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1D/2D hybrid Te/Graphene and Te/MoS2: multifaceted broadband photonics and green energy applications
Authors:
Tuhin Kumar Maji,
Kumar Vaibhav,
Anna Delin,
Olle Eriksson,
Debjani Karmakar
Abstract:
In this letter, we highlight the enhanced functionalization of the electronic and optical properties in the hybrid heterojunction of 1D Tellurene with 2D monolayer of Graphene and MoS2 in both lateral and vertical geometries, having potential applications in the field of photonics and energy harvesting. The structural geometries of the lateral and vertical assemblies are optimized with a comparati…
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In this letter, we highlight the enhanced functionalization of the electronic and optical properties in the hybrid heterojunction of 1D Tellurene with 2D monolayer of Graphene and MoS2 in both lateral and vertical geometries, having potential applications in the field of photonics and energy harvesting. The structural geometries of the lateral and vertical assemblies are optimized with a comparative and systematic analysis of the energetics of the different positional placement of the 1D system with respect to the hexagonal 2D layer. The 1D/2D coupling of the electronic structure in this unique assembly enables the realization of the four different types of heterojunctions, viz. type I, type II, Z-scheme and Schottky type, with the band-alignments being entirely dependent upon the stacking geometry of 1D Tellurene with respect to the 2D monolayer. With the static and time-dependent first-principles calculations, we indicate the potential applications of these hybrid systems in broadband photo detection and absorption, covering the full range of Infra-red to visible (IR-Vis) spectrum and in green energy harvesting with an effective separation and migration of photo-generated charge carriers.
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Submitted 31 March, 2022; v1 submitted 17 March, 2022;
originally announced March 2022.
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Broken Inversion Symmetry and Interface-induced Spin-polarization for metal-Weyl semimetal stacked interfaces
Authors:
Tuhin Kumar Maji,
Kumar Vaibhav,
Samir Kumar Pal,
Debjani Karmakar
Abstract:
Weyl semimetal TaAs, a congenial host to the massless Weyl fermions, spontaneously lacks the time-reversal and the inversion symmetry and thus effectuates topologically stable Weyl nodes, resembling magnetic monopoles in momentum space. Former experimental analysis had revealed that the near-zero spin-polarization of bulk TaAs experiences a boost in presence of point-contacts of non-magnetic metal…
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Weyl semimetal TaAs, a congenial host to the massless Weyl fermions, spontaneously lacks the time-reversal and the inversion symmetry and thus effectuates topologically stable Weyl nodes, resembling magnetic monopoles in momentum space. Former experimental analysis had revealed that the near-zero spin-polarization of bulk TaAs experiences a boost in presence of point-contacts of non-magnetic metals along with the associated phenomena of tip-induced superconductivity, providing the impetus to study the large-area stacked interfaces of TaAs with Noble metals like Au and Ag. First-principles calculations on these interfacial systems have manifested an increment of the interface-induced spin-polarization and contact-induced transport spin-polarization. In contrast to the single interface, for stacked system, the broken inversion symmetry of the system introduces a z-directional band-dispersion resulting in an energetically separated series of Weyl cones. The Weyl cones for TaAs/Ag and TaAs/Au stacked interfaces are observed to be of type-I and type-II nature respectively. Thus, the current study demonstrates the designing of two different types of spin-polarized Weyl systems from non-magnetic metal and type I Weyl components.
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Submitted 6 February, 2020;
originally announced February 2020.
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Intriguing electronic and optical prospects of FCC bimetallic two-dimensional heterostructures: epsilon near-zero behaviour in UV-vis range
Authors:
Tuhin Kumar Maji,
Kumar Vaibhav,
Ranjit Hawaldar,
K. V. Adarsh,
Samir Kumar Pal,
Debjani Karmakar
Abstract:
Higher superconducting critical temperature and large-area epsilon-near-zero interfaces are two long-standing goals of Condensed Matter Physics and Optics. Motivated by the recent advancements of experimental interests on metallic nanostructures, we have theoretically investigated some selected bimetallic FCC combinations starting from large-area interface to embedded and doped two-dimensional (2D…
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Higher superconducting critical temperature and large-area epsilon-near-zero interfaces are two long-standing goals of Condensed Matter Physics and Optics. Motivated by the recent advancements of experimental interests on metallic nanostructures, we have theoretically investigated some selected bimetallic FCC combinations starting from large-area interface to embedded and doped two-dimensional (2D) nanostructures. Using different first-principles techniques, encompassing density functional theory (DFT), time-dependent DFT (TDDFT), phonon and DFT-coupled quantum transport, we propose the prospects of some selective bimetallic nanostructures like Au/Ag and Pt/Pd to exhibit exotic electronic phenomena. For 2D doped and embedded nanostructures of these systems, non-trivial band-structure and Fermi-surface topology may be emblematic to the presence of instabilities like charge density waves. We specifically highlight the optical attributes extracted from the TDDFT calculations for these systems, where interfacial morphology induced band-localization leads to near-zero behavior of both real and imaginary parts of the dynamical dielectric response is observed in the ultra-violet to visible (UV-vis) optical range. Low-energy intra-band plasmonic oscillations present for individual metallic surfaces are completely suppressed for embedded and doped nanostructures. Phonon-dispersion of the model systems indicates the presence of soft phonons and dynamical instabilities. Quantum transport calculations on simplest possible device made out of these bimetallic systems reveals generation of highly transmitting pockets over the cross-sectional area for some selected device geometry. We envisage that, if observed experimentally, such systems may lead to many fascinating physics and applications in many diverse fields ranging from condensed matter physics to optics or even more.
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Submitted 10 April, 2020; v1 submitted 26 June, 2019;
originally announced June 2019.
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Intricate modulation of interlayer coupling at GO/MoSe2 interface: application in time-dependent optics and device transport
Authors:
Tuhin Kumar Maji,
Kumar Vaibhav,
Samir Kumar Pal,
Kausik Majumdar,
K. V. Adarsh,
Debjani Karmakar
Abstract:
In GO/MoSe2 semiconductor heterostructure, we have demonstrated a subtle control on the do** dynamics by modulating interlayer coupling through the combination of strain-reducing relative rotation of the constituting layers and variation of ligand type and concentration. By first-principles calculations incorporating spin-orbital coupling, we have investigated the impact of variable interlayer c…
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In GO/MoSe2 semiconductor heterostructure, we have demonstrated a subtle control on the do** dynamics by modulating interlayer coupling through the combination of strain-reducing relative rotation of the constituting layers and variation of ligand type and concentration. By first-principles calculations incorporating spin-orbital coupling, we have investigated the impact of variable interlayer coupling in introducing non-collinear magnetic behaviour in the heterostructure. The outcome of varying carrier type and their respective concentrations are investigated by static as well as time dependent density functional calculations, which indicates presence of optical anisotropy and time-dependent optical phenomena like exciton quenching and band-gap renormalization. Performance of such heterostructures as channel material in devices with top and edge metal contacts is analyzed. Our self-consistent quantum transport calculations have evinced that the nature of interface-induced variation in do** is extrapolated for devices only in the case of top contacts. The edge contact, although exhibits a better transmission, are inefficient for sensing the ligand-induced do** modulation introduced via vertical inter-layer charge transfer.
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Submitted 4 December, 2018;
originally announced December 2018.
