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Understanding the Humidity Sensitivity of Sensors with TCAD Simulations
Authors:
Ilona-Stefana Ninca,
Ingo Bloch,
Ben Bruers,
Vitaliy Fadeyev,
Xavi Fernandez-Tejero,
Callan Jessiman,
John Stakely Keller,
Christoph Thomas Klein,
Thomas Koffas,
Heiko Markus Lacker,
Peilin Li,
Christian Scharf,
Ezekiel Staats,
Miguel Ullan,
Yoshinobu Unno
Abstract:
The breakdown voltage of silicon sensors without special surface is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p test structures for different effective relative humidity. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Cu…
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The breakdown voltage of silicon sensors without special surface is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p test structures for different effective relative humidity. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Current Technique was used to measure charge transport near the surface in the breakdown region of the sensor. Using the measurements and simulations, the evolution of the electric field, carrier densities and avalanche breakdown in the periphery of p-bulk silicon sensors is presented.
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Submitted 14 March, 2024;
originally announced March 2024.
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Setups for eliminating static charge of the ATLAS18 strip sensors
Authors:
P. Federicova,
A. Affolder,
G. A. Beck,
A. J. Bevand,
Z. Chen,
I. Dawson,
A. Deshmukh,
A. Dowling,
V. Fadeyev,
J. Fernandez-Tejero,
A. Fournier,
N. Gonzalez,
L. Hommels,
C. Jessiman,
S. Kachiguin,
Ch. Klein,
T. Koffas,
J. Kroll,
V. Latonova,
M. Mikestikova,
P. S. Miyagawa,
S. O'Toole,
Q. Paddock,
L. Poley,
E. Staats
, et al. (5 additional authors not shown)
Abstract:
Construction of the new all-silicon Inner Tracker (ITk), developed by the ATLAS collaboration for the High Luminosity LHC, started in 2020 and is expected to continue till 2028. The ITk detector will include 18,000 highly segmented and radiation hard n+-in-p silicon strip sensors (ATLAS18), which are being manufactured by Hamamatsu Photonics. Mechanical and electrical characteristics of produced s…
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Construction of the new all-silicon Inner Tracker (ITk), developed by the ATLAS collaboration for the High Luminosity LHC, started in 2020 and is expected to continue till 2028. The ITk detector will include 18,000 highly segmented and radiation hard n+-in-p silicon strip sensors (ATLAS18), which are being manufactured by Hamamatsu Photonics. Mechanical and electrical characteristics of produced sensors are measured upon their delivery at several institutes participating in a complex Quality Control (QC) program. The QC tests performed on each individual sensor check the overall integrity and quality of the sensor. During the QC testing of production ATLAS18 strip sensors, an increased number of sensors that failed the electrical tests was observed. In particular, IV measurements indicated an early breakdown, while large areas containing several tens or hundreds of neighbouring strips with low interstrip isolation were identified by the Full strip tests, and leakage current instabilities were measured in a long-term leakage current stability setup. Moreover, a high surface electrostatic charge reaching a level of several hundreds of volts per inch was measured on a large number of sensors and on the plastic sheets, which mechanically protect these sensors in their paper envelopes. Accumulated data indicates a clear correlation between observed electrical failures and the sensor charge-up. To mitigate the above-described issues, the QC testing sites significantly modified the sensor handling procedures and introduced sensor recovery techniques based on irradiation of the sensor surface with UV light or application of intensive flows of ionized gas. In this presentation, we will describe the setups implemented by the QC testing sites to treat silicon strip sensors affected by static charge and evaluate the effectiveness of these setups in terms of improvement of the sensor performance.
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Submitted 18 December, 2023; v1 submitted 27 September, 2023;
originally announced September 2023.
