Heat dissipation in few-layer MoS2 and MoS2/hBN heterostructure
Authors:
Alois Arrighi,
Elena del Corro,
Daniel Navarro Urrios,
Marius V. Costache,
Juan F. Sierra,
Kenji Watanabe,
Takashi Taniguchi,
J. A. Garrido,
Sergio O. Valenzuela,
Clivia M. Sotomayor Torres,
Marianna Sledzinska
Abstract:
State-of-the-art fabrication and characterization techniques have been employed to measure the thermal conductivity of suspended, single-crystalline MoS2 and MoS2/hBN heterostructures. Two-laser Raman scattering thermometry was used combined with real time measurements of the absorbed laser power, which allowed us to determine the thermal conductivities without any assumptions. Measurements on MoS…
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State-of-the-art fabrication and characterization techniques have been employed to measure the thermal conductivity of suspended, single-crystalline MoS2 and MoS2/hBN heterostructures. Two-laser Raman scattering thermometry was used combined with real time measurements of the absorbed laser power, which allowed us to determine the thermal conductivities without any assumptions. Measurements on MoS2 layers with thicknesses of 5 and 14 exhibit thermal conductivity in the range between 12 and 24 Wm-1K-1. Additionally, after determining the thermal conductivity of a selected MoS2 sample, an hBN flake was transferred onto it and the effective thermal conductivity of the heterostructure was subsequently measured. Remarkably, despite that the thickness of the hBN layer was less than a third of the thickness of the MoS2 layer, the heterostructure showed an almost eight-fold increase in the thermal conductivity, being able to dissipate more than 10 times the laser power without any visible sign of damage. These results are consistent with a high thermal interface conductance between MoS2 and hBN and an efficient in-plane heat spreading driven by hBN. Indeed, we estimate G 70 MWm-2K-1 which is significantly higher than previously reported values. Our work therefore demonstrates that the insertion of hBN layers in potential MoS2 based devices holds the promise for efficient thermal management.
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Submitted 14 July, 2021;
originally announced July 2021.
Injection locking in an optomechanical coherent phonon source
Authors:
Guillermo Arregui,
Martin Facundo Colombano,
Jérémie Maire,
Alessandro Pitanti,
Nestor Eduardo Capuj,
Amadeu Griol,
Alejandro Martínez,
Clivia Marfa Sotomayor Torres,
Daniel Navarro Urrios
Abstract:
Spontaneous locking of the phase of a coherent phonon source to an external reference is demonstrated in an optomechanical oscillator based on a self-triggered free-carrier/temperature limit cycle. Synchronization is observed when the pump laser driving the mechanical oscillator to a self-sustained state is modulated by a radiofrequency tone. We employ a pump-probe phonon detection scheme based on…
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Spontaneous locking of the phase of a coherent phonon source to an external reference is demonstrated in an optomechanical oscillator based on a self-triggered free-carrier/temperature limit cycle. Synchronization is observed when the pump laser driving the mechanical oscillator to a self-sustained state is modulated by a radiofrequency tone. We employ a pump-probe phonon detection scheme based on an independent optical cavity to observe only the mechanical oscillator dynamics. The lock range of the oscillation frequency, i.e., the Arnold tongue, is experimentally determined over a range of external reference strengths, evidencing the possibility to tune the oscillator frequency for a range up to 350 kHz. The stability of the coherent phonon source is evaluated via its phase noise, with a maximum achieved suppression of 44 dBc/Hz at 1kHz offset for a 100 MHz mechanical resonator. Introducing a weak modulation in the excitation laser reveals as a further knob to trigger, control and stabilise the dynamical solutions of self-pulsing based optomechanical oscillators, thus enhancing their potential as acoustic wave sources in a single layer silicon platform.
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Submitted 24 September, 2020; v1 submitted 18 September, 2020;
originally announced September 2020.
