-
Plasmonic waveguide-integrated nanowire laser
Authors:
Esteban Bermúdez-Ureña,
Gozde Tutuncuoglu,
Javier Cuerda,
Cameron L. C. Smith,
Jorge Bravo-Abad,
Sergey I. Bozhevolnyi,
Anna Fontcuberta i Morral,
Francisco J. García-Vidal,
Romain Quidant
Abstract:
Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing, to data communication technologies. Despite significant advances in their fundamental aspects, the integration within scalable photon…
▽ More
Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing, to data communication technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic waveguides. We present experimental evidence of the lasing emission and coupling into the propagating modes of the V-grooves, enabling on-chip routing of coherent and sub-diffraction confined light with room temperature operation. Theoretical considerations suggest that the observed lasing is enabled by a waveguide hybrid photonic-plasmonic mode. This work represents a major advance towards the realization of application-oriented photonic circuits with integrated nanolaser sources.
△ Less
Submitted 22 August, 2018;
originally announced August 2018.
-
Template-assisted scalable nanowire networks
Authors:
Martin Friedl,
Kris Cerveny,
Pirmin Weigele,
Gozde Tutuncuoglu,
Sara Martí-Sánchez,
Chunyi Huang,
Taras Patlatiuk,
Heidi Potts,
Zhiyuan Sun,
Megan O. Hill,
Lucas Güniat,
Wonjong Kim,
Mahdi Zamani,
Vladimir G. Dubrovskii,
Jordi Arbiol,
Lincoln J. Lauhon,
Dominik Zumbuhl,
Anna Fontcuberta i Morral
Abstract:
Topological qubits based on Majorana fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires (NWs) are a promising medium for hosting these kinds of qubits, though branched NWs are needed to perform qubit manipulations. Here we report gold-free templated growth of III-V NWs by molecula…
▽ More
Topological qubits based on Majorana fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires (NWs) are a promising medium for hosting these kinds of qubits, though branched NWs are needed to perform qubit manipulations. Here we report gold-free templated growth of III-V NWs by molecular beam epitaxy using an approach that enables patternable and highly regular branched NW arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes (NMs) yielding laterally-oriented, low-defect InAs and InGaAs NWs whose shapes are determined by surface and strain energy minimization. By controlling NM width and growth time, we demonstrate the formation of compositionally graded NWs with cross-sections less than 50 nm. Scaling the NWs below 20 nm leads to the formation of homogenous InGaAs NWs which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance towards scalable topological quantum computing.
△ Less
Submitted 16 April, 2018; v1 submitted 1 March, 2018;
originally announced March 2018.
-
Coherent two-mode dynamics of a nanowire force sensor
Authors:
Floris R. Braakman,
Nicola Rossi,
Gözde Tütüncüoglu,
Anna Fontcuberta i Morral,
Martino Poggio
Abstract:
Classically coherent dynamics analogous to those of quantum two-level systems are studied in the setting of force sensing. We demonstrate quantitative control over the coupling between two orthogonal mechanical modes of a nanowire cantilever, through measurement of avoided crossings as we deterministically position the nanowire inside an electric field. Furthermore, we demonstrate Rabi oscillation…
▽ More
Classically coherent dynamics analogous to those of quantum two-level systems are studied in the setting of force sensing. We demonstrate quantitative control over the coupling between two orthogonal mechanical modes of a nanowire cantilever, through measurement of avoided crossings as we deterministically position the nanowire inside an electric field. Furthermore, we demonstrate Rabi oscillations between the two mechanical modes in the strong coupling regime. These results give prospects of implementing coherent two-mode control techniques for force sensing signal enhancement.
△ Less
Submitted 2 February, 2018;
originally announced February 2018.
-
Observation of vortex-nucleated magnetization reversal in individual ferromagnetic nanotubes
Authors:
A. Mehlin,
B. Gross,
M. Wyss,
T. Schefer,
G. Tütüncüoglu,
F. Heimbach,
A. Fontcuberta i Morral,
D. Grundler,
M. Poggio
Abstract:
The reversal of a uniform axial magnetization in a ferromagnetic nanotube (FNT) has been predicted to nucleate and propagate through vortex domains forming at the ends. In dynamic cantilever magnetometry measurements of individual FNTs, we identify the entry of these vortices as a function of applied magnetic field and show that they mark the nucleation of magnetization reversal. We find that the…
▽ More
The reversal of a uniform axial magnetization in a ferromagnetic nanotube (FNT) has been predicted to nucleate and propagate through vortex domains forming at the ends. In dynamic cantilever magnetometry measurements of individual FNTs, we identify the entry of these vortices as a function of applied magnetic field and show that they mark the nucleation of magnetization reversal. We find that the entry field depends sensitively on the angle between the end surface of the FNT and the applied field. Micromagnetic simulations substantiate the experimental results and highlight the importance of the ends in determining the reversal process. The control over end vortex formation enabled by our findings is promising for the production of FNTs with tailored reversal properties.
