Showing 1–20 of 20 results for author: Tulapurkar, A A

Ultrahigh Frequency and Multi-channel Output in Skyrmion Based Nano-oscillator

Authors: Abhishek Sharma, Saumya Gupta, Debasis Das, Ashwin. A. Tulapurkar, Bhaskaran Muralidharan

Abstract: Spintronic nano-oscillators can generate tunable microwave signals that find a wide range of applications in the field of telecommunication to modern neuromorphic computing systems. Among other spintronic devices, a magnetic skyrmion is a promising candidate for the next generation of low-power devices due to its small size and topological stability. In this work, we propose a multi-channel oscill… ▽ More Spintronic nano-oscillators can generate tunable microwave signals that find a wide range of applications in the field of telecommunication to modern neuromorphic computing systems. Among other spintronic devices, a magnetic skyrmion is a promising candidate for the next generation of low-power devices due to its small size and topological stability. In this work, we propose a multi-channel oscillator design based on the synthetic anti-ferromagnetic (SAF) skyrmion pair. The mitigation of the skyrmion Hall effect in SAF and the associated decimation of the Magnus force endows the proposed oscillator with an ultra-high frequency of 41GHz and a multi-channel frequency output driven by the same current. The ultrahigh operational frequency represents an $\sim$342 times improvement compared to the monolayer single skyrmion oscillator featuring a constant uniaxial anisotropy profile. Using micromagnetic simulations, we demonstrate the effectiveness of our proposed multi-channel oscillator design by introducing multi-channel nanotracks along with multiple skyrmions for enhanced frequency operation. The ultrahigh operational frequency and multi-channel output are attributed to three key factors: The oscillator design accounting for a finite spin-flip length of the spacer (such as Ru) material, tangential velocity proportionality on input spin current along with weak dependence on the radius of rotation of the skyrmion-pair, skyrmion interlocking in the channel enabled by the multi-channel high Ku rings and skyrmion-skyrmion repulsion, therefore resulting ultrahigh frequency and multi-channel outputs. △ Less

Submitted 20 March, 2024; originally announced March 2024.

Effect of Edge Roughness on resistance and switching voltage of Magnetic Tunnel Junctions

Authors: Rachit R. Pandey, Sutapa Dutta, Heston A. Mendonca, Ashwin A. Tulapurkar

Abstract: We investigate the impact of edge roughness on the electrical transport properties of magnetic tunnel junctions using non-equilibrium Greens function formalism. We have modeled edge roughness as a stochastic variation in the cross-sectional profile of magnetic tunnel junction characterized by the stretched exponential decay of the correlation function. The stochastic variation in the shape and siz… ▽ More We investigate the impact of edge roughness on the electrical transport properties of magnetic tunnel junctions using non-equilibrium Greens function formalism. We have modeled edge roughness as a stochastic variation in the cross-sectional profile of magnetic tunnel junction characterized by the stretched exponential decay of the correlation function. The stochastic variation in the shape and size changes the transverse energy mode profile and gives rise to the variations in the resistance and switching voltage of the magnetic tunnel junction. We find that the variations are larger as the magnetic tunnel junction size is scaled down due to the quantum confinement effect. A model is proposed for the efficient calculation of edge roughness effects by approximating the cross-sectional geometry to a circle with the same cross-sectional area. Further improvement can be obtained by approximating the cross-sectional area to an ellipse with an aspect ratio determined by the first transverse eigenvalue corresponding to the 2D cross section. These results would be useful for reliable design of the spin transfer torque-magnetic random access memory (STT-MRAM) with ultra-small magnetic tunnel junctions. △ Less

Submitted 31 December, 2022; originally announced January 2023.

