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A Survey of COVID-19 Misinformation: Datasets, Detection Techniques and Open Issues
Authors:
A. R. Sana Ullah,
Anupam Das,
Anik Das,
Muhammad Ashad Kabir,
Kai Shu
Abstract:
Misinformation during pandemic situations like COVID-19 is growing rapidly on social media and other platforms. This expeditious growth of misinformation creates adverse effects on the people living in the society. Researchers are trying their best to mitigate this problem using different approaches based on Machine Learning (ML), Deep Learning (DL), and Natural Language Processing (NLP). This sur…
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Misinformation during pandemic situations like COVID-19 is growing rapidly on social media and other platforms. This expeditious growth of misinformation creates adverse effects on the people living in the society. Researchers are trying their best to mitigate this problem using different approaches based on Machine Learning (ML), Deep Learning (DL), and Natural Language Processing (NLP). This survey aims to study different approaches of misinformation detection on COVID-19 in recent literature to help the researchers in this domain. More specifically, we review the different methods used for COVID-19 misinformation detection in their research with an overview of data pre-processing and feature extraction methods to get a better understanding of their work. We also summarize the existing datasets which can be used for further research. Finally, we discuss the limitations of the existing methods and highlight some potential future research directions along this dimension to combat the spreading of misinformation during a pandemic.
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Submitted 24 October, 2021; v1 submitted 2 October, 2021;
originally announced October 2021.
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Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
Authors:
J. G. Gluschke,
J. Seidl,
A. M. Burke,
R. W. Lyttleton,
D. J. Carrad,
A. R. Ullah,
S. Fahlvik Svensson,
S. Lehmann,
H. Linke,
A. P. Micolich
Abstract:
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control…
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We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300 nm, 200 nm, and 150 nm gate length. Our method enables us to achieve sub-threshold swings as low as 38 mV/dec at 77 K for a 150 nm gate length.
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Submitted 8 October, 2018;
originally announced October 2018.
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p-GaAs nanowire MESFETs with near-thermal limit gating
Authors:
A. R. Ullah,
F. Meyer,
J. G. Gluschke,
S. Naureen,
P. Caroff,
P. Krogstrup,
J. Nygard,
A. P. Micolich
Abstract:
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trap** effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal-semiconductor field-effect transistor (MESFET) that eliminates the need for a gate insulator by exploiting the Schottky barrier at the metal-GaAs interface. Our d…
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Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trap** effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal-semiconductor field-effect transistor (MESFET) that eliminates the need for a gate insulator by exploiting the Schottky barrier at the metal-GaAs interface. Our device beats the best-performing p-GaSb nanowire metal-oxide-semiconductor field effect transistor (MOSFET), giving a typical sub-threshold swing of 62 mV/dec, within 4% of the thermal limit, on-off ratio $\sim 10^{5}$, on-resistance ~700 k$Ω$, contact resistance ~30 k$Ω$, peak transconductance 1.2 $μ$S/$μ$m and high-fidelity ac operation at frequencies up to 10 kHz. The device consists of a GaAs nanowire with an undoped core and heavily Be-doped shell. We carefully etch back the nanowire at the gate locations to obtain Schottky-barrier insulated gates whilst leaving the doped shell intact at the contacts to obtain low contact resistance. Our device opens a path to all-GaAs nanowire MESFET complementary circuits with simplified fabrication and improved performance.
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Submitted 27 September, 2018;
originally announced September 2018.
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Near-thermal limit gating in heavily-doped III-V semiconductor nanowires using polymer electrolytes
Authors:
A. R. Ullah,
D. J. Carrad,
P. Krogstrup,
J. Nygård,
A. P. Micolich
Abstract:
Do** is a common route to reducing nanowire transistor on-resistance but has limits. High do** level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be do** in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of sub-threshold swing and…
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Do** is a common route to reducing nanowire transistor on-resistance but has limits. High do** level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be do** in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of sub-threshold swing and contact resistance that surpasses the best existing p-type nanowire MOSFETs. Our sub-threshold swing of 75 mV/dec is within 25% of the room-temperature thermal limit and comparable with n-InP and n-GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.
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Submitted 6 February, 2018; v1 submitted 18 October, 2017;
originally announced October 2017.
