Showing 1–50 of 53 results for author: Tyryshkin, A M

Insight into the partitioning and clustering mechanism of rare-earth cations in alkali aluminoborosilicate glasses

Authors: Hrishikesh Kamat, Fu Wang, Kristian Barnsley, John V. Hanna, Alexei M. Tyryshkin, Ashutosh Goel

Abstract: Rare-earth (RE) containing alkali aluminoborosilicate glasses find increasingly broad technological applications, with their further development only impeded by yet-poor understanding of coordination environment and structural role of RE ions in glasses. In this work we combine free induction decay (FID)-detected electron paramagnetic resonance (EPR), electron spin echo envelope modulation (ESEEM)… ▽ More Rare-earth (RE) containing alkali aluminoborosilicate glasses find increasingly broad technological applications, with their further development only impeded by yet-poor understanding of coordination environment and structural role of RE ions in glasses. In this work we combine free induction decay (FID)-detected electron paramagnetic resonance (EPR), electron spin echo envelope modulation (ESEEM), and MAS NMR spectroscopies, to examine the coordination environment and the clustering tendencies of RE3+ in a series of peralkaline aluminoborosilicate glasses co-doped with Nd2O3 (0.001-0.1 mol%) and 5 mol% La2O3. Quantitative EPR spectral analysis reveals three different Nd3+ forms coexisting in the glasses: isolated Nd3+ centers, dipole-coupled Nd clusters (Nd-O-X-O-Nd, where X = Si/B/Al), and spin-exchange-coupled Nd clusters, (Nd-O-Nd) and (Nd-O-La-O-Nd). Extensive RE clustering is observed at high RE2O3 concentrations, with more than 90% REs converting to dipole- and exchange-coupled Nd clusters already at [RE2O3] = 0.01 mol%. ESEEM analysis of the EPR-detectable Nd centers indicates a Na/Si-rich environment (four Na+ per Nd3+) for the isolated Nd3+ centers and the Na/Si/B-rich environment (2-3 Na+ and 1-2 boron per each Nd3+) for the dipole-coupled Nd clusters, while the EPR-undetectable exchanged-coupled RE clusters are predicted to exist in a Na/B-rich environment. The RE clustering induces nano-scale glass phase separation, while the Na/B-rich environment of the RE clusters implies a depletion of the same elements from the remaining host glass. Based on our results, we develop a mechanistic model that explains the high tendency of RE3+ to form clusters in alkali aluminoborosilicate glasses. △ Less

Submitted 19 April, 2021; originally announced April 2021.

Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity

Authors: Philipp Ross, Brendon C. Rose, Cheuk C. Lo, Mike L. W. Thewalt, Alexei M. Tyryshkin, Stephen A. Lyon, John J. L. Morton

Abstract: Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although such times are exceptionally long for electron spins in the solid state, they are nevertheless limited by donor electron spin-spin interactions. Suppressing such… ▽ More Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although such times are exceptionally long for electron spins in the solid state, they are nevertheless limited by donor electron spin-spin interactions. Suppressing such interactions requires even lower donor concentrations, which lie below the detection limit for typical electron spin resonance (ESR) spectrometers. Here we describe an alternative method for phosphorus donor ESR detection, exploiting the spin-to-charge conversion provided by the optical donor bound exciton transition. We characterise the method and its dependence on laser power and use it to measure a coherence time of $T_2 = 130 $ms for one of the purest silicon samples grown to-date ([P]$ = 5\times 10^{11} $cm$^{-3}$). We then benchmark this result using an alternative application of the donor bound exciton transition: optically polarising the donor spins before using conventional ESR detection at 1.7~K for a sample with [P]$ = 4\times10^{12} $cm$^{-3}$, and measuring in this case a $T_2$ of 350 ms. △ Less

Submitted 28 December, 2020; v1 submitted 4 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. Applied 11, 054014 (2019)

Dynamical decoupling of interacting dipolar spin ensembles

Authors: Evan S. Petersen, A. M. Tyryshkin, K. M. Itoh, Joel W. Ager, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. L. W. Thewalt, S. A. Lyon

Abstract: We demonstrate that CPMG and XYXY decoupling sequences with non-ideal $π$ pulses can reduce dipolar interactions between spins of the same species in solids. Our simulations of pulsed electron spin resonance (ESR) experiments show that $π$ rotations with small ($<$~10\%) imperfections refocus instantaneous diffusion. Here, the intractable N-body problem of interacting dipoles is approximated by th… ▽ More We demonstrate that CPMG and XYXY decoupling sequences with non-ideal $π$ pulses can reduce dipolar interactions between spins of the same species in solids. Our simulations of pulsed electron spin resonance (ESR) experiments show that $π$ rotations with small ($<$~10\%) imperfections refocus instantaneous diffusion. Here, the intractable N-body problem of interacting dipoles is approximated by the average evolution of a single spin in a changing mean field. These calculations agree well with experiments and do not require powerful hardware. Our results add to past attempts to explain similar phenomena in solid state nuclear magnetic resonance (NMR). Although the fundamental physics of NMR are similar to ESR, the larger linewidths in ESR and stronger dipolar interactions between electron spins compared to nuclear spins preclude drawing conclusions from NMR studies alone. For bulk spins, we also find that using XYXY results in less inflation of the deduced echo decay times as compared to decays obtained with CPMG. △ Less

Submitted 13 July, 2018; originally announced July 2018.

Comments: 10 pages, 5 figures

Strongly Anisotropic Spin Relaxation in the Neutral Silicon Vacancy Center in Diamond

Authors: Brendon C. Rose, Gergo Thiering, Alexei M. Tyryshkin, Andrew M. Edmonds, Matthew L. Markham, Adam Gali, Stephen A. Lyon, Nathalie P. de Leon

Abstract: Color centers in diamond are a promising platform for quantum technologies, and understanding their interactions with the environment is crucial for these applications. We report a study of spin- lattice relaxation (T1) of the neutral charge state of the silicon vacancy center in diamond. Above 20 K, T1 decreases rapidly with a temperature dependence characteristic of an Orbach process, and is str… ▽ More Color centers in diamond are a promising platform for quantum technologies, and understanding their interactions with the environment is crucial for these applications. We report a study of spin- lattice relaxation (T1) of the neutral charge state of the silicon vacancy center in diamond. Above 20 K, T1 decreases rapidly with a temperature dependence characteristic of an Orbach process, and is strongly anisotropic with respect to magnetic field orientation. As the angle of the magnetic field is rotated relative to the symmetry axis of the defect, T1 is reduced by over three orders of magnitude. The electron spin coherence time (T2) follows the same temperature dependence but is drastically shorter than T1. We propose that these observations result from phonon-mediated transitions to a low lying excited state that are spin conserving when the magnetic field is aligned with the defect axis, and we discuss likely candidates for this excited state. △ Less

Submitted 9 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 98, 235140 (2018)

Measuring electron spin flip-flops through nuclear spin echo decays

Authors: Evan S. Petersen, Alexei M. Tyryshkin, Kohei M. Itoh, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Mike L. W. Thewalt, Stephen A. Lyon

Abstract: We use the nuclear spin coherence of $^{31}$P donors in $^{28}$Si to determine flip-flop rates of donor electron spins. Isotopically purified $^{28}$Si crystals minimize the number of $^{29}$Si flip-flops, and measurements at 1.7 K suppress electron spin relaxation. The crystals have donor concentrations ranging from $1.2\times10^{14}$ to $3.3\times10^{15}~\text{P/cm}^3$, allowing us to detect how… ▽ More We use the nuclear spin coherence of $^{31}$P donors in $^{28}$Si to determine flip-flop rates of donor electron spins. Isotopically purified $^{28}$Si crystals minimize the number of $^{29}$Si flip-flops, and measurements at 1.7 K suppress electron spin relaxation. The crystals have donor concentrations ranging from $1.2\times10^{14}$ to $3.3\times10^{15}~\text{P/cm}^3$, allowing us to detect how electron flip-flop rates change with donor density. We also simulate how electron spin flip-flops can cause nuclear spin decoherence. We find that when these flip-flops are the primary cause of decoherence, Hahn echo decays have a stretched exponential form. For our two higher donor density crystals ($> 10^{15}~\text{P/cm}^3$), there is excellent agreement between simulations and experiments. In lower density crystals ($< 10^{15}~\text{P/cm}^3$), there is no longer agreement between simulations and experiments, suggesting a different, unknown mechanism is limiting nuclear spin coherence. The nuclear spin coherence in the lowest density crystal ($1.2 \times 10^{14}~\text{P/cm}^3$) allows us to place upper bounds on the magnitude of noise sources in bulk crystals such as electric field fluctuations that may degrade silicon quantum devices. △ Less

Submitted 12 September, 2017; v1 submitted 8 September, 2017; originally announced September 2017.