Comments: 3 pages, 3 figures

Journal ref: IEEE Electron Device Letters.44(2023).745-748

Interfacial and bulk spin Hall contributions to field-like spin-orbit torque generated by Iridium

Authors: Sutapa Dutta, Arnab Bose, A. A. Tulapurkar, R. A. Buhrman, D. C. Ralph

Abstract: We present measurements of spin orbit torques generated by Ir as a function of film thickness in sputtered Ir/CoFeB and Ir/Co samples. We find that Ir provides a dam**-like component of spin orbit torque with a maximum spin torque conductivity 1.4e5 in SI unit and a maximum spin-torque efficiency of 0.04, which is sufficient to drive switching in an 0.8 nm film of CoFeB with perpendicular magnet… ▽ More We present measurements of spin orbit torques generated by Ir as a function of film thickness in sputtered Ir/CoFeB and Ir/Co samples. We find that Ir provides a dam**-like component of spin orbit torque with a maximum spin torque conductivity 1.4e5 in SI unit and a maximum spin-torque efficiency of 0.04, which is sufficient to drive switching in an 0.8 nm film of CoFeB with perpendicular magnetic anisotropy. We also observe a surprisingly large field like spin orbit torque. Measurements as a function of Ir thickness indicate a substantial contribution to the FLT from an interface mechanism so that in the ultrathin limit there is a non-zero FLT with a maximum torque conductivity -5.0E4 in the SI unit. When the Ir film thickness becomes comparable to or greater than its spin diffusion length, 1.6 nm, there is also a smaller bulk contribution to the fieldlike torque. △ Less

Submitted 6 May, 2021; originally announced May 2021.

Transmission based tomography for spin qubits

Authors: Amritesh Sharma, Ashwin A. Tulapurkar

Abstract: We consider a system of static spin qubits embedded in a one-dimensional spin coherent channel and develop a scheme to readout the state of one and two qubits separately. We use unpolarized flying qubits for this purpose that scatter off from the static qubits due to the Heisenberg exchange interaction. Analysing the transmission coefficient as a function of density matrix elements along with addi… ▽ More We consider a system of static spin qubits embedded in a one-dimensional spin coherent channel and develop a scheme to readout the state of one and two qubits separately. We use unpolarized flying qubits for this purpose that scatter off from the static qubits due to the Heisenberg exchange interaction. Analysing the transmission coefficient as a function of density matrix elements along with additional unitary gates we reconstruct the state of static qubits. △ Less

Submitted 23 January, 2021; originally announced January 2021.

Comments: comments on the paper are welcome

Journal ref: Phys. Rev. A 103, 052430 (2021)

Quantum state preparation of spin eigenstates including the Dicke states with generalized all-coupled interaction in a spintronic quantum computing architecture

Authors: Amritesh Sharma, Ashwin A. Tulapurkar

Abstract: There has been an extensive development in the use of multi-partite entanglement as a resource for various quantum information processing tasks. In this paper we focus on preparing arbitrary spin eigenstates whose subset contain important entangled resources like Dicke states as well as some other sub-radiant states that are difficult to prepare. Leveraging on the symmetry of these states we consi… ▽ More There has been an extensive development in the use of multi-partite entanglement as a resource for various quantum information processing tasks. In this paper we focus on preparing arbitrary spin eigenstates whose subset contain important entangled resources like Dicke states as well as some other sub-radiant states that are difficult to prepare. Leveraging on the symmetry of these states we consider uniform pairwise exchange coupling between every pair of qubits. Starting from a product state of a given spin eigenstate with a single qubit state, another spin eigenstate can be prepared using simple time evolutions. This expansion paves a deterministic approach to prepare arbitrary Dicke states in linear steps. We discuss an improvement in this cost building up on a previous work for W states deterministic preparation in logarithmic circuit depth. The modified algorithm requires several iterations of pum** spin angular momentum into the system and is akin to the amplitude amplification in Grover search. As a use case to demonstrate the proposed scheme, we choose a system of non-interacting static spin qubits connected to a ferromagnetic reservoir. The flying qubits emerging from the reservoir locally interact with static qubits successively, mediating an in-direct exchange interaction between all the pairs. △ Less

Submitted 15 August, 2020; originally announced August 2020.

