Showing 1–50 of 54 results for author: Výborný, K

Anisotropic magnetoresistance in altermagnetic MnTe

Authors: Ruben Dario Gonzalez Betancourt, Jan Zubáč, Kevin Geishendorf, Philipp Ritzinger, Barbora Růžičková, Tommy Kotte, Jakub Železný, Kamil Olejník, Gunther Springholz, Bernd Büchner, Andy Thomas, Karel Výborný, Tomas Jungwirth, Helena Reichlová, Dominik Kriegner

Abstract: Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical res… ▽ More Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order. △ Less

Submitted 25 April, 2024; originally announced April 2024.

Temperature Dependence of Relativistic Valence Band Splitting Induced by an Altermagnetic Phase Transition

Authors: M. Hajlaoui, S. W. D'Souza, L. Šmejkal, D. Kriegner, G. Krizman, T. Zakusylo, N. Olszowska, O. Caha, J. Michalička, A. Marmodoro, K. Výborný, A. Ernst, M. Cinchetti, J. Minar, T. Jungwirth, G. Springholz

Abstract: Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting have been documented within the framework of the non-relativistic spin group symmetry, there has been limited exploration of the inclusion of relativistic symmetry and its impact on the emergence of a nov… ▽ More Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting have been documented within the framework of the non-relativistic spin group symmetry, there has been limited exploration of the inclusion of relativistic symmetry and its impact on the emergence of a novel spin-splitting in the band structure. This study delves into the intricate relativistic electronic structure of an AM material, alpha-MnTe. Employing temperature-dependent angle-resolved photoelectron spectroscopy across the AM phase transition, we elucidate the emergence of a relativistic valence band splitting concurrent with the establishment of magnetic order. This discovery is validated through disordered local moment calculations, modeling the influence of magnetic order on the electronic structure and confirming the magnetic origin of the observed splitting. The temperature-dependent splitting is ascribed to the advent of relativistic spin-splitting resulting from the strengthening of AM order in alpha-MnTe as the temperature decreases. This sheds light on a previously unexplored facet of this intriguing material. △ Less

Submitted 14 June, 2024; v1 submitted 17 January, 2024; originally announced January 2024.

Even-in-magnetic-field part of transverse resistivity as a probe of magnetic order

Authors: Antonin Badura, Dominik Kriegner, Eva Schmoranzerová, Karel Výborný, Miina Leiviskä, Rafael Lopes Seeger, Vincent Baltz, Daniel Scheffler, Sebastian Beckert, Ismaila Kounta, Lisa Michez, Libor Šmejkal, Jairo Sinova, Sebastian T. B. Goennenwein, Jakub Železný, Helena Reichlová

Abstract: The detection of a voltage transverse to both an applied current and a magnetic field is one of the most common characterization techniques in solid-state physics. The corresponding component of the resistivity tensor $ρ_{ij}$ can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effec… ▽ More The detection of a voltage transverse to both an applied current and a magnetic field is one of the most common characterization techniques in solid-state physics. The corresponding component of the resistivity tensor $ρ_{ij}$ can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effect. The latter is typically ascribed to experimental artefacts and ignored. We here show that upon suppressing these artefacts in carefully controlled experiments, useful information remains. We first investigate the well-explored ferromagnet CoFeB, where the even part of $ρ_{yx}$ contains a contribution from the anisotropic magnetoresistance, which we confirm by Stoner-Wohlfarth modelling. We then apply our approach to magnetotransport measurements in $\rm Mn_5Si_3$ thin films with a complex compensated magnetic order. In this material, the even part of the transverse signal is sizable only in the low-spin-symmetry phase below $\approx 80$ K and thus offers a simple and readily available probe of the magnetic order. △ Less

Submitted 24 November, 2023; originally announced November 2023.

Comments: 18 pages, 5 figures

Coexistence of Anomalous Hall Effect and Weak Net Magnetization in Collinear Antiferromagnet MnTe

Authors: K. P. Kluczyk, K. Gas, M. J. Grzybowski, P. Skupiński, M. A. Borysiewicz, T. Fąs, J. Suffczyński, J. Z. Domagala, K. Grasza, A. Mycielski, M. Baj, K. H. Ahn, K. Výborný, M. Sawicki, M. Gryglas-Borysiewicz

Abstract: Anomalous Hall effect (AHE) plays important role in the rapidly develo** field of antiferromagnetic spintronics. It has been recently discussed that it can be a feature of not only uncompensated magnetic systems but also in altermagnetic materials. Hexagonal MnTe belongs to this appealing group of compounds exhibiting AHE and is commonly perceived as magnetically compensated. Here, we demonstrat… ▽ More Anomalous Hall effect (AHE) plays important role in the rapidly develo** field of antiferromagnetic spintronics. It has been recently discussed that it can be a feature of not only uncompensated magnetic systems but also in altermagnetic materials. Hexagonal MnTe belongs to this appealing group of compounds exhibiting AHE and is commonly perceived as magnetically compensated. Here, we demonstrate that bulk form of MnTe exhibits small but detectable magnetic moment correlating with hysteretic behaviour of the AHE. We formulate a phenomenological model which explains how this feature allows to create a disbalance between states with opposite Néel vector and prevent the AHE signal from averaging out to zero. Moreover, we show how the dependence of AHE on the Néel vector arises on microscopical level and highlight the differences in Berry curvature between magnetically compensated and uncompensated systems. △ Less

Submitted 13 October, 2023; originally announced October 2023.

Non-relativistic torque and Edelstein effect in noncollinear magnets

Authors: Rafael González-Hernández, Philipp Ritzinger, Karel Výborný, Jakub Železný, Aurélien Manchon

Abstract: The Edelstein effect is the origin of the spin-orbit torque: a current-induced torque that is used for the electrical control of ferromagnetic and antiferromagnetic materials. This effect originates from the relativistic spin-orbit coupling, which necessitates utilizing materials with heavy elements. Here we show that in magnetic materials with non-collinear magnetic order, the Edelstein effect an… ▽ More The Edelstein effect is the origin of the spin-orbit torque: a current-induced torque that is used for the electrical control of ferromagnetic and antiferromagnetic materials. This effect originates from the relativistic spin-orbit coupling, which necessitates utilizing materials with heavy elements. Here we show that in magnetic materials with non-collinear magnetic order, the Edelstein effect and consequently also a current-induced torque can exist even in the absence of the spin-orbit coupling. Using group symmetry analysis, model calculations, and realistic simulations on selected compounds, we identify large classes of non-collinear magnet candidates and demonstrate that the current-driven torque is of similar magnitude as the celebrated spin-orbit torque in conventional transition metal structures. We also show that this torque can exist in an insulating material, which could allow for highly efficient electrical control of magnetic order. △ Less

Submitted 10 October, 2023; originally announced October 2023.

Comments: 11 pages, 5 figues

X-ray Magnetic Circular Dichroism in Altermagnetic $α$-MnTe

Authors: A. Hariki, A. Dal Din, O. J. Amin, T. Yamaguchi, A. Badura, D. Kriegner, K. W. Edmonds, R. P. Campion, P. Wadley, D. Backes, L. S. I. Veiga, S. S. Dhesi, G. Springholz, L. Šmejkal, K. Výborný, T. Jungwirth, J. Kuneš

Abstract: Altermagnetism is a recently identified magnetic symmetry class combining characteristics of conventional collinear ferromagnets and antiferromagnets, that were regarded as mutually exclusive, and enabling phenomena and functionalities unparalleled in either of the two traditional elementary magnetic classes. In this work we use symmetry and ab initio theory to explore X-ray magnetic circular dich… ▽ More Altermagnetism is a recently identified magnetic symmetry class combining characteristics of conventional collinear ferromagnets and antiferromagnets, that were regarded as mutually exclusive, and enabling phenomena and functionalities unparalleled in either of the two traditional elementary magnetic classes. In this work we use symmetry and ab initio theory to explore X-ray magnetic circular dichroism (XMCD) in the altermagnetic class. Our results highlight the distinct phenomenology in altermagnets of this time-reversal symmetry breaking response, and its potential utility for element-specific spectroscopy and microscopy in altermagnets. As a representative material for our XMCD study we choose $α$-MnTe with the compensated antiparallel magnetic order in which an anomalous Hall effect has been already demonstrated both in theory and experiment. The predicted magnitude of XMCD lies well within the resolution of existing experimental techniques. △ Less

Submitted 1 February, 2024; v1 submitted 5 May, 2023; originally announced May 2023.