△ Less
Submitted 14 November, 2017;
originally announced November 2017.
-
Imaging stray magnetic field of individual ferromagnetic nanotubes
Authors:
D. Vasyukov,
L. Ceccarelli,
M. Wyss,
B. Gross,
A. Schwarb,
A. Mehlin,
N. Rossi,
G. Tütüncüoglu,
F. Heimbach,
R. R. Zamani,
A. Kovács,
A. Fontcuberta i Morral,
D. Grundler,
M. Poggio
Abstract:
We use a scanning nanometer-scale superconducting quantum interference device to map the stray magnetic field produced by individual ferromagnetic nanotubes (FNTs) as a function of applied magnetic field. The images are taken as each FNT is led through magnetic reversal and are compared with micromagnetic simulations, which correspond to specific magnetization configurations. In magnetic fields ap…
▽ More
We use a scanning nanometer-scale superconducting quantum interference device to map the stray magnetic field produced by individual ferromagnetic nanotubes (FNTs) as a function of applied magnetic field. The images are taken as each FNT is led through magnetic reversal and are compared with micromagnetic simulations, which correspond to specific magnetization configurations. In magnetic fields applied perpendicular to the FNT long axis, their magnetization appears to reverse through vortex states, i.e.\ configurations with vortex end domains or -- in the case of a sufficiently short FNT -- with a single global vortex. Geometrical imperfections in the samples and the resulting distortion of idealized mangetization configurations influence the measured stray-field patterns.
△ Less
Submitted 27 September, 2017;
originally announced September 2017.
-
Revealing large-scale homogeneity and trace impurity sensitivity of GaAs nanoscale membranes
Authors:
Z. Yang,
A. Surrente,
G. Tutuncuoglu,
K. Galkowski,
M. Cazaban-Carraze,
F. Amaduzzi,
P. Leroux,
D. K. Maude,
A. Fontcuberta i Morral,
P. Plochocka
Abstract:
III-V nanostructures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical properties of MBE grown GaAs nanomembranes we highlight several features that bring them closer to large scale applications. Uncapped membranes exhibit a very hi…
▽ More
III-V nanostructures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical properties of MBE grown GaAs nanomembranes we highlight several features that bring them closer to large scale applications. Uncapped membranes exhibit a very high optical quality, expressed by extremely narrow neutral exciton emission, allowing the resolution of the more complex excitonic structure for the first time. Cap** of the membranes with an AlGaAs shell results in a strong increase of emission intensity but also to a shift and broadening of the exciton peak. This is attributed to the existence of impurities in the shell, beyond MBE-grade quality, showing the high sensitivity of these structures to the presence of impurities. Finally, emission properties are identical at the sub-micron and sub-millimeter scale, demonstrating the potential of these structures for large scale applications.
△ Less
Submitted 27 April, 2017;
originally announced April 2017.
-
Imaging magnetic vortex configurations in ferromagnetic nanotubes
Authors:
M. Wyss,
A. Mehlin,
B. Gross,
A. Buchter,
A. Farhan,
M. Buzzi,
A. Kleibert,
G. Tütüncüoglu,
F. Heimbach,
A. Fontcuberta i Morral,
D. Grundler,
M. Poggio
Abstract:
We image the remnant magnetization configurations of CoFeB and permalloy nanotubes (NTs) using x-ray magnetic circular dichroism photo-emission electron microscopy. The images provide direct evidence for flux-closure configurations, including a global vortex state, in which magnetization points circumferentially around the NT axis. Furthermore, micromagnetic simulations predict and measurements co…
▽ More
We image the remnant magnetization configurations of CoFeB and permalloy nanotubes (NTs) using x-ray magnetic circular dichroism photo-emission electron microscopy. The images provide direct evidence for flux-closure configurations, including a global vortex state, in which magnetization points circumferentially around the NT axis. Furthermore, micromagnetic simulations predict and measurements confirm that vortex states can be programmed as the equilibrium remnant magnetization configurations by reducing the NT aspect ratio.
