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Intercalation-induced states at the Fermi level and the coupling of intercalated magnetic ions to conducting layers in Ni$_{1/3}$NbS$_2$
Authors:
Yuki Utsumi Boucher,
Izabela Biało,
Mateusz A. Gala,
Wojciech Tabiś,
Marcin Rosmus,
Natalia Olszowska,
Jacek J. Kolodziej,
Bruno Gudac,
Mario Novak,
Naveen Kumar Chogondahalli Muniraju,
Ivo Batistić,
Neven Barišić,
Petar Popčević,
Eduard Tutiš
Abstract:
The magnetic sublayers introduced by intercalation into the host transition-metal dichalcogenide (TMD) are known to produce various magnetic states. The magnetic sublayers and their magnetic ordering strongly modify the electronic coupling between layers of the host compound. Understanding the roots of this variability is a significant challenge. Here we employ the angle-resolved photoelectron spe…
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The magnetic sublayers introduced by intercalation into the host transition-metal dichalcogenide (TMD) are known to produce various magnetic states. The magnetic sublayers and their magnetic ordering strongly modify the electronic coupling between layers of the host compound. Understanding the roots of this variability is a significant challenge. Here we employ the angle-resolved photoelectron spectroscopy at various photon energies, the {\it ab initio} electronic structure calculations, and modeling to address the particular case of Ni-intercalate, Ni$_{1/3}$NbS$_2$. We find that the bands around the Fermi level bear the signature of a strong yet unusual hybridization between NbS$_2$ conduction band states and the Ni 3$d$ orbitals. The hybridization between metallic NbS$_2$ layers is almost entirely suppressed in the central part of the Brillouin zone, including the part of the Fermi surface around the $\mathrmΓ$ point. Simultaneously, it gets very pronounced towards the zone edges. It is shown that this behavior is the consequence of the rather exceptional, {\it symmetry imposed}, spatially strongly varying, {\it zero total} hybridization between relevant Ni magnetic orbitals and the neighboring Nb orbitals that constitute the metallic bands. We also report the presence of the so-called $β$-feature, discovered only recently in two other magnetic intercalates with very different magnetic orderings. In Ni$_{1/3}$NbS$_2$, the feature shows only at particular photon energies, indicating its bulk origin. Common to prior observations, it appears as a series of very shallow electron pockets at the Fermi level, positioned along the edge of the Brillouin zone. Unforeseen by {\it ab initio} electronic calculations, and its origin still unresolved, the feature appears to be a robust consequence of the intercalation of 2H-NbS$_2$ with magnetic ions.
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Submitted 15 February, 2024; v1 submitted 11 January, 2024;
originally announced January 2024.
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Role of intercalated Cobalt in the electronic structure of Co$_{1/3}$NbS$_2$
Authors:
Petar Popčević,
Yuki Utsumi,
Izabela Biało,
Wojciech Tabis,
Mateusz A. Gala,
Marcin Rosmus,
Jacek J. Kolodziej,
Natalia Tomaszewska,
Mariusz Garb,
Helmuth Berger,
Ivo Batistić,
Neven Barišić,
László Forró,
Eduard Tutiš
Abstract:
Co$_{1/3}$NbS$_2$ is the magnetic intercalate of 2H-NbS$_2$ where electronic itinerant and magnetic properties strongly influence each other throughout the phase diagram. Here we report the first angle-resolved photoelectron spectroscopy (ARPES) study in Co$_{1/3}$NbS$_2$. The observed electronic structure seemingly resembles the one of the parent material 2H-NbS$_2$, with the shift in Fermi energ…
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Co$_{1/3}$NbS$_2$ is the magnetic intercalate of 2H-NbS$_2$ where electronic itinerant and magnetic properties strongly influence each other throughout the phase diagram. Here we report the first angle-resolved photoelectron spectroscopy (ARPES) study in Co$_{1/3}$NbS$_2$. The observed electronic structure seemingly resembles the one of the parent material 2H-NbS$_2$, with the shift in Fermi energy of 0.5 eV accounting for the charge transfer of approximately two electrons from each Co ion into the NbS$_2$ layers. However, we observe significant departures from the 2H-NbS$_2$ rigid band picture: Entirely unrelated to the 2H-NbS$_2$ electronic structure, a shallow electronic band is found crossing the Fermi level near the boundary of the first Brillouin zone of the superstructure imposed by the intercalation. The evolution of the experimental spectra upon varying the incident photon energy suggests the Co origin of this band. Second, the Nb bonding band, found deeply submerged below the Fermi level at the $Γ$ point, indicates the interlayer-hybridization being very much amplified by intercalation, with Co magnetic ions probably acting as covalent bridges between NbS$_2$ layers. The strong hybridization between conducting and magnetic degrees of freedom suggests dealing with strongly correlated electron system where the interlayer coupling plays an exquisite role.
