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Field effect enhancement in buffered quantum nanowire networks
Authors:
Filip Krizek,
Joachim E. Sestoft,
Pavel Aseev,
Sara Marti-Sanchez,
Saulius Vaitiekenas,
Lucas Casparis,
Sabbir A. Khan,
Yu Liu,
Tomas Stankevic,
Alexander M. Whiticar,
Alexandra Fursina,
Frenk Boekhout,
Rene Koops,
Emanuele Uccelli,
Leo P. Kouwenhoven,
Charles M. Marcus,
Jordi Arbiol,
Peter Krogstrup
Abstract:
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geomet…
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III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.
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Submitted 5 April, 2018; v1 submitted 21 February, 2018;
originally announced February 2018.
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Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
Authors:
Martin Heiß,
Sonia Conesa-Boj,
Jun Ren,
Hsiang-Han Tseng,
Adam Gali,
Andreas Rudolph,
Emanuele Uccelli,
Francesca Peiro,
Joan Ramon Morante,
Dieter Schuh,
Elisabeth Reiger,
Efthimios Kaxiras,
Jordi Arbiol,
Anna Fontcuberta i Morral
Abstract:
A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In…
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A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In the polytypic nanowires, it is shown that the regions that are predominantly composed of either zinc-blende or wurtzite phase show photoluminescence emission close to the bulk GaAs band gap, while regions composed of a nonperiodic superlattice of wurtzite and zinc-blende phases exhibit a redshift of the photoluminescence spectra as low as 1.455 eV. The dimensions of the quantum heterostructures are correlated with the light emission, allowing us to determine the band alignment between these two crystalline phases. Our first-principles electronic structure calculations within density functional theory, employing a hybrid-exchange functional, predict band offsets and effective masses in good agreement with experimental results.
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Submitted 23 November, 2010;
originally announced November 2010.
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Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots
Authors:
Martin Heiß,
Bernt Ketterer,
Emanuele Uccelli,
Joan Ramon Morante,
Jordi Arbiol,
Anna Fontcuberta i Morral
Abstract:
Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550°C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and elec…
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Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550°C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and electron energy loss spectroscopy. The results show that the incorporation of indium lowering the growth temperature does not have an effect in increasing the indium concentration in the bulk of the nanowire, which is limited to 3-5%. For growth temperatures below 575°C, indium rich regions form at the surface of the nanowires as a consequence of the radial growth. This results in the formation of quantum dots, which exhibit extremely sharp luminescence.
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Submitted 23 November, 2010;
originally announced November 2010.
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Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules and strain effects
Authors:
I. Zardo,
S. Conesa-Boj,
F. Peiro,
J. R. Morante,
J. Arbiol,
E. Uccelli,
G. Abstreiter,
A. Fontcuberta i Morral
Abstract:
Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E1(TO) at 267 cm-1 exhibits the highest intensity when the incident and analyzed polarization ar…
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Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E1(TO) at 267 cm-1 exhibits the highest intensity when the incident and analyzed polarization are parallel to the nanowire axis. This is a consequence of the nanowire geometry and dielectric mismatch with the environment, and in quite good agreement with the Raman selection rules. We also find a consistent splitting of 1 cm-1 of the E1(TO). The transversal optical mode related to the wurtzite structure, E2H, is measured between 254 and 256 cm-1, depending on the wurtzite content. The azymutal dependence of E2H indicates that the mode is excited with the highest efficiency when the incident and analyzed polarization are perpendicular to the nanowire axis, in agreement with the selection rules. The presence of strain between wurtzite and zinc-blende is analyzed by the relative shift of the E1(TO) and E2H modes. Finally, the influence of the surface roughness in the intensity of the longitudinal optical mode on {110} facets is presented.
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Submitted 7 December, 2009; v1 submitted 27 October, 2009;
originally announced October 2009.
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A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs
Authors:
J. Bauer,
D. Schuh,
E. Uccelli,
R. Schulz,
A. Kress,
F. Hofbauer,
J. J. Finley,
G. Abstreiter
Abstract:
We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces (cleaved-edge overgrowth) we have successfully fabricated arrays of long-range ordered InAs quantum dots. Both atomic force microscopy and micro-photoluminescence measurements dem…
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We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces (cleaved-edge overgrowth) we have successfully fabricated arrays of long-range ordered InAs quantum dots. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated.
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Submitted 12 March, 2004;
originally announced March 2004.
