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Magnetism, heat capacity and electronic structure of EuCd$_2$P$_2$ in view of its colossal magnetoresistance
Authors:
Dmitry Yu. Usachov,
Sarah Krebber,
Kirill A. Bokai,
Artem V. Tarasov,
Marvin Kopp,
Charu Garg,
Alexander Virovets,
Jens Müller,
Max Mende,
Georg Poelchen,
Denis V. Vyalikh,
Cornelius Krellner,
Kristin Kliemt
Abstract:
The mechanism of the peculiar transport properties around the magnetic ordering temperature of semiconducting antiferromagnetic EuCd$_2$P$_2$ is not yet understood. With a huge peak in the resistivity observed above the Néel temperature, $T_{\rm N}=10.6\,\rm K$, it exhibits a colossal magnetoresistance effect. Recent reports on observations of ferromagnetic contributions above $T_{\rm N}$ as well…
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The mechanism of the peculiar transport properties around the magnetic ordering temperature of semiconducting antiferromagnetic EuCd$_2$P$_2$ is not yet understood. With a huge peak in the resistivity observed above the Néel temperature, $T_{\rm N}=10.6\,\rm K$, it exhibits a colossal magnetoresistance effect. Recent reports on observations of ferromagnetic contributions above $T_{\rm N}$ as well as metallic behavior below this temperature have motivated us to perform a comprehensive characterization of this material, including its resistivity, heat capacity, magnetic properties and electronic structure. Our transport measurements revealed quite different temperature dependence of resistivity with the maximum at $14\,\rm K$ instead of previously reported $18\,\rm K$. Low-field susceptibility data support the presence of static ferromagnetism above $T_{\rm N}$ and show a complex behavior of the material at small applied magnetic fields. Namely, signatures of reorientation of magnetic domains are observed up to $T=16\,\rm K$. Our magnetization measurements indicate a magnetocrystalline anisotropy which also leads to a preferred alignment of the magnetic clusters above $T_{\rm N}$. The momentum-resolved photoemission experiments at temperatures from $24\,\rm K$ down to $2.5\,\rm K$ indicate the permanent presence of a fundamental band gap without change of the electronic structure when going through $T_N$ that is in contradiction with previous results. We performed \textit{ab initio} band structure calculations which are in good agreement with the measured photoemission data when assuming an antiferromagnetic ground state. Calculations for the ferromagnetic phase show a much smaller bandgap, indicating the importance of possible ferromagnetic contributions for the explanation of the colossal magnetoresistance effect in the related EuZn$_2$P$_2$.
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Submitted 29 February, 2024;
originally announced February 2024.
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Magnetic Dirac semimetal state of (Mn,Ge)Bi$_2$Te$_4$
Authors:
Alexander S. Frolov,
Dmitry Yu. Usachov,
Artem V. Tarasov,
Alexander V. Fedorov,
Kirill A. Bokai,
Ilya Klimovskikh,
Vasily S. Stolyarov,
Anton I. Sergeev,
Alexander N. Lavrov,
Vladimir A. Golyashov,
Oleg E. Tereshchenko,
Giovanni Di Santo,
Luca Petaccia,
Oliver J. Clark,
Jaime Sanchez-Barriga,
Lada V. Yashina
Abstract:
For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dep…
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For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dependent magnetic properties, composition-independent pairwise exchange interactions along with an easy magnetization axis. The bulk band gap gradually decreases to zero for $x$ from 0 to 0.4, before reopening for $x>0.6$, evidencing topological phase transitions (TPTs) between topologically nontrivial phases and the semimetal state. The TPTs are driven purely by the variation of orbital contributions. By tracing the x-dependent $6p$ contribution to the states near the fundamental gap, the effective spin-orbit coupling variation is extracted. As $x$ varies, the maximum of this contribution switches from the valence to the conduction band, thereby driving two TPTs. The gapless state observed at $x=0.42$ closely resembles a Dirac semimetal above the Neel temperature and shows a magnetic gap below, which is clearly visible in raw photoemission data. The observed behavior of the Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$ system thereby demonstrates an ability to precisely control topological and magnetic properties of TIs.
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Submitted 22 June, 2023;
originally announced June 2023.
