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Post-fabrication tuning of circular Bragg resonators for enhanced emitter-cavity coupling
Authors:
Tobias M. Krieger,
Christian Weidinger,
Thomas Oberleitner,
Gabriel Undeutsch,
Michele B. Rota,
Naser Tajik,
Maximilian Aigner,
Quirin Buchinger,
Christian Schimpf,
Ailton J. Garcia Jr.,
Saimon F. Covre da Silva,
Sven Höfling,
Tobias Huber-Loyola,
Rinaldo Trotta,
Armando Rastelli
Abstract:
Solid-state quantum emitters embedded in circular Bragg resonators are attractive due to their ability to emit quantum states of light with high brightness and low multi-photon probability. As for any emitter-microcavity system, fabrication imperfections limit the spatial and spectral overlap of the emitter with the cavity mode, thus limiting their coupling strength. Here, we show that an initial…
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Solid-state quantum emitters embedded in circular Bragg resonators are attractive due to their ability to emit quantum states of light with high brightness and low multi-photon probability. As for any emitter-microcavity system, fabrication imperfections limit the spatial and spectral overlap of the emitter with the cavity mode, thus limiting their coupling strength. Here, we show that an initial spectral mismatch can be corrected after device fabrication by repeated wet chemical etching steps. We demonstrate ~16 nm wavelength tuning for optical modes in AlGaAs resonators on oxide, leading to a 4-fold Purcell enhancement of the emission of single embedded GaAs quantum dots. Numerical calculations reproduce the observations and suggest that the achievable performance of the resonator is only marginally affected in the explored tuning range. We expect the method to be applicable also to circular Bragg resonators based on other material platforms, thus increasing the device yield of cavity-enhanced solid-state quantum emitters.
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Submitted 27 September, 2023;
originally announced September 2023.
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Hyperfine-interaction limits polarization entanglement of photons from semiconductor quantum dots
Authors:
Christian Schimpf,
Francesco Basso Basset,
Maximilian Aigner,
Wolfgang Atteneder,
Laia Gínes,
Gabriel Undeutsch,
Marcus Reindl,
Daniel Huber,
Dorian Gangloff,
Evgeny Chekhovich,
Christian Schneider,
Sven Höfling,
Ana Predojević,
Rinaldo Trotta,
Armando Rastelli
Abstract:
Excitons in quantum dots are excellent sources of polarization-entangled photon pairs, but a quantitative understanding of their interaction with the nuclear spin bath is still missing. Here we investigate the role of hyperfine energy shifts using experimentally accessible parameters and derive an upper limit to the achievable entanglement fidelity. Our results are consistent with all available li…
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Excitons in quantum dots are excellent sources of polarization-entangled photon pairs, but a quantitative understanding of their interaction with the nuclear spin bath is still missing. Here we investigate the role of hyperfine energy shifts using experimentally accessible parameters and derive an upper limit to the achievable entanglement fidelity. Our results are consistent with all available literature, indicate that spin-noise is often the dominant process limiting the entanglement in InGaAs quantum dots, and suggest routes to alleviate its effect.
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Submitted 27 April, 2023; v1 submitted 12 February, 2023;
originally announced February 2023.
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Beyond the four-level model: Dark and hot states in quantum dots degrade photonic entanglement
Authors:
Barbara Ursula Lehner,
Tim Seidelmann,
Gabriel Undeutsch,
Christian Schimpf,
Santanu Manna,
Michał Gawełczyk,
Saimon Filipe Covre da Silva,
Xueyong Yuan,
Sandra Stroj,
Doris E. Reiter,
Vollrath Martin Axt,
Armando Rastelli
Abstract:
Entangled photon pairs are essential for a multitude of photonic quantum applications. To date, the best performing solid-state quantum emitters of entangled photons are semiconductor quantum dots operated around liquid-helium temperatures. To favor the widespread deployment of these sources, it is important to explore and understand their behavior at temperatures accessible with compact Stirling…
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Entangled photon pairs are essential for a multitude of photonic quantum applications. To date, the best performing solid-state quantum emitters of entangled photons are semiconductor quantum dots operated around liquid-helium temperatures. To favor the widespread deployment of these sources, it is important to explore and understand their behavior at temperatures accessible with compact Stirling coolers. Here we study the polarization entanglement among photon pairs from the biexciton-exciton cascade in GaAs quantum dots at temperatures up to 65 K. We observe entanglement degradation accompanied by changes in decay dynamics, which we ascribe to thermal population and depopulation of hot and dark states in addition to the four levels relevant for photon pair generation. Detailed calculations considering the presence and characteristics of the additional states and phonon-assisted transitions support the interpretation. We expect these results to guide the optimization of quantum dots as sources of highly entangled photons at elevated temperatures.
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Submitted 19 December, 2022;
originally announced December 2022.
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GaAs quantum dots grown by droplet etching epitaxy as quantum light sources
Authors:
Saimon Filipe Covre da Silva,
Gabriel Undeutsch,
Barbara Lehner,
Santanu Manna,
Tobias M. Krieger,
Marcus Reindl,
Christian Schimpf,
Rinaldo Trotta,
Armando Rastelli
Abstract:
This paper presents an overview and perspectives on the epitaxial growth and optical properties of GaAs quantum dots obtained with the droplet etching method as high-quality sources of quantum light. We illustrate the recent achievements regarding the generation of single photons and polarization entangled photon pairs and the use of these sources in applications of central importance in quantum c…
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This paper presents an overview and perspectives on the epitaxial growth and optical properties of GaAs quantum dots obtained with the droplet etching method as high-quality sources of quantum light. We illustrate the recent achievements regarding the generation of single photons and polarization entangled photon pairs and the use of these sources in applications of central importance in quantum communication, such as entanglement swap** and quantum key distribution.
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Submitted 3 September, 2021;
originally announced September 2021.
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Electronic Stop** of Slow Protons in Oxides: Scaling Properties
Authors:
D. Roth,
B. Bruckner,
G. Undeutsch,
V. Paneta,
A. I. Mardare,
C. L. McGahan,
M. Dosmailov,
J. I. Juaristi,
M. Alducin,
J. D. Pedarnig,
R. F. Haglund, Jr.,
D. Primetzhofer,
P. Bauer
Abstract:
Electronic stop** of slow protons in ZnO, VO2 (metal and semiconductor phases), HfO2, and Ta2O5 was investigated experimentally. As a comparison of the resulting stop** cross sections (SCS) to data for Al2O3 and SiO2 reveals, electronic stop** of slow protons does not correlate with electronic properties of the specific material such as band gap energies. Instead, the oxygen 2p states are de…
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Electronic stop** of slow protons in ZnO, VO2 (metal and semiconductor phases), HfO2, and Ta2O5 was investigated experimentally. As a comparison of the resulting stop** cross sections (SCS) to data for Al2O3 and SiO2 reveals, electronic stop** of slow protons does not correlate with electronic properties of the specific material such as band gap energies. Instead, the oxygen 2p states are decisive, as corroborated by density functional theory calculations of the electronic densities of states. Hence, at low ion velocities the SCS of an oxide primarily scales with its oxygen density.
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Submitted 22 October, 2017;
originally announced October 2017.
