Twisted bilayer graphene fabricated by direct bonding in a high vacuum
Authors:
Hitoshi Imamura,
Anton Visikovskiy,
Ryosuke Uotani,
Takashi Kajiwara,
Hiroshi Ando,
Takushi Iimori,
Kota Iwata,
Toshio Miyamachi,
Kan Nakatsuji,
Kazuhiko Mase,
Tetsuroh Shirasawa,
Fumio Komori,
Satoru Tanaka
Abstract:
Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to…
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Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to obtain. In this study, we resolved these problems by directly transferring the easy-to-exfoliate CVD-grown graphene on SiC substrate to graphene in a high vacuum without using any transfer assisting medium and observed electronic band modulations due to the strong interlayer coupling.
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Submitted 9 May, 2020; v1 submitted 4 May, 2020;
originally announced May 2020.