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Insight into the electronic structure of the centrosymmetric skyrmion magnet GdRu$_2$Si$_2$
Authors:
S. V. Eremeev,
D. Glazkova,
G. Poelchen,
A. Kraiker,
K. Ali,
A. V. Tarasov,
S. Schulz,
K. Kliemt,
E. V. Chulkov,
V. S. Stolyarov,
A. Ernst,
C. Krellner,
D. Yu. Usachov,
D. V. Vyalikh
Abstract:
The discovery of a square magnetic-skyrmion lattice in GdRu$_2$Si$_2$, with the smallest so far found skyrmion diameter and without a geometrically frustrated lattice, has attracted significant attention, particularly for potential applications in memory devices and quantum computing. In this work, we present a comprehensive study of surface and bulk electronic structures of GdRu$_2$Si$_2$ by util…
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The discovery of a square magnetic-skyrmion lattice in GdRu$_2$Si$_2$, with the smallest so far found skyrmion diameter and without a geometrically frustrated lattice, has attracted significant attention, particularly for potential applications in memory devices and quantum computing. In this work, we present a comprehensive study of surface and bulk electronic structures of GdRu$_2$Si$_2$ by utilizing momentum-resolved photoemission (ARPES) measurements and first-principles calculations. We show how the electronic structure evolves during the antiferromagnetic transition when a peculiar helical order of 4$f$ magnetic moments within the Gd layers sets in. A nice agreement of the ARPES-derived electronic structure with the calculated one has allowed us to characterize the features of the Fermi surface (FS), unveil the nested region along the $k_z$ at the corner of the 3D FS, and reveal their orbital compositions. Our findings suggest that the Ruderman-Kittel-Kasuya-Yosida interaction plays a decisive role in stabilizing the spiral-like order of Gd 4$f$ moments responsible for the skyrmion physics in GdRu$_2$Si$_2$. Our results provide a deeper understanding of electronic and magnetic properties of this material, which is crucial for predicting and develo** novel skyrmion-based devices.
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Submitted 2 June, 2023;
originally announced June 2023.
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Moment canting and domain effects in antiferromagnetic DyRh$_2$Si$_2$
Authors:
Kristin Kliemt,
Michelle Ocker,
Sarah Krebber,
Susanne Schulz,
Denis V. Vyalikh,
Cornelius Krellner,
Dmitry Yu. Usachov
Abstract:
A combined experimental and theoretical study of the layered antiferromagnetic compound DyRh$_2$Si$_2$ in the ThCr$_2$Si$_2$-type structure is presented. The heat capacity shows two transitions upon cooling, the first one at the N{é}el temperature $T_{\rm N}=55\,\rm K$ and a second one at $T_{\rm N2}=12\,\rm K$. Using magnetization measurements, we study the canting process of the Dy moments upon…
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A combined experimental and theoretical study of the layered antiferromagnetic compound DyRh$_2$Si$_2$ in the ThCr$_2$Si$_2$-type structure is presented. The heat capacity shows two transitions upon cooling, the first one at the N{é}el temperature $T_{\rm N}=55\,\rm K$ and a second one at $T_{\rm N2}=12\,\rm K$. Using magnetization measurements, we study the canting process of the Dy moments upon changing the temperature and can assign $T_{\rm N2}$ to the onset of the canting of the magnetic moments towards the $[100]$ direction away from the $c$ axis. Furthermore, we found that the field dependence of the magnetization is highly anisotropic and shows a two-step process for $H\parallel 001$. We used a mean-field model to determine the crystalline electric field as well as the exchange interaction parameters. Our magnetization data together with the calculations reveal a moment orientation close to the $[101]$ direction in the tetragonal structure at low temperatures and fields. Applying photoemission electron microscopy, we explore the (001) surface of the cleaved DyRh$_2$Si$_2$ single crystal and visualize Si- and Dy-terminated surfaces. Our results indicate that the Si-Rh-Si surface protects the deeper lying magnetically active Dy layers and is thus attractive for investigation of magnetic domains and their properties in the large family of LnT$_2$Si$_2$ materials.
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Submitted 27 April, 2023; v1 submitted 17 April, 2023;
originally announced April 2023.