Comments: 13 pages, 4 figures

Observation of an environmentally insensitive solid state spin defect in diamond

Authors: Brendon C. Rose, Ding Huang, Zi-Huai Zhang, Alexei M. Tyryshkin, Sorawis Sangtawesin, Srikanth Srinivasan, Lorne Loudin, Matthew L. Markham, Andrew M. Edmonds, Daniel J. Twitchen, Stephen A. Lyon, Nathalie P. de Leon

Abstract: Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid environment can adversely impact coherence. For example, phonon- mediated spin relaxation can induce spin decoherence, and electric field noise can change the opt… ▽ More Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid environment can adversely impact coherence. For example, phonon- mediated spin relaxation can induce spin decoherence, and electric field noise can change the optical transition frequency over time. We report a novel color center with insensitivity to both of these sources of environmental decoherence: the neutral charge state of silicon vacancy (SiV0). Through careful material engineering, we achieve over 80% conversion of implanted silicon to SiV0. SiV0 exhibits excellent spin properties, with spin-lattice relaxation times (T1) approaching one minute and coherence times (T2) approaching one second, as well as excellent optical properties, with approximately 90% of its emission into the zero-phonon line and near-transform limited optical linewidths. These combined properties make SiV0 a promising defect for quantum networks. △ Less

Submitted 5 June, 2017; originally announced June 2017.

Multi-frequency Spin Manipulation Using Rapidly Tunable Superconducting Coplanar Waveguide Microresonators

Authors: A. T. Asfaw, A. J. Sigillito, A. M. Tyryshkin, T. Schenkel, S. A. Lyon

Abstract: In this work, we demonstrate the use of frequency-tunable superconducting NbTiN coplanar waveguide microresonators for multi-frequency pulsed electron spin resonance (ESR) experiments. By applying a bias current to the center pin, the resonance frequency ($\sim$7.6 GHz) can be continuously tuned by as much as 95 MHz in 270 ns without a change in the quality factor of 3000 at 2K. We demonstrate the… ▽ More In this work, we demonstrate the use of frequency-tunable superconducting NbTiN coplanar waveguide microresonators for multi-frequency pulsed electron spin resonance (ESR) experiments. By applying a bias current to the center pin, the resonance frequency ($\sim$7.6 GHz) can be continuously tuned by as much as 95 MHz in 270 ns without a change in the quality factor of 3000 at 2K. We demonstrate the ESR performance of our resonators by measuring donor spin ensembles in silicon and show that adiabatic pulses can be used to overcome magnetic field inhomogeneities and microwave power limitations due to the applied bias current. We take advantage of the rapid tunability of these resonators to manipulate both phosphorus and arsenic spins in a single pulse sequence, demonstrating pulsed double electron-electron resonance (DEER). Our NbTiN resonator design is useful for multi-frequency pulsed ESR and should also have applications in experiments where spin ensembles are used as quantum memories. △ Less

Submitted 18 July, 2017; v1 submitted 5 May, 2017; originally announced May 2017.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 111, 032601 (2017)

Coherent Rabi dynamics of a superradiant spin ensemble in a microwave cavity

Authors: B. C. Rose, A. M. Tyryshkin, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. L. W. Thewalt, K. M. Itoh, S. A. Lyon

Abstract: We achieve the strong coupling regime between an ensemble of phosphorus donor spins in a highly enriched $^{28}$Si crystal and a 3D dielectric resonator. Spins were polarized beyond Boltzmann equilibrium using spin selective optical excitation of the no-phonon bound exciton transition resulting in $N$ = $3.6\cdot10^{13}$ unpaired spins in the ensemble. We observed a normal mode splitting of the sp… ▽ More We achieve the strong coupling regime between an ensemble of phosphorus donor spins in a highly enriched $^{28}$Si crystal and a 3D dielectric resonator. Spins were polarized beyond Boltzmann equilibrium using spin selective optical excitation of the no-phonon bound exciton transition resulting in $N$ = $3.6\cdot10^{13}$ unpaired spins in the ensemble. We observed a normal mode splitting of the spin ensemble-cavity polariton resonances of 2$g\sqrt{N}$ = 580 kHz (where each spin is coupled with strength $g$) in a cavity with a quality factor of 75,000 ($γ\ll κ\approx$ 60 kHz where $γ$ and $κ$ are the spin dephasing and cavity loss rates, respectively). The spin ensemble has a long dephasing time (T$_2^*$ = 9 $μ$s) providing a wide window for viewing the dynamics of the coupled spin ensemble-cavity system. The free induction decay shows up to a dozen collapses and revivals revealing a coherent exchange of excitations between the superradiant state of the spin ensemble and the cavity at the rate $g\sqrt{N}$. The ensemble is found to evolve as a single large pseudospin according to the Tavis-Cummings model due to minimal inhomogeneous broadening and uniform spin-cavity coupling. We demonstrate independent control of the total spin and the initial Z-projection of the psuedospin using optical excitation and microwave manipulation respectively. We vary the microwave excitation power to rotate the pseudospin on the Bloch sphere and observe a long delay in the onset of the superradiant emission as the pseudospin approaches full inversion. This delay is accompanied by an abrupt $π$ phase shift in the peusdospin microwave emission. The scaling of this delay with the initial angle and the sudden phase shift are explained by the Tavis-Cummings model. △ Less

Submitted 1 February, 2017; originally announced February 2017.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. X 7, 031002 (2017)

Electrically driving nuclear spin qubits with microwave photonic bangap resonators

Authors: A. J. Sigillito, A. M. Tyryshkin, T. Schenkel, A. A. Houck, S. A. Lyon

Abstract: The electronic and nuclear spin degrees of freedom for donor impurities in semiconductors form ultra coherent two-level systems that are useful for quantum information applications. Spins naturally have magnetic dipoles, so alternating current (AC) magnetic fields are frequently used to drive spin transitions and perform quantum gates. These fields can be difficult to spatially confine to single d… ▽ More The electronic and nuclear spin degrees of freedom for donor impurities in semiconductors form ultra coherent two-level systems that are useful for quantum information applications. Spins naturally have magnetic dipoles, so alternating current (AC) magnetic fields are frequently used to drive spin transitions and perform quantum gates. These fields can be difficult to spatially confine to single donor qubits so alternative methods of control such as AC electric field driven spin resonance are desirable. However, donor spin qubits do not have electric dipole moments so that they can not normally be driven by electric fields. In this work we challenge that notion by demonstrating a new, all-electric-field method for controlling neutral $^{31}$P and $^{75}$As donor nuclear spins in silicon through modulation of their donor-bound electrons. This method has major advantages over magnetic field control since electric fields are easy to confine at the nanoscale. This leads to lower power requirements, higher qubit densities, and faster gate times. We also show that this form of control allows for driving nuclear spin qubits at either their resonance frequency or the first subharmonic of that frequency, thus reducing device bandwidth requirements. Interestingly, as we relax the bandwidth requirements, we demonstrate that the computational Hilbert space is expanded to include double quantum transitions, making it feasible to use all four nuclear spin states to implement nuclear-spin-based qudits in Si:As. Based on these results, one can envision novel high-density, low-power quantum computing architectures using nuclear spins in silicon. △ Less

Submitted 23 January, 2017; originally announced January 2017.

Annealing shallow Si/SiO$_2$ interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

Authors: **-Sung Kim, Alexei M. Tyryshkin, Stephen A. Lyon

Abstract: Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects ($\leq$ 4 meV below the conduction band edge) created by an e-beam exposure by measuring the density of shallow electron traps in two sets of high-mobility MOS fi… ▽ More Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects ($\leq$ 4 meV below the conduction band edge) created by an e-beam exposure by measuring the density of shallow electron traps in two sets of high-mobility MOS field-effect transistors (MOSFETs). One set was irradiated with an electron-beam (10 keV, 40 $μ$C/cm$^2$) and was subsequently annealed in forming gas while the other set remained unexposed. Low temperature (335 mK) transport measurements indicate that the forming gas anneal recovers the e-beam exposed sample's peak mobility (14,000 cm$^2$/Vs) to within a factor of two of the unexposed sample's mobility (23,000 cm$^2$/Vs). Using electron spin resonance (ESR) to measure the density of shallow traps, we find that the two sets of devices are nearly identical, indicating the forming gas anneal is sufficient to anneal out shallow defects generated by the e-beam exposure. Fitting the two sets of devices' transport data to a percolation transition model, we extract a T=0 percolation threshold density in quantitative agreement with our lowest temperature ESR-measured trap densities. △ Less

Submitted 10 March, 2017; v1 submitted 27 December, 2016; originally announced December 2016.