Comments: Comments on the paper are welcome

Generation of n-qubit W states using Spin Torque

Authors: Amritesh Sharma, Ashwin A. Tulapurkar

Abstract: We examine here a scheme to generate a W state of an n-qubit system with all-to-all pairwise exchange interaction between n qubits. This relies on sharing of superposed excitations of a smaller number of $q$ qubits among others. We present a bound on the maximal jumps from q to n and formalize a scheme to generate $W_n$ state in $\mathcal{O}(\log_4 n)$ stages. We demonstrate this scheme in the con… ▽ More We examine here a scheme to generate a W state of an n-qubit system with all-to-all pairwise exchange interaction between n qubits. This relies on sharing of superposed excitations of a smaller number of $q$ qubits among others. We present a bound on the maximal jumps from q to n and formalize a scheme to generate $W_n$ state in $\mathcal{O}(\log_4 n)$ stages. We demonstrate this scheme in the context of spin torque based quantum computing architecture that are characterized by repeated interactions between static and flying qubits. △ Less

Submitted 6 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. A 101, 062330 (2020)

Investigation of the phase separation property in La$_{0.2}$Pr$_{0.4}$Ca$_{0.4}$MnO$_3$ manganite

Authors: Deepak Kumar, Ashwin A. Tulapurkar, C. V. Tomy

Abstract: We report a comprehensive investigation of La0.2Pr0.4Ca0.4MnO3 to clarify the micrometre scale phase separation phenomenon in the mixed valent manganite (La,Pr,Ca)MnO3. The compound shows multiple magnetic transitions, in which the charge-ordered state is converted into a ferromagnetic state in steps with the application of a magnetic field. The ac susceptibility measurements show that the glassy… ▽ More We report a comprehensive investigation of La0.2Pr0.4Ca0.4MnO3 to clarify the micrometre scale phase separation phenomenon in the mixed valent manganite (La,Pr,Ca)MnO3. The compound shows multiple magnetic transitions, in which the charge-ordered state is converted into a ferromagnetic state in steps with the application of a magnetic field. The ac susceptibility measurements show that the glassy transition at low temperatures does not depend on the frequency, thus indicating the absence of any spin glass behaviour. Magnetization as well as heat capacity measurements indicate that this low temperature transition is magnetic field dependent. The field dependent resistivity at 2K shows a sharp drop indicating that the sample behaviour changes from a high resistive state to a low resistive state, corroborating the conversion of charge-ordered insulating (COI) phase to a ferromagnetic metallic (FMM) phase. Our results point towards the existence of phase separation, rigidity of the low temperature glassy-like phase as well as the conversion of COI phase to FMM phase by the application of magnetic fields. △ Less

Submitted 20 November, 2019; originally announced November 2019.

Comments: 5 pages, 6 figures

Control of magnetization dynamics by spin Nernst torque

Authors: Arnab Bose, Ambika Shankar Shukla, Sutapa Dutta, Swapnil Bhuktare, Hanuman Singh, Ashwin A. Tulapurkar

Abstract: Control of magnetization dynamics is one of the primary goals in spintronics. It has been demonstrated using spin Hall effect i.e charge current to spin current conversion in non-magnetic metal which has large spin-orbit coupling such as Pt, W etc. Recently different groups have shown generation of spin current in Pt, W while thermal gradient is created by virtue of spin Nernst effect. In this wor… ▽ More Control of magnetization dynamics is one of the primary goals in spintronics. It has been demonstrated using spin Hall effect i.e charge current to spin current conversion in non-magnetic metal which has large spin-orbit coupling such as Pt, W etc. Recently different groups have shown generation of spin current in Pt, W while thermal gradient is created by virtue of spin Nernst effect. In this work we show the evidence of magnetization control by spin Nernst torque in Pt/Py bi-layer. We compared relative strength of spin Nernst Torque and spin Hall torque by measuring the systematic variation of magnetic linewidth on application of constant heat or charge current. Spin-torque ferromagnetic resonance (ST-FMR) technique is adopted to excite the magnet and to measure line-width precisely from the symmetric and anti-symmetric voltage component. Control of magnetization dynamics by spin Nernst torque will emerge as an alternative way to manipulate nano-magnets. △ Less

Submitted 5 June, 2018; originally announced June 2018.