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Colossal magnetoresistance in EuZn$_2$P$_2$ and its electronic and magnetic structure
Authors:
Sarah Krebber,
Marvin Kopp,
Charu Garg,
Kurt Kummer,
Jörg Sichelschmidt,
Susanne Schulz,
Georg Poelchen,
Max Mende,
Alexander V. Virovets,
Konstantin Warawa,
Mark D. Thomson,
Artem V. Tarasov,
Dmitry Yu. Usachov,
Denis V. Vyalikh,
Hartmut G. Roskos,
Jens Müller,
Cornelius Krellner,
Kristin Kliemt
Abstract:
We investigate single crystals of the trigonal antiferromagnet EuZn$_2$P$_2$ ($P\overline{3}m1$) by means of electrical transport, magnetization measurements, X-ray magnetic scattering, optical reflectivity, angle-resolved photoemission spectroscopy (ARPES) and ab-initio band structure calculations (DFT+U). We find that the electrical resistivity of EuZn$_2$P$_2$ increases strongly upon cooling an…
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We investigate single crystals of the trigonal antiferromagnet EuZn$_2$P$_2$ ($P\overline{3}m1$) by means of electrical transport, magnetization measurements, X-ray magnetic scattering, optical reflectivity, angle-resolved photoemission spectroscopy (ARPES) and ab-initio band structure calculations (DFT+U). We find that the electrical resistivity of EuZn$_2$P$_2$ increases strongly upon cooling and can be suppressed in magnetic fields by several orders of magnitude (CMR effect). Resonant magnetic scattering reveals a magnetic ordering vector of $q = (0\, 0\, \frac{1}{2})$, corresponding to an $A$-type antiferromagnetic (AFM) order, below $T_{\rm N} = 23.7\,\rm K$. We find that the moments are canted out of the $a-a$ plane by an angle of about $40^{\circ}\pm 10^{\circ}$ degrees and aligned along the [100] in the $a-a$ plane. We observe nearly isotropic magnetization behavior for low fields and low temperatures which is consistent with the magnetic scattering results. The magnetization measurements show a deviation from the Curie-Weiss behavior below $\approx 150\,\rm K$, the temperature below which also the field dependence of the material's resistivity starts to increase. An analysis of the infrared reflectivity spectrum at $T=295\,\rm K$ allows us to resolve the main phonon bands and intra-/interband transitions, and estimate indirect and direct band gaps of $E_i^{\mathrm{opt}}=0.09\,\rm{eV}$ and $E_d^{\mathrm{opt}}=0.33\,\rm{eV}$, respectively, which are in good agreement with the theoretically predicted ones. The experimental band structure obtained by ARPES is nearly $T$-independent above and below $T_{\rm N}$. The comparison of the theoretical and experimental data shows a weak intermixing of the Eu 4$f$ states close to the $Γ$ point with the bands formed by the phosphorous 3$p$ orbitals leading to an induction of a small magnetic moment at the P sites.
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Submitted 16 August, 2023; v1 submitted 28 February, 2023;
originally announced February 2023.
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Factors influencing the energy gap in topological states of antiferromagnetic MnBi$_2$Te$_4$
Authors:
A. M. Shikin,
T. P. Makarova,
A. V. Eryzhenkov,
D. Yu. Usachov,
D. A. Estyunin,
D. A. Glazkova,
I. I. Klimovskikh,
A. G. Rybkin,
A. V. Tarasov
Abstract:
The experimentally measured angle-resolved photoemission dispersion maps for MnBi$_{2}$Te$_{4}$ samples, which show different energy gaps at the Dirac point (DP), are compared with the results of theoretical calculations to find the conditions for the best agreement between theory and experiment. We have analyzed different factors which influence the Dirac gap width: (i) the surface van der Waals…
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The experimentally measured angle-resolved photoemission dispersion maps for MnBi$_{2}$Te$_{4}$ samples, which show different energy gaps at the Dirac point (DP), are compared with the results of theoretical calculations to find the conditions for the best agreement between theory and experiment. We have analyzed different factors which influence the Dirac gap width: (i) the surface van der Waals (SvdW) distance between the first and second septuple layers (SLs), (ii) the magnetic moment on Mn atoms, (iii) the spin-orbit coupling (SOC) strength for the surface Te and Bi atoms and related changes in the localization of the topological surface states (TSSs). It was shown that all these factors may change the gap width at the DP in a wide range from 5 to $\sim$90~meV. We show that the Dirac gap variation is mainly determined by the corresponding changes in the TSSs spatial distribution. The best agreement between the presented experimental data (with the Dirac gaps between $\sim$15 and 55~meV) and the calculations takes place for a slightly compressed SvdW interval (of about -3.5~\% compared to the bulk value) with modified SOC for surface atoms (that can occur in the presence of various defects in the near-surface region). We show that upon changing the values of the SvdW interval and surface SOC strength the TSSs spatial distribution shifts between the SLs with opposite magnetizations, which leads to a non-monotonic change in the Dirac gap size.