Large Stark tuning of donor electron spin quantum bits in germanium

Authors: A. J. Sigillito, A. M. Tyryshkin, J. W. Beeman, E. E. Haller, K. M. Itoh, S. A. Lyon

Abstract: Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult to selectively manipulate single donor electron spins. Here, we show that by replacing the prevailing semiconductor host material (silicon) with germanium, don… ▽ More Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult to selectively manipulate single donor electron spins. Here, we show that by replacing the prevailing semiconductor host material (silicon) with germanium, donor electron spin qubits can be electrically tuned by more than an ensemble linewidth, making them compatible with gate addressable quantum computing architectures. Using X-band pulsed electron spin resonance, we measured the Stark effect for donor electron spins in germanium. We resolved both spin-orbit and hyperfine Stark shifts and found that at 0.4 T, the spin-orbit Stark shift dominates. The spin-orbit Stark shift is highly anisotropic, depending on the electric field orientation relative to the crystal axes and external magnetic field. When the Stark shift is maximized, the spin-orbit Stark parameter is four orders of magnitude larger than in silicon. At select orientations a hyperfine Stark effect was also resolved and is an order of magnitude larger than in silicon. We report the Stark parameters for $^{75}$As and $^{31}$P donor electrons and compare them to the available theory. Our data reveal that $^{31}$P donors in germanium can be tuned by at least four times the ensemble linewidth making germanium an appealing new host material for spin qubits that offers major advantages over silicon. △ Less

Submitted 29 June, 2016; v1 submitted 10 June, 2016; originally announced June 2016.

Journal ref: Phys. Rev. B 94, 125204 (2016)

Spin Coherence and $^{14}$N ESEEM Effects of Nitrogen-Vacancy Centers in Diamond with X-band Pulsed ESR

Authors: B. C. Rose, C. D. Weis, A. M. Tyryshkin, T. Schenkel, S. A. Lyon

Abstract: Pulsed ESR experiments are reported for ensembles of negatively-charged nitrogen-vacancy centers (NV$^-$) in diamonds at X-band magnetic fields (280-400 mT) and low temperatures (2-70 K). The NV$^-$ centers in synthetic type IIb diamonds (nitrogen impurity concentration $<1$~ppm) are prepared with bulk concentrations of $2\cdot 10^{13}$ cm$^{-3}$ to $4\cdot 10^{14}$ cm$^{-3}$ by high-energy electr… ▽ More Pulsed ESR experiments are reported for ensembles of negatively-charged nitrogen-vacancy centers (NV$^-$) in diamonds at X-band magnetic fields (280-400 mT) and low temperatures (2-70 K). The NV$^-$ centers in synthetic type IIb diamonds (nitrogen impurity concentration $<1$~ppm) are prepared with bulk concentrations of $2\cdot 10^{13}$ cm$^{-3}$ to $4\cdot 10^{14}$ cm$^{-3}$ by high-energy electron irradiation and subsequent annealing. We find that a proper post-radiation anneal (1000$^\circ$C for 60 mins) is critically important to repair the radiation damage and to recover long electron spin coherence times for NV$^-$s. After the annealing, spin coherence times of T$_2 = 0.74$~ms at 5~K are achieved, being only limited by $^{13}$C nuclear spectral diffusion in natural abundance diamonds. At X-band magnetic fields, strong electron spin echo envelope modulation (ESEEM) is observed originating from the central $^{14}$N nucleus. The ESEEM spectral analysis allows for accurate determination of the $^{14}$N nuclear hypefine and quadrupole tensors. In addition, the ESEEM effects from two proximal $^{13}$C sites (second-nearest neighbor and fourth-nearest neighbor) are resolved and the respective $^{13}$C hyperfine coupling constants are extracted. △ Less

Submitted 13 March, 2016; originally announced March 2016.

Comments: 10 pages, 5 figures

Addressing spin transitions on 209Bi donors in silicon using circularly-polarized microwaves

Authors: T. Yasukawa, A. J. Sigillito, B. C. Rose, A. M. Tyryshkin, S. A. Lyon

Abstract: Over the past decade donor spin qubits in isotopically enriched $^{28}$Si have been intensely studied due to their exceptionally long coherence times. More recently bismuth donor electron spins have become popular because Bi has a large nuclear spin which gives rise to clock transitions (first-order insensitive to magnetic field noise). At every clock transition there are two nearly degenerate tra… ▽ More Over the past decade donor spin qubits in isotopically enriched $^{28}$Si have been intensely studied due to their exceptionally long coherence times. More recently bismuth donor electron spins have become popular because Bi has a large nuclear spin which gives rise to clock transitions (first-order insensitive to magnetic field noise). At every clock transition there are two nearly degenerate transitions between four distinct states which can be used as a pair of qubits. Here it is experimentally demonstrated that these transitions are excited by microwaves of opposite helicity such that they can be selectively driven by varying microwave polarization. This work uses a combination of a superconducting coplanar waveguide (CPW) microresonator and a dielectric resonator to flexibly generate arbitrary elliptical polarizations while retaining the high sensitivity of the CPW. △ Less

Submitted 21 January, 2016; v1 submitted 21 January, 2016; originally announced January 2016.

Journal ref: Phys. Rev. B 93, 121306 (2016)

Nuclear spin decoherence of neutral $^{31}$P donors in silicon: Effect of environmental $^{29}$Si nuclei

Authors: Evan S. Petersen, Alexei M. Tyryshkin, John J. L. Morton, Eisuke Abe, Shinichi Tojo, Kohei M. Itoh, Mike L. W. Thewalt, Stephen A. Lyon

Abstract: Spectral diffusion arising from $^{29}$Si nuclear spin flip-flops, known to be a primary source of electron spin decoherence in silicon, is also predicted to limit the coherence times of neutral donor nuclear spins in silicon. Here, the impact of this mechanism on $^{31}$P nuclear spin coherence is measured as a function of $^{29}$Si concentration using X-band pulsed electron nuclear double resona… ▽ More Spectral diffusion arising from $^{29}$Si nuclear spin flip-flops, known to be a primary source of electron spin decoherence in silicon, is also predicted to limit the coherence times of neutral donor nuclear spins in silicon. Here, the impact of this mechanism on $^{31}$P nuclear spin coherence is measured as a function of $^{29}$Si concentration using X-band pulsed electron nuclear double resonance (ENDOR). The $^{31}$P nuclear spin echo decays show that decoherence is controlled by $^{29}$Si flip-flops resulting in both fast (exponential) and slow (non-exponential) spectral diffusion processes. The decay times span a range from 100 ms in crystals containing 50% $^{29}$Si to 3 s in crystals containing 1% $^{29}$Si. These nuclear spin echo decay times for neutral donors are orders of magnitude longer than those reported for ionized donors in natural silicon. The electron spin of the neutral donors `protects' the donor nuclear spins by suppressing $^{29}$Si flip-flops within a `frozen core', as a result of the detuning of the $^{29}$Si spins caused by their hyperfine coupling to the electron spin. △ Less

Submitted 21 August, 2015; originally announced August 2015.

Journal ref: Phys. Rev. B 93, 161202 (2016)

Electron spin coherence of shallow donors in natural and isotopically enriched germanium

Authors: A. J. Sigillito, R. M. Jock, A. M. Tyryshkin, J. W. Beeman, E. E. Haller, K. M. Itoh, S. A. Lyon

Abstract: Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long coherence times ($T_{2}$) when the host material is isotopically enriched to remove any magnetic nuclei. Germanium also has non-magnetic isotopes so it is expect… ▽ More Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long coherence times ($T_{2}$) when the host material is isotopically enriched to remove any magnetic nuclei. Germanium also has non-magnetic isotopes so it is expected to support long $T_{2}$s while offering some new properties. Compared to Si, Ge has a strong spin-orbit coupling, large electron wavefunction, high mobility, and highly anisotropic conduction band valleys which will all give rise to new physics. In this Letter, the first pulsed electron spin resonance (ESR) measurements of $T_{2}$ and the spin-lattice relaxation ($T_1$) times for $^{75}$As and $^{31}$P donors in natural and isotopically enriched germanium are presented. We compare samples with various levels of isotopic enrichment and find that spectral diffusion due to $^{73}$Ge nuclear spins limits the coherence in samples with significant amounts of $^{73}$Ge. For the most highly enriched samples, we find that $T_1$ limits $T_2$ to $T_2 = 2T_1$. We report an anisotropy in $T_1$ and the ensemble linewidths for magnetic fields oriented along different crystal axes but do not resolve any angular dependence to the spectral-diffusion-limited $T_2$ in samples with $^{73}$Ge. △ Less

Submitted 7 November, 2015; v1 submitted 18 June, 2015; originally announced June 2015.