Comments: Experimental data added

Journal ref: Phys. Rev. Lett. 132, 176701 (2024)

Anisotropic magnetoresistance: materials, models and applications

Authors: Philipp Ritzinger, Karel Vyborny

Abstract: Resistance of certain (conductive and otherwise isotropic) ferromagnets turns out to exhibit anisotropy with respect to the direction of magnetisation: R$_\parallel$ different from R$_\perp$ with reference to the electric current direction. This century-old phenomenon is reviewed both from the perspective of materials and physical mechanisms involved. More recently, this effect has also been exten… ▽ More Resistance of certain (conductive and otherwise isotropic) ferromagnets turns out to exhibit anisotropy with respect to the direction of magnetisation: R$_\parallel$ different from R$_\perp$ with reference to the electric current direction. This century-old phenomenon is reviewed both from the perspective of materials and physical mechanisms involved. More recently, this effect has also been extended to antiferromagnets. This opens the possibility for industrial applications reaching far beyond the current ones, e.g. hard drive read heads or position sensors. △ Less

Submitted 8 December, 2022; v1 submitted 24 November, 2022; originally announced December 2022.

Comments: 50 pages (excl. references), 16 figures

Anomalous Hall conductivity and quantum friction

Authors: Pavel Středa, Karel Výborný

Abstract: Anomalous Hall effect in very clean samples (high conductivity regime) is studied using a two-dimensional network model. We find that the off-diagonal conductivity comprises two parts: one which reflects the bulk properties as obtained by the Kubo formula and another which is sensitive to boundary conditions imposed on the network. The latter scales with the system width in the ideal case and for… ▽ More Anomalous Hall effect in very clean samples (high conductivity regime) is studied using a two-dimensional network model. We find that the off-diagonal conductivity comprises two parts: one which reflects the bulk properties as obtained by the Kubo formula and another which is sensitive to boundary conditions imposed on the network. The latter scales with the system width in the ideal case and for real-world samples, it will depend on the coherence length. It provides an alternative interpretation of the observed behaviour in the clean limit which is otherwise attributed to the skew scattering. We highlight analogies to friction in viscous fluids responsible for Couette flow. △ Less

Submitted 6 December, 2022; v1 submitted 3 June, 2022; originally announced June 2022.

Comments: to appear in PRB

Sensitivity of the MnTe valence band to orientation of magnetic moments

Authors: Paulo E. Faria Junior, Koen A. de Mare, Klaus Zollner, Sigurdur I. Erlingsson, Mark van Schilfgaarde, Karel Vyborny

Abstract: An effective model of the hexagonal (NiAs-structure) manganese telluride valence band in the vicinity of the A-point of the Brillouin zone is derived. It is shown that while for the usual antiferromagnetic order (magnetic moments in the basal plane) band splitting at A is small, their out-of-plane rotation enhances the splitting dramatically (to about 0.5 eV). We propose extensions of recent exper… ▽ More An effective model of the hexagonal (NiAs-structure) manganese telluride valence band in the vicinity of the A-point of the Brillouin zone is derived. It is shown that while for the usual antiferromagnetic order (magnetic moments in the basal plane) band splitting at A is small, their out-of-plane rotation enhances the splitting dramatically (to about 0.5 eV). We propose extensions of recent experiments (Moseley et al., Phys. Rev. Materials 6, 014404) where such inversion of magnetocrystalline anisotropy has been observed in Li-doped MnTe, to confirm this unusual sensitivity of a semiconductor band structure to magnetic order. △ Less

Submitted 16 February, 2023; v1 submitted 6 April, 2022; originally announced April 2022.

Comments: 5+epsilon pages, 4 figures; to appear in PRB

Single crystal studies and electronic structure investigation of a room-temperature semiconductor NaMnAs

Authors: J. Volny, V. Holy, K. Charvatova, M. Veis, M. Vondracek, J. Honolka, E. Duverger-Nedellec, J. Schusser, S. W. D'Souza, J. Minar, J. M. Pientka, A. Marmodoro, K. Vyborny, K. Uhlirova

Abstract: We report synthesis of single crystalline NaMnAs, confirm its antiferromagnetic order and characterise the sample by photoemission spectroscopy. The electronic structure was studied using optical transmittance, x-ray and ultraviolet spectroscopy and by theoretical modeling using local density approximation (LDA) extended to LDA+U when Heisenberg model parameters were determined. Optical transmitta… ▽ More We report synthesis of single crystalline NaMnAs, confirm its antiferromagnetic order and characterise the sample by photoemission spectroscopy. The electronic structure was studied using optical transmittance, x-ray and ultraviolet spectroscopy and by theoretical modeling using local density approximation (LDA) extended to LDA+U when Heisenberg model parameters were determined. Optical transmittance measurement have confirmed the theoretical predictions that NaMnAs is a semiconductor. Also the Néel temperature was closer determined for the first time from temperature dependence of magnetization, in agreement with our Monte Carlo simulations. △ Less

Submitted 7 September, 2021; originally announced September 2021.

Comments: 11 pages, 11 figures

Journal ref: Phys. Rev. B 105 (2022) 125204

Landau level spectroscopy of PbSnSe topological crystalline insulator

Authors: Kristupas Kazimieras Tikuišis, Jan Wyzula, Lukáš Ohnoutek, Petr Cejpek, Klára Uhlířová, Michael Hakl, Clément Faugeras, Karel Výborný, Akihiro Ishida, Martin Veis, Milan Orlita

Abstract: We report on an infrared magneto-spectroscopy study of Pb$_{1-x}$Sn$_x$Se, a topological crystalline insulator. We have examined a set of samples, all in the inverted regime of electronic bands, with the tin composition varying from $x=0.2$ to $0.33$. Our analysis shows that the observed response, composed of a series of interband inter-Landau level excitations, can be interpreted and modelled usi… ▽ More We report on an infrared magneto-spectroscopy study of Pb$_{1-x}$Sn$_x$Se, a topological crystalline insulator. We have examined a set of samples, all in the inverted regime of electronic bands, with the tin composition varying from $x=0.2$ to $0.33$. Our analysis shows that the observed response, composed of a series of interband inter-Landau level excitations, can be interpreted and modelled using the relativistic-like Hamiltonian for three-dimensional massive Dirac electrons, expanded to include diagonal quadratic terms that impose band inversion. In our data, we have not found any clear signature of massless electron states that are present on the surface of Pb$_{1-x}$Sn$_x$Se crystals in the inverted regime. Reasons for this unexpected result are discussed. △ Less

Submitted 29 March, 2021; originally announced March 2021.

Comments: 11 pages, 7 figures, to be published in Phys. Rev. B

Journal ref: Phys. Rev. B 103, 155304 (2021)

Anisotropic magneto-thermal transport in Co$_2$MnGa thin films

Authors: Philipp Ritzinger, Helena Reichlova, Dominik Kriegner, Anastasios Markou, Richard Schlitz, Michaela Lammel, Gyu Hyeon Park, Andy Thomas, Pavel Streda, Claudia Felser, Sebastian T. B. Goennenwein, Karel Vyborny

Abstract: Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by f… ▽ More Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by free energy minimisation within the Stoner-Wohlfarth formalism and conclude that both crystalline and non-crystalline components of this magneto-transport phenomenon are present in Co$_2$MnGa. Unlike the AMR which is small in relative terms, the AMTP is large due to a change of sign of the Seebeck coefficient as a function of temperature. This fact is discussed in the context of the Mott rule and further analysis of AMTP components is presented. △ Less

Submitted 28 December, 2020; originally announced December 2020.

Comments: 19 pages, 5 figures

Journal ref: Phys. Rev. B 104, 094406 (2021)

Atomically sharp domain walls in an antiferromagnet

Authors: Filip Krizek, Sonka Reimers, Zdeněk Kašpar, Alberto Marmodoro, Jan Michalička, Ondřej Man, Alexander Edstrom, Oliver J. Amin, Kevin W. Edmonds, Richard P. Campion, Francesco Maccherozzi, Sarnjeet S. Dnes, Jan Zubáč, Jakub Železný, Karel Výborný, Kamil Olejník, Vít Novák, Jan Rusz, Juan C. Idrobo, Peter Wadley, Tomas Jungwirth

Abstract: The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic d… ▽ More The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic devices insensitive to magnetic field perturbations. Here we report the observation that domain walls in an epitaxial crystal of antiferromagnetic CuMnAs can be atomically sharp. We reveal this ultimate domain wall scaling limit using differential phase contrast imaging within aberrationcorrected scanning transmission electron microscopy, which we complement by X-ray magnetic dichroism microscopy and ab initio calculations. We highlight that the atomically sharp domain walls are outside the remits of established spin-Hamiltonian theories and can offer device functionalities unparalleled in ferromagnets. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Comments: 8 pages, 4 figures, Supplementary information

Journal ref: Science advances, 8(13), eabn3535 (2022)

Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions

Authors: Lukáš Nadvorník, Martin Borchert, Liane Brandt, Richard Schlitz, Koen A. de Mare, Karel Výborný, Ingrid Mertig, Gerhard Jakob, Matthias Kläui, Sebastian T. B. Goennenwein, Martin Wolf, Georg Woltersdorf, Tobias Kampfrath

Abstract: Anisotropic magnetoresistance (AMR) is a ubiquitous and versatile probe of magnetic order in contemporary spintronics research. Its origins are usually ascribed to extrinsic effects (i.e. spin-dependent electron scattering), whereas intrinsic (i.e. scattering-independent) contributions are neglected. Here, we measure AMR of polycrystalline thin films of the standard ferromagnets Co, Ni, Ni81Fe19 a… ▽ More Anisotropic magnetoresistance (AMR) is a ubiquitous and versatile probe of magnetic order in contemporary spintronics research. Its origins are usually ascribed to extrinsic effects (i.e. spin-dependent electron scattering), whereas intrinsic (i.e. scattering-independent) contributions are neglected. Here, we measure AMR of polycrystalline thin films of the standard ferromagnets Co, Ni, Ni81Fe19 and Ni50Fe50 over the frequency range from DC to 28 THz. The large bandwidth covers the regimes of both diffusive and ballistic intraband electron transport and, thus, allows us to separate extrinsic and intrinsic AMR components. Analysis of the THz response based on Boltzmann transport theory reveals that the AMR of the Ni, Ni81Fe19 and Ni50Fe50 samples is of predominantly extrinsic nature. However, the Co thin film exhibits a sizeable intrinsic AMR contribution, which is constant up to 28 THz and amounts to more than 2/3 of the DC AMR contrast of 1%. These features are attributed to the hexagonal structure of the Co crystallites. They are interesting for applications in terahertz spintronics and terahertz photonics. Our results show that broadband terahertz electromagnetic pulses provide new and contact-free insights into magneto-transport phenomena of standard magnetic thin films on ultrafast time scales. △ Less

Submitted 1 March, 2021; v1 submitted 13 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. X 11, 021030 (2021)

Significance of nuclear quantum effects in hydrogen bonded molecular chains

Authors: Aleš Cahlík, Jack Hellerstedt, Jesús I. Mendieta-Moreno, Martin Švec, Vijai M. Santhini, Simon Pascal, Diego Soler-Polo, Sigurdur I. Erlingsson, Karel Výborný, **o Mutombo, Ondrej Marsalek, Olivier Siri, Pavel Jelínek

Abstract: In hydrogen bonded systems, nuclear quantum effects such as zero-point motion and tunneling can significantly affect their material properties through underlying physical and chemical processes. Presently, direct observation of the influence of nuclear quantum effects on the strength of hydrogen bonds with resulting structural and electronic implications remains elusive, leaving opportunities for… ▽ More In hydrogen bonded systems, nuclear quantum effects such as zero-point motion and tunneling can significantly affect their material properties through underlying physical and chemical processes. Presently, direct observation of the influence of nuclear quantum effects on the strength of hydrogen bonds with resulting structural and electronic implications remains elusive, leaving opportunities for deeper understanding to harness their fascinating properties. We studied hydrogen-bonded one-dimensional quinonediimine molecular networks which may adopt two isomeric electronic configurations via proton transfer. Herein, we demonstrate that concerted proton transfer promotes a delocalization of π-electrons along the molecular chain, which enhances the cohesive energy between molecular units, increasing the mechanical stability of the chain and giving rise to new electronic in-gap states localized at the ends. These findings demonstrate the identification of a new class of isomeric hydrogen bonded molecular systems where nuclear quantum effects play a dominant role in establishing their chemical and physical properties. We anticipate that this work will open new research directions towards the control of mechanical and electronic properties of low-dimensional molecular materials via concerted proton tunneling. △ Less

Submitted 17 December, 2020; v1 submitted 29 July, 2020; originally announced July 2020.

Efficient Electrical Spin-Splitter Based on Non-Relativistic Collinear Antiferromagnetism

Authors: Rafael González-Hernández, Libor Šmejkal, Karel Výborný, Yuta Yahagi, Jairo Sinova, Tomáš Jungwirth, Jakub Železný

Abstract: Electrical spin-current generation is among the core phenomena driving the field of spintronics. Using {\em ab initio} calculations we show that a room-temperature metallic collinear antiferromagnet RuO$_2$ allows for highly efficient spin-current generation, arising from anisotropically-split bands with conserved up and down spins along the Néel vector axis. The zero net moment antiferromagnet ac… ▽ More Electrical spin-current generation is among the core phenomena driving the field of spintronics. Using {\em ab initio} calculations we show that a room-temperature metallic collinear antiferromagnet RuO$_2$ allows for highly efficient spin-current generation, arising from anisotropically-split bands with conserved up and down spins along the Néel vector axis. The zero net moment antiferromagnet acts as an electrical spin-splitter with a 34$^\circ$ propagation angle between spin-up and spin-down currents. Correspondingly, the spin-conductivity is a factor of three larger than the record value from a survey of 20,000 non-magnetic spin-Hall materials. We propose a versatile spin-splitter-torque concept utilizing antiferromagnetic RuO$_2$ films interfaced with a ferromagnet. △ Less

Submitted 10 August, 2020; v1 submitted 17 February, 2020; originally announced February 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 126, 127701 (2021)

Electrical transport properties of bulk tetragonal CuMnAs

Authors: J Volny, D. Wagenknecht, J Zelezny, P Harcuba, E Duverger-Nedellec, R H Colman, J Kudrnovsky, I Turek, K Uhlirova, K Vyborny

Abstract: Temperature-dependent resistivity and magnetoresistance are measured in bulk tetragonal phase of antiferromagnetic CuMnAs and the latter is found to be anisotropic both due to structure and magnetic order. We compare these findings to model calculations with chemical disorder and finite-temperature phenomena included. The finite-temperature ab initio calculations are based on the alloy analogy mod… ▽ More Temperature-dependent resistivity and magnetoresistance are measured in bulk tetragonal phase of antiferromagnetic CuMnAs and the latter is found to be anisotropic both due to structure and magnetic order. We compare these findings to model calculations with chemical disorder and finite-temperature phenomena included. The finite-temperature ab initio calculations are based on the alloy analogy model implemented within the coherent potential approximation and the results are in fair agreement with experimental data. Regarding the anisotropic magnetoresistance (AMR) which reaches a modest magnitude of 0.12%, we phenomenologically employ the Stoner-Wohlfarth model to identify temperature-dependent magnetic anisotropy of our samples and conclude that the field-dependence of AMR is more similar to that of antiferromagnets than ferromagnets, suggesting that the origin of AMR is not related to isolated Mn magnetic moments. △ Less

Submitted 9 April, 2020; v1 submitted 7 January, 2020; originally announced January 2020.

Comments: 10+ pages, few minor issues corrected

Journal ref: Phys. Rev. Materials 4, 064403 (2020)

Antiferromagnetic CuMnAs: Ab initio description of finite temperature magnetism and resistivity

Authors: David Wagenknecht, Karel Výborný, Karel Carva, Ilja Turek

Abstract: Noncollinear magnetic moments in antiferromagnets (AFM) lead to a complex behavior of electrical transport, even to a decreasing resistivity due to an increasing temperature. Proper treatment of such phenomena is required for understanding AFM systems at finite temperatures; however first-principles description of these effects is complicated. With ab initio techniques, we investigate three models… ▽ More Noncollinear magnetic moments in antiferromagnets (AFM) lead to a complex behavior of electrical transport, even to a decreasing resistivity due to an increasing temperature. Proper treatment of such phenomena is required for understanding AFM systems at finite temperatures; however first-principles description of these effects is complicated. With ab initio techniques, we investigate three models of spin fluctuations (magnons) influencing the transport in AFM CuMnAs; the models are numerically feasible and easily implementable to other studies. We numerically justified a fully relativistic collinear disordered local moment approach and we present its uncompensated generalization. A saturation or a decrease of resistivity caused by magnons, phonons, and their combination (above approx. 400 K) was observed and explained by changes in electronic structure. Within the coherent potential approximation, our finite-temperature approaches may be applied also to systems with impurities, which are found to have a large impact not only on residual resistivity, but also on canting of magnetic moments from the AFM to the ferromagnetic (FM) state. △ Less

Submitted 17 June, 2020; v1 submitted 17 December, 2019; originally announced December 2019.