△ Less
Submitted 6 January, 2017;
originally announced January 2017.
-
Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si
Authors:
Jelena Vukajlovic-Plestina,
Vladimir G. Dubrovskii,
Gözde Tütüncuoǧlu,
Heidi Potts,
Ruben Ricca,
Frank Meyer,
Federico Matteini,
Jean-Baptiste Leran,
Anna Fontcuberta i Morral
Abstract:
Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires on SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted…
▽ More
Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires on SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena.
△ Less
Submitted 22 August, 2016;
originally announced August 2016.
-
Vectorial scanning force microscopy using a nanowire sensor
Authors:
N. Rossi,
F. R. Braakman,
D. Cadeddu,
D. Vasyukov,
G. Tütüncüoglu,
A. Fontcuberta i Morral,
M. Poggio
Abstract:
Self-assembled nanowire (NW) crystals can be grown into nearly defect-free nanomechanical resonators with exceptional properties, including small motional mass, high resonant frequency, and low dissipation. Furthermore, by virtue of slight asymmetries in geometry, a NW's flexural modes are split into doublets oscillating along orthogonal axes. These characteristics make bottom-up grown NWs extreme…
▽ More
Self-assembled nanowire (NW) crystals can be grown into nearly defect-free nanomechanical resonators with exceptional properties, including small motional mass, high resonant frequency, and low dissipation. Furthermore, by virtue of slight asymmetries in geometry, a NW's flexural modes are split into doublets oscillating along orthogonal axes. These characteristics make bottom-up grown NWs extremely sensitive vectorial force sensors. Here, taking advantage of its adaptability as a scanning probe, we use a single NW to image a sample surface. By monitoring the frequency shift and direction of oscillation of both modes as we scan above the surface, we construct a map of all spatial tip-sample force derivatives in the plane. Finally, we use the NW to image electric force fields distinguishing between forces arising from the NW charge and polarizability. This universally applicable technique enables a form of atomic force microscopy particularly suited to map** the size and direction of weak tip-sample forces.
△ Less
Submitted 4 April, 2016;
originally announced April 2016.
-
Nonlinear motion and mechanical mixing in as-grown GaAs nanowires
Authors:
F. R. Braakman,
D. Cadeddu,
G. Tütüncüoglu,
F. Matteini,
D. Rüffer,
A. Fontcuberta i Morral,
M. Poggio
Abstract:
We report nonlinear behavior in the motion of driven nanowire cantilevers. The nonlinearity can be described by the Duffing equation and is used to demonstrate mechanical mixing of two distinct excitation frequencies. Furthermore, we demonstrate that the nonlinearity can be used to amplify a signal at a frequency close to the mechanical resonance of the nanowire oscillator. Up to 26 dB of amplitud…
▽ More
We report nonlinear behavior in the motion of driven nanowire cantilevers. The nonlinearity can be described by the Duffing equation and is used to demonstrate mechanical mixing of two distinct excitation frequencies. Furthermore, we demonstrate that the nonlinearity can be used to amplify a signal at a frequency close to the mechanical resonance of the nanowire oscillator. Up to 26 dB of amplitude gain are demonstrated in this way.
△ Less
Submitted 23 June, 2014;
originally announced June 2014.
-
Untangling the role of oxide in Ga-assisted growth of GaAs nanowires on Si substrates
Authors:
F. Matteini,
G. Tutuncuoglu,
D. Rüffer,
E. Alarcon-Llado,
A. Fontcuberta i Morral
Abstract:
The influence of the oxide in Ga-assisted growth of GaAs nanowires on Si substrates is investigated. Three different types of oxides with different structure and chemistry are considered. We observe that the critical oxide thicknesses needed for achieving nanowire growth depends on the nature of oxide and how it is processed. Additionally, we find that different growth conditions such as temperatu…
▽ More
The influence of the oxide in Ga-assisted growth of GaAs nanowires on Si substrates is investigated. Three different types of oxides with different structure and chemistry are considered. We observe that the critical oxide thicknesses needed for achieving nanowire growth depends on the nature of oxide and how it is processed. Additionally, we find that different growth conditions such as temperature and Ga rate are needed for successful nanowire growth on different oxides. We generalize the results in terms of the characteristics of the oxides such as surface roughness, stoichiometry and thickness. These results constitute a step further towards the integration of GaAs technology on the Si platform.
△ Less
Submitted 23 July, 2013;
originally announced July 2013.