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The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors
Authors:
A. R. Ullah,
H. J. Joyce,
H. H. Tan,
C. Jagadish,
A. P. Micolich
Abstract:
We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N$_2$ and O$_2$, and N$_2$ bubbled through liquid H$_2$O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by…
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We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N$_2$ and O$_2$, and N$_2$ bubbled through liquid H$_2$O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires.
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Submitted 1 October, 2017; v1 submitted 14 June, 2017;
originally announced June 2017.
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Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry
Authors:
D. J. Carrad,
A. B. Mostert,
A. R. Ullah,
A. M. Burke,
H. J. Joyce,
H. H. Tan,
C. Jagadish,
P. Krogstrup,
J. Nygård,
P. Meredith,
A. P. Micolich
Abstract:
A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials types -- electronic signals in inorganic semiconductors and ionic/protonic signals in organic or bio-organic poly…
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A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials types -- electronic signals in inorganic semiconductors and ionic/protonic signals in organic or bio-organic polymers, gels or electrolytes. Here we demonstrate a new class of organic-inorganic transducing interface featuring semiconducting nanowires electrostatically gated using a solid proton-transporting hygroscopic polymer. This model platform allows us to study the basic transducing mechanisms as well as deliver high fidelity signal conversion by tap** into and drawing together the best candidates from traditionally disparate realms of electronic materials research. By combining complementary n- and p-type transducers we demonstrate functional logic with significant potential for scaling towards high-density integrated bioelectronic circuitry.
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Submitted 29 April, 2017;
originally announced May 2017.
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Towards low-dimensional hole systems in Be-doped GaAs nanowires
Authors:
A. R. Ullah,
J. G. Gluschke,
P. Krogstrup,
C. B. Sørensen,
J. Nygård,
A. P. Micolich
Abstract:
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and 1D hole systems with strong spin-orbit effects, motivating our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts…
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GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and 1D hole systems with strong spin-orbit effects, motivating our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts and patterned local gate electrodes towards making nanowire-based quantum hole devices. We report on nanowire transistors with traditional substrate back-gates and EBL-defined metal/oxide top-gates produced using GaAs nanowires with three different Be-do** densities and various AuBe contact processing recipes. We show that contact annealing only brings small improvements for the moderately-doped devices under conditions of lower anneal temperature and short anneal time. We only obtain good transistor performance for moderate do**, with conduction freezing out at low temperature for lowly-doped nanowires and inability to reach a clear off-state under gating for the highly-doped nanowires. Our best devices give on-state conductivity 95 nS, off-state conductivity 2 pS, on-off ratio ~$10^{4}$, and sub-threshold slope 50 mV/dec at T = 4 K. Lastly, we made a device featuring a moderately-doped nanowire with annealed contacts and multiple top-gates. Top-gate sweeps show a plateau in the sub-threshold region that is reproducible in separate cool-downs and indicative of possible conductance quantization highlighting the potential for future quantum device studies in this material system.
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Submitted 12 April, 2017;
originally announced April 2017.
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Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
Authors:
A. R. Ullah,
H. J. Joyce,
A. M. Burke,
H. H. Tan,
C. Jagadish,
A. P. Micolich
Abstract:
We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.
We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.
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Submitted 18 June, 2013;
originally announced June 2013.
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The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs
Authors:
A. R. Ullah,
A. P. Micolich,
J. W. Cochrane,
A. R. Hamilton
Abstract:
There has recently been significant interest in rubrene single-crystals grown using physical vapour transport techniques due to their application in high-mobility organic field-effect transistor (OFET) devices. Despite numerous studies of the electrical properties of such crystals, there has only been one study to date focussing on characterising and optimising the crystal growth as a function o…
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There has recently been significant interest in rubrene single-crystals grown using physical vapour transport techniques due to their application in high-mobility organic field-effect transistor (OFET) devices. Despite numerous studies of the electrical properties of such crystals, there has only been one study to date focussing on characterising and optimising the crystal growth as a function of the relevant growth parameters. Here we present a study of the dependence of the yield of useful crystals (defined as crystals with at least one dimension of order 1 mm) on the temperature and volume flow of carrier gas used in the physical vapour growth process.
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Submitted 11 November, 2007;
originally announced November 2007.