Comments: 25 pages, 8 figures, 2 tables; accepted version to JMMM

Journal ref: Journal of Magnetism and Magnetic Materials. ISSN 0304-8853, vol. 513, p. 167078 (2020)

Gap formation in helical edge states with magnetic impurities

Authors: Simon Wozny, Karel Vyborny, Wolfgang Belzig, Sigurdur I. Erlingsson

Abstract: Helical edge states appear at the surface of two dimensional topological insulators and are characterized by spin up traveling in one direction and the spin down traveling in the opposite direction. Such states are protected by time reversal symmetry and no backscattering due to scalar impurities can occur. However, magnetic impurities break time reversal symmetry and lead to backscattering. Often… ▽ More Helical edge states appear at the surface of two dimensional topological insulators and are characterized by spin up traveling in one direction and the spin down traveling in the opposite direction. Such states are protected by time reversal symmetry and no backscattering due to scalar impurities can occur. However, magnetic impurities break time reversal symmetry and lead to backscattering. Often their presence is unintentional, but in some cases they are introduced into the sample to open up gaps in the spectrum. We investigate the influence of random impurities on helical edge states, specifically how the gap behaves in the realistic case of impurities having both a magnetic and a scalar component. It turns out that for a fixed magnetic contribution the gap closes when either the scalar component, or Fermi velocity is increased. We compare diagrammatic techniques in the self-consistent Born approximation to numerical calculations which yields good agreement. For experimentally relevant parameters we find that even moderate scalar components can be quite detrimental for the gap formation. △ Less

Submitted 4 July, 2018; originally announced July 2018.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. B 98, 165423 (2018)

Influence of an anomalous temperature-dependence of the phase coherence length on the conductivity of magnetic topological insulators

Authors: V. Tkáč, K. Výborný, V. Komanický, J. Warmuth, M. Michiardi, A. S. Ngankeu, R. Tarasenko M. Vališka, V. Stetsovych, K. Carva, I. Garate, M. Bianchi, J. Wiebe, V. Holý, Ph. Hofmann, G. Springholz, V. Sechovský, J. Honolka

Abstract: Magnetotransport constitutes a useful probe to understand the interplay between electronic band topology and magnetism in spintronics devices based on topological materials. A recent theory of Lu and Shen [Phys. Rev. Lett. 112, 146601 (2014)] on magnetically doped topological insulators predicts that quantum corrections $Δκ$ to the temperature-dependence of the conductivity can change sign during… ▽ More Magnetotransport constitutes a useful probe to understand the interplay between electronic band topology and magnetism in spintronics devices based on topological materials. A recent theory of Lu and Shen [Phys. Rev. Lett. 112, 146601 (2014)] on magnetically doped topological insulators predicts that quantum corrections $Δκ$ to the temperature-dependence of the conductivity can change sign during the Curie transition. This phenomenon has been attributed to a suppression of the Berry phase of the topological surface states at the Fermi level, caused by a magnetic energy gap. Here, we demonstrate experimentally that $Δκ$ can reverse its sign even when the Berry phase at the Fermi level remains unchanged, provided that the inelastic scattering length decreases with temperature below the Curie transition. △ Less

Submitted 26 June, 2018; originally announced June 2018.

Journal ref: Phys. Rev. Lett. 123, 036406 (2019)

Electronic structure and magnetic anisotropies of antiferromagnetic transition-metal difluorides

Authors: Cinthia Antunes Corrêa, Karel Výborný

Abstract: We compare GGA+U calculations with available experimental data and analyze the origin of magnetic anisotropies in MnF$_2$, FeF$_2$, CoF$_2$, and NiF$_2$. We confirm that the magnetic anisotropy of MnF$_2$ stems almost completely from the dipolar interaction, while magnetocrystalline anisotropy energy plays a dominant role in the other three compounds, and discuss how it depends on the details of b… ▽ More We compare GGA+U calculations with available experimental data and analyze the origin of magnetic anisotropies in MnF$_2$, FeF$_2$, CoF$_2$, and NiF$_2$. We confirm that the magnetic anisotropy of MnF$_2$ stems almost completely from the dipolar interaction, while magnetocrystalline anisotropy energy plays a dominant role in the other three compounds, and discuss how it depends on the details of band structure. The latter is critically compared to available optical measurements. The case of CoF$_2$, where magnetocrystalline anisotropy energy strongly depends on $U$, is put into contrast with FeF$_2$ where theoretical predictions of magnetic anisotropies are nearly quantitative. △ Less

Submitted 12 September, 2018; v1 submitted 29 May, 2018; originally announced May 2018.

Comments: 9 pages, 8 figures, and 3 appendices

Journal ref: Phys. Rev. B 97, 235111, 2018

Band structure of CuMnAs probed by optical and photoemission spectroscopy

Authors: M. Veis, J. Minar, G. Steciuk, L. Palatinus, C. Rinaldi, M. Cantoni, D. Kriegner, K. K. Tikuisis, J. Hamrle, M. Zahradnik, R. Antos, J. Zelezny, L. Smejkal, P. Wadley, R. P. Campion, C. Frontera, K. Uhlirova, T. Duchon, P. Kuzel, V. Novak, T. Jungwirth, K. Vyborny

Abstract: Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave… ▽ More Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave functions) which has so far been tested only to a limited extent. We show that AC permittivity (obtained from ellipsometry) and UV photoelectron spectra agree with density functional calculations. Together with the x-ray diffraction and precession electron diffraction tomography, our analysis confirms recent theoretical claim [Phys.Rev.B 96, 094406 (2017)] that copper atoms occupy lattice positions in the basal plane of the tetragonal unit cell. △ Less

Submitted 21 December, 2017; v1 submitted 4 December, 2017; originally announced December 2017.

Comments: 5 pages, 5 figures + Supplementary Information

Journal ref: Phys. Rev. B 97, 125109 (2018)

Magnetic anisotropy in antiferromagnetic hexagonal MnTe

Authors: D. Kriegner, H. Reichlova, J. Grenzer, W. Schmidt, E. Ressouche, J. Godinho, T. Wagner, S. Y. Martin, A. B. Shick, V. V. Volobuev, G. Springholz, V. Holý, J. Wunderlich, T. Jungwirth, K. Výborný

Abstract: Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic mome… ▽ More Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic moments within the hexagonal basal plane are determined to be along $\left<1\bar100\right>$ directions. The spin-flop transition and concomitant repopulation of domains in strong magnetic fields is observed. Using epitaxially induced strain the onset of the spin-flop transition changes from $\sim2$~T to $\sim0.5$~T for films grown on InP and SrF$_2$ substrates, respectively. △ Less

Submitted 17 September, 2018; v1 submitted 23 October, 2017; originally announced October 2017.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. B 96, 214418 (2017)

Optical investigation of magneto-structural phase transition in FeRh

Authors: V. Saidl, M. Brajer, L. Horak, H. Reichlova, K. Vyborny, M. Veis, T. Janda, F. Trojanek, I. Fina, X. Marti, T. Jungwirth, P. Nemec

Abstract: Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near infrared spectral ranges. This phenomenon was used to measure the phase transition temperature in F… ▽ More Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near infrared spectral ranges. This phenomenon was used to measure the phase transition temperature in FeRh films with thicknesses from 6 to 100 nm and it was observed that the hysteretic transition region broadens significantly in the thinner films. △ Less

Submitted 24 August, 2015; originally announced August 2015.

Comments: 7 pages, 4 figures

Journal ref: New J. Phys. 18, 083017 (2016)

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

Authors: D. Kriegner, K. Vyborny, K. Olejnik, H. Reichlova, V. Novak, X. Marti, J. Gazquez, V. Saidl, P. Nemec, V. V. Volobuev, G. Springholz, V. Holy, T. Jungwirth

Abstract: A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a mul… ▽ More A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a multiple-stable memory device in epitaxial manganese telluride (MnTe) which is an antiferromagnetic counterpart of common II-VI semiconductors. Favorable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the applied magnetic field, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states which we set by heat-assisted magneto-recording and by changing the angle of the writing field. We explore the dependence of the magnitude of the zero-field read-out signal on the strength of the writing field and demonstrate the robustness of the antiferromagnetic memory states against strong magnetic field perturbations. We ascribe the multiple-stability in our antiferromagnetic memory to different distributions of domains with the Néel vector aligned along one of the three $c$-plane magnetic easy axes in the hexagonal MnTe film. The domain redistribution is controlled during the heat-assisted recording by the strength and angle of the writing field and freezes when sufficiently below the Néel temperature. △ Less

Submitted 20 August, 2015; originally announced August 2015.

