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Local step-flow dynamics in thin film growth with desorption
Authors:
Xiaozhi Zhang,
Jeffrey G. Ulbrandt,
Peco Myint,
Andrei Fluerasu,
Lutz Wiegart,
Yugang Zhang,
Christie Nelson,
Karl F. Ludwig,
Randall L. Headrick
Abstract:
Desorption of deposited species plays a role in determining the evolution of surface morphology during crystal growth when the desorption time constant is short compared to the time to diffuse to a defect site, step edge or kink. However, experiments to directly test the predictions of these effects are lacking. Novel techniques such as \emph{in-situ} coherent X-ray scattering can provide signific…
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Desorption of deposited species plays a role in determining the evolution of surface morphology during crystal growth when the desorption time constant is short compared to the time to diffuse to a defect site, step edge or kink. However, experiments to directly test the predictions of these effects are lacking. Novel techniques such as \emph{in-situ} coherent X-ray scattering can provide significant new information. Herein we present X-ray Photon Correlation Spectroscopy (XPCS) measurements during diindenoperylene (DIP) vapor deposition on thermally oxidized silicon surfaces. DIP forms a nearly complete two-dimensional first layer over the range of temperatures studied (40 - 120 $^{\circ}$C), followed by mounded growth during subsequent deposition. Local step flow within mounds was observed, and we find that there was a terrace-length-dependent behavior of the step edge dynamics. This led to unstable growth with rapid roughening ($β>0.5$) and deviation from a symmetric error-function-like height profile. At high temperatures, the grooves between the mounds tend to close up leading to nearly flat polycrystalline films. Numerical analysis based on a 1 + 1 dimensional model suggests that terrace-length dependent desorption of deposited ad-molecules is an essential cause of the step dynamics, and it influences the morphology evolution.
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Submitted 29 May, 2023;
originally announced May 2023.
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Early Stage Growth of Amorphous Thin Film: Average Kinetics, Nanoscale Dynamics and Pressure Dependence
Authors:
Chenyu Wang,
Karl F. Ludwig,
Christa Wagenbach,
Meliha G. Rainville,
Suresh Narayanan,
Hua Zhou,
Jeffrey G. Ulbrandt,
Randall L. Headrick
Abstract:
We used the Coherent Grazing Incidence Small Angle X-Ray Scattering (Co-GISAXS) technique to study the average kinetics and nanoscale dynamics during early-stage a-WSi$_2$ sputter deposition. The kinetic and dynamic properties are examined as a function of pressure, which is known to be a critical factor in determining final surface roughness. Surface growth kinetics and dynamics are characterized…
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We used the Coherent Grazing Incidence Small Angle X-Ray Scattering (Co-GISAXS) technique to study the average kinetics and nanoscale dynamics during early-stage a-WSi$_2$ sputter deposition. The kinetic and dynamic properties are examined as a function of pressure, which is known to be a critical factor in determining final surface roughness. Surface growth kinetics and dynamics are characterized by time parameters extracted from the height-height structure factor and correlation functions. The roughness at a given length scale reaches a maximum before relaxing down to a steady state. The lateral length scale dependence and pressure dependence are then compared among measured kinetics and dynamics time parameters. Surfaces grown at lower pressures are smoother, leading to longer correlation times. The time to reach a dynamic steady state and a kinetic steady state show contrasting pressure dependence. A dynamic steady state is reached earlier than the kinetic steady state at high pressure. A more random deposition direction and lower kinetic energy at higher pressures can explain these phenomena, along with the hypothesis that larger nanoclusters form in vapor before arriving at the surface. A continuum model is applied to simulate the overall behavior with mixed success.
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Submitted 9 December, 2021; v1 submitted 28 November, 2021;
originally announced November 2021.
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Role of ferroelectric polarization during growth of highly strained ferroelectrics revealed by in-situ x-ray diffraction
Authors:
Rui Liu,
Jeffrey G. Ulbrandt,
Hsiang-Chun Hsing,
Anna Gura,
Benjamin Bein,
Alec Sun,
Charles Pan,
Giulia Bertino,
Amanda Lai,
Kaize Cheng,
Eli Doyle,
Kenneth Evans-Lutterodt,
Randall L. Headrick,
Matthew Dawber
Abstract:
Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure, but we show here that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical prope…
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Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure, but we show here that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical properties and domain structures. We have studied this effect in detail by focusing on the properties of BaTiO$_{3}$ thin films grown on very thin layers of PbTiO$_{3}$ using a combination of x-ray diffraction, piezoforce microscopy, electrical characterization and rapid in-situ x-ray diffraction reciprocal space maps during the growth using synchrotron radiation. Using a simple model we show that the changes in growth are driven by the energy cost for the top material to sustain the polarization imposed upon it by the underlying layer, and these effects may be expected to occur in other multilayer systems where polarization is present during growth. Our research motivates the concept of polarization engineering during the growth process as a new and complementary approach to strain engineering.