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Map** the in-plane electric field inside irradiated diodes
Authors:
L. Poley,
A. J. Blue,
C. Buttar,
V. Cindro,
C. Darroch,
V. Fadeyev,
J. Fernandez-Tejero,
C. Fleta,
C. Helling,
C. Labitan,
I. Mandić,
S. N. Santpur,
D. Sperlich,
M. Ullán,
Y. Unno
Abstract:
A significant aspect of the Phase-II Upgrade of the ATLAS detector is the replacement of the current Inner Detector with the ATLAS Inner Tracker (ITk). The ATLAS ITk is an all-silicon detector consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker have been developed to withstand the high radiation environment in the ATLAS detector after the High Luminosity Upgrade of…
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A significant aspect of the Phase-II Upgrade of the ATLAS detector is the replacement of the current Inner Detector with the ATLAS Inner Tracker (ITk). The ATLAS ITk is an all-silicon detector consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker have been developed to withstand the high radiation environment in the ATLAS detector after the High Luminosity Upgrade of the Large Hadron Collider at CERN, which will significantly increase the rate of particle collisions and resulting particle tracks. During their operation in the ATLAS detector, sensors for the ITk strip tracker are expected to accumulate fluences up to 1.6 x 10^15 n_eq/cm^2 (including a safety factor of 1.5), which will significantly affect their performance. One characteristic of interest for highly irradiated sensors is the shape and homogeneity of the electric field inside its active area. For the results presented here, diodes with edge structures similar to full size ATLAS sensors were irradiated up to fluences comparable to those in the ATLAS ITk strip tracker and their electric fields mapped using a micro-focused X-ray beam (beam diameter 2x3 μm^2). This study shows the extension and shape of the electric field inside highly irradiated diodes over a range of applied bias voltages. Additionally, measurements of the outline of the depleted sensor areas allow a comparison of the measured leakage current for different fluences with expectations for the corresponding active areas.
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Submitted 29 March, 2021;
originally announced March 2021.
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The ABC130 barrel module prototy** programme for the ATLAS strip tracker
Authors:
Luise Poley,
Craig Sawyer,
Sagar Addepalli,
Anthony Affolder,
Bruno Allongue,
Phil Allport,
Eric Anderssen,
Francis Anghinolfi,
Jean-François Arguin,
Jan-Hendrik Arling,
Olivier Arnaez,
Nedaa Alexandra Asbah,
Joe Ashby,
Eleni Myrto Asimakopoulou,
Naim Bora Atlay,
Ludwig Bartsch,
Matthew J. Basso,
James Beacham,
Scott L. Beaupré,
Graham Beck,
Carl Beichert,
Laura Bergsten,
Jose Bernabeu,
Prajita Bhattarai,
Ingo Bloch
, et al. (224 additional authors not shown)
Abstract:
For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000…
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For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototy** programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-25) and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototy** program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.
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Submitted 7 September, 2020;
originally announced September 2020.
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Map** the depleted area of silicon diodes using a micro-focused X-ray beam
Authors:
Luise Poley,
Andrew Blue,
Ingo Bloch,
Craig Buttar,
Vitaliy Fadeyev,
Javier Fernandez-Tejero,
Celeste Fleta,
Johannes Hacker,
Carlos Lacasta Llacer,
Mercedes Miñano,
Martin Renzmann,
Edoardo Rossi,
Craig Sawyer,
Dennis Sperlich,
Martin Stegler,
Miguel Ullán,
Yoshinobu Unno
Abstract:
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -700 V to maintain a low noise and power dissipation. In…
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For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -700 V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several kΩ cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source. For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied. The findings showed that the electric field in each diode under investigation extended beyond its bias ring and reached the dicing edge.
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Submitted 27 March, 2019; v1 submitted 7 September, 2018;
originally announced September 2018.
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Prototy** of petalets for the Phase-II Upgrade of the silicon strip tracking detector of the ATLAS Experiment
Authors:
S. Kuehn,
V. Benítez,
J. Fernández-Tejero,
C. Fleta,
M. Lozano,
M. Ullán,
H. Lacker,
L. Rehnisch,
D. Sperlich,
D. Ariza,
I. Bloch,
S. Díez,
I. Gregor,
J. Keller,
K. Lohwasser,
L. Poley,
V. Prahl,
N. Zakharchuk,
M. Hauser,
K. Jakobs,
K. Mahboubi,
R. Mori,
U. Parzefall,
J. Bernabéu,
C. Lacasta
, et al. (9 additional authors not shown)
Abstract:
In the high luminosity era of the Large Hadron Collider, the HL-LHC, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The I…
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In the high luminosity era of the Large Hadron Collider, the HL-LHC, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototy** and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototy** plans for large structures.
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Submitted 5 November, 2017;
originally announced November 2017.
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Thermal and hydrodynamic studies for micro-channel cooling for large area silicon sensors in high energy physics experiments
Authors:
Nils Flaschel,
Dario Ariza,
Sergio Diez,
Marta Gerboles,
Ingrid-Maria Gregor,
Xavier Jorda,
Roser Mas,
David Quirion,
Kerstin Tackmann,
Miguel Ullan
Abstract:
Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today`s prospects of micro-fabricating silicon opens a door to a more direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. In this paper, we are investigating micr…
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Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today`s prospects of micro-fabricating silicon opens a door to a more direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. In this paper, we are investigating micro-channel cooling as a candidate for a future cooling system for silicon detectors in a generic research and development approach. The work presented in this paper includes the production and the hydrodynamic and thermal testing of a micro-channel equipped prototype optimized to achieve a homogeneous flow distribution. Furthermore, the device was simulated using finite element methods.
