-
A local view of the laser induced magnetic domain dynamics in CoPd stripe domains at the picosecond time scale
Authors:
V. López-Flores,
M. -A. Mawass,
J. Herrero-Albillos,
A. A. Uenal,
S. Valencia,
F. Kronast,
C. Boeglin
Abstract:
The dynamic of the magnetic structure in a well ordered ferromagnetic CoPd stripe domain pattern has been investigated upon excitation by femtosecond infrared laser pulses. Time-resolved X-ray magnetic circular dichroism in photoemission electron microscopy (TR-XMCD-PEEM) is used to perform real space magnetic imaging with 100 ps time resolution in order to show local transformations of the domain…
▽ More
The dynamic of the magnetic structure in a well ordered ferromagnetic CoPd stripe domain pattern has been investigated upon excitation by femtosecond infrared laser pulses. Time-resolved X-ray magnetic circular dichroism in photoemission electron microscopy (TR-XMCD-PEEM) is used to perform real space magnetic imaging with 100 ps time resolution in order to show local transformations of the domains structures. Using the time resolution of the synchrotron radiation facility of the Helmholtz-Zentrum Berlin, we are able to image the transient magnetic domains in a repetitive pump and probe experiment. In this work, we study the reversible and irreversible transformations of the excited magnetic stripe domains as function of the laser fluence. Our results can be explained by thermal contributions, reducing the XMCD amplitude in each stripe domain below a threshold fluence of 12 mJ/cm2. Above this threshold fluence, irreversible transformations of the magnetic domains are observed. Static XMCD-PEEM images reveal the new partially ordered stripe domain structures characterized by a new local magnetic domain distribution showing an organized pattern at the micrometer scale. This new arrangement is attributed to the recovery of the magnetic anisotropy during heat dissipation under an Oersted field.
△ Less
Submitted 30 June, 2020; v1 submitted 18 March, 2020;
originally announced March 2020.
-
Switching on superferromagnetism
Authors:
A. Arora,
L. C. Phillips,
P. Nukala,
M. Ben Hassine,
A. A. Ünal,
B. Dkhil,
Ll. Balcells,
O. Iglesias,
A. Barthélémy,
F. Kronast,
M. Bibes,
S. Valencia
Abstract:
Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric effects, the possibility of switching on and off long-range ferromagnetic ordering close to room temperature stands out. Its binary character opens up the avenu…
▽ More
Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric effects, the possibility of switching on and off long-range ferromagnetic ordering close to room temperature stands out. Its binary character opens up the avenue for its implementation in magnetoelectric data storage devices. Here we show the possibility to locally switch on superferromagnetism in a wedge-shaped polycrystalline Fe thin film deposited on top of a ferroelectric and ferroelastic BaTiO3 substrate. A superparamagnetic to superferromagnetic transition is observed for confined regions for which a voltage applied to the ferroelectric substrate induces a sizable strain. We argue that electric-field-induced changes of magnetic anisotropy lead to an increase of the critical temperature separating the two regimes so that superparamagnetic regions develop collective long-range superferromagnetic behavior.
△ Less
Submitted 12 February, 2019; v1 submitted 10 February, 2019;
originally announced February 2019.
-
Strain-gradient-induced magnetic anisotropy in straight-stripe mixed-phase bismuth ferrites: An insight into flexomagnetic phenomenon
Authors:
** Hong Lee,
Kwang-Eun Kim,
Byung-Kweon Jang,
Ahmet A. Ünal,
Sergio Valencia,
Florian Kronast,
Kyung-Tae Ko,
Stefan Kowarik,
Jan Seidel,
Chan-Ho Yang
Abstract:
Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin configurations. Electrically-controllable strain gradient can become a key parameter to tune the antiferromagnetic states of multiferroic materials. We have discover…
▽ More
Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin configurations. Electrically-controllable strain gradient can become a key parameter to tune the antiferromagnetic states of multiferroic materials. We have discovered a correlation between an electrically-written straight-stripe mixed-phase boundary and an in-plane antiferromagnetic spin axis in highly-elongated La-5%-doped BiFeO$_{3}$ thin films by performing polarization-dependent photoemission electron microscopy in conjunction with cluster model calculations. Model Hamiltonian calculation for the single-ion anisotropy including the spin-orbit interaction has been performed to figure out the physical origin of the link between the strain gradient present in the mixed phase area and its antiferromagnetic spin axis. Our findings enable estimation of the strain-gradient-induced magnetic anisotropy energy per Fe ion at around 5$\times$10$^{-12}$ eV m, and provide a new pathway towards an electric-field-induced 90$^{\circ}$ rotation of antiferromagnetic spin axis at room temperature by flexomagnetism.
△ Less
Submitted 21 April, 2017;
originally announced April 2017.
-
Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi$_{1-x}$Mn$_x)_2$Se$_3$
Authors:
J. Sánchez-Barriga,
A. Varykhalov,
G. Springholz,
H. Steiner,
R. Kirchschlager,
G. Bauer,
O. Caha,
E. Schierle,
E. Weschke,
A. A. Ünal,
S. Valencia,
M. Dunst,
J. Braun,
H. Ebert,
J. Minár,
E. Golias,
L. V. Yashina,
A. Ney,
V. Holý,
O. Rader
Abstract:
Magnetic do** is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi$_{1-x}$Mn$_{x}$)$_{2}$Se$_{3}$ is a prototypical magnetic topological insulator with a pronounced surface band gap of $\sim100$ meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surf…
▽ More
Magnetic do** is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi$_{1-x}$Mn$_{x}$)$_{2}$Se$_{3}$ is a prototypical magnetic topological insulator with a pronounced surface band gap of $\sim100$ meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surface nor to the local magnetic moment of the Mn, making the system unsuitable for realizing the novel phases. We further show that Mn do** does not affect the inverted bulk band gap and the system remains topologically nontrivial. We suggest that strong resonant scattering processes cause the gap at the Dirac point and support this by the observation of in-gap states using resonant photoemission. Our findings establish a novel mechanism for gap opening in topological surface states which challenges the currently known conditions for topological protection.