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Submitted 8 April, 2022; v1 submitted 24 November, 2021;
originally announced November 2021.
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Electronic transport and magnetism in the alternating stack of metallic and highly frustrated magnetic layers in Co$_{1/3}$NbS$_2$
Authors:
Petar Popčević,
Ivo Batistić,
Ana Smontara,
Kristijan Velebit,
Jaćim Jaćimović,
Ivica Živković,
Nikolay Tsyrulin,
Julian Piatek,
Helmuth Berger,
Andrey A. Sidorenko,
Henrik M. Rønnow,
László Forró,
Neven Barišić,
Eduard Tutiš
Abstract:
Transition-metal dichalcogenides (TMDs) are layered compounds that support many electronic phases, including various charge density waves, superconducting, and Mott insulating states. Their intercalation with magnetic ions introduces magnetic sublayers, which strongly influence the coupling between host layers, and feature various magnetic states adjustable by external means. Co$_{1/3}$NbS$_2$ hos…
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Transition-metal dichalcogenides (TMDs) are layered compounds that support many electronic phases, including various charge density waves, superconducting, and Mott insulating states. Their intercalation with magnetic ions introduces magnetic sublayers, which strongly influence the coupling between host layers, and feature various magnetic states adjustable by external means. Co$_{1/3}$NbS$_2$ hosts a particularly sensitive magnetic subsystem with the lowest magnetic ordering temperature in the family of magnetically intercalated TMDs, and the only one where the complete suppression of magnetic order under pressure has been recently suggested. By combining the results of several experimental methods, electronic ab initio calculations, and modeling, we develop insights into the mechanisms of electric transport, magnetic ordering, and their interaction in this compound. The elastic neutron scattering is used to directly follow the evolution of the antiferromagnetic order parameter with pressure and temperature. Our results unambiguously disclose the complete suppression of the observed magnetic order around 1.7 GPa. We delve into possible mechanisms of magnetic order suppression under pressure, highlighting the role of magnetic frustrations indicated by magnetic susceptibility measurements and ab-initio calculations. Electronic conduction anisotropy is measured in the wide temperature and pressure range. Here we show that the transport in directions along and perpendicular to layers respond differently to the appearance of magnetic ordering or the application of the hydrostatic pressure. We propose the 'spin-valve' mechanism where the intercalated Co ions act as spin-selective electrical transport bridges between host layers. The mechanism applies to various magnetic states and can be extended to other magnetically intercalated TMDs.
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Submitted 3 March, 2023; v1 submitted 18 March, 2020;
originally announced March 2020.
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Exact solution of electronic transport in semiconductors dominated by scattering on polaronic impurities
Authors:
J. Krsnik,
I. Batistić,
A. Marunović,
E. Tutiš,
O. S. Barišić
Abstract:
The scattering of electrons on impurities with internal degrees of freedom is bound to produce the signatures of the scatterer's own dynamics and results in nontrivial electronic transport properties. Previous studies of polaronic impurities in low-dimensional structures, like molecular junctions and one-dimensional nanowire models, have shown that perturbative treatments cannot account for a comp…
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The scattering of electrons on impurities with internal degrees of freedom is bound to produce the signatures of the scatterer's own dynamics and results in nontrivial electronic transport properties. Previous studies of polaronic impurities in low-dimensional structures, like molecular junctions and one-dimensional nanowire models, have shown that perturbative treatments cannot account for a complex energy dependence of the scattering cross section in such systems. Here we derive the exact solution of polaronic impurities sha** the electronic transport in bulk (3D) systems. In the model with a short-ranged electron-phonon interaction, we solve for and sum over all elastic and inelastic partial cross sections, abundant in resonant features. The temperature dependence of the charge mobility shows the power-law dependence, $μ(T)\propto T^{-ν}$, with $ν$ being highly sensitive to impurity parameters. The latter may explain nonuniversal power-law exponents observed experimentally, e.g. in high-quality organic molecular semiconductors.
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Submitted 15 January, 2021; v1 submitted 28 February, 2020;
originally announced February 2020.
