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Enhanced Non-linear Response by Manipulating the Dirac Point in the (111) LaTiO$_3$/SrTiO$_3$ Interface
Authors:
G. Tuvia,
A. Burshtein,
I. Silber,
A. Aharony,
O. Entin-Wohlman,
M. Goldstein,
Y. Dagan
Abstract:
Tunable spin-orbit interaction (SOI) is an important feature for future spin-based devices. In the presence of a magnetic field, SOI induces an asymmetry in the energy bands, which can produce non-linear transport effects ($V\sim I^2$). Here, we focus on such effects to study the role of SOI in the (111) LaTiO$_3$/SrTiO$_3$ interface. This system is a convenient platform for understanding the role…
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Tunable spin-orbit interaction (SOI) is an important feature for future spin-based devices. In the presence of a magnetic field, SOI induces an asymmetry in the energy bands, which can produce non-linear transport effects ($V\sim I^2$). Here, we focus on such effects to study the role of SOI in the (111) LaTiO$_3$/SrTiO$_3$ interface. This system is a convenient platform for understanding the role of SOI since it exhibits a single-band Hall-response through the entire gate-voltage range studied. We report a pronounced rise in the non-linear resistance at a critical in-plane field $H_{cr}$. This rise disappears with a small out-of-plane field. We explain these results by considering the location of the Dirac point formed at the crossing of the spin-split energy bands. An in-plane magnetic field pushes this point outside of the Fermi surface, and consequently changes the symmetry of the Fermi contours and intensifies the non-linear transport. An out-of-plane magnetic field opens a gap at the Dirac point, thereby significantly diminishing the non-linear effects. We propose that magnetoresistance effects previously reported in interfaces with SOI could be comprehended within our suggested scenario.
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Submitted 14 September, 2023;
originally announced September 2023.
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Tunable Magnetic Scattering and Ferroelectric Switching at the LaAlO$_3$/EuTiO$_3$/Sr$_{0.99}$Ca$_{0.01}$TiO$_3$ Interface
Authors:
Gal Tuvia,
Sapir Weitz Sobelman,
Shay Sandik,
Beena Kalisky,
Yoram Dagan
Abstract:
Ferroelectric and ferromagnetic orders rarely coexist, and magnetoelectric coupling is even more scarce. A possible avenue for combining these orders is by interface design, where orders formed at the constituent materials can overlap and interact. Using a combination of magneto-transport and scanning SQUID measurements, we explore the interactions between ferroelectricity, magnetism, and the 2D e…
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Ferroelectric and ferromagnetic orders rarely coexist, and magnetoelectric coupling is even more scarce. A possible avenue for combining these orders is by interface design, where orders formed at the constituent materials can overlap and interact. Using a combination of magneto-transport and scanning SQUID measurements, we explore the interactions between ferroelectricity, magnetism, and the 2D electron system (2DES) formed at the novel LaAlO$_3$/EuTiO$_3$/Sr$_{0.99}$Ca$_{0.01}$TiO$_3$ heterostructure. We find that the electrons at the interface experience magnetic scattering appearing along with a diverging Curie-Weiss-type behaviour in the EuTiO$_3$ layer. The 2DES is also affected by the switchable ferroelectric polarization at the Sr$_{0.99}$Ca$_{0.01}$TiO$_3$ bulk. While the 2DES interacts with both magnetism and ferroelectricity, we show that the presence of the conducting electrons has no effect on magnetization in the EuTiO$_3$ layer. Our results provide a first step towards realizing a new multiferroic system where magnetism and ferroelectricity can interact via an intermediate conducting layer.
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Submitted 10 April, 2022;
originally announced April 2022.
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Concomitant appearance of conductivity and superconductivity in (111)LaAlO3/SrTiO3 interface with metal cap**
Authors:
R. S. Bisht,
M. Mograbi,
P. K. Rout,
G. Tuvia,
Y. Dagan,
Hyeok Yoon,
A. G. Swartz,
H. Y. Hwang,
L. L. Li,
R. Pentcheva
Abstract:
In polar-oxide interfaces, a certain number of monolayers (ML) is needed for conductivity to appear. This threshold for conductivity is explained by accumulating sufficient electric potential to initiate charge transfer to the interface. Here we study experimentally and theoretically the (111) SrTiO3/LaAlO3 interface where a critical thickness, tc, of nine epitaxial LaAlO3 ML is required to turn t…
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In polar-oxide interfaces, a certain number of monolayers (ML) is needed for conductivity to appear. This threshold for conductivity is explained by accumulating sufficient electric potential to initiate charge transfer to the interface. Here we study experimentally and theoretically the (111) SrTiO3/LaAlO3 interface where a critical thickness, tc, of nine epitaxial LaAlO3 ML is required to turn the interface from insulating to conducting and even superconducting. We show that tc decreases to 3ML when depositing a cobalt over-layer (cap**) and 6ML for platinum cap**. The latter result contrasts with the (100) interface, where platinum cap** increases tc beyond the bare interface. The observed threshold for conductivity for the bare and the metal-capped interfaces is confirmed by our density functional theory calculations. Interestingly, for (111) SrTiO3/LaAlO3/Metal interfaces, conductivity appears concomitantly with superconductivity in contrast with the (100) SrTiO3/LaAlO3/Metal interfaces where tc is smaller than the critical thickness for superconductivity. We attribute this dissimilarity to the different orbital polarization of e'g for the (111) versus dxy for the (001) interface.
