu. Mikhailov,
Yu. P. Pershin,
N. N. Manova,
A. V. Divochiy,
Yu. B. Vakhtomin,
A. A. Korneev,
K. V. Smirnov,
A G Sivakov,
A. Yu. Devizenko,
G. N. Goltsman
Abstract:
We fabricated and characterised nanowire superconducting single-photon detectors (SSPDs) made of 4 nm thick amorphous Mo$_x$Si$_{1-x}$ films. At 1.7 K the best devices exhibit a detection efficiency up to 18% at 1.2 um wavelength of unpolarised light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The detection efficiency was studied in wavelength range from 650 nm to 25…
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We fabricated and characterised nanowire superconducting single-photon detectors (SSPDs) made of 4 nm thick amorphous Mo$_x$Si$_{1-x}$ films. At 1.7 K the best devices exhibit a detection efficiency up to 18% at 1.2 um wavelength of unpolarised light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The detection efficiency was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum detection efficiency limited by photon absorption in the thin MoSi film.
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Submitted 4 November, 2014; v1 submitted 26 September, 2013;
originally announced September 2013.
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Single photonics at telecom wavelengths using nanowire superconducting detectors
Authors:
C. Zinoni,
B. Alloing,
L. H. Li,
F. Marsili,
L. Lunghi,
A. Gerardino,
Yu. B. Vakhtomin,
K. V. Smirnov,
G. N. Gol'tsman,
A. Fiore
Abstract:
Single photonic applications - such as quantum key distribution - rely on the transmission of single photons, and require the ultimate sensitivity that an optical detector can achieve. Single-photon detectors must convert the energy of an optical pulse containing a single photon into a measurable electrical signal. We report on fiber-coupled superconducting single-photon detectors (SSPDs) with s…
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Single photonic applications - such as quantum key distribution - rely on the transmission of single photons, and require the ultimate sensitivity that an optical detector can achieve. Single-photon detectors must convert the energy of an optical pulse containing a single photon into a measurable electrical signal. We report on fiber-coupled superconducting single-photon detectors (SSPDs) with specifications that exceed those of avalanche photodiodes (APDs), operating at telecommunication wavelength, in sensitivity, temporal resolution and repetition frequency. The improved performance is demonstrated by measuring the intensity correlation function g(2)(t) of single-photon states at 1300nm produced by single semiconductor quantum dots (QDs).
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Submitted 12 October, 2006;
originally announced October 2006.