Journal ref: Nature Communications 7,11623 (2016)

Intraband and interband spin-orbit torques in non-centrosymmetric ferromagnets

Authors: Hang Li, H. Gao, Liviu P. Zârbo, K. Výborný, Xuhui Wang, Ion Garate, Fatih Doǧan, A. Čejchan, Jairo Sinova, T. Jungwirth, Aurélien Manchon

Abstract: Intraband and interband contributions to the current-driven spin-orbit torque in magnetic materials lacking inversion symmetry are theoretically studied using Kubo formula. In addition to the current-driven field-like torque ${\bf T}_{\rm FL}= τ_{\rm FL}{\bf m}\times{\bf u}_{\rm so}$ (${\bf u}_{\rm so}$ being a unit vector determined by the symmetry of the spin-orbit coupling), we explore the intr… ▽ More Intraband and interband contributions to the current-driven spin-orbit torque in magnetic materials lacking inversion symmetry are theoretically studied using Kubo formula. In addition to the current-driven field-like torque ${\bf T}_{\rm FL}= τ_{\rm FL}{\bf m}\times{\bf u}_{\rm so}$ (${\bf u}_{\rm so}$ being a unit vector determined by the symmetry of the spin-orbit coupling), we explore the intrinsic contribution arising from impurity-independent interband transitions and producing an anti-dam**-like torque of the form ${\bf T}_{\rm DL}= τ_{\rm DL}{\bf m}\times({\bf u}_{\rm so}\times{\bf m})$. Analytical expressions are obtained in the model case of a magnetic Rashba two-dimensional electron gas, while numerical calculations have been performed on a dilute magnetic semiconductor (Ga,Mn)As modeled by the Kohn-Luttinger Hamiltonian exchanged coupled to the Mn moments. Parametric dependences of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described. △ Less

Submitted 14 January, 2015; originally announced January 2015.

Comments: 10 pages, 5 figures

Relativistic Neel-order fields induced by electrical current in antiferromagnets

Authors: J. Zelezny, H. Gao, K. Vyborny, J. Zemen, J. Masek, A. Manchon, J. Wunderlich, J. Sinova, T. Jungwirth

Abstract: We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium Néel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intra-band and to the intrinsic inter-band spin-orbit fiel… ▽ More We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium Néel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intra-band and to the intrinsic inter-band spin-orbit fields previously reported in ferromagnets with a broken inversion-symmetry crystal. To illustrate their rich physics and utility, we considered bulk Mn2Au with the two spin sublattices forming inversion partners, and a 2D square-lattice antiferromagnet with broken structural inversion symmetry modelled by a Rashba spin-orbit coupling. We propose an AFM memory device with electrical writing and reading. △ Less

Submitted 30 October, 2014; originally announced October 2014.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 113, 157201 (2014)

Nodal "ground states" and orbital textures in semiconductor quantum dots

Authors: Jeongsu Lee, Karel Výborný, Jong E. Han, Igor Žutić

Abstract: Conventional understanding implies that the ground state of a nonmagnetic quantum mechanical system should be nodeless. While this notion also provides a valuable guidance in understanding the ordering of energy levels in semiconductor nanostructures, there are reports that $\textit{nodal}$ ground states for holes are possible. However, the existence of such nodal states has been debated and even… ▽ More Conventional understanding implies that the ground state of a nonmagnetic quantum mechanical system should be nodeless. While this notion also provides a valuable guidance in understanding the ordering of energy levels in semiconductor nanostructures, there are reports that $\textit{nodal}$ ground states for holes are possible. However, the existence of such nodal states has been debated and even viewed merely as an artifact of a $\boldsymbol{k{\cdot}p}$ model. Using complementary approaches of both $\boldsymbol{k{\cdot}p}$ and tight-binding models, further supported by an effective Hamiltonian for a continuum model, we reveal that the nodal ground states in quantum dots are not limited to a specific approach. Remarkably, the emergence of the nodal hole states at the top of the valence band can be attributed to the formation of the orbital vortex textures through competition between the hole kinetic energy and the coupling to the conduction band states. We suggest an experimental test for our predictions of the reversed energy ordering and the existence of nodal ground states. We discuss how our findings and the studies of orbital textures could be also relevant for other materials systems. △ Less

Submitted 13 December, 2013; v1 submitted 29 November, 2013; originally announced November 2013.

Comments: 19 pages, 14 figures, submitted to PRB, identical to v2 with pdf compatibility issue of figures resolved

Journal ref: Phys. Rev. B 89, 045315 (2014)

Systematic study of magnetic linear dichroism and birefringence in (Ga,Mn)As

Authors: N. Tesarova, T. Ostatnicky, V. Novak, K. Olejnik, J. Subrt, C. T. Ellis, A. Mukherjee, J. Lee, G. M. Sipahi, J. Sinova, J. Hamrle, T. Jungwirth, P. Nemec, J. Cerne, K. Vyborny

Abstract: Magnetic linear dichroism and birefringence in (Ga,Mn)As epitaxial layers is investigated by measuring the polarization plane rotation of reflected linearly polarized light when magnetization lies in the plane of the sample. We report on the spectral dependence of the rotation and ellipticity angles in a broad energy range of 0.12-2.7 eV for a series of optimized samples covering a wide range on M… ▽ More Magnetic linear dichroism and birefringence in (Ga,Mn)As epitaxial layers is investigated by measuring the polarization plane rotation of reflected linearly polarized light when magnetization lies in the plane of the sample. We report on the spectral dependence of the rotation and ellipticity angles in a broad energy range of 0.12-2.7 eV for a series of optimized samples covering a wide range on Mn-do**s and Curie temperatures and find a clear blue shift of the dominant peak at energy exceeding the host material band gap. These results are discussed in the general context of the GaAs host band structure and also within the framework of the k.p and mean-field kinetic-exchange model of the (Ga,Mn)As band structure. We find a semi-quantitative agreement between experiment and theory and discuss the role of disorder-induced non-direct transitions on magneto-optical properties of (Ga,Mn)As. △ Less

Submitted 27 August, 2013; originally announced August 2013.

Comments: 18 pages

Observation of a Berry phase anti-dam** spin-orbit torque

Authors: H. Kurebayashi, Jairo Sinova, D. Fang, A. C. Irvine, J. Wunderlich, V. Novak, R. P. Campion, B. L. Gallagher, E. K. Vehstedt, L. P. Zarbo, K. Vyborny, A. J. Ferguson, T. Jungwirth

Abstract: Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with spin-dependent scattering giving rise to a relativistic anti-dam** spin-orbit torque (SOT) in structures with broken space-inversion symmetry. The alternative… ▽ More Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with spin-dependent scattering giving rise to a relativistic anti-dam** spin-orbit torque (SOT) in structures with broken space-inversion symmetry. The alternative interpretation combines the relativistic spin Hall effect (SHE), making the normal-conductor an injector of a spin-current, with the non-relativistic spin-transfer torque (STT) in the ferromagnet. Remarkably, the SHE in these experiments originates from the Berry phase effect in the band structure of a clean crystal and the anti-dam** STT is also based on a disorder-independent transfer of spin from carriers to magnetization. Here we report the observation of an anti-dam** SOT stemming from an analogous Berry phase effect to the SHE. The SOT alone can therefore induce magnetization dynamics based on a scattering-independent principle. The ferromagnetic semiconductor (Ga,Mn)As we use has a broken space-inversion symmetry in the crystal. This allows us to consider a bare ferromagnetic element which eliminates by design any SHE related contribution to the spin torque. We provide an intuitive picture of the Berry phase origin of the anti-dam** SOT and a microscopic modeling of measured data. △ Less

Submitted 8 June, 2013; originally announced June 2013.

Comments: Send to: [email protected]

Tailoring Chirp in Spin-Lasers

Authors: Guilhem Boeris, Jeongsu Lee, Karel Vyborny, Igor Zutic

Abstract: The usefulness of semiconductor lasers is often limited by the undesired frequency modulation, or chirp, a direct consequence of the intensity modulation and carrier dependence of the refractive index in the gain medium. In spin-lasers, realized by injecting, optically or electrically, spin-polarized carriers, we elucidate paths to tailoring chirp. We provide a generalized expression for chirp in… ▽ More The usefulness of semiconductor lasers is often limited by the undesired frequency modulation, or chirp, a direct consequence of the intensity modulation and carrier dependence of the refractive index in the gain medium. In spin-lasers, realized by injecting, optically or electrically, spin-polarized carriers, we elucidate paths to tailoring chirp. We provide a generalized expression for chirp in spin-lasers and introduce modulation schemes that could simultaneously eliminate chirp and enhance the bandwidth, as compared to the conventional (spin-unpolarized) lasers. △ Less

Submitted 21 February, 2012; originally announced February 2012.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 100, 121111 (2012)

Magnetic anisotropies of quantum dots

Authors: Karel Vyborny, J. E. Han, Rafal Oszwaldowski, Igor Zutic, A. G. Petukhov

Abstract: Magnetic anisotropies in quantum dots (QDs) doped with magnetic ions are discussed in terms of two frameworks: anisotropic $g$-factors and magnetocrystalline anisotropy energy. It is shown that even a simple model of zinc-blende p-doped QDs displays a rich diagram of magnetic anisotropies in the QD parameter space. Tuning the confinement allows to control magnetic easy axes in QDs in ways not avai… ▽ More Magnetic anisotropies in quantum dots (QDs) doped with magnetic ions are discussed in terms of two frameworks: anisotropic $g$-factors and magnetocrystalline anisotropy energy. It is shown that even a simple model of zinc-blende p-doped QDs displays a rich diagram of magnetic anisotropies in the QD parameter space. Tuning the confinement allows to control magnetic easy axes in QDs in ways not available for the better-studied bulk. △ Less

Submitted 14 February, 2012; originally announced February 2012.