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Submitted 1 June, 2022; v1 submitted 16 May, 2022;
originally announced May 2022.
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Observation of a cubic Rashba effect in the surface spin structure of rare-earth ternary materials
Authors:
D. Yu. Usachov,
I. A. Nechaev,
G. Poelchen,
M. Güttler,
E. E. Krasovskii,
S. Schulz,
A. Generalov,
K. Kliemt,
A. Kraiker,
C. Krellner,
K. Kummer,
S. Danzenbächer,
C. Laubschat,
A. P. Weber,
E. V. Chulkov,
A. F. Santander-Syro,
T. Imai,
K. Miyamoto,
T. Okuda,
D. V. Vyalikh
Abstract:
Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile spin-polarized carriers at the surface. Spin-resolved measurements of the photoemission current from the Si-terminated surface of the antiferromagnet TbRh2Si2 and their analysis within an ab initio one-step theory unveil an unusual triple winding…
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Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile spin-polarized carriers at the surface. Spin-resolved measurements of the photoemission current from the Si-terminated surface of the antiferromagnet TbRh2Si2 and their analysis within an ab initio one-step theory unveil an unusual triple winding of the electron spin along the fourfold-symmetric constant energy contours of the surface states. A two-band k.p model is presented that yields the triple winding as a cubic Rashba effect. The curious in-plane spin-momentum locking is remarkably robust and remains intact across a paramagnetic-antiferromagnetic transition in spite of spin-orbit interaction on Rh atoms being considerably weaker than the out-of-plane exchange field due to the Tb 4f moments.
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Submitted 5 February, 2020;
originally announced February 2020.
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Boron nitride monolayer growth on vicinal Ni(111) surfaces systematically studied with a curved crystal
Authors:
L. Fernandez,
A. A. Makarova,
C. Laubschat,
D. V. Vyalikh,
D. Yu. Usachov,
J. E. Ortega,
F. Schiller
Abstract:
The structural and electronic properties of hexagonal boron nitride (hBN) grown on stepped Ni surfaces are systematically investigated using a cylindrical Ni crystal as a tunable substrate. Our experiments reveal homogeneous hBN monolayer coating of the entire Ni curved surface, which in turn undergoes an overall faceting. The faceted system is defined by step-free hBN/Ni(111) terraces alternating…
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The structural and electronic properties of hexagonal boron nitride (hBN) grown on stepped Ni surfaces are systematically investigated using a cylindrical Ni crystal as a tunable substrate. Our experiments reveal homogeneous hBN monolayer coating of the entire Ni curved surface, which in turn undergoes an overall faceting. The faceted system is defined by step-free hBN/Ni(111) terraces alternating with strongly tilted hBN/Ni(115) or hBN/Ni(110) nanostripes, depending on whether we have A-type or B-type vicinal surfaces, respectively. Such deep substrate self-organization is explained by both the rigidity of the hBN lattice and the lack of registry with Ni crystal planes in the vicinity of the (111) surface. The analysis of the electronic properties by photoemission and absorption spectroscopies reveal a weaker hBN/Ni interaction in (110)- and (115)-oriented facets, as well as an upward shift of the valence band with respect to the band position at the hBN/Ni(111) terrace.
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Submitted 23 January, 2019; v1 submitted 22 November, 2018;
originally announced November 2018.
