Skip to main content

Showing 1–4 of 4 results for author: Vadde, V

.
  1. arXiv:2407.08469  [pdf, other

    cond-mat.mes-hall

    A Comprehensive Convolutional Neural Network Architecture Design using Magnetic Skyrmion and Domain Wall

    Authors: Saumya Gupta, Venkatesh Vadde, Bhaskaran Muralidharan, Abhishek Sharma

    Abstract: Spintronic-based neuromorphic hardware enables high-density and rapid data processing at nanoscale lengths. leveraged by the topologically protected spin configurations and low current densities to manipulate magnetic structures such as skyrmion and domain wall. The paper presents a compact, energy-efficient multi-bit skyrmionic synapse and domain wall-based ReLU with max-pooling functionalities f… ▽ More

    Submitted 11 July, 2024; originally announced July 2024.

    Comments: 15 pages, 10 figures

  2. arXiv:2403.02863  [pdf, other

    cs.ET eess.IV physics.app-ph

    Domain wall and Magnetic Tunnel Junction Hybrid for on-chip Learning in UNet architecture

    Authors: Venkatesh Vadde, Bhaskaran Muralidharan, Abhishek Sharma

    Abstract: We present spintronic devices based hardware implementation of UNet for segmentation tasks. Our approach involves designing hardware for convolution, deconvolution, rectified activation function (ReLU), and max pooling layers of the UNet architecture. We designed the convolution and deconvolution layers of the network using the synaptic behavior of the domain wall MTJ. We also construct the ReLU a… ▽ More

    Submitted 11 July, 2024; v1 submitted 5 March, 2024; originally announced March 2024.

  3. arXiv:2303.06463  [pdf, other

    cond-mat.mes-hall

    Power efficient ReLU design for neuromorphic computing using spin Hall effect

    Authors: Venkatesh Vadde, Bhaskaran Muralidharan, Abhishek Sharma

    Abstract: We demonstrate a magnetic tunnel junction injected with spin Hall current to exhibit linear rotation of magnetization of the free-ferromagnet using only the spin current. Using the linear resistance change of the MTJ, we devise a circuit for the rectified linear activation (ReLU) function of the artificial neuron. We explore the role of different spin Hall effect (SHE) heavy metal layers on the po… ▽ More

    Submitted 11 March, 2023; originally announced March 2023.

  4. arXiv:2207.14603  [pdf, other

    cond-mat.mes-hall cond-mat.dis-nn

    Orthogonal Spin Current Injected Magnetic Tunnel Junction for Convolutional Neural Networks

    Authors: Venkatesh Vadde, Bhaskaran Muralidharan, Abhishek Sharma

    Abstract: We propose that a spin Hall effect driven magnetic tunnel junction device can be engineered to provide a continuous change in the resistance across it when injected with orthogonal spin currents. Using this concept, we develop a hybrid device-circuit simulation platform to design a network that realizes multiple functionalities of a convolutional neural network. At the atomistic level, we use the… ▽ More

    Submitted 4 February, 2023; v1 submitted 29 July, 2022; originally announced July 2022.

    Comments: 12 pages, 15 figures, Updated version, Comments welcome