Comments: submitted to PRB

Journal ref: Phys. Rev. B 85, 155312 (2012)

From laterally modulated two-dimensional electron gas towards artificial graphene

Authors: L. Nadvornik, M. Orlita, N. A. Goncharuk, L. Smrcka, V. Novak, V. Jurka, K. Hruska, Z. Vyborny, Z. R. Wasilewski, M. Potemski, K. Vyborny

Abstract: Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as well as its splitting into several modes. Our explanation, based on a perturbative calculation, describes the observed phenomena as a weak effect of the lateral… ▽ More Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as well as its splitting into several modes. Our explanation, based on a perturbative calculation, describes the observed phenomena as a weak effect of the lateral potential on the two-dimensional electron gas. Using this approach, we found a correlation between parameters of the lateral patterning and the created effective potential and obtain thus insights on how the electronic miniband structure has been tuned. The miniband dispersion was calculated using a simplified model and allowed us to formulate four basic criteria that have to be satisfied to reach graphene-like physics in such systems. △ Less

Submitted 16 December, 2011; v1 submitted 28 April, 2011; originally announced April 2011.

Journal ref: New J. Phys. 14, 053002 (2012)

Spin-orbit driven ferromagnetic resonance: A nanoscale magnetic characterisation technique

Authors: D. Fang, H. Kurebayashi, J. Wunderlich, K. Vyborny, L. P. Zarbo, R. P. Campion, A. Casiraghi, B. L. Gallagher, T. Jungwirth, A. J. Ferguson

Abstract: We demonstrate a scalable new ferromagnetic resonance (FMR) technique based on the spin-orbit interaction. An alternating current drives FMR in uniform ferromagnetic structures patterned from the dilute magnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P). This allows the direct measurement of magnetic anisotropy coefficients and dam** parameters for individual nano-bars. By analysing the ferroma… ▽ More We demonstrate a scalable new ferromagnetic resonance (FMR) technique based on the spin-orbit interaction. An alternating current drives FMR in uniform ferromagnetic structures patterned from the dilute magnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P). This allows the direct measurement of magnetic anisotropy coefficients and dam** parameters for individual nano-bars. By analysing the ferromagnetic resonance lineshape, we perform vector magnetometry on the current-induced driving field, observing contributions with symmetries of both the Dresselhaus and Rashba spin-orbit interactions. △ Less

Submitted 10 December, 2010; originally announced December 2010.

Comments: 4 figures

Journal ref: Nature Nanotechnology, 6 413 (2011)

Spin polarization of (Ga,Mn)As measured by Andreev Spectroscopy: The role of spin-active scattering

Authors: S. Piano, R. Grein, C. J. Mellor, K. Vyborny, R. Campion, M. Wang, M. Eschrig, B. L. Gallagher

Abstract: We investigate the spin-polarization of the ferromagnetic semiconductor (Ga,Mn)As by point contact Andreev reflection spectroscopy. The conductance spectra are analyzed using a recent theoretical model that accounts for momentum- and spin-dependent scattering at the interface. This allows us to fit the data without resorting, as in the case of the standard spin-dependent Blonder-Tinkham-Klapwijk (… ▽ More We investigate the spin-polarization of the ferromagnetic semiconductor (Ga,Mn)As by point contact Andreev reflection spectroscopy. The conductance spectra are analyzed using a recent theoretical model that accounts for momentum- and spin-dependent scattering at the interface. This allows us to fit the data without resorting, as in the case of the standard spin-dependent Blonder-Tinkham-Klapwijk (BTK) model, to an effective temperature or a statistical distribution of superconducting gaps. We find a transport polarization PC{\approx}57%, in considerably better agreement with the k{\cdot}p kinetic-exchange model of (Ga,Mn)As, than the significantly larger estimates inferred from the BTK model. The temperature dependence of the conductance spectra is fully analyzed. △ Less

Submitted 18 February, 2011; v1 submitted 10 August, 2010; originally announced August 2010.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 83, 081305(R) (2011)

Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As

Authors: Karel Výborný, Jan Kucera, Jairo Sinova, A. W. Rushforth, B. L. Gallagher, T. Jungwirth

Abstract: Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the GaAs valence band as the dominant mechanism of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. This fact allows to construct a simple analytical… ▽ More Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the GaAs valence band as the dominant mechanism of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. This fact allows to construct a simple analytical model of the AMR consisting of two heavy-hole bands whose charge carriers are scattered on the impurity potential of the Mn atoms. The model predicts the correct sign of the AMR (resistivity parallel to magnetization is smaller than perpendicular to magnetization) and identifies its origin arising from the destructive interference between electric and magnetic part of the scattering potential of magnetic ionized Mn acceptors when the carriers move parallel to the magnetization. △ Less

Submitted 17 June, 2009; originally announced June 2009.

Comments: 9 pages, 3 figs, subm to PRB

Journal ref: Phys Rev B 80, 165204 (2009)

Anisotropic magnetoresistance of spin-orbit coupled carriers scattered from polarized magnetic impurities

Authors: Maxim Trushin, Karel Vyborny, Peter Moraczewski, Alexey A. Kovalev, John Schliemann, Tomas Jungwirth

Abstract: Anisotropic magnetoresistance (AMR) is a relativistic magnetotransport phenomenon arising from combined effects of spin-orbit coupling and broken symmetry of a ferromagnetically ordered state of the system. In this work we focus on one realization of the AMR in which spin-orbit coupling enters via specific spin-textures on the carrier Fermi surfaces and ferromagnetism via elastic scattering of c… ▽ More Anisotropic magnetoresistance (AMR) is a relativistic magnetotransport phenomenon arising from combined effects of spin-orbit coupling and broken symmetry of a ferromagnetically ordered state of the system. In this work we focus on one realization of the AMR in which spin-orbit coupling enters via specific spin-textures on the carrier Fermi surfaces and ferromagnetism via elastic scattering of carriers from polarized magnetic impurities. We report detailed heuristic examination, using model spin-orbit coupled systems, of the emergence of positive AMR (maximum resistivity for magnetization along current), negative AMR (minimum resistivity for magnetization along current), and of the crystalline AMR (resistivity depends on the absolute orientation of the magnetization and current vectors with respect to the crystal axes) components. We emphasize potential qualitative differences between pure magnetic and combined electro-magnetic impurity potentials, between short-range and long-range impurities, and between spin-1/2 and higher spin-state carriers. Conclusions based on our heuristic analysis are supported by exact solutions to the integral form of the Boltzmann transport equation in archetypical two-dimensional electron systems with Rashba and Dresselhaus spin-orbit interactions and in the three-dimensional spherical Kohn-Littinger model. We include comments on the relation of our microscopic calculations to standard phenomenology of the full angular dependence of the AMR, and on the relevance of our study to realistic, two-dimensional conduction-band carrier systems and to anisotropic transport in the valence band of diluted magnetic semiconductors. △ Less

Submitted 12 October, 2009; v1 submitted 23 April, 2009; originally announced April 2009.