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Preferential out-of-plane conduction and quasi-one-dimensional electronic states in layered 1T-TaS2
Authors:
Edoardo Martino,
Andrea Pisoni,
Luka Ćirić,
Alla Arakcheeva,
Helmuth Berger,
Ana Akrap,
Carsten Putzke,
Philip J. W. Moll,
Ivo Batistić,
Eduard Tutiš,
László Forró,
Konstantin Semeniuk
Abstract:
Layered transition metal dichalcogenides (TMDs) are commonly classified as quasi-two-dimensional materials, meaning that their electronic structure closely resembles that of an individual layer, which results in resistivity anisotropies reaching thousands. Here, we show that this rule does not hold for 1T-TaS2 - a compound with the richest phase diagram among TMDs. While the onset of charge densit…
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Layered transition metal dichalcogenides (TMDs) are commonly classified as quasi-two-dimensional materials, meaning that their electronic structure closely resembles that of an individual layer, which results in resistivity anisotropies reaching thousands. Here, we show that this rule does not hold for 1T-TaS2 - a compound with the richest phase diagram among TMDs. While the onset of charge density wave order makes the in-plane conduction non-metallic, we reveal that the out-of-plane charge transport is metallic and the resistivity anisotropy is close to one. We support our findings with ab-initio calculations predicting a pronounced quasi-one-dimensional character of the electronic structure. Consequently, we interpret the highly debated metal-insulator transition in 1T-TaS2 as a quasi-one-dimensional instability, contrary to the long-standing Mott localisation picture. In a broader context, these findings are relevant for the newly born field of van der Waals heterostructures, where tuning interlayer interactions (e.g. by twist, strain, intercalation, etc.) leads to new emergent phenomena.
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Submitted 13 April, 2020; v1 submitted 9 October, 2019;
originally announced October 2019.
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Scattering dominated high-temperature phase of 1T-TiSe2: an optical conductivity study
Authors:
Kristijan Velebit,
Petar Popčević,
Ivo Batistić,
Mathias Eichler,
Helmuth Berger,
László Forró,
Martin Dressel,
Neven Barišić,
Eduard Tutiš
Abstract:
The controversy regarding the precise nature of the high-temperature phase of 1T-TiSe2 lasts for decades. It has intensified in recent times when new evidence for the excitonic origin of the low-temperature charge-density wave state started to unveil. Here we address the problem of the high-temperature phase through precise measurements and detailed analysis of the optical response of 1T-TiSe2 sin…
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The controversy regarding the precise nature of the high-temperature phase of 1T-TiSe2 lasts for decades. It has intensified in recent times when new evidence for the excitonic origin of the low-temperature charge-density wave state started to unveil. Here we address the problem of the high-temperature phase through precise measurements and detailed analysis of the optical response of 1T-TiSe2 single crystals. The separate responses of electron and hole subsystems are identified and followed in temperature. We show that neither semiconductor nor semimetal pictures can be applied in their generic forms as the scattering for both types of carriers is in the vicinity of the Ioffe-Regel limit with decay rates being comparable to or larger than the offsets of band extrema. The nonmetallic temperature dependence of transport properties comes from the anomalous temperature dependence of scattering rates. Near the transition temperature the heavy electrons and the light holes contribute equally to the conductivity. This surprising coincidence is regarded as the consequence of dominant intervalley scattering that precedes the transition. The low-frequency peak in the optical spectra is identified and attributed to the critical softening of the L-point collective mode.
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Submitted 17 May, 2017;
originally announced May 2017.