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Submitted 9 May, 2017; v1 submitted 16 November, 2016;
originally announced November 2016.
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Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam
Authors:
Luise Poley,
Andrew Blue,
Richard Bates,
Ingo Bloch,
Sergio Diez,
Javier Fernandez-Tejero,
Celeste Fleta,
Bruce Gallop,
Ashley Greenall,
Ingrid-Maria Gregor,
Kazuhiko Hara,
Yoichi Ikegami,
Carlos Lacasta,
Kristin Lohwasser,
Dzmitry Maneuski,
Sebastian Nagorski,
Ian Pape,
Peter W. Phillips,
Dennis Sperlich,
Kawal Sawhney,
Urmila Soldevila,
Miguel Ullan,
Yoshinobu Unno,
Matt Warren
Abstract:
The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6*10^34 cm^-2 s^-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1*10^16 1 MeV n_eq/cm^2 . In order to cope wi…
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The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6*10^34 cm^-2 s^-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1*10^16 1 MeV n_eq/cm^2 . In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 um FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 Um thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 Um thick full size radial (end-cap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 um strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.
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Submitted 1 July, 2016; v1 submitted 15 March, 2016;
originally announced March 2016.
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Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Tracker
Authors:
Pablo Fernandez-Martinez,
Miguel Ullan,
David Flores,
Salvador Hidalgo,
David Quirion,
David Lynn
Abstract:
This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker. The optimization of the device characteristics is performed by 2D and 3D TCAD simulations. Special attention has been paid to the on-resistance and the switch-off and breakd…
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This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker. The optimization of the device characteristics is performed by 2D and 3D TCAD simulations. Special attention has been paid to the on-resistance and the switch-off and breakdown voltages to meet the specific requirements of the system. In addition, a set of parameter values has been extracted from the simulated curves to implement a SPICE model of the proposed V-JFET transistor. As these devices are expected to operate under very high radiation conditions during the whole experiment life-time, a study of the radiation damage effects and the expected degradation on the device performance is also presented at the end of the paper.
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Submitted 2 November, 2015;
originally announced November 2015.
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Around the Clock Observations of the Q0957+561 A,B Gravitationally Lensed Quasar II: Results for the second observing season
Authors:
Wesley N. Colley,
Rudolph E. Schild,
Cristina Abajas,
David Alcalde,
Zeki Aslan,
Ilfan Bikmaev,
Vahram Chavushyan,
Luis Chinarro,
Jean-Philippe Cournoyer,
Richard Crowe,
Vladimir Dudinov,
Anna Kathinka,
Dalland Evans,
Young-Beom Jeon,
Luis J. Goicoechea,
Orhan Golbasi,
Irek Khamitov,
Kjetil Kjernsmo,
Hyun Ju Lee,
Jonghwan Lee,
Ki Won Lee,
Myung Gyoon Lee,
Omar Lopez-Cruz,
Evencio Mediavilla,
Anthony F. J. Moffatt
, et al. (13 additional authors not shown)
Abstract:
We report on an observing campaign in March 2001 to monitor the brightness of the later arriving Q0957+561 B image in order to compare with the previously published brightness observations of the (first arriving) A image. The 12 participating observatories provided 3543 image frames which we have analyzed for brightness fluctuations. From our classical methods for time delay determination, we fi…
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We report on an observing campaign in March 2001 to monitor the brightness of the later arriving Q0957+561 B image in order to compare with the previously published brightness observations of the (first arriving) A image. The 12 participating observatories provided 3543 image frames which we have analyzed for brightness fluctuations. From our classical methods for time delay determination, we find a 417.09 +/- 0.07 day time delay which should be free of effects due to incomplete sampling. During the campaign period, the quasar brightness was relatively constant and only small fluctuations were found; we compare the structure function for the new data with structure function estimates for the 1995--6 epoch, and show that the structure function is statistically non-stationary. We also examine the data for any evidence of correlated fluctuations at zero lag. We discuss the limits to our ability to measure the cosmological time delay if the quasar's emitting surface is time resolved, as seems likely.
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Submitted 17 October, 2002;
originally announced October 2002.
