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Microscopic piezoelectric behavior of clamped and membrane (001) PMN-30PT thin films
Authors:
A. Brewer,
S. Lindemann,
B. Wang,
W. Maeng,
J. Frederick,
F. Li,
Y. Choi,
P. J. Thompson,
J. W. Kim,
T. Mooney,
V. Vaithyanathan,
D. G. Schlom,
M. S. Rzchowski,
L. Q. Chen,
P. J. Ryan,
C. B. Eom
Abstract:
Bulk single-crystal relaxor-ferroelectrics, like Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), are widely known for their large piezoelectricity. This is attributed to polarization rotation which is facilitated by the presence of various crystal symmetries for compositions near a morphotropic phase boundary (MPB). Relaxor-ferroelectric thin films, which are necessary for low-voltage applications, suffer a red…
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Bulk single-crystal relaxor-ferroelectrics, like Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), are widely known for their large piezoelectricity. This is attributed to polarization rotation which is facilitated by the presence of various crystal symmetries for compositions near a morphotropic phase boundary (MPB). Relaxor-ferroelectric thin films, which are necessary for low-voltage applications, suffer a reduction in their piezoelectric response due to clam** by the passive substrate. To understand the microscopic behavior of this adverse phenomenon, we employ AC electric field driven in-operando synchrotron x-ray diffraction (XRD) on patterned device structures to investigate the piezoelectric domain behavior under an electric field for both a clamped (001) PMN-PT thin film on Si and a (001) PMN-PT membrane released from its substrate. In the clamped film, the substrate inhibits the field induced rhombohedral (R) to tetragonal (T) phase transition resulting in a reversible R to Monoclinic (M) transition with a reduced longitudinal piezoelectric coefficient d33 < 100 pm/V. Releasing the film from the substrate results in recovery of the R to T transition and results in a d33 > 1000 pm/V. Using diffraction with spatial map**, we find that lateral constraints imposed by the boundary between active and inactive material also inhibits the R to T transition. Phase-field calculations on both clamped and released PMN-PT thin films simulate our experimental findings. Resolving the suppression of thin film piezoelectric response is critical to their application in piezo-driven technologies.
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Submitted 16 October, 2021;
originally announced October 2021.
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Magnetoelectric Coupling by Giant Piezoelectric Tensor Design
Authors:
J. Irwin,
S. Lindemann,
W. Maeng,
J. J. Wang,
V. Vaithyanathan,
J. M. Hu,
L. Q. Chen,
D. G. Schlom,
C. B. Eom,
M. S. Rzchowski
Abstract:
Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the virtual elimination of in-plane pie…
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Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the virtual elimination of in-plane piezoelectric strain by substrate clam**, and to the requirement of anisotropic in-plane strain in two-terminal devices. We have overcome both of these limitations by fabricating lithographically patterned devices with a piezoelectric membrane on a soft substrate platform, in which in-plane strain is freely generated, and a patterned edge constraint that transforms the nominally isotropic piezoelectric strain into the required uniaxial strain. We fabricated 500 nm thick, (001) oriented [Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$]$_{0.7}$-[PbTiO$_3$]$_{0.3}$ (PMN-PT) unclamped piezoelectric membranes with ferromagnetic Ni overlayers. Guided by analytical and numerical continuum elastic calculations, we designed and fabricated two-terminal devices exhibiting Ni magnetization rotation in response to an electric field across the PMN-PT. Similar membrane heterostructures could be used to apply designed strain patterns to many other materials systems to control properties such as superconductivity, band topology, conductivity, and optical response.
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Submitted 8 January, 2019;
originally announced January 2019.
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Properties of MgB2 thin films with carbon do**
Authors:
A. V. Pogrebnyakov,
X. X. Xi,
J. M. Redwing,
V. Vaithyanathan,
D. G. Schlom,
A. Soukiassian,
S. B. Mi,
C. L. Jia,
C. B. Eom,
J. Chen,
Y. F. Hu,
Y. Cui,
Q. Li
Abstract:
We have studied structural and superconducting properties of MgB2 thin films doped with carbon during the hybrid physical-chemical vapor deposition process. A carbon-containing metalorganic precursor bis(cyclopentadienyl)magnesium was added to the carrier gas to achieve carbon do**. As the amount of carbon in the films increases, the resistivity increases, Tc decreases, and the upper critical…
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We have studied structural and superconducting properties of MgB2 thin films doped with carbon during the hybrid physical-chemical vapor deposition process. A carbon-containing metalorganic precursor bis(cyclopentadienyl)magnesium was added to the carrier gas to achieve carbon do**. As the amount of carbon in the films increases, the resistivity increases, Tc decreases, and the upper critical field increases dramatically as compared to the clean films. The self-field Jc in the carbon-doped films is lower than that in the clean films, but Jc remains relatively high to much higher magnetic fields, indicating stronger pinning. Structurally, the doped films are textured with nano-grains and highly resistive amorphous areas at the grain boundaries. The carbon do** approach can be used to produce MgB2 materials for high magnetic field applications.
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Submitted 6 July, 2004;
originally announced July 2004.
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Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition
Authors:
A. V. Pogrebnyakov,
J. M. Redwing,
J. E. Jones,
X. X. Xi,
S. Y. Xu,
Q. Li,
V. Vaithyanathan,
D. G. Schlom
Abstract:
We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thi…
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We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thickness, not by the deposition rate. When the film thickness was increased, the transition temperature, Tc, increased and the residual resistivity, rho0, decreased. Above about 300 nm, a Tc of 41.8 K, a rho0 of 0.28 mikroOhm.cm, and a residual resistance ratio RRR of over 30 were obtained. These values represent the best MgB2 properties reported thus far.
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Submitted 7 April, 2003;
originally announced April 2003.
