-
Photo-thermoelectric properties and their use in study of transport properties of both carriers from a single bulk sample
Authors:
Zhenyu Pan,
Zheng Zhu,
Jeffrey J. Urban,
Fan Yang,
Heng Wang
Abstract:
We describe a theory on photo-thermoelectric properties of a semiconductor, which include photo-conductivity, photo-Seebeck coefficient, and photo-Hall effect. We demonstrate that these properties provide a powerful tool for the study of carrier transport in semiconductors. Even though photo-carrier generation is a complicated process which often prohibits quantitative analysis as their species or…
▽ More
We describe a theory on photo-thermoelectric properties of a semiconductor, which include photo-conductivity, photo-Seebeck coefficient, and photo-Hall effect. We demonstrate that these properties provide a powerful tool for the study of carrier transport in semiconductors. Even though photo-carrier generation is a complicated process which often prohibits quantitative analysis as their species or numbers are not known. Using bulk samples seems even less likely as the photo-carrier only affect a thin layer. Our method will allow researchers to bypass these difficulties, to use only measured properties and determine both electron and hole mobilities as well as the ratio between electrons and holes from a bulk sample. We provide initial experiment verification of our theory in the end using two distinctively different semiconductors.
△ Less
Submitted 31 October, 2019;
originally announced October 2019.
-
Tackling Challenges in Seebeck Coefficient Measurement of Ultra-High Resistance Samples with an AC Technique
Authors:
Zhenyu Pan,
Zheng Zhu,
Jonathon Wilcox,
Jeffrey J. Urban,
Fan Yang,
Heng Wang
Abstract:
Seebeck coefficient is a widely-studied semiconductor property. Conventional Seebeck coefficient measurements are based on DC voltage measurement. Normally this is performed on samples with low resistances below a few Mohm level. Meanwhile, certain semiconductors are highly intrinsic and resistive, many examples can be found in optical and photovoltaic materials. The hybrid halide perovskites that…
▽ More
Seebeck coefficient is a widely-studied semiconductor property. Conventional Seebeck coefficient measurements are based on DC voltage measurement. Normally this is performed on samples with low resistances below a few Mohm level. Meanwhile, certain semiconductors are highly intrinsic and resistive, many examples can be found in optical and photovoltaic materials. The hybrid halide perovskites that have gained extensive attention recently are a good example. Few credible studies exist on the Seebeck coefficient of, CH3NH3PbI3, for example. We report here an AC technique based Seebeck coefficient measurement, which makes high quality voltage measurement on samples with resistances up to 100Gohm. This is achieved through a specifically designed setup to enhance sample isolation and reduce meter loading. As a demonstration, we performed Seebeck coefficient measurement of a CH3NH3PbI3 thin film at dark and found S = +550 microV/K. Such property of this material has not been successfully studied before.
△ Less
Submitted 30 October, 2019;
originally announced October 2019.
-
Polymer morphology and interfacial charge transfer dominate over energy-dependent scattering in organic-inorganic thermoelectrics
Authors:
Pawan Kumar,
Edmond W. Zaia,
Erol Yildirim,
DV Maheswar Repaka,
Shuo-Wang Yang,
Jeffrey J. Urban,
Kedar Hippalgaonkar
Abstract:
Hybrid (organic-inorganic) materials have emerged as a promising class of thermoelectric materials, achieving power factors exceeding those of either constituent. The mechanism of this enhancement is still under debate, and pinpointing the underlying physics has proven difficult. In this work, we combine transport measurements with theoretical simulations and first principles calculations on a pro…
▽ More
Hybrid (organic-inorganic) materials have emerged as a promising class of thermoelectric materials, achieving power factors exceeding those of either constituent. The mechanism of this enhancement is still under debate, and pinpointing the underlying physics has proven difficult. In this work, we combine transport measurements with theoretical simulations and first principles calculations on a prototypical PEDOT:PSS-Te(Cux) nanowire hybrid material system to understand the effect of templating and charge redistribution on the thermoelectric performance. Further, we apply the recently developed Kang-Snyder charge transport model to show that scattering of holes in the hybrid system, defined by the energy-dependent scattering parameter, remains the same as in the host polymer matrix; performance is instead dictated by polymer morphology manifested in an energy-independent transport coefficient. We build upon this language to explain thermoelectric behavior in a variety of PEDOT and P3HT based hybrids acting as a guide for future work in multiphase materials.