Spin relaxation and donor-acceptor recombination of Se$^+$ in 28-silicon

Authors: Roberto Lo Nardo, Gary Wolfowicz, Stephanie Simmons, Alexei M. Tyryshkin, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael Steger, Stephen A. Lyon, Mike L. W. Thewalt, John J. L. Morton

Abstract: Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studie… ▽ More Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly-ionised selenium donor (Se$^{+}$) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation ($T_1$) and coherence ($T_2$) times of Se$^{+}$ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above $\sim 15$ K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se$^0$. △ Less

Submitted 1 May, 2015; v1 submitted 19 March, 2015; originally announced March 2015.

ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon

Authors: S. Shankar, A. M. Tyryshkin, S. A. Lyon

Abstract: Dopants in silicon have been studied for many decades using optical and electron spin resonance (ESR) spectroscopy. Recently, new features have been observed in the spectra of dopants in isotopically enriched 28Si since the reduced inhomogeneous linewidth in this material improves spectral resolution. With this in mind, we measured ESR on exchange coupled phosphorus dimers in 28Si and report two r… ▽ More Dopants in silicon have been studied for many decades using optical and electron spin resonance (ESR) spectroscopy. Recently, new features have been observed in the spectra of dopants in isotopically enriched 28Si since the reduced inhomogeneous linewidth in this material improves spectral resolution. With this in mind, we measured ESR on exchange coupled phosphorus dimers in 28Si and report two results. First, a new fine structure is observed in the ESR spectrum arising from state mixing by the hyperfine coupling to the 31P nuclei, which is enhanced when the exchange energy is comparable to the Zeeman energy. This fine structure enables us to spectroscopically address two separate dimer sub-ensembles, the first with exchange (J) coupling ranging from 2 to 7 GHz and the second with J ranging from 6 to 60 GHz. Next, the average spin relaxation times, T1 and T2 of both dimer sub-ensembles were measured using pulsed ESR at 0.35 T. Both T1 and T2 for transitions between triplet states of the dimers were found to be identical to the relaxation times of isolated phosphorus donors in 28Si, with T2 = 4 ms at 1.7 K limited by spectral diffusion due to dipolar interactions with neighboring donor electron spins. This result, consistent with theoretical predictions, implies that an exchange coupling of 2 - 60 GHz does not limit the dimer T1 and T2 in bulk Si at the 10 ms timescale. △ Less

Submitted 10 June, 2015; v1 submitted 11 September, 2014; originally announced September 2014.

Comments: 24 pages, 9 figures

Journal ref: Phys. Rev. B 91, 245206 (2015)

Anisotropic Stark Effect and Electric-Field Noise Suppression for Phosphorus Donor Qubits in Silicon

Authors: A. J. Sigillito, A. M. Tyryshkin, S. A. Lyon

Abstract: We report the use of novel, capacitively terminated coplanar waveguide (CPW) resonators to measure the quadratic Stark shift of phosphorus donor qubits in Si. We confirm that valley repopulation leads to an anisotropic spin-orbit Stark shift depending on electric and magnetic field orientations relative to the Si crystal. By measuring the linear Stark effect, we estimate the effective electric fie… ▽ More We report the use of novel, capacitively terminated coplanar waveguide (CPW) resonators to measure the quadratic Stark shift of phosphorus donor qubits in Si. We confirm that valley repopulation leads to an anisotropic spin-orbit Stark shift depending on electric and magnetic field orientations relative to the Si crystal. By measuring the linear Stark effect, we estimate the effective electric field due to strain in our samples. We show that in the presence of this strain, electric-field sources of decoherence can be non-negligible. Using our measured values for the Stark shift, we predict magnetic fields for which the spin-orbit Stark effect cancels the hyperfine Stark effect, suppressing decoherence from electric-field noise. We discuss the limitations of these noise-suppression points due to random distributions of strain and propose a method for overcoming them. △ Less

Submitted 8 March, 2015; v1 submitted 10 September, 2014; originally announced September 2014.

Journal ref: Phys. Rev. Lett. 114, 217601 (2015)

Host isotope mass effects on the hyperfine interaction of group-V donors in silicon

Authors: T. Sekiguchi, A. M. Tyryshkin, S. Tojo, E. Abe, R. Mori, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, J. W. Ager, E. E. Haller, M. L. W. Thewalt, J. J. L. Morton, S. A. Lyon, K. M. Itoh

Abstract: The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical lik… ▽ More The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical likelihood of the nine possible average Si masses in the four nearest-neighbor sites due to random occupation by the three stable isotopes Si-28, Si-29, and Si-30. Further investigation with P-31 donors shows that the resolved ENDOR components shift linearly with the bulk-averaged Si mass. △ Less

Submitted 25 July, 2014; originally announced July 2014.

Comments: 5 pages, 4 figures, 1 table

Journal ref: Phys. Rev. B 90, 121203 (2014)

Fast, low-power manipulation of spin ensembles in superconducting microresonators

Authors: Anthony J. Sigillito, Hans Malissa, Alexei M. Tyryshkin, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Mike L. W. Thewalt, Kohei M. Itoh, John J. L. Morton, Andrew A. Houck, David I. Schuster, S. A. Lyon

Abstract: We demonstrate the use of high-Q superconducting coplanar waveguide (CPW) microresonators to perform rapid manipulations on a randomly distributed spin ensemble using very low microwave power (400 nW). This power is compatible with dilution refrigerators, making microwave manipulation of spin ensembles feasible for quantum computing applications. We also describe the use of adiabatic microwave pul… ▽ More We demonstrate the use of high-Q superconducting coplanar waveguide (CPW) microresonators to perform rapid manipulations on a randomly distributed spin ensemble using very low microwave power (400 nW). This power is compatible with dilution refrigerators, making microwave manipulation of spin ensembles feasible for quantum computing applications. We also describe the use of adiabatic microwave pulses to overcome microwave magnetic field ($B_{1}$) inhomogeneities inherent to CPW resonators. This allows for uniform control over a randomly distributed spin ensemble. Sensitivity data are reported showing a single shot (no signal averaging) sensitivity to $10^{7}$ spins or $3 \times 10^{4}$ spins/$\sqrt{Hz}$ with averaging. △ Less

Submitted 1 May, 2014; v1 submitted 28 February, 2014; originally announced March 2014.

Comments: 5 pages, 4 figures

Stark shift and field ionization of arsenic donors in $^{28}$Si-SOI structures

Authors: C. C. Lo, S. Simmons, R. Lo Nardo, C. D. Weis, A. M. Tyryshkin, J. Meijer, D. Rogalla, S. A. Lyon, J. Bokor, T. Schenkel, J. J. L. Morton

Abstract: We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large an… ▽ More We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to $\sim$ 2 V/$μ$m to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the $^{28}$Si SOI layer and find a contact hyperfine Stark parameter of $η_a=-1.9\pm0.2\times10^{-3} μ$m$^2$/V$^2$. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance. △ Less

Submitted 27 January, 2014; originally announced January 2014.

Comments: 5 pages, 3 figures

Atomic clock transitions in silicon-based spin qubits

Authors: Gary Wolfowicz, Alexei M. Tyryshkin, Richard E. George, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Mike L. W. Thewalt, Stephen A. Lyon, John J. L. Morton

Abstract: A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or active error correction methods such as dynamic decoupling, or even combinations of the two. However, a powerful method applied to trapped ions in the context of f… ▽ More A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or active error correction methods such as dynamic decoupling, or even combinations of the two. However, a powerful method applied to trapped ions in the context of frequency standards and atomic clocks, is the use of particular spin transitions which are inherently robust to external perturbations. Here we show that such `clock transitions' (CTs) can be observed for electron spins in the solid state, in particular using bismuth donors in silicon. This leads to dramatic enhancements in the electron spin coherence time, exceeding seconds. We find that electron spin qubits based on CTs become less sensitive to the local magnetic environment, including the presence of 29Si nuclear spins as found in natural silicon. We expect the use of such CTs will be of additional importance for donor spins in future devices, mitigating the effects of magnetic or electric field noise arising from nearby interfaces. △ Less

Submitted 28 January, 2013; originally announced January 2013.