△ Less
Submitted 9 March, 2016;
originally announced March 2016.
-
2D layered transport properties from topological insulator Bi$_2$Se$_3$ single crystals and micro flakes
Authors:
Olivio Chiatti,
Christian Riha,
Dominic Lawrenz,
Marco Busch,
Srujana Dusari,
Jaime Sánchez-Barriga,
Anna Mogilatenko,
Lada V. Yashina,
Sergio Valencia,
Akin A. Ünal,
Oliver Rader,
Saskia F. Fischer
Abstract:
Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities ($\sim10^{19}$ cm$^{-3}$) were reported, which can be related…
▽ More
Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities ($\sim10^{19}$ cm$^{-3}$) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi$_2$Se$_3$ single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability.
△ Less
Submitted 6 June, 2016; v1 submitted 4 December, 2015;
originally announced December 2015.
-
Ferrimagnetic nanostructures for magnetic memory bits
Authors:
A. A. Ünal,
S. Valencia,
D. Marchenko,
K. J. Merazzo,
F. Radu,
M. Vázquez,
J. Sánchez-Barriga
Abstract:
Increasing the magnetic data recording density requires reducing the size of the individual memory elements of a recording layer as well as employing magnetic materials with temperature-dependent functionalities. Therefore, it is predicted that the near future of magnetic data storage technology involves a combination of energy-assisted recording on nanometer-scale magnetic media. We present the p…
▽ More
Increasing the magnetic data recording density requires reducing the size of the individual memory elements of a recording layer as well as employing magnetic materials with temperature-dependent functionalities. Therefore, it is predicted that the near future of magnetic data storage technology involves a combination of energy-assisted recording on nanometer-scale magnetic media. We present the potential of heat-assisted magnetic recording on a patterned sample; a ferrimagnetic alloy composed of a rare earth and a transition metal, DyCo$_5$, which is grown on a hexagonal-ordered nanohole array membrane. The magnetization of the antidot array sample is out-of-plane oriented at room temperature and rotates towards in-plane upon heating above its spin-reorientation temperature (T$_R$) of ~350 K, just above room temperature. Upon cooling back to room temperature (below T$_R$), we observe a well-defined and unexpected in-plane magnetic domain configuration modulating with ~45 nm. We discuss the underlying mechanisms giving rise to this behavior by comparing the magnetic properties of the patterned sample with the ones of its extended thin film counterpart. Our results pave the way for novel applications of ferrimagnetic antidot arrays of superior functionality in magnetic nano-devices near room temperature.
△ Less
Submitted 17 October, 2015;
originally announced October 2015.
-
Local electrical control of magnetic order and orientation by ferroelastic domain arrangements just above room temperature
Authors:
L. C. Phillips,
Ryan O. Cherifi,
Viktoria Ivanovskaya,
Alberto Zobelli,
Ingrid C. Infante,
Eric Jacquet,
Nicolas Guiblin,
Ahmet A. Unal,
Florian Kronast,
Brahim Dkhil,
Agnes Barthelemy,
Manuel Bibes,
Sergio Valencia
Abstract:
Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical control of macroscopic magnetic properties including magnetization and coercive field. Here we show that ferroelastic domains can be used to control both magnetic…
▽ More
Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical control of macroscopic magnetic properties including magnetization and coercive field. Here we show that ferroelastic domains can be used to control both magnetic order and magnetization direction at the nanoscale with a voltage. We use element-specific x-ray imaging to map the magnetic domains as a function of temperature and voltage in epitaxial FeRh on ferroelastic BaTiO3. Exploiting the nanoscale phase-separation of FeRh, we locally interconvert between ferromagnetism and antiferromagnetism with a small electric field just above room temperature. Our results emphasize the importance of nanoscale ferroic domain structure to achieve enhanced coupling in artificial multiferroics.
△ Less
Submitted 11 December, 2014;
originally announced December 2014.
-
Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
Authors:
Hui Fang,
Corsin Battaglia,
Carlo Carraro,
Slavomir Nemsak,
Burak Ozdol,
Jeong Seuk Kang,
Hans A. Bechtel,
Sujay B. Desai,
Florian Kronast,
Ahmet A. Unal,
Giuseppina Conti,
Catherine Conlon,
Gunnar K. Palsson,
Michael C. Martin,
Andrew M. Minor,
Charles S. Fadley,
Eli Yablonovitch,
Roya Maboudian,
Ali Javey
Abstract:
Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures,…
▽ More
Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures, but in principle with atomically sharp interfaces, no interdiffusion of atoms, digitally controlled layered components and no lattice parameter constraints. Nonetheless, the optoelectronic behavior of this new type of van der Waals (vdW) semiconductor heterostructure is unknown at the single-layer limit. Specifically, it is experimentally unknown whether the optical transitions will be spatially direct or indirect in such hetero-bilayers. Here, we investigate artificial semiconductor heterostructures built from single layer WSe2 and MoS2 building blocks. We observe a large Stokes-like shift of ~100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment with spatially direct absorption but spatially indirect emission. Notably, the photoluminescence intensity of this spatially indirect transition is strong, suggesting strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN (h-BN) dielectric layers into the vdW gap. The generic nature of this interlayer coupling consequently provides a new degree of freedom in band engineering and is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers.
△ Less
Submitted 14 April, 2014; v1 submitted 15 March, 2014;
originally announced March 2014.