△ Less
Submitted 7 October, 2018;
originally announced October 2018.
-
Modiffied Schottky emission to explain thickness dependence and slow depolarization in BaTiO$_3$ nanowires
Authors:
Y. Qi,
J. M. P. Martirez,
Wissam A. Saidi,
J. J. Urban,
W. S. Yun,
J. E. Spanier,
A. M. Rappe
Abstract:
We investigate the origin of the depolarization rates in ultrathin adsorbate-stabilized ferroelectric wires. By applying density functional theory calculations and analytic modeling, we demonstrate that the depolarization results from the leakage of charges stored at the surface adsorbates, which play an important role in the polarization stabilization. The depolarization speed varies with thickne…
▽ More
We investigate the origin of the depolarization rates in ultrathin adsorbate-stabilized ferroelectric wires. By applying density functional theory calculations and analytic modeling, we demonstrate that the depolarization results from the leakage of charges stored at the surface adsorbates, which play an important role in the polarization stabilization. The depolarization speed varies with thickness and temperature, following several complex trends. A comprehensive physical model is presented, in which quantum tunneling, Schottky emission and temperature dependent electron mobility are taken into consideration. This model simulates experimental results, validating the physical mechanism. We also expect that this improved tunneling-Schottky emission model could be applied to predict the retention time of polarization and the leakage current for various ferroelectric materials with different thicknesses and temperatures.
△ Less
Submitted 13 February, 2015;
originally announced February 2015.
-
Carrier Lifetime Enhancement in a Tellurium Nanowire/PEDOT:PSS Nanocomposite by Sulfur Passivation
Authors:
James N. Heyman,
Ayaskanta Sahu,
Nelson E. Coates,
Brittany Ehmann,
Jeffery J. Urban
Abstract:
We report static and time-resolved terahertz (THz) conductivity measurements of a high- performance thermoelectric material containing tellurium nanowires in a PEDOT:PSS matrix. Composites were made with and without sulfur passivation of the nanowires surfaces. The material with sulfur linkers (TeNW/PD-S) is less conductive but has a longer carrier lifetime than the formulation without (TeNW/PD).…
▽ More
We report static and time-resolved terahertz (THz) conductivity measurements of a high- performance thermoelectric material containing tellurium nanowires in a PEDOT:PSS matrix. Composites were made with and without sulfur passivation of the nanowires surfaces. The material with sulfur linkers (TeNW/PD-S) is less conductive but has a longer carrier lifetime than the formulation without (TeNW/PD). We find real conductivities at f = 1THz of σ(TeNW/PD) = 160 S/cm and σ(TeNW/PD-S) = 5.1 S/cm. These values are much larger than the corresponding DC conductivities, suggesting DC conductivity is limited by structural defects. The free-carrier lifetime in the nanowires is controlled by recombination and trap** at the nanowire surfaces. We find surface recombination velocities in bare tellurium nanowires (22m/s) and TeNW/PD-S (40m/s) that are comparable to evaporated tellurium thin films. The surface recombination velocity in TeNW/PD (509m/s) is much larger, indicating a higher interface trap density.
△ Less
Submitted 21 November, 2014;
originally announced November 2014.
-
Magnetic Switching of Phase-Slip Dissipation in NbSe2 Nanobelts
Authors:
Abram Falk,
Mandar M. Deshmukh,
Amy L. Prieto,
Jeffrey J. Urban,
Andrea Jonas,
Hongkun Park
Abstract:
The stability of the superconducting dissipationless and resistive states in single-crystalline NbSe2 nanobelts is characterized by transport measurements in an external magnetic field (H). Current-driven electrical measurements show voltage steps, indicating the nucleation of phase-slip structures. Well below the critical temperature, the position of the voltage steps exhibits a sharp, periodic…
▽ More
The stability of the superconducting dissipationless and resistive states in single-crystalline NbSe2 nanobelts is characterized by transport measurements in an external magnetic field (H). Current-driven electrical measurements show voltage steps, indicating the nucleation of phase-slip structures. Well below the critical temperature, the position of the voltage steps exhibits a sharp, periodic dependence as a function of H. This phenomenon is discussed in the context of two possible mechanisms: the interference of the order parameter and the periodic rearrangement of the vortex lattice within the nanobelt.
△ Less
Submitted 26 August, 2006;
originally announced August 2006.