Comments: 11 pages, 6 figures

Decoherence mechanisms of 209Bi donor electron spins in isotopically pure 28Si

Authors: Gary Wolfowicz, Stephanie Simmons, Alexei M. Tyryshkin, Richard E. George, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Stephen A. Lyon, Mike L. W. Thewalt, John J. L. Morton

Abstract: Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin qubit compared to the more common phosphorus donor. Previous studies on Si:Bi have been performed using natural silicon where linewidths and electron spin cohere… ▽ More Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin qubit compared to the more common phosphorus donor. Previous studies on Si:Bi have been performed using natural silicon where linewidths and electron spin coherence times are limited by the presence of 29Si impurities. Here we describe electron spin resonance (ESR) and electron nuclear double resonance (ENDOR) studies on 209Bi in isotopically pure 28Si. ESR and ENDOR linewidths, transition probabilities and coherence times are understood in terms of the spin Hamiltonian parameters showing a dependence on field and mI of the 209Bi nuclear spin. We explore various decoherence mechanisms applicable to the donor electron spin, measuring coherence times up to 700 ms at 1.7 K at X-band, comparable with 28Si:P. The coherence times we measure follow closely the calculated field-sensitivity of the transition frequency, providing a strong motivation to explore 'clock' transitions where coherence lifetimes could be further enhanced. △ Less

Submitted 13 September, 2012; v1 submitted 16 July, 2012; originally announced July 2012.

Comments: 5 pages, 4 figures

Superconducting coplanar waveguide resonators for low temperature pulsed electron spin resonance spectroscopy

Authors: H. Malissa, D. I. Schuster, A. M. Tyryshkin, A. A. Houck, S. A. Lyon

Abstract: We discuss the design and implementation of thin film superconducting coplanar waveguide micro- resonators for pulsed ESR experiments. The performance of the resonators with P doped Si epilayer samples is compared to waveguide resonators under equivalent conditions. The high achievable filling factor even for small sized samples and the relatively high Q-factor result in a sensitivity that is supe… ▽ More We discuss the design and implementation of thin film superconducting coplanar waveguide micro- resonators for pulsed ESR experiments. The performance of the resonators with P doped Si epilayer samples is compared to waveguide resonators under equivalent conditions. The high achievable filling factor even for small sized samples and the relatively high Q-factor result in a sensitivity that is superior to that of conventional waveguide resonators, in particular to spins close to the sample surface. The peak microwave power is on the order of a few microwatts, which is compatible with measurements at ultra low temperatures. We also discuss the effect of the nonuniform microwave magnetic field on the Hahn echo power dependence. △ Less

Submitted 28 February, 2012; originally announced February 2012.

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

Authors: C. D. Weis, C. C. Lo, V. Lang, A. M. Tyryshkin, R. E. George, K. M. Yu, J. Bokor, S. A. Lyon, J. J. L. Morton, T. Schenkel

Abstract: We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms… ▽ More We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon. △ Less

Submitted 26 February, 2012; v1 submitted 7 February, 2012; originally announced February 2012.

Comments: 4 pages, 4 figures

A spin quantum bit architecture with coupled donors and quantum dots in silicon

Authors: T. Schenkel, C. C. Lo, C. D. Weis, J. Bokor, A. M. Tyryshkin, S. A. Lyon

Abstract: Spins of donor electrons and nuclei in silicon are promising quantum bit (qubit) candidates which combine long coherence times with the fabrication finesse of the silicon nanotechnology industry. We outline a potentially scalable spin qubit architecture where donor nuclear and electron spins are coupled to spins of electrons in quantum dots and discuss requirements for donor placement aligned to q… ▽ More Spins of donor electrons and nuclei in silicon are promising quantum bit (qubit) candidates which combine long coherence times with the fabrication finesse of the silicon nanotechnology industry. We outline a potentially scalable spin qubit architecture where donor nuclear and electron spins are coupled to spins of electrons in quantum dots and discuss requirements for donor placement aligned to quantum dots by single ion implantation. △ Less

Submitted 10 October, 2011; originally announced October 2011.

Report number: in "Single Atom Electronics", E. Prati, T. Shinada (eds), Pan Stanford, 2013, pp. 255-279

Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance

Authors: R. M. Jock, S. Shankar, A. M. Tyryshkin, Jianhua He, K. Eng, K. D. Childs, L. A. Tracy, M. P. Lilly, M. S. Carroll, S. A. Lyon

Abstract: We present an electron spin resonance (ESR) approach to characterize shallow electron trap** in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface qualit… ▽ More We present an electron spin resonance (ESR) approach to characterize shallow electron trap** in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO2 interface quality at low electron densities, where conventional mobility measurements are not possible. △ Less

Submitted 2 December, 2011; v1 submitted 4 October, 2011; originally announced October 2011.

Comments: 6 pages, 3 figures

Journal ref: Appl. Phys. Lett. 100, 023503 (2012)

Electron spin coherence exceeding seconds in high purity silicon

Authors: Alexei M. Tyryshkin, Shinichi Tojo, John J. L. Morton, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Thomas Schenkel, Michael L. W. Thewalt, Kohei M. Itoh, S. A. Lyon

Abstract: Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of an isotopically-purified $^{28}$Si form with no magnetic nuclei overcomes what is a main source of spin decoherence in many other mater… ▽ More Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of an isotopically-purified $^{28}$Si form with no magnetic nuclei overcomes what is a main source of spin decoherence in many other materials. Nevertheless, the coherence lifetimes of electron spins in the solid state have typically remained several orders of magnitude lower than what can be achieved in isolated high-vacuum systems such as trapped ions. Here we examine electron spin coherence of donors in very pure $^{28}$Si material, with a residual $^{29}$Si concentration of less than 50 ppm and donor densities of $10^{14-15}$ per cm$^3$. We elucidate three separate mechanisms for spin decoherence, active at different temperatures, and extract a coherence lifetime $T_2$ up to 2 seconds. In this regime, we find the electron spin is sensitive to interactions with other donor electron spins separated by ~200 nm. We apply a magnetic field gradient in order to suppress such interactions and obtain an extrapolated electron spin $T_2$ of 10 seconds at 1.8 K. These coherence lifetimes are without peer in the solid state by several orders of magnitude and comparable with high-vacuum qubits, making electron spins of donors in silicon ideal components of a quantum computer, or quantum memories for systems such as superconducting qubits. △ Less

Submitted 18 May, 2011; originally announced May 2011.

Comments: 18 pages, 4 figures, supplementary information

Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas

Authors: C. C. Lo, V. Lang, R. E. George, J. J. L. Morton, A. M. Tyryshkin, S. A. Lyon, J. Bokor, T. Schenkel

Abstract: We have measured the electrically detected magnetic resonance of channel-implanted donors in silicon field-effect transistors in resonant X- ($9.7\:$GHz) and W-band ($94\:$GHz) microwave cavities, with corresponding Zeeman fields of $0.35\:$T and $3.36\:$T, respectively. It is found that the conduction electron resonance signal increases by two orders of magnitude from X- to W-band, while the hype… ▽ More We have measured the electrically detected magnetic resonance of channel-implanted donors in silicon field-effect transistors in resonant X- ($9.7\:$GHz) and W-band ($94\:$GHz) microwave cavities, with corresponding Zeeman fields of $0.35\:$T and $3.36\:$T, respectively. It is found that the conduction electron resonance signal increases by two orders of magnitude from X- to W-band, while the hyperfine-split donor resonance signals are enhanced by over one order of magnitude. We rule out a bolometric origin of the resonance signals, and find that direct spin-dependent scattering between the two-dimensional electron gas and neutral donors is inconsistent with the experimental observations. We propose a new polarization transfer model from the donor to the conduction electrons as the main contributer to the spin resonance signals observed. △ Less

Submitted 17 December, 2010; originally announced December 2010.

Comments: 5 pages, 3 figures

Effect of pulse error accumulation on dynamical decoupling of the electron spins of phosphorus donors in silicon

Authors: Zhi-Hui Wang, Wenxian Zhang, A. M. Tyryshkin, S. A. Lyon, J. W. Ager, E. E. Haller, V. V. Dobrovitski

Abstract: Dynamical decoupling (DD) is an efficient tool for preserving quantum coherence in solid-state spin systems. However, the imperfections of real pulses can ruin the performance of long DD sequences. We investigate the accumulation and compensation of different pulse errors in DD using the electron spins of phosphorus donors in silicon as a test system. We study periodic DD sequences (PDD) based on… ▽ More Dynamical decoupling (DD) is an efficient tool for preserving quantum coherence in solid-state spin systems. However, the imperfections of real pulses can ruin the performance of long DD sequences. We investigate the accumulation and compensation of different pulse errors in DD using the electron spins of phosphorus donors in silicon as a test system. We study periodic DD sequences (PDD) based on spin rotations about two perpendicular axes, and their concatenated and symmetrized versions. We show that pulse errors may quickly destroy some spin states, but maintain other states with high fidelity over long times. Pulse sequences based on spin rotations about $x$ and $y$ axes outperform those based on $x$ and $z$ axes due to the accumulation of pulse errors. Concatenation provides an efficient way to suppress the impact of pulse errors, and can maintain high fidelity for all spin components: pulse errors do not accumulate (to first order) as the concatenation level increases, despite the exponential increase in the number of pulses. Our theoretical model gives a clear qualitative picture of the error accumulation, and produces results in quantitative agreement with the experiments. △ Less

Submitted 3 January, 2012; v1 submitted 29 November, 2010; originally announced November 2010.