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Submitted 19 July, 2021; v1 submitted 14 February, 2021;
originally announced February 2021.
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Tunneling study in granular aluminum near the Mott metal-to-insulator transition
Authors:
Aviv Glezer Moshe,
Gal Tuvia,
Shilo Avraham,
Eli Farber,
Guy Deutscher
Abstract:
We find excellent agreement between tunneling and optical conductivity gap values in superconducting granular aluminum films, up to the metal-to-insulator transition. This behavior, in strong contrast with that recently reported in atomically disordered samples for which the optical gap becomes smaller than the tunneling gap, suggests that disorder is not at the origin of the transition. The large…
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We find excellent agreement between tunneling and optical conductivity gap values in superconducting granular aluminum films, up to the metal-to-insulator transition. This behavior, in strong contrast with that recently reported in atomically disordered samples for which the optical gap becomes smaller than the tunneling gap, suggests that disorder is not at the origin of the transition. The large increase seen in the strong coupling ratio and a finite value of the gap at T_c near the metal-to-insulator transition are consistent with a BCS to BEC crossover.
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Submitted 29 July, 2021; v1 submitted 13 January, 2021;
originally announced January 2021.
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Ferroelectric Exchange Bias Affects Interfacial Electronic States
Authors:
Gal Tuvia,
Yiftach Frenkel,
Prasanna K. Rout,
Itai Silber,
Beena Kalisky,
Yoram Dagan
Abstract:
In polar oxide interfaces phenomena such as conductivity, superconductivity, magnetism, one-dimensional conductivity and Quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces can affect the superconducting properties and shed light on the mutual effects between the polar oxide and the ferroelectric oxide. Here we study the interface b…
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In polar oxide interfaces phenomena such as conductivity, superconductivity, magnetism, one-dimensional conductivity and Quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces can affect the superconducting properties and shed light on the mutual effects between the polar oxide and the ferroelectric oxide. Here we study the interface between the polar oxide LaAlO3 and the ferroelectric Ca-doped SrTiO3 by means of electrical transport combined with local imaging of the current flow with the use of scanning Superconducting Quantum Interference Device (SQUID). Anomalous behavior of the interface resistivity is observed at low temperatures. The scanning SQUID maps of the current flow suggest that this behavior originates from an intrinsic bias induced by the polar LaAlO3 layer. Our data imply that the intrinsic bias combined with ferroelectricity constrain the possible structural domain tiling near the interface. We recommend the use of this intrinsic bias as a method of controlling and tuning the initial state of ferroelectric materials by design of the polar structure. The hysteretic dependence of the normal and the superconducting state properties on gate voltage can be utilized in multifaceted controllable memory devices.
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Submitted 3 July, 2020;
originally announced July 2020.
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Symmetry and correlation effects on band structure explain the anomalous transport properties of (111) LaAlO$_3$/SrTiO$_3$
Authors:
Udit Khanna,
Prasanna K. Rout,
Michael Mograbi,
Gal Tuvia,
Inge Leermakers,
Uli Zeitler,
Yoram Dagan,
Moshe Goldstein
Abstract:
The interface between the two insulating oxides SrTiO$_3$ and LaAlO$_3$ gives rise to a two-dimensional electron system with intriguing transport phenomena, including superconductivity, which are controllable by a gate. Previous measurements on the (001) interface have shown that the superconducting critical temperature, the Hall density, and the frequency of quantum oscillations, vary nonmonotoni…
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The interface between the two insulating oxides SrTiO$_3$ and LaAlO$_3$ gives rise to a two-dimensional electron system with intriguing transport phenomena, including superconductivity, which are controllable by a gate. Previous measurements on the (001) interface have shown that the superconducting critical temperature, the Hall density, and the frequency of quantum oscillations, vary nonmonotonically and in a correlated fashion with the gate voltage. In this paper we experimentally demonstrate that the (111) interface features a qualitatively distinct behavior, in which the frequency of Shubnikov-de Haas oscillations changes monotonically, while the variation of other properties is nonmonotonic albeit uncorrelated. We develop a theoretical model, incorporating the different symmetries of these interfaces as well as electronic-correlation-induced band competition. We show that the latter dominates at (001), leading to similar nonmonotonicity in all observables, while the former is more important at (111), giving rise to highly curved Fermi contours, and accounting for all its anomalous transport measurements.
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Submitted 29 July, 2019; v1 submitted 30 January, 2019;
originally announced January 2019.
