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Conversion of stable crystals to metastable crystals in a solution by periodic change of temperature
Authors:
Hiroyasu Katsuno,
Makio Uwaha
Abstract:
Using a Becker-Döring type model including cluster incorporation, we study the possibility of conversion of stable crystals to metastable crystals in a solution by a periodic change of temperature. At low temperature, both stable and metastable crystals grow by coalescence with abundant clusters. At high temperature, a large amount of small clusters produced by the dissolution of crystals inhibits…
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Using a Becker-Döring type model including cluster incorporation, we study the possibility of conversion of stable crystals to metastable crystals in a solution by a periodic change of temperature. At low temperature, both stable and metastable crystals grow by coalescence with abundant clusters. At high temperature, a large amount of small clusters produced by the dissolution of crystals inhibits the dissolution of crystals, and the imbalance in the amount of crystals increases. By repeating this process, the periodic temperature change can convert stable crystals into metastable crystals.
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Submitted 21 February, 2023;
originally announced February 2023.
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Anomalous Crystal Shapes of Topological Crystalline Insulators
Authors:
Yutaro Tanaka,
Tiantian Zhang,
Makio Uwaha,
Shuichi Murakami
Abstract:
Understanding crystal shapes is a fundamental subject in surface science. It is now well studied how chemical bondings determine crystal shapes via dependence of surface energies on surface orientations. Meanwhile, discoveries of topological materials have led us to a new paradigm in surface science, and one can expect that topological surface states may affect surface energies and crystal facets…
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Understanding crystal shapes is a fundamental subject in surface science. It is now well studied how chemical bondings determine crystal shapes via dependence of surface energies on surface orientations. Meanwhile, discoveries of topological materials have led us to a new paradigm in surface science, and one can expect that topological surface states may affect surface energies and crystal facets in an unconventional way. Here we show that the surface energy of glide-symmetric topological crystalline insulators (TCI) depends on the surface orientation in a singular way via the parity of the Miller index. This singular surface energy of the TCI affects equilibrium crystal shapes, resulting in emergence of unique crystal facets of the TCI. This singular dependence of the topological surface states is unique to the TCI protected by the glide symmetry in contrast to a TCI protected by a mirror symmetry. In addition, we show that such singular surface states of the TCI protected by the glide symmetries can be realized in KHgSb with first-principles calculations. Our results provide a basis for designs and manipulations of crystal facets by utilizing symmetry and topology.
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Submitted 15 August, 2022; v1 submitted 16 March, 2022;
originally announced March 2022.
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Effect of Two-Dimensionality on Step Bunching Induced by the Drift of Adatoms
Authors:
Masahide Sato,
Makio Uwaha,
Yukio Hirose
Abstract:
We study the effect of two-dimensionality on step bunching induced by drift of adatoms. When anisotropy of the diffusion coefficient changes alternately on consecutive terraces like a Si(001) vicinal face, bunching occurs with the drift of adatoms. If the fluctuation of step bunches is neglected as in the one-dimensional model, the bunching with step-down drift is faster than that with step-up d…
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We study the effect of two-dimensionality on step bunching induced by drift of adatoms. When anisotropy of the diffusion coefficient changes alternately on consecutive terraces like a Si(001) vicinal face, bunching occurs with the drift of adatoms. If the fluctuation of step bunches is neglected as in the one-dimensional model, the bunching with step-down drift is faster than that with step-up drift in contradiction with the experiment by Latyshev and coworkers. In a two-dimensional model, the step bunches wander heavily with step-up drift and recombination with neighboring bunches occur more frequently than those with step-down drift and the bunching is accelerated. When the difference of kinetic coefficients between two types of steps is taken into account, the bunching with step-up drift can be faster than that with step-down drift.
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Submitted 22 June, 2005;
originally announced June 2005.
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Drift-Induced Step Instabilities Due to the Gap in the Diffusion Coefficient
Authors:
Masahide Sato,
Makio Uwaha,
Yukio Saito
Abstract:
On a Si(111) vicinal face near the structural transition temperature, the $1 \times 1$ structure and the $7 \times 7$ structure coexist in a terrace: the $1 \times 1$ structure is in the lower side of the step edge and the $7 \times 7$ structure in the upper side. The diffusion coefficient of adatoms is different in the two structures. Taking account of the gap in the diffusion coefficient at th…
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On a Si(111) vicinal face near the structural transition temperature, the $1 \times 1$ structure and the $7 \times 7$ structure coexist in a terrace: the $1 \times 1$ structure is in the lower side of the step edge and the $7 \times 7$ structure in the upper side. The diffusion coefficient of adatoms is different in the two structures. Taking account of the gap in the diffusion coefficient at the step, we study the possibility of step wandering induced by drift of adatoms. A linear stability analysis shows that the step wandering always occurs with step-down drift if the diffusion coefficient has a gap at the step. Formation of straight grooves by the step wandering is expected from a nonlinear analysis. The stability analysis also shows that step bunching occurs irrespective of the drift direction if the diffusion in the lower side of the step is faster. The step bunching disturbs the formation of grooves. If step-step repulsion is strong, however, the step bunching is suppressed and the straight grooves appear. Monte Carlo simulation confirms these predictions.
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Submitted 20 July, 2004;
originally announced July 2004.
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Step Bunching with Alternation of Structural Parameters
Authors:
Masahide Sato,
Makio Uwaha,
Tomonori Mori,
Yukio Hirose
Abstract:
By taking account of the alternation of structural parameters, we study bunching of impermeable steps induced by drift of adatoms on a vicinal face of Si(001). With the alternation of diffusion coefficient, the step bunching occurs irrespective of the direction of the drift if the step distance is large. Like the bunching of permeable steps, the type of large terraces is determined by the drift…
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By taking account of the alternation of structural parameters, we study bunching of impermeable steps induced by drift of adatoms on a vicinal face of Si(001). With the alternation of diffusion coefficient, the step bunching occurs irrespective of the direction of the drift if the step distance is large. Like the bunching of permeable steps, the type of large terraces is determined by the drift direction. With step-down drift, step bunches grows faster than those with step-up drift. The ratio of the growth rates is larger than the ratio of the diffusion coefficients. Evaporation of adatoms, which does not cause the step bunching, decreases the difference. If only the alternation of kinetic coefficient is taken into account, the step bunching occurs with step-down drift. In an early stage, the initial fluctuation of the step distance determines the type of large terraces, but in a late stage, the type of large terraces is opposite to the case of alternating diffusion coefficient.
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Submitted 8 May, 2003;
originally announced May 2003.
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Step Repulsion Mediates Wandering on a Si(001) Vicinal Face
Authors:
M. Sato,
M. Uwaha,
Y. Saito,
Y. Hirose
Abstract:
With a Si(001) vicinal surface in mind, we study step wandering instability on a vicinal surface with an anisotropic surface diffusion whose orientation dependence alternates on each consecutive terrace. In a conserved system step wandering takes place with step-up adatom drift. Repulsive interaction between steps is found indispensable for the instability. Monte Carlo simulation with a strong r…
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With a Si(001) vicinal surface in mind, we study step wandering instability on a vicinal surface with an anisotropic surface diffusion whose orientation dependence alternates on each consecutive terrace. In a conserved system step wandering takes place with step-up adatom drift. Repulsive interaction between steps is found indispensable for the instability. Monte Carlo simulation with a strong repulsive step interaction confirms the result of linear stability analysis, and further shows that in-phase step wandering produces straight grooves. Grooves widen as their amplitudes increase in proportion to the square root of time.
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Submitted 16 October, 2002;
originally announced October 2002.