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Semimetallic and charge-ordered $α$-(BEDT-TTF)$_2$I$_3$: on the role of disorder in dc transport and dielectric properties
Authors:
Tomislav Ivek,
Matija Čulo,
Marko Kuveždić,
Eduard Tutiš,
Mario Basletić,
Branimir Mihaljević,
Emil Tafra,
Silvia Tomić,
Anja Löhle,
Martin Dressel,
Dieter Schweitzer,
Bojana Korin-Hamzić
Abstract:
$α$-(BEDT-TTF)$_2$I$_3$ is a prominent example of charge ordering among organic conductors. In this work we explore the details of transport within the charge-ordered as well as semimetallic phase at ambient pressure. In the high-temperature semimetallic phase, the mobilities and concentrations of both electrons and holes conspire in such a way to create an almost temperature-independent conductiv…
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$α$-(BEDT-TTF)$_2$I$_3$ is a prominent example of charge ordering among organic conductors. In this work we explore the details of transport within the charge-ordered as well as semimetallic phase at ambient pressure. In the high-temperature semimetallic phase, the mobilities and concentrations of both electrons and holes conspire in such a way to create an almost temperature-independent conductivity as well as a low Hall effect. We explain these phenomena as a consequence of a predominantly inter-pocket scattering which equalizes mobilities of the two types of charge carriers. At low temperatures, within the insulating charge-ordered phase two channels of conduction can be discerned: a temperature-dependent activation which follows the mean-field behavior, and a nearest-neighbor hop** contribution. Together with negative magnetoresistance, the latter relies on the presence of disorder. The charge-ordered phase also features a prominent dielectric peak which bears a similarity to relaxor ferroelectrics. Its dispersion is determined by free-electron screening and pushed by disorder well below the transition temperature. The source of this disorder can be found in the anion layers which randomly perturb BEDT-TTF molecules through hydrogen bonds.
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Submitted 11 July, 2017; v1 submitted 17 March, 2017;
originally announced March 2017.
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Metallicity and conductivity crossover in white light illuminated CH$_3$NH$_3$PbI$_3$ perovskite
Authors:
A. Pisoni,
J. Jacimovic,
B. Náfrádi,
P. Szirmai,
M. Spina,
R. Gaál,
K. Holczer,
E. Tutis,
L. Forró,
E. Horváth
Abstract:
The intrinsic d.c. electrical resistivity ($ρ$) - measurable on single crystals only - is often the quantity first revealing the properties of a given material. In the case of CH$_3$NH$_3$PbI$_3$ perovskite measuring $ρ$ under white light illumination provides insight into the coexistence of extended and shallow localized states (0.1 eV below the conduction band). The former ones dominate the elec…
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The intrinsic d.c. electrical resistivity ($ρ$) - measurable on single crystals only - is often the quantity first revealing the properties of a given material. In the case of CH$_3$NH$_3$PbI$_3$ perovskite measuring $ρ$ under white light illumination provides insight into the coexistence of extended and shallow localized states (0.1 eV below the conduction band). The former ones dominate the electrical conduction while the latter, coming from neutral defects, serve as a long-lifetime charge carrier reservoir accessible for charge transport by thermal excitation. Remarkably, in the best crystals the electrical resistivity shows a metallic behaviour under illumination up to room temperature, giving a new dimension to the material in basic physical studies.
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Submitted 19 April, 2016;
originally announced April 2016.
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High pressure study of transport properties in Co$_{1/3}$NbS$_2$
Authors:
N. Barišić,
I. Smiljanić,
P. Popčević,
A. Bilušić,
E. Tutiš,
A. Smontara,
H. Berger,
J. Jaćimović,
O. Yuli,
L. Forró
Abstract:
This is the first study of the effect of pressure on transition metal dichalcogenides intercalated by atoms that order magnetically. Co$_{1/3}$NbS$_2$ is a layered system where the intercalated Co atoms order antiferromagnetically at T$_N$ = 26 K at ambient pressure. We have conducted a detailed study of dc-resistivity ($ρ$), thermoelectric power (S) and thermal conductivity ($κ$). We found that a…
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This is the first study of the effect of pressure on transition metal dichalcogenides intercalated by atoms that order magnetically. Co$_{1/3}$NbS$_2$ is a layered system where the intercalated Co atoms order antiferromagnetically at T$_N$ = 26 K at ambient pressure. We have conducted a detailed study of dc-resistivity ($ρ$), thermoelectric power (S) and thermal conductivity ($κ$). We found that at ambient pressure the magnetic transition corresponds to a well pronounced peak in dS/dT, as well as to a kink in the dc-resistivity. The effect of ordering on the thermal conductivity is rather small but, surprisingly, more pronounced in the lattice contribution than in the electronic contribution to $κ$. Under pressure, the resistivity increases in the high temperature range, contrary to all previous measurements in other layered transition metal dichalcogenides (TMD). In the low temperature range, the strong dependences of thermopower and resistivity on pressure are observed below TN, which, in turn, also depends on pressure at rate of dT$_N$/dp $\approx$ -1 K/kbar. Several possible microscopic explanations of the reduction of the ordering temperature and the evolution of the transport properties with pressure are discussed.
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Submitted 10 December, 2010;
originally announced December 2010.