Comments: 13 pages, 5 figures

Journal ref: Phys. Rev. B 85, 085206 (2012)

Coherent state transfer between an electron- and nuclear spin in 15N@C60

Authors: Richard M. Brown, Alexei M. Tyryshkin, Kyriakos Porfyrakis, Erik M. Gauger, Brendon W. Lovett, Arzhang Ardavan, S. A. Lyon, G. Andrew. D. Briggs, John J. L. Morton

Abstract: Electron spin qubits in molecular systems offer high reproducibility and the ability to self assemble into larger architectures. However, interactions between neighbouring qubits are 'always-on' and although the electron spin coherence times can be several hundred microseconds, these are still much shorter than typical times for nuclear spins. Here we implement an electron-nuclear hybrid scheme wh… ▽ More Electron spin qubits in molecular systems offer high reproducibility and the ability to self assemble into larger architectures. However, interactions between neighbouring qubits are 'always-on' and although the electron spin coherence times can be several hundred microseconds, these are still much shorter than typical times for nuclear spins. Here we implement an electron-nuclear hybrid scheme which uses coherent transfer between electron and nuclear spin degrees of freedom in order to both controllably turn on/off dipolar interactions between neighbouring spins and benefit from the long nuclear spin decoherence times (T2n). We transfer qubit states between the electron and 15N nuclear spin in 15N@C60 with a two-way process fidelity of 88%, using a series of tuned microwave and radiofrequency pulses and measure a nuclear spin coherence lifetime of over 100 ms. △ Less

Submitted 24 November, 2010; v1 submitted 23 November, 2010; originally announced November 2010.

Comments: 5 pages, 3 figures with supplementary material (8 pages)

Dynamical Decoupling in the Presence of Realistic Pulse Errors

Authors: A. M. Tyryshkin, Zhi-Hui Wang, Wenxian Zhang, E. E. Haller, J. W. Ager, V. V. Dobrovitski, S. A. Lyon

Abstract: One of the most significant hurdles to be overcome on the path to practical quantum information processors is dealing with quantum errors. Dynamical decoupling is a particularly promising approach that complements conventional quantum error correction by eliminating some correlated errors without the overhead of additional qubits. In practice, the control pulses used for decoupling are imperfect a… ▽ More One of the most significant hurdles to be overcome on the path to practical quantum information processors is dealing with quantum errors. Dynamical decoupling is a particularly promising approach that complements conventional quantum error correction by eliminating some correlated errors without the overhead of additional qubits. In practice, the control pulses used for decoupling are imperfect and thus introduce errors which can accumulate after many pulses. These instrumental errors can destroy the quantum state. Here we examine several dynamical decoupling sequences, and their concatenated variants, using electron spin resonance of donor electron spins in a $^{28}$Si crystal. All of the sequences cancel phase noise arising from slowly fluctuating magnetic fields in our spectrometer, but only those sequences based upon alternating $π$-rotations about the X- and Y-axes in the rotating frame (XYXY sequences) demonstrate the ability to store an arbitrary quantum state. By comparing the experimental results with a detailed theoretical analysis we demonstrate that the superior performance of XYXY sequences arises from the fact that they are self-correcting for the dominant instrumental pulse errors in magnetic resonance experiments. We further find that concatenated sequences perform better than the periodic variants, maintaining near 100% fidelities for spin states even after several hundred control pulses. Intuitively, one would expect the instrumental error to increase with the number of pulses in the sequence but we show that the dominant first-order error does not increase when concatenating the XYXY sequence. △ Less

Submitted 13 November, 2010; v1 submitted 8 November, 2010; originally announced November 2010.

Comments: 15 pages, 3 figures

Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon

Authors: H. Tezuka, A. R. Stegner, A. M. Tyryshkin, S. Shankar, M. L. W. Thewalt, S. A. Lyon, K. M. Itoh, M. S. Brandt

Abstract: The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified 28Si single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction of the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous d… ▽ More The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified 28Si single crystals. Moreover, extremely narrow substructures in the EPR spectra are visible corresponding to either an enhancement or a reduction of the absorbed microwave on resonance. The origin of the substructures is attributed to a combination of simultaneous double excitation and spin relaxation in the four level spin system of the acceptors. A spin population model is developed which qualitatively describes the experimental results. △ Less

Submitted 23 March, 2010; originally announced March 2010.

Comments: 4 pages, 3 figures

Spin relaxation and coherence times for electrons at the Si/SiO2 interface

Authors: S. Shankar, A. M. Tyryshkin, Jianhua He, S. A. Lyon

Abstract: While electron spins in silicon heterostructures make attractive qubits, little is known about the coherence of electrons at the Si/SiO2 interface. We report spin relaxation (T1) and coherence (T2) times for mobile electrons and natural quantum dots at a 28Si/SiO2 interface. Mobile electrons have short T1 and T2 of 0.3 us at 5 K. In line with predictions, confining electrons and cooling increases… ▽ More While electron spins in silicon heterostructures make attractive qubits, little is known about the coherence of electrons at the Si/SiO2 interface. We report spin relaxation (T1) and coherence (T2) times for mobile electrons and natural quantum dots at a 28Si/SiO2 interface. Mobile electrons have short T1 and T2 of 0.3 us at 5 K. In line with predictions, confining electrons and cooling increases T1 to 0.8 ms at 350 mK. In contrast, T2 for quantum dots is around 10 us at 350 mK, increasing to 30 us when the dot density is reduced by a factor of two. The quantum dot T2 is shorter than T1, indicating that T2 is not controlled by T1 at 350 mK but is instead limited by an extrinsic mechanism. The evidence suggests that this extrinsic mechanism is an exchange interaction between electrons in neighboring dots. △ Less

Submitted 16 September, 2010; v1 submitted 15 December, 2009; originally announced December 2009.

Comments: Extended with more experiments and rewritten. 6 pages, 5 figures, to be submitted to Phys. Rev. B

Journal ref: Phys. Rev. B, 82, 195323 (2010)

Chiral Symmetry and Electron Spin Relaxation of Lithium Donors in Silicon

Authors: V. N. Smelyanskiy, A. G. Petukhov, A. M. Tyryshkin, S. A. Lyon, T. Schenkel, J. W. Ager, E. E. Haller

Abstract: We report theoretical and experimental studies of the longitudinal electron spin and orbital relaxation time of interstitial Li donors in $^{28}$Si. We predict that despite the near-degeneracy of the ground-state manifold the spin relaxation times are extremely long for the temperatures below 0.3 K. This prediction is based on a new finding of the chiral symmetry of the donor states, which presi… ▽ More We report theoretical and experimental studies of the longitudinal electron spin and orbital relaxation time of interstitial Li donors in $^{28}$Si. We predict that despite the near-degeneracy of the ground-state manifold the spin relaxation times are extremely long for the temperatures below 0.3 K. This prediction is based on a new finding of the chiral symmetry of the donor states, which presists in the presence of random strains and magnetic fields parallel to one of the cubic axes. Experimentally observed kinetics of magnetization reversal at 2.1 K and 4.5 K are in a very close agreement with the theory. To explain these kinetics we introduced a new mechanism of spin decoherence based on a combination of a small off-site displacement of the Li atom and an umklapp phonon process. Both these factors weakly break chiral symmetry and enable the long-term spin relaxation. △ Less

Submitted 24 July, 2008; originally announced July 2008.

Solid state quantum memory using the 31P nuclear spin

Authors: John J. L. Morton, Alexei M. Tyryshkin, Richard M. Brown, Shyam Shankar, Brendon W. Lovett, Arzhang Ardavan, Thomas Schenkel, Eugene E. Haller, Joel W. Ager, S. A. Lyon

Abstract: The transfer of information between different physical forms is a central theme in communication and computation, for example between processing entities and memory. Nowhere is this more crucial than in quantum computation, where great effort must be taken to protect the integrity of a fragile quantum bit. Nuclear spins are known to benefit from long coherence times compared to electron spins, b… ▽ More The transfer of information between different physical forms is a central theme in communication and computation, for example between processing entities and memory. Nowhere is this more crucial than in quantum computation, where great effort must be taken to protect the integrity of a fragile quantum bit. Nuclear spins are known to benefit from long coherence times compared to electron spins, but are slow to manipulate and suffer from weak thermal polarisation. A powerful model for quantum computation is thus one in which electron spins are used for processing and readout while nuclear spins are used for storage. Here we demonstrate the coherent transfer of a superposition state in an electron spin 'processing' qubit to a nuclear spin 'memory' qubit, using a combination of microwave and radiofrequency pulses applied to 31P donors in an isotopically pure 28Si crystal. The electron spin state can be stored in the nuclear spin on a timescale that is long compared with the electron decoherence time and then coherently transferred back to the electron spin, thus demonstrating the 31P nuclear spin as a solid-state quantum memory. The overall store/readout fidelity is about 90%, attributed to systematic imperfections in radiofrequency pulses which can be improved through the use of composite pulses. We apply dynamic decoupling to protect the nuclear spin quantum memory element from sources of decoherence. The coherence lifetime of the quantum memory element is found to exceed one second at 5.5K. △ Less

Submitted 30 June, 2008; v1 submitted 13 March, 2008; originally announced March 2008.