Comments: 15 pages, Kohn-Littinger model added

Journal ref: Phys. Rev. B 80, 134405 (2009)

Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance

Authors: Alexey A. Kovalev, Yaroslav Tserkovnyak, Karel Vyborny, Jairo Sinova

Abstract: We present a study of transport in multiple-band non-interacting Fermi metallic systems based on the Keldysh formalism, taking into account the effects of Berry curvature due to spin-orbit coupling. We apply this formalism to a Rashba 2DEG ferromagnet and calculate the anomalous Hall effect (AHE) and anisotropic magnetoresistance (AMR). The numerical calculations reproduce analytical results in… ▽ More We present a study of transport in multiple-band non-interacting Fermi metallic systems based on the Keldysh formalism, taking into account the effects of Berry curvature due to spin-orbit coupling. We apply this formalism to a Rashba 2DEG ferromagnet and calculate the anomalous Hall effect (AHE) and anisotropic magnetoresistance (AMR). The numerical calculations reproduce analytical results in the metallic regime revealing the crossover between the skew scattering mechanism dominating in the clean systems and intrinsic mechanism dominating in the moderately dirty systems. As we increase the disorder further, the AHE starts to diminish due to the spectral broadening of the quasiparticles. Although for certain parameters this reduction of the AHE can be approximated as $σ_{xy}\thicksimσ_{xx}^{\varphi}$ with $\varphi$ varying around 1.6, this is found not to be true in general as $σ_{xy}$ can go through a change in sign as a function of disorder strength in some cases. The reduction region in which the quasiparticle approximation is meaningful is relatively narrow; therefore, a theory with a wider range of applicability is called for. By considering the higher order skew scattering processes, we resolve some discrepancies between the AHE results obtained by using the Keldysh, Kubo and Boltzmann approaches. We also show that similar higher order processes are important for the AMR when the nonvertex and vertex parts cancel each other. We calculate the AMR in anisotropic systems properly taking into account the anisotropy of the non-equilibrium distribution function. These calculations confirm recent findings on the unreliability of common approximations to the Boltzmann equation. △ Less

Submitted 15 February, 2009; originally announced February 2009.

Comments: 21 pages, 14 figures

Journal ref: Phys. Rev. B 79, 195129 (2009)

Semiclassical framework for the calculation of transport anisotropies

Authors: Karel Vyborny, Alexey A. Kovalev, Jairo Sinova, T. Jungwirth

Abstract: We present a procedure for finding the exact solution to the linear-response Boltzmann equation for two-dimensional anisotropic systems and demonstrate it on examples of non-crystalline anisotropic magnetoresistance in a system with spin-orbit interaction. We show that two decoupled integral equations must be solved in order to find the non-equilibrium distribution function up to linear order in… ▽ More We present a procedure for finding the exact solution to the linear-response Boltzmann equation for two-dimensional anisotropic systems and demonstrate it on examples of non-crystalline anisotropic magnetoresistance in a system with spin-orbit interaction. We show that two decoupled integral equations must be solved in order to find the non-equilibrium distribution function up to linear order in the applied electric field. The examples are all based on the Rashba system with charged magnetic scatterers, a system where the non-equilibrium distribution function and anisotropic magnetoresistance can be evaluated analytically. Exact results are compared to earlier widely-used approximative approaches. We find circumstances under which approximative approaches may become unreliable even on a qualitative level. △ Less

Submitted 31 October, 2008; originally announced October 2008.

Comments: submitted to PRB

Journal ref: Phys. Rev. B 79, 045427 (2009)

Low voltage control of ferromagnetism in a semiconductor p-n junction

Authors: M. H. S. Owen, J. Wunderlich, V. Novak, K. Olejnik, 3 J. Zemen, K. Vyborny, S. Ogawa, A. C. Irvine, A. J. Ferguson, H. Sirringhaus, T. Jungwirth

Abstract: The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based on manipulating the collective state of electron spins in a ferromagnet provides complementary technologies for reading magnetic bits or for the solid-state me… ▽ More The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based on manipulating the collective state of electron spins in a ferromagnet provides complementary technologies for reading magnetic bits or for the solid-state memories. The integration of these two distinct areas of microelectronics in one physical element, with a potentially major impact on the power consumption and scalability of future devices, requires to find efficient means for controlling magnetization electrically. Current induced magnetization switching phenomena represent a promising step towards this goal, however, they relay on relatively large current densities. The direct approach of controlling the magnetization by low-voltage charge depletion effects is seemingly unfeasible as the two worlds of semiconductors and metal ferromagnets are separated by many orders of magnitude in their typical carrier concentrations. Here we demonstrate that this concept is viable by reporting persistent magnetization switchings induced by short electrical pulses of a few volts in an all-semiconductor, ferromagnetic p-n junction. △ Less

Submitted 6 July, 2008; originally announced July 2008.

Comments: 11 pages, 4 figures

Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As

Authors: V. Novak, K. Olejnik, J. Wunderlich, M. Cukr, K. Vyborny, A. W. Rushforth, K. W. Edmonds, R. P. Campion, B. L. Gallagher, Jairo Sinova, T. Jungwirth

Abstract: We observe a singularity in the temperature derivative $dρ/dT$ of resistivity at the Curie point of high-quality (Ga,Mn)As ferromagnetic semiconductors with $T_c$'s ranging from approximately 80 to 185 K. The character of the anomaly is sharply distinct from the critical contribution to transport in conventional dense-moment magnetic semiconductors and is reminiscent of the $dρ/dT$ singularity i… ▽ More We observe a singularity in the temperature derivative $dρ/dT$ of resistivity at the Curie point of high-quality (Ga,Mn)As ferromagnetic semiconductors with $T_c$'s ranging from approximately 80 to 185 K. The character of the anomaly is sharply distinct from the critical contribution to transport in conventional dense-moment magnetic semiconductors and is reminiscent of the $dρ/dT$ singularity in transition metal ferromagnets. Within the critical region accessible in our experiments, the temperature dependence on the ferromagnetic side can be explained by dominant scattering from uncorrelated spin fluctuations. The singular behavior of $dρ/dT$ on the paramagnetic side points to the important role of short-range correlated spin fluctuations. △ Less

Submitted 27 June, 2008; v1 submitted 9 April, 2008; originally announced April 2008.

Comments: 4 pages, 3 figures

Journal ref: Phys.Rev.Letters 101, 077201 (2008)

Hybrid skew scattering regime of the anomalous Hall effect in Rashba systems: unifying Keldysh, Boltzmann, and Kubo formalisms

Authors: Alexey A. Kovalev, Karel Výborný, Jairo Sinova

Abstract: We present the analytical description of the anomalous Hall effect (AHE) in a 2DEG ferromagnet within the Keldysh formalism. These results unify all three linear response approaches to anomalous Hall transport and close a long standing debate. We are able to identify a new extrinsic AHE regime dominated by a hybrid skew scattering mechanism. This new contribution is inversely proportional to the… ▽ More We present the analytical description of the anomalous Hall effect (AHE) in a 2DEG ferromagnet within the Keldysh formalism. These results unify all three linear response approaches to anomalous Hall transport and close a long standing debate. We are able to identify a new extrinsic AHE regime dominated by a hybrid skew scattering mechanism. This new contribution is inversely proportional to the impurity concentration, resembling the normal skew scattering, {\em but} independent of the impurity-strength, resembling the side-jump mechanism. Within the Kubo formalism this regime is captured by higher order diagrams which, although weak, dominate when both subbands are occupied; this regime can be detected by variable remote do** experiments that we describe. △ Less

Submitted 23 June, 2008; v1 submitted 8 March, 2008; originally announced March 2008.

Comments: 5 pages, 2 figures

Journal ref: Phys. Rev. B 78, 041305(R) (2008)

Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As

Authors: E. De Ranieri, A. W. Rushforth, K. Vyborny, U. Rana, E. Ahmed, R. P. Campion, C. T. Foxon, B. L. Gallagher, A. C. Irvine, J. Wunderlich, T. Jungwirth

Abstract: It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)As are sensitive to lattice strains as small as 10^-4 and that strain can be controlled by lattice parameter engineering during growth, through post growth lithography, and electrically by bonding the (Ga,Mn)As sample to a piezoelectric transducer. In this work we show that analogous effects are observed in crystalline compo… ▽ More It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)As are sensitive to lattice strains as small as 10^-4 and that strain can be controlled by lattice parameter engineering during growth, through post growth lithography, and electrically by bonding the (Ga,Mn)As sample to a piezoelectric transducer. In this work we show that analogous effects are observed in crystalline components of the anisotropic magnetoresistance (AMR). Lithographically or electrically induced strain variations can produce crystalline AMR components which are larger than the crystalline AMR and a significant fraction of the total AMR of the unprocessed (Ga,Mn)As material. In these experiments we also observe new higher order terms in the phenomenological AMR expressions and find that strain variation effects can play important role in the micromagnetic and magnetotransport characteristics of (Ga,Mn)As lateral nanoconstrictions. △ Less

Submitted 27 February, 2008; v1 submitted 22 February, 2008; originally announced February 2008.

Comments: 11 pages, 4 figures, references fixed

Journal ref: New J. Phys. 10 (2008), 065003

Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures

Authors: A. W. Rushforth, E. De Ranieri, J. Zemen, J. Wunderlich, K. W. Edmonds, C. S. King, E. Ahmad, R. P. Campion, C. T. Foxon, B. L. Gallagher, K. Vyborny, J. Kucera, T. Jungwirth

Abstract: We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis which is detected by measuring longitudinal and transverse anisotropic magnetoresistance coefficients. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As pr… ▽ More We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis which is detected by measuring longitudinal and transverse anisotropic magnetoresistance coefficients. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As provide microscopic understanding of the measured effect. Electrically induced magnetization switching and detection of unconventional crystalline components of the anisotropic magnetoresistance are presented, illustrating the generic utility of the piezo voltage control to provide new device functionalities and in the research of micromagnetic and magnetotransport phenomena in diluted magnetic semiconductors. △ Less

Submitted 22 January, 2008; v1 submitted 6 January, 2008; originally announced January 2008.