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Diffusion of triplet excitons in an operational Organic Light Emitting Diode
Authors:
M. Lebental,
H. Choukri,
S. Chénais,
S. Forget,
A. Siove,
B. Geffroy,
E. Tutis
Abstract:
Measurements of the diffusion length L for triplet excitons in small molecular-weight organic semiconductors are commonly carried out using a technique in which a phosphorescent-doped probe layer is set in the vicinity of a supposed exciton generation zone. However, analyses commonly used to retrieve $L$ ignore microcavity effects that may induce a strong modulation of the emitted light as the p…
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Measurements of the diffusion length L for triplet excitons in small molecular-weight organic semiconductors are commonly carried out using a technique in which a phosphorescent-doped probe layer is set in the vicinity of a supposed exciton generation zone. However, analyses commonly used to retrieve $L$ ignore microcavity effects that may induce a strong modulation of the emitted light as the position of the exciton probe is shifted. The present paper investigates in detail how this technique may be improved to obtain more accurate results for L. The example of 4,4'-bis(carbazol-9-yl)1,1'-biphenyl (CBP) is taken, for which a triplet diffusion length of L=16 +/- 4 nm (at 3 mA/cm2) is inferred from experiments. The influence of triplet-triplet annihilation, responsible for an apparent decrease of L at high current densities, is theoretically investigated, as well as the 'invasiveness' of the thin probe layer on the exciton distribution. The interplay of microcavity effects and direct recombinations is demonstrated experimentally with the archetypal trilayer structure [N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)]-4,4'-diaminobiphenyl (NPB)/CBP/ 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (named bathocuproine, BCP). It is shown that in this device holes do cross the NPB/CBP junction, without the assistance of electrons and despite the high energetic barrier imposed by the shift between the HOMO levels. The use of the variable-thickness doped layer technique in this case is then discussed. Finally, some guidelines are given for improving the measure of the diffusion length of triplet excitons in operational OLEDs, applicable to virtually any small molecular-weight material.
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Submitted 18 February, 2009;
originally announced February 2009.
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Manifestations of fine features of the density of states in the transport properties of KOs2O6
Authors:
A. Akrap,
E. Tutis,
S. M. Kazakov,
N. D. Zhigadlo,
J. Karpinski,
L. Forro
Abstract:
We performed high-pressure transport measurements on high-quality single crystals of KOs2O6, a beta-pyrochlore superconductor. While the resistivity at high temperatures might approach saturation, there is no sign of saturation at low temperatures, down to the superconducting phase. The anomalous resistivity is accompanied by a nonmetallic behavior in the thermoelectric power (TEP) up to tempera…
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We performed high-pressure transport measurements on high-quality single crystals of KOs2O6, a beta-pyrochlore superconductor. While the resistivity at high temperatures might approach saturation, there is no sign of saturation at low temperatures, down to the superconducting phase. The anomalous resistivity is accompanied by a nonmetallic behavior in the thermoelectric power (TEP) up to temperatures of at least 700 K, which also exhibits a broad hump with a maximum at 60 K. The pressure influences mostly the low-energy electronic excitations. A simple band model based on enhanced density of states in a narrow window around the Fermi energy (EF) explains the main features of this unconventional behavior in the transport coefficients and its evolution under pressure.
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Submitted 10 May, 2007;
originally announced May 2007.
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Investigation of the charge transport through disordered organic molecular heterojunctions
Authors:
H. Houili,
E. Tutis,
I. Batistic,
L. Zuppiroli
Abstract:
We develop a new three-dimensional multiparticle Monte Carlo ({\it 3DmpMC}) approach in order to study the hop** charge transport in disordered organic molecular media. The approach is applied here to study the charge transport across an energetically disordered organic molecular heterojunction, known to strongly influence the characteristics of the multilayer devices based on thin organic fil…
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We develop a new three-dimensional multiparticle Monte Carlo ({\it 3DmpMC}) approach in order to study the hop** charge transport in disordered organic molecular media. The approach is applied here to study the charge transport across an energetically disordered organic molecular heterojunction, known to strongly influence the characteristics of the multilayer devices based on thin organic films. The role of energetic disorder and its spatial correlations, known to govern the transport in the bulk, are examined here for the bilayer homopolar system where the heterojunction represents the bottleneck for the transport. We study the effects of disorder on both sides of the heterojunction, the effects of the spatial correlation within each material and among the layers. Most importantly, the {\it 3DmpMC} approach permits us to treat correctly the effects of the Coulomb interaction among carriers in the region where the charge accumulation in the device is particularly important and the Coulomb interaction most pronounced. The Coulomb interaction enhances the current by increasing the electric field at the heterojunction as well as by affecting the thermalization of the carriers in front of the barrier. Our MC simulations are supplemented by the master equation (ME) calculations in order to build a rather comprehensive picture of the hop** transport over the homopolar heterojunction.