Comments: v2: Tomography added and storage of general initial states

Journal ref: Nature 455 1085 (2008)

Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors

Authors: C. C. Lo, J. Bokor, T. Schenkel, A. M. Tyryshkin, S. A. Lyon

Abstract: We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where the spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We di… ▽ More We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where the spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering as a mechanism for the readout of donor spin-states in silicon based quantum computers. △ Less

Submitted 6 November, 2007; v1 submitted 26 October, 2007; originally announced October 2007.

Comments: 14 pages, 3 figures. Correction made to figure3(b)

Spin resonance of 2D electrons in a large-area silicon MOSFET

Authors: S. Shankar, A. M. Tyryshkin, S. Avasthi, S. A. Lyon

Abstract: We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface. The signal and its intensity show a pronounced dependence on applied gate voltage. At gate voltages below the threshold of the MOSFET, the signal is fro… ▽ More We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface. The signal and its intensity show a pronounced dependence on applied gate voltage. At gate voltages below the threshold of the MOSFET, the signal is from weakly confined, isolated electrons as evidenced by the Curie-like temperature dependence of its intensity. The situation above threshold appears more complicated. These large-area MOSFETs provide the capability to controllably tune from insulating to conducting regimes by adjusting the gate voltage while monitoring the state of the 2D electron spins spectroscopically. △ Less

Submitted 5 October, 2007; originally announced October 2007.

Comments: 7 pages, 3 figures, submitted to Physica E special edition for EPS2DS-17

Journal ref: Physica E, Vol. 40, Issue 5, March 2008, Pages 1659-1661

Environmental effects on electron spin relaxation in N@C60

Authors: John J. L. Morton, Alexei M. Tyryshkin, Arzhang Ardavan, Kyriakos Porfyrakis, S. A. Lyon, G. Andrew D. Briggs

Abstract: We examine environmental effects of surrounding nuclear spins on the electron spin relaxation of the N@C60 molecule (which consists of a nitrogen atom at the centre of a fullerene cage). Using dilute solutions of N@C60 in regular and deuterated toluene, we observe and model the effect of translational diffusion of nuclear spins of the solvent molecules on the N@C60 electron spin relaxation times… ▽ More We examine environmental effects of surrounding nuclear spins on the electron spin relaxation of the N@C60 molecule (which consists of a nitrogen atom at the centre of a fullerene cage). Using dilute solutions of N@C60 in regular and deuterated toluene, we observe and model the effect of translational diffusion of nuclear spins of the solvent molecules on the N@C60 electron spin relaxation times. We also study spin relaxation in frozen solutions of N@C60 in CS2, to which small quantities of a glassing agent, S2Cl2 are added. At low temperatures, spin relaxation is caused by spectral diffusion of surrounding nuclear 35Cl and 37Cl spins in the S2Cl2, but nevertheless, at 20 K, T2 times as long as 0.23 ms are observed. △ Less

Submitted 15 April, 2007; v1 submitted 9 November, 2006; originally announced November 2006.

Comments: 7 pages, 6 figures

Will spin-relaxation times in molecular magnets permit quantum information processing?

Authors: Arzhang Ardavan, Olivier Rival, John J. L. Morton, Stephen J. Blundell, Alexei M. Tyryshkin, Grigore A. Timco, Richard E. P. Winnpenny

Abstract: Using X-band pulsed electron spin resonance, we report the intrinsic spin-lattice ($T_1$) and phase coherence ($T_2$) relaxation times in molecular nanomagnets for the first time. In Cr$_7M$ heterometallic wheels, with $M$ = Ni and Mn, phase coherence relaxation is dominated by the coupling of the electron spin to protons within the molecule. In deuterated samples $T_2$ reaches 3 $μ$s at low tem… ▽ More Using X-band pulsed electron spin resonance, we report the intrinsic spin-lattice ($T_1$) and phase coherence ($T_2$) relaxation times in molecular nanomagnets for the first time. In Cr$_7M$ heterometallic wheels, with $M$ = Ni and Mn, phase coherence relaxation is dominated by the coupling of the electron spin to protons within the molecule. In deuterated samples $T_2$ reaches 3 $μ$s at low temperatures, which is several orders of magnitude longer than the duration of spin manipulations, satisfying a prerequisite for the deployment of molecular nanomagnets in quantum information applications. △ Less

Submitted 16 January, 2007; v1 submitted 19 September, 2006; originally announced September 2006.

Comments: 4 pages, 3 figures, in press at Physical Review Letters

Davies ENDOR revisited: Enhanced sensitivity and nuclear spin relaxation

Authors: Alexei M. Tyryshkin, John J. L. Morton, Arzhang Ardavan, S. A. Lyon

Abstract: Over the past 50 years, electron-nuclear double resonance (ENDOR) has become a fairly ubiquitous spectroscopic technique, allowing the study of spin transitions for nuclei which are coupled to electron spins. However, the low spin number sensitivity of the technique continues to pose serious limitations. Here we demonstrate that signal intensity in a pulsed Davies ENDOR experiment depends strong… ▽ More Over the past 50 years, electron-nuclear double resonance (ENDOR) has become a fairly ubiquitous spectroscopic technique, allowing the study of spin transitions for nuclei which are coupled to electron spins. However, the low spin number sensitivity of the technique continues to pose serious limitations. Here we demonstrate that signal intensity in a pulsed Davies ENDOR experiment depends strongly on the nuclear relaxation time T1n, and can be severely reduced for long T1n. We suggest a development of the original Davies ENDOR sequence that overcomes this limitation, thus offering dramatically enhanced signal intensity and spectral resolution. Finally, we observe that the sensitivity of the original Davies method to T1n can be exploited to measure nuclear relaxation, as we demonstrate for phosphorous donors in silicon and for the endohedral fullerene N@C60 in CS2. △ Less

Submitted 10 March, 2006; originally announced March 2006.

Stark Tuning of Donor Electron Spins in Silicon

Authors: Forrest R. Bradbury, Alexei M. Tyryshkin, Guillaume Sabouret, Jeff Bokor, Thomas Schenkel, Stephen A. Lyon

Abstract: We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-factor. The hyperfine term p… ▽ More We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-factor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term is expected to dominate at higher magnetic fields. A significant linear Stark effect is also resolved presumably arising from strain. △ Less

Submitted 12 March, 2006; originally announced March 2006.

Comments: 10 pages, 4 figures, to be submitted to PRL

Journal ref: PRL 97, 176404 (2006)

Bang-bang control of fullerene qubits using ultra-fast phase gates

Authors: John J. L. Morton, Alexei M. Tyryshkin, Arzhang Ardavan, Simon C. Benjamin, Kyriakos Porfyrakis, S. A. Lyon, G. Andrew D. Briggs

Abstract: Quantum mechanics permits an entity, such as an atom, to exist in a superposition of multiple states simultaneously. Quantum information processing (QIP) harnesses this profound phenomenon to manipulate information in radically new ways. A fundamental challenge in all QIP technologies is the corruption of superposition in a quantum bit (qubit) through interaction with its environment. Quantum ba… ▽ More Quantum mechanics permits an entity, such as an atom, to exist in a superposition of multiple states simultaneously. Quantum information processing (QIP) harnesses this profound phenomenon to manipulate information in radically new ways. A fundamental challenge in all QIP technologies is the corruption of superposition in a quantum bit (qubit) through interaction with its environment. Quantum bang-bang control provides a solution by repeatedly applying `kicks' to a qubit, thus disrupting an environmental interaction. However, the speed and precision required for the kick operations has presented an obstacle to experimental realization. Here we demonstrate a phase gate of unprecedented speed on a nuclear spin qubit in a fullerene molecule (N@C60), and use it to bang-bang decouple the qubit from a strong environmental interaction. We can thus trap the qubit in closed cycles on the Bloch sphere, or lock it in a given state for an arbitrary period. Our procedure uses operations on a second qubit, an electron spin, in order to generate an arbitrary phase on the nuclear qubit. We anticipate the approach will be vital for QIP technologies, especially at the molecular scale where other strategies, such as electrode switching, are unfeasible. △ Less

Submitted 30 January, 2006; v1 submitted 1 January, 2006; originally announced January 2006.