Comments: Submitted to Physical Review Letters. Updates version 1 to include a more detailed discussion of the effect of strain on the anisotropic magnetoresistance

Journal ref: Physical Review B 78, 085314 (2008)

The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices

Authors: A. W. Rushforth, K. Výborný, C. S. King, K. W. Edmonds, R. P. Campion, C. T. Foxon, J. Wunderlich, A. C. Irvine, V. Novák, K. Olejník, A. A. Kovalev, Jairo Sinova, T. Jungwirth, B. L. Gallagher

Abstract: We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analyzed. These methods are used to explore the unusual phenomenology of the AMR in ultra thin (5nm) (Ga,Mn)As layers and to demonst… ▽ More We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analyzed. These methods are used to explore the unusual phenomenology of the AMR in ultra thin (5nm) (Ga,Mn)As layers and to demonstrate how the components of the AMR can be engineered through lithography induced local lattice relaxations. We expand on our previous [Phys. Rev. Lett. \textbf{99}, 147207 (2007)] theoretical analysis and numerical calculations to present a simplified analytical model for the origin of the non-crystalline AMR. We find that the sign of the non-crystalline AMR is determined by the form of spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential. △ Less

Submitted 16 December, 2007; originally announced December 2007.

Comments: Submitted to JMMM for conference proceedings of WUN-SPIN 2007 (York, UK)

Journal ref: doi:10.1016/j.jmmm.2008.04.070

Magnetocrystalline anisotropy controlled local magnetic configurations in (Ga,Mn)As spin-transfer-torque microdevices

Authors: J. Wunderlich, A. C. Irvine, J. Zemen, V. Holy, A. W. Rushforth, E. De Ranieri, U. Rana, K. Vyborny, Jairo Sinova, C. T. Foxon, R. P. Campion, D. A. Williams, B. L. Gallagher, T. Jungwirth

Abstract: The large saturation magnetization in conventional dense moment ferromagnets offers flexible means of manipulating the ordered state through demagnetizing shape anisotropy fields but these dipolar fields, in turn, limit the integrability of magnetic elements in information storage devices. We show that in a (Ga,Mn)As dilute moment ferromagnet, with comparatively weaker magnetic dipole interactio… ▽ More The large saturation magnetization in conventional dense moment ferromagnets offers flexible means of manipulating the ordered state through demagnetizing shape anisotropy fields but these dipolar fields, in turn, limit the integrability of magnetic elements in information storage devices. We show that in a (Ga,Mn)As dilute moment ferromagnet, with comparatively weaker magnetic dipole interactions, locally tunable magnetocrystalline anisotropy can take the role of the internal field which determines the magnetic configuration. Experiments and theoretical modeling are presented for lithographically patterned microchannels and the phenomenon is attributed to lattice relaxations across the channels. The utility of locally controlled magnetic anisotropies is demonstrated in current induced switching experiments. We report structure sensitive, current induced in-plane magnetization switchings well below the Curie temperature at critical current densities 10^5 Acm^-2. The observed phenomenology shows signatures of a contribution from domain-wall spin-transfer-torque effects. △ Less

Submitted 23 July, 2007; originally announced July 2007.

Comments: 9 pages, 9 figures, Phys. Rev. B in press

Response of incompressible fractional quantum Hall states to magnetic and non-magnetic impurities

Authors: Karel Výborný, Christian Müller, Daniela Pfannkuche

Abstract: Using exact diagonalization we examine the response of several most prominent fractional quantum Hall states to a single local impurity. The 2/3 singlet state is found to be more inert than the polarized one in spite of its smaller incompressibility gap. Based on its spin-spin correlation functions we interpret it as a liquid of electron pairs with opposite spin. A comparison of different types… ▽ More Using exact diagonalization we examine the response of several most prominent fractional quantum Hall states to a single local impurity. The 2/3 singlet state is found to be more inert than the polarized one in spite of its smaller incompressibility gap. Based on its spin-spin correlation functions we interpret it as a liquid of electron pairs with opposite spin. A comparison of different types of impurities, non-magnetic and magnetic, is presented. △ Less

Submitted 4 March, 2007; originally announced March 2007.

Comments: 6 pages, 9 figures, submitted to PRB

Anisotropic Magnetoresistance components in (Ga,Mn)As

Authors: A. W. Rushforth, K. Výborný, C. S. King, K. W. Edmonds, R. P. Campion, C. T. Foxon, J. Wunderlich, A. C. Irvine, P. Vašek, V. Novák, K. Olejník, Jairo Sinova, T. Jungwirth, B. L. Gallagher

Abstract: Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic physical aspects of this relativistic transport effect. The non-crystalline AMR reflects anisotropic lifetimes of the holes due to polarized Mn impurities while the crystalline AMR is associated with valence band war**.… ▽ More Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic physical aspects of this relativistic transport effect. The non-crystalline AMR reflects anisotropic lifetimes of the holes due to polarized Mn impurities while the crystalline AMR is associated with valence band war**. We find that the sign of the non-crystalline AMR is determined by the form of spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential. We develop experimental methods directly yielding the non-crystalline and crystalline AMR components which are then independently analyzed. We report the observation of an AMR dominated by a large uniaxial crystalline component and show that AMR can be modified by local strain relaxation. We discuss generic implications of our experimental and theoretical findings including predictions for non-crystalline AMR sign reversals in dilute moment systems. △ Less

Submitted 6 August, 2007; v1 submitted 15 February, 2007; originally announced February 2007.

Comments: 4 pages, 3 figures. Phys. Rev. Lett. in press

Integral and fractional Quantum Hall Ising ferromagnets

Authors: K. Vyborny, O. Certik, D. Pfannkuche, D. Wodzinski, A. Wojs, J. J. Quinn

Abstract: We compare quantum Hall systems at filling factor 2 to those at filling factors 2/3 and 2/5, corresponding to the exact filling of two lowest electron or composite fermion (CF) Landau levels. The two fractional states are examples of CF liquids with spin dynamics. There is a close analogy between the ferromagnetic (spin polarization P=1) and paramagnetic (P=0) incompressible ground states that o… ▽ More We compare quantum Hall systems at filling factor 2 to those at filling factors 2/3 and 2/5, corresponding to the exact filling of two lowest electron or composite fermion (CF) Landau levels. The two fractional states are examples of CF liquids with spin dynamics. There is a close analogy between the ferromagnetic (spin polarization P=1) and paramagnetic (P=0) incompressible ground states that occur in all three systems in the limits of large and small Zeeman spin splitting. However, the excitation spectra are different. At filling factor 2, we find spin domains at half-polarization (P=1/2), while antiferromagnetic order seems most favorable in the CF systems. The transition between P=0 and 1, as seen when e.g. the magnetic field is tilted, is also studied by exact diagonalization in toroidal and spherical geometries. The essential role of an effective CF-CF interaction is discussed, and the experimentally observed incompresible half-polarized state is found in some models. △ Less

Submitted 29 September, 2006; originally announced September 2006.

Journal ref: Phys. Rev. B 75, 045434 (2007)

Transport gap in a nu=1/3 quantum Hall system: a probe for skyrmions

Authors: A. F. Dethlefsen, R. J. Haug, K. Vyborny, O. Certik, A. Wojs

Abstract: The dependence of the activated gap on magnetic field is studied for the fractional filling factor~1/3. By comparing the experimental results with results from exact diagonalization calculations we are able to identify the excitation of a small antiskyrmion in the low-field regime and a cross-over to spinless excitations at higher magnetic fields. The effect of sample quality is studied. On the… ▽ More The dependence of the activated gap on magnetic field is studied for the fractional filling factor~1/3. By comparing the experimental results with results from exact diagonalization calculations we are able to identify the excitation of a small antiskyrmion in the low-field regime and a cross-over to spinless excitations at higher magnetic fields. The effect of sample quality is studied. On the side of the theory, comparison between different geometries (torus and sphere) and different sizes is carried out. Under inclusion of Landau level mixing and finite thickness, we obtain a good agreement between calculated energies and experimental results. △ Less

Submitted 17 March, 2006; originally announced March 2006.

Comments: submitted to PRB

Journal ref: Phys. Rev. B 74, 195324 (2006)