-
Optimizing the Accuracy of Viscoelastic Characterization with AFM Force-Distance Experiments in the Time and Frequency Domains
Authors:
Marshall R. McCraw,
Berkin Uluutku,
Halen D. Solomon,
Megan S. Anderson,
Kausik Sarkar,
Santiago D. Solares
Abstract:
We demonstrate that the method of characterizing viscoelastic materials with Atomic Force Microscopy (AFM) by fitting analytical models to force-distance (FD) curves often yields conflicting and physically unrealistic results. Because this method involves specifying a constitutive time-dependent viscoelastic model and then fitting said model to the experimental data, we show that the inconsistenci…
▽ More
We demonstrate that the method of characterizing viscoelastic materials with Atomic Force Microscopy (AFM) by fitting analytical models to force-distance (FD) curves often yields conflicting and physically unrealistic results. Because this method involves specifying a constitutive time-dependent viscoelastic model and then fitting said model to the experimental data, we show that the inconsistencies in this method are due to a lack of sensitivity of the model with respect to its parameters. Using approaches from information theory, this lack of sensitivity can be interpreted as a narrowed distribution of information which is obtained from the experiment. Furthermore, the equivalent representation of the problem in the frequency domain, achieved via modified Fourier transformation, offers an enhanced sensitivity through a widening of the information distribution. Using these distributions, we then define restrictions for the timescales which can be reliably accessed in both the time and frequency domains, which leads to the conclusion that the analysis of experiments in the time domain can frequently lead to inaccuracies. Finally, we provide an example where we use these restrictions as a guide to optimally design an experiment to characterize a polydimethylsiloxane (PDMS) polymer sample.
△ Less
Submitted 2 October, 2022;
originally announced October 2022.
-
Direct Measurement of Storage and Loss Behavior in AFM Force-Distance Experiments Using the Modified Fourier Transformation
Authors:
Berkin Uluutku,
Marshall Richards McCraw,
Santiago D. Solares
Abstract:
Force-distance curve experiments are commonly performed in Atomic Force Microscopy (AFM) to obtain the viscoelastic characteristics of materials, such as the storage and loss moduli or compliances. The classic methods used to obtain these characteristics consist of fitting a viscoelastic material model to the experimentally obtained AFM data. Here, we demonstrate a new method that utilizes the mod…
▽ More
Force-distance curve experiments are commonly performed in Atomic Force Microscopy (AFM) to obtain the viscoelastic characteristics of materials, such as the storage and loss moduli or compliances. The classic methods used to obtain these characteristics consist of fitting a viscoelastic material model to the experimentally obtained AFM data. Here, we demonstrate a new method that utilizes the modified discrete Fourier transform to approximate the storage and loss behavior of a material directly from the data, without the need for a fit. Additionally, one may still fit a model to the resulting storage and loss behavior if a parameterized description of the material is desired. In contrast to fitting the data to a model chosen a priori, departing from a model-free description of the material's frequency behavior guides the selection of the model, such that the user may choose the one that is most appropriate for the particular material under study. To this end, we also include modified Fourier domain descriptions of commonly used viscoelastic models.
△ Less
Submitted 17 February, 2022;
originally announced February 2022.
-
Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale
Authors:
Rishi Maiti,
Md Abid Shahriar Rahman Saadi,
Rubab Amin,
Ongun Ozcelik,
Berkin Uluutku,
Chandraman Patil,
Can Suer,
Santiago Solares,
Volker J. Sorger
Abstract:
Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for exam…
▽ More
Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.
△ Less
Submitted 14 December, 2020;
originally announced December 2020.