Journal ref: Nature Physics 2, 40-43 (2006)

Coherence of Spin Qubits in Silicon

Authors: A. M. Tyryshkin, J. J. L. Morton, S. C. Benjamin, A. Ardavan, G. A. D. Briggs, J. W. Ager, S. A. Lyon

Abstract: Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control of electric fields and charge transport are required. Conventional semiconductor electronics is built upon these capabilities and has demonstrated scaling to l… ▽ More Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control of electric fields and charge transport are required. Conventional semiconductor electronics is built upon these capabilities and has demonstrated scaling to large complicated arrays of interconnected devices. However, the requirements for a quantum computer are very different from those for classical computation, and it is not immediately obvious how best to build one in a semiconductor. One possible approach is to use spins as qubits: of nuclei, of electrons, or both in combination. Long qubit coherence times are a prerequisite for quantum computing, and in this paper we will discuss measurements of spin coherence in silicon. The results are encouraging - both electrons bound to donors and the donor nuclei exhibit low decoherence under the right circumstances. Doped silicon thus appears to pass the first test on the road to a quantum computer. △ Less

Submitted 29 December, 2005; originally announced December 2005.

Comments: Submitted to J Cond Matter on Nov 15th, 2005

Towards a fullerene-based quantum computer

Authors: Simon C Benjamin, Arzhang Ardavan, G Andrew D Briggs, David A Britz, Daniel Gunlycke, John Jefferson, Mark A G Jones, David F Leigh, Brendon W Lovett, Andrei N Khlobystov, S A Lyon, John J L Morton, Kyriakos Porfyrakis, Mark R Sambrook, Alexei M Tyryshkin

Abstract: Molecular structures appear to be natural candidates for a quantum technology: individual atoms can support quantum superpositions for long periods, and such atoms can in principle be embedded in a permanent molecular scaffolding to form an array. This would be true nanotechnology, with dimensions of order of a nanometre. However, the challenges of realising such a vision are immense. One must i… ▽ More Molecular structures appear to be natural candidates for a quantum technology: individual atoms can support quantum superpositions for long periods, and such atoms can in principle be embedded in a permanent molecular scaffolding to form an array. This would be true nanotechnology, with dimensions of order of a nanometre. However, the challenges of realising such a vision are immense. One must identify a suitable elementary unit and demonstrate its merits for qubit storage and manipulation, including input / output. These units must then be formed into large arrays corresponding to an functional quantum architecture, including a mechanism for gate operations. Here we report our efforts, both experimental and theoretical, to create such a technology based on endohedral fullerenes or 'buckyballs'. We describe our successes with respect to these criteria, along with the obstacles we are currently facing and the questions that remain to be addressed. △ Less

Submitted 21 November, 2005; originally announced November 2005.

Comments: 20 pages, 13 figs, single column format

Journal ref: Journal of Physics: Condensed Matter, Volume 18, Issue 21, pp. S867-S883 (2006).

Electron spin relaxation of N@C60 in CS2

Authors: John J. L. Morton, Alexei M. Tyryshkin, Arzhang Ardavan, Kyriakos Porfyrakis, S. A. Lyon, G. Andrew D. Briggs

Abstract: We examine the temperature dependence of the relaxation times of the molecules N@C60 and N@C70 (which comprise atomic nitrogen trapped within a carbon cage) in liquid CS2 solution. The results are inconsistent with the fluctuating zero field splitting (ZFS) mechanism, which is commonly invoked to explain electron spin relaxation for S > 1/2 spins in liquid solution, and is the mechanism postulat… ▽ More We examine the temperature dependence of the relaxation times of the molecules N@C60 and N@C70 (which comprise atomic nitrogen trapped within a carbon cage) in liquid CS2 solution. The results are inconsistent with the fluctuating zero field splitting (ZFS) mechanism, which is commonly invoked to explain electron spin relaxation for S > 1/2 spins in liquid solution, and is the mechanism postulated in the literature for these systems. Instead, we find a clear Arrhenius temperature dependence for N@C60, indicating the spin relaxation is driven primarily by an Orbach process. For the asymmetric N@C70 molecule, which has a permanent non-zero ZFS, we resolve an additional relaxation mechanism caused by the rapid reorientation of its ZFS. We also report the longest coherence time (T2) ever observed for a molecular electron spin, being 0.25 ms at 170K. △ Less

Submitted 5 January, 2006; v1 submitted 24 October, 2005; originally announced October 2005.

Comments: 6 pages, 6 figures V2: Updated to published version

Journal ref: J. Chem. Phys. 124, 014508 (2006)

Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon

Authors: T. Schenkel, A. M. Tyryshkin, R. de Sousa, K. B. Whaley, J. Bokor, J. A. Liddle, A. Persaud, J. Shangkuan, I. Chakarov, S. A. Lyon

Abstract: We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profiles peak… ▽ More We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant depths, and the interface quality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profiles peaking 50 nm below a Si/SiO2 interface, increasing to 0.75 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins. △ Less

Submitted 31 October, 2005; v1 submitted 13 July, 2005; originally announced July 2005.

High Fidelity Single Qubit Operations using Pulsed EPR

Authors: John J. L. Morton, Alexei M. Tyryshkin, Arzhang Ardavan, Kyriakos Porfyrakis, S. A. Lyon, G. Andrew D. Briggs

Abstract: Systematic errors in spin rotation operations using simple RF pulses place severe limitations on the usefulness of the pulsed magnetic resonance methods in quantum computing applications. In particular, the fidelity of quantum logic operations performed on electron spin qubits falls well below the threshold for the application of quantum algorithms. Using three independent techniques, we demonst… ▽ More Systematic errors in spin rotation operations using simple RF pulses place severe limitations on the usefulness of the pulsed magnetic resonance methods in quantum computing applications. In particular, the fidelity of quantum logic operations performed on electron spin qubits falls well below the threshold for the application of quantum algorithms. Using three independent techniques, we demonstrate the use of composite pulses to improve this fidelity by several orders of magnitude. The observed high-fidelity operations are limited by pulse phase errors, but nevertheless fall within the limits required for the application of quantum error correction. △ Less

Submitted 10 October, 2005; v1 submitted 18 February, 2005; originally announced February 2005.

Comments: 4 pages, 3 figures To appear in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 95, 200501 (2005)

A new mechanism for electron spin echo envelope modulation

Authors: John J. L. Morton, Alexei M. Tyryshkin, Arzhang Ardavan, Kyriakos Porfyrakis, Stephen A. Lyon, G. Andrew D. Briggs

Abstract: Electron spin echo envelope modulation (ESEEM) has been observed for the first time from a coupled hetero-spin pair of electron and nucleus in liquid solution. Previously, modulation effects in spin echo experiments have only been described in liquid solutions for a coupled pair of homonuclear spins in NMR or a pair of resonant electron spins in EPR. We observe low-frequency ESEEM (26 and 52 kHz… ▽ More Electron spin echo envelope modulation (ESEEM) has been observed for the first time from a coupled hetero-spin pair of electron and nucleus in liquid solution. Previously, modulation effects in spin echo experiments have only been described in liquid solutions for a coupled pair of homonuclear spins in NMR or a pair of resonant electron spins in EPR. We observe low-frequency ESEEM (26 and 52 kHz) due to a new mechanism present for any electron spin with S>1/2 that is hyperfine coupled to a nuclear spin. In our case these are electron spin (S=3/2) and nuclear spin (I=1) in the endohedral fullerene N@C60. The modulation is shown to arise from second order effects in the isotropic hyperfine coupling of an electron and 14N nucleus. △ Less

Submitted 1 December, 2004; originally announced December 2004.

Comments: 15 pages, 4 figures

Journal ref: J. Chem. Phys. 122, 174504 (2005)

Electron spin coherence in Si/SiGe quantum wells

Authors: J. L. Truitt, K. A. Slinker, K. L. M. Lewis, D. E. Savage, Charles Tahan, L. J. Klein, Robert Joynt, M. G. Lagally, D. W. van der Weide, S. N. Coppersmith, M. A. Eriksson, A. M. Tyryshkin, J. O. Chu, P. M. Mooney

Abstract: The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measur… ▽ More The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measured from transport experiments. A pronounced dependence of $T_2^*$ on the orientation of the applied magnetic field with respect to 2DEG layer is found which is not consistent with that expected from any mechanism described in the literature. △ Less

Submitted 29 November, 2004; originally announced November 2004.

Comments: 4 pages, 4 figures, 1 table