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Submitted 26 September, 2019;
originally announced September 2019.
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Homoepitaxial growth of SrTiO$_3$ by Pulsed Laser Deposition: energetic vs thermal growth
Authors:
Jeffrey G. Ulbrandt,
Xiaozhi Zhang,
Rui Liu,
Kenneth Evans-Lutterodt,
Matthew Dawber,
Randall L. Headrick
Abstract:
Pulsed Laser Deposition (PLD) is widely used to grow epitaxial thin films of quantum materials such as complex oxides. Here, we use in-situ X-ray scattering to study homoepitaxy of SrTiO$_3$ by energetic (e-) and thermalized (th-) PLD. We find that e-PLD suppresses the lateral growth of two-dimensional islands, which suggests that energetic particles break up smaller islands. Fast interlayer trans…
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Pulsed Laser Deposition (PLD) is widely used to grow epitaxial thin films of quantum materials such as complex oxides. Here, we use in-situ X-ray scattering to study homoepitaxy of SrTiO$_3$ by energetic (e-) and thermalized (th-) PLD. We find that e-PLD suppresses the lateral growth of two-dimensional islands, which suggests that energetic particles break up smaller islands. Fast interlayer transport occurs for both e-PLD and th-PLD, implying a process operating on sub-microsecond timescales that doesn't depend strongly on the kinetic energy of the incident particles.
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Submitted 18 July, 2019;
originally announced July 2019.
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Coherent X-ray measurement of step-flow propagation during growth on polycrystalline thin film surfaces
Authors:
Randall L. Headrick,
Jeffrey G. Ulbrandt,
Peco Myint,
**g Wan,
Yang Li,
Andrei Fluerasu,
Yugang Zhang,
Lutz Wiegart,
Karl F. Ludwig, Jr
Abstract:
The properties of artificially grown thin films are strongly affected by surface processes during growth. Coherent X-rays provide an approach to better understand such processes and fluctuations far from equilibrium. Here we report results for vacuum deposition of C$_{60}$ on a graphene-coated surface investigated with X-ray Photon Correlation Spectroscopy in surface-sensitive conditions. Step-flo…
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The properties of artificially grown thin films are strongly affected by surface processes during growth. Coherent X-rays provide an approach to better understand such processes and fluctuations far from equilibrium. Here we report results for vacuum deposition of C$_{60}$ on a graphene-coated surface investigated with X-ray Photon Correlation Spectroscopy in surface-sensitive conditions. Step-flow is observed through measurement of the step-edge velocity in the late stages of growth after crystalline mounds have formed. We show that the step-edge velocity is coupled to the terrace length, and that there is a variation in the velocity from larger step spacing at the center of crystalline mounds to closely-spaced, more slowly propagating steps at their edges. The results extend theories of surface growth, since the behavior is consistent with surface evolution driven by processes that include surface diffusion, the motion of step-edges, and attachment at step edges with significant step-edge barriers.
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Submitted 5 May, 2019; v1 submitted 26 October, 2018;
originally announced October 2018.
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Ballistic Deposition of Nanoclusters
Authors:
Jeffrey G. Ulbrandt,
Yang Li,
Randall L. Headrick
Abstract:
Nanoporous thin-films are an important class of materials, offering a way to observe fundamental surface and bulk processes with particles larger than individual atoms, but small enough to interact significantly with each other through mechanisms such as stress and surface mobility. In-Situ X-ray Reflectivity and Grazing Incidence Small Angle X-Ray Scattering (GISAXS) were used to monitor thin-fil…
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Nanoporous thin-films are an important class of materials, offering a way to observe fundamental surface and bulk processes with particles larger than individual atoms, but small enough to interact significantly with each other through mechanisms such as stress and surface mobility. In-Situ X-ray Reflectivity and Grazing Incidence Small Angle X-Ray Scattering (GISAXS) were used to monitor thin-films grown from Tungsten Disilicide (WSi$_2$) and Copper (Cu) nanoclusters. The nanoclusters ranged in size from 2 nm to 6 nm diameter and were made by high-pressure magnetron sputtering via plasma-gas condensation. X-Ray Reflectivity (XRR) measurements of the film at various stages of growth reveal that the resulting films exhibit very low density, approaching 15% of bulk density. This is consistent with a simple off-lattice ballistic deposition model where particles stick at the point of first contact without further restructuring. Furthermore, there is little merging or sintering of the clusters in these films.
