Effects of inorganic seed promoters on MoS2 few-layers grown via chemical vapor deposition
Authors:
Alessandro Cataldo,
Pinaka Pani Tummala,
Christian Martella,
Carlo Spartaco Casari,
Alessandro Molle,
Alessio Lamperti
Abstract:
In the last years, transition metal dichalcogenides (TMDs), especially at the two-dimensional (2D) limit, gained a large interest due to their unique optical and electronic properties. Among them, MoS2 received great attention from the scientific community due to its versatility, workability, and applicability in a large number of fields such as electronics, optoelectronics and electrocatalysis. T…
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In the last years, transition metal dichalcogenides (TMDs), especially at the two-dimensional (2D) limit, gained a large interest due to their unique optical and electronic properties. Among them, MoS2 received great attention from the scientific community due to its versatility, workability, and applicability in a large number of fields such as electronics, optoelectronics and electrocatalysis. To open the possibility of 2D-MoS2 exploitation, its synthesis over large macroscopic areas using cost-effective methods is fundamental. In this study, we report a method for the synthesis of large-area (~ cm2) few-layers MoS2 via liquid precursor CVD (L-CVD), where the Mo precursor (i.e. ammonium heptamolybdate AHM) is provided via a solution that is spin-coated over the substrate. Given the capability of organic and inorganic molecules, such as alkaline salts, to enhance MoS2 growth, we investigated the action of different inorganic salts as seed promoters. In particular, by using visible Raman spectroscopy, we focused on the effect of Na(OH), KCl, KI, and Li(OH) on the thickness, morphology, uniformity and degree of coverage of the grown MoS2. We optimized the process tuning parameters such as the volume of spin-coated solution, the growth temperature, and the seed promoter concentration, to synthesise the lowest possible thickness which resulted to be 2 layers (2L) of the highest quality. We witnessed that the addition of an inorganic seed promoter in the solution improves the extension of the grown MoS2 promoting lateral growth front, and therefore the degree of coverage. From this study, we conclude that, amongst the investigated seed promoters, K-based salts proved to grant the growth of high-quality two-layer MoS2 with optimal and uniform coverage of the SiO2/Si substrate surface.
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Submitted 23 October, 2023;
originally announced October 2023.
Tailoring the Dimensionality of Tellurium Nanostructures via Vapor Transport Growth
Authors:
Sara Ghomi,
Pinaka Pani Tummala,
Raimondo Cecchini,
Carlo S. Casari,
Alessio Lamperti,
Carlo Grazianetti,
Christian Martella,
Alessandro Molle
Abstract:
The interest in tellurium nanostructures is on the rise due to their outstanding physical properties including high carrier mobility, anisotropic charge conduction, photoconductivity, thermoelectricity, and piezoelectricity. Applications in related technologies require tailoring the synthesis of tellurium from its preferred vertical growth toward the lateral growth. Here, the synthesis of pillar-l…
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The interest in tellurium nanostructures is on the rise due to their outstanding physical properties including high carrier mobility, anisotropic charge conduction, photoconductivity, thermoelectricity, and piezoelectricity. Applications in related technologies require tailoring the synthesis of tellurium from its preferred vertical growth toward the lateral growth. Here, the synthesis of pillar-like and pennette-like structures of tellurium through a powder vapor deposition technique has been discussed. It has been shown that exploiting salt additives such as NaCl in vapor deposition technique can enhance tellurium pillar dimensionality toward large planar grains. Further, we report on the synthesis of hexagonal ultrathin tellurium nanoflakes, namely tellurene, from few-layer to monolayer thickness by optimizing the growth kinetics without the usage of any additives. In addition, we explore the surface quality and physical properties of as-grown two-dimensional (2D) tellurium, using a variety of characterization techniques, including Raman spectroscopy, scanning electron microscopy, atomic force microscopy, and Kelvin probe force microscopy. This study provides a pivotal scheme for enabling scalable 2D tellurium integration in numerous potential applications for electronics and optoelectronic devices.
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Submitted 18 September, 2023; v1 submitted 19 July, 2023;
originally announced July 2023.