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Submitted 5 January, 2006;
originally announced January 2006.
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Charge Dynamics in Cuprate Superconductors
Authors:
E. Tutis,
H. Niksic,
S. Barisic
Abstract:
In this lecture we present some interesting issues that arise when the dynamics of the charge carriers in the CuO$_2$ planes of the high temperature superconductors is considered. Based on the qualitative picture of do**, set by experiments and some previous calculations, we consider the strength of various inter and intra-cell charge transfer susceptibilities, the question of Coulomb screenin…
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In this lecture we present some interesting issues that arise when the dynamics of the charge carriers in the CuO$_2$ planes of the high temperature superconductors is considered. Based on the qualitative picture of do**, set by experiments and some previous calculations, we consider the strength of various inter and intra-cell charge transfer susceptibilities, the question of Coulomb screening and charge collective modes. The starting point is the usual p-d model extended by the long range Coulomb (LRC) interaction. Within this model it is possible to examine the case in which the LRC forces frustrate the electronic phase separation, the instability which is present in the model without an LRC interaction. While the static dielectric function in such systems is negative down to arbitrarily small wavevectors, the system is not unstable. We consider the dominant electronic charge susceptibilities and possible consequences for the lattice properties.
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Submitted 1 October, 1997;
originally announced October 1997.
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The effect of large $U_d$ on the Raman spectrum in the copper-oxide superconductors
Authors:
H. Niksic,
E. Tutis,
S. Barisic
Abstract:
The effect of the charge fluctuations on the electronic and Raman spectrum of high temperature superconductors is examined, using the slave boson approach to the large Coulomb repulsion $U_d$ on the copper site. Instead of the saddle point approximation $\srv{b}\ne 0$ for the slave boson, characteristic for various $N\ide\infty$ approaches, we confine ourselves to the non-crossing approximation (N…
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The effect of the charge fluctuations on the electronic and Raman spectrum of high temperature superconductors is examined, using the slave boson approach to the large Coulomb repulsion $U_d$ on the copper site. Instead of the saddle point approximation $\srv{b}\ne 0$ for the slave boson, characteristic for various $N\ide\infty$ approaches, we confine ourselves to the non-crossing approximation (NCA) diagrams for the Green functions. In this way the effects of charge fluctuations and of the constraint of no double occupancy on the copper site on the shape of the electronic spectrum are studied primarily, while the slave boson diagrams responsible for copper-copper spin correlations are intentionally not included. The novel feature of the charge fluctuation dynamics shows up in the slave boson spectrum as the plateau extending over the range of 1eV below $ω=0$. This is further reflected in the electronic Raman spectrum that we calculate for various combinations of the polarization of the incoming and scattered light. The Raman spectrum shows the characteristic featureless behaviour up to frequencies of the order of 1eV while the polarization dependence is also in qualitative agreement with experiment.
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Submitted 2 February, 1995;
originally announced February 1995.
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Raman spectrum and charge fluctuations in the copper-oxide superconductors
Authors:
H. Niksic,
E. Tutis,
S. Barisic
Abstract:
The effect of the charge fluctuations on the electronic spectrum and the Raman spectrum of high temperature superconductors is examined within the slave boson approach. Instead of using the saddle point approximation for slave bosons, we confine ourselves to the non-crossing approximation (NCA) in summing the diagrams for the Green functions, thus obtaining the renormalized hole spectrum and its l…
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The effect of the charge fluctuations on the electronic spectrum and the Raman spectrum of high temperature superconductors is examined within the slave boson approach. Instead of using the saddle point approximation for slave bosons, we confine ourselves to the non-crossing approximation (NCA) in summing the diagrams for the Green functions, thus obtaining the renormalized hole spectrum and its lifetime on equal footing. The electronic Raman spectrum is calculated, showing the characteristic featureless behaviour up to the frequency of the order of renormalized $Δ_{pd}$ parameter. The dependence on the polarization of the incident and the scattered light agrees with experiments.
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Submitted 2 February, 1995;
originally announced February 1995.