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Submitted 19 March, 2016;
originally announced March 2016.
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Transient phases during fast crystallization of organic thin films from solution
Authors:
**g Wan,
Yang Li,
Jeffrey G. Ulbrandt,
Detlef-M. Smilgies,
Jonathan Hollin,
Adam C. Whalley,
Randall L. Headrick
Abstract:
We report an in-situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C$_8$-BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to $\approx$93$^\circ$C. The layered smectic liquid-crystalline phase of C$_8$-BTBT initially forms…
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We report an in-situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C$_8$-BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to $\approx$93$^\circ$C. The layered smectic liquid-crystalline phase of C$_8$-BTBT initially forms and preceedes inter-layer ordering, followed by a transient crystalline phase for temperature $>$60$^\circ$C, and ultimately the stable phase. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility during high-speed processing. For high writing speed (25 mm/s) mobility up to 3.0 cm$^2$/V-s has been observed.
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Submitted 30 September, 2015;
originally announced September 2015.
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Co-GISAXS as a New Technique to Investigate Surface Growth Dynamics
Authors:
Meliha G. Rainville,
Christa Hoskin,
Jeffrey G. Ulbrandt,
Suresh Narayanan,
Alec R. Sandy,
Hua Zhou,
Randall L. Headrick,
Karl F. Ludwig Jr
Abstract:
Detailed quantitative measurement of surface dynamics during thin film growth is a major experimental challenge. Here X-ray Photon Correlation Spectroscopy with coherent hard X-rays is used in a Grazing-Incidence Small-Angle X-ray Scattering (i.e. Co-GISAXS) geometry as a new tool to investigate nanoscale surface dynamics during sputter deposition of a-Si and a-WSi$_2$ thin films. For both films,…
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Detailed quantitative measurement of surface dynamics during thin film growth is a major experimental challenge. Here X-ray Photon Correlation Spectroscopy with coherent hard X-rays is used in a Grazing-Incidence Small-Angle X-ray Scattering (i.e. Co-GISAXS) geometry as a new tool to investigate nanoscale surface dynamics during sputter deposition of a-Si and a-WSi$_2$ thin films. For both films, kinetic roughening during surface growth reaches a dynamic steady state at late times in which the intensity autocorrelation function $g_2$(q,t) becomes stationary. The $g_2$(q,t) functions exhibit compressed exponential behavior at all wavenumbers studied. The overall dynamics are complex, but the most surface sensitive sections of the structure factor and correlation time exhibit power law behaviors consistent with dynamical scaling.
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Submitted 3 August, 2015;
originally announced August 2015.
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Using coherent X-rays to directly measure the propagation velocity of defects during thin film deposition
Authors:
Jeffrey G. Ulbrandt,
Meliha G. Rainville,
Christa Hoskin,
Suresh Narayanan,
Alec R. Sandy,
Hua Zhou,
Karl F. Ludwig Jr.,
Randall L. Headrick
Abstract:
The properties of artificially grown thin films are often strongly affected by the dynamic relationship between surface growth processes and subsurface structure. Coherent mixing of X-ray signals promises to provide an approach to better understand such processes. Here, we demonstrate the continuously variable mixing of surface and bulk scattering signals during real-time studies of sputter deposi…
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The properties of artificially grown thin films are often strongly affected by the dynamic relationship between surface growth processes and subsurface structure. Coherent mixing of X-ray signals promises to provide an approach to better understand such processes. Here, we demonstrate the continuously variable mixing of surface and bulk scattering signals during real-time studies of sputter deposition of a-Si and a-WiS2 films by controlling the X-ray penetration and escape depths in coherent grazing incidence small angle X-ray scattering (Co-GISAXS). Under conditions where the X-ray signal comes from both the growth surface and the thin film bulk, oscillations in temporal correlations arise from coherent interference between scattering from stationary bulk features and from the advancing surface. We also observe evidence that elongated bulk features propagate upward at the same velocity as the surface. Additionally, a highly surface sensitive mode is demonstrated that can access the surface dynamics independently of the subsurface structure.
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Submitted 30 September, 2015; v1 submitted 13 July, 2015;
originally announced July 2015.