Report number: Physical Review B 98, 184412

Journal ref: Phys. Rev. B 98, 184412 (2018)

Band-pass superlattice magnetic tunnel junctions

Authors: Abhishek Sharma, Ashwin. A. Tulapurkar, Bhaskaran Muralidharan

Abstract: Significant scientific and technological progress in the field of spintronics is based on trilayer magnetic tunnel junction devices which principally rely on the physics of single barrier tunneling. While technologically relevant devices have been prototyped, the physics of single barrier tunneling poses ultimate limitations on the performance of magnetic tunnel junction devices. Here, we propose… ▽ More Significant scientific and technological progress in the field of spintronics is based on trilayer magnetic tunnel junction devices which principally rely on the physics of single barrier tunneling. While technologically relevant devices have been prototyped, the physics of single barrier tunneling poses ultimate limitations on the performance of magnetic tunnel junction devices. Here, we propose a fresh route toward high performance magnetic tunnel junctions by making electronic analogs of optical phenomena such as anti-reflections and Fabry-Pèrot resonances. The devices we propose feature anti-reflection enabled superlattice heterostructures sandwiched between the fixed and the free ferromagnets of the magnetic tunnel junction structure. Our predictions are based on the non-equilibrium Green's function spin transport formalism coupled self-consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation. Owing to the physics of bandpass spin filtering in the bandpass superlattice magnetic tunnel junction device, we demonstrate an ultra-high boost in the tunnel magneto-resistance (TMR$\approx5\times10^4\%$) and nearly 92% suppression of spin transfer torque switching bias in comparison to a traditional trilayer magnetic tunnel junction device. We rationalize improvised spin transfer torque switching via analysis of the Slonczewski spin current transmission spectra. The proof of concepts presented here can lead to next-generation spintronics device design harvesting the rich physics of superlattice heterostructures and exploiting spintronic analogs of optical phenomena. △ Less

Submitted 13 November, 2019; v1 submitted 29 January, 2018; originally announced January 2018.

Comments: 5 pages

Direct Observation of the Reciprocity between Spin Current and Phonon Interconversion

Authors: Swapnil Bhuktare, Hanuman Singh, Arnab Bose, Ashwin. A. Tulapurkar

Abstract: Spin current has emerged as a leading candidate for manipulation of spins in a nano-magnet. We here experimentally show another utility of spin current viz. it can be used for generation of phonons. Within the same experimental setup, we also demonstrate the inverse effect of generation of spin current by phonons. To demonstrate them, we measured the scattering-matrix of a two-port device with int… ▽ More Spin current has emerged as a leading candidate for manipulation of spins in a nano-magnet. We here experimentally show another utility of spin current viz. it can be used for generation of phonons. Within the same experimental setup, we also demonstrate the inverse effect of generation of spin current by phonons. To demonstrate them, we measured the scattering-matrix of a two-port device with interdigital transducers as one port and array of Ni/Pt lines as second port on piezoelectric substrate. The off-diagonal elements which correspond to transmission between the ports, were found to have 180 degree relative phase shift. The transmission of electrical signal from port 2 to 1 corresponds to generation of phonons from spin-current, while transmission from port 1 to 2 corresponds to the inverse effect. These results could be useful for designing spin-current based gyrators. △ Less

Submitted 7 December, 2017; originally announced December 2017.

Integer, fractional and side band injection locking of spintronic feedback nano-oscillator to microwave signal

Authors: Hanuman Singh, K. Konishi, S. Bhuktare, A. Bose, S. Miwa, A. Fukushima, K. Yakushiji, S. Yuasa, H. Kubota, Y. Suzuki, A. A. Tulapurkar

Abstract: In this article we demonstrate the injection locking of recently demonstrated spintronic feedback nano oscillator to microwave magnetic fields at integers as well fractional multiples of its auto oscillation frequency. Feedback oscillators have delay as a new degree of freedom which is absent for spin-transfer torque based oscillators, which gives rise to side peaks along with a main peak. We show… ▽ More In this article we demonstrate the injection locking of recently demonstrated spintronic feedback nano oscillator to microwave magnetic fields at integers as well fractional multiples of its auto oscillation frequency. Feedback oscillators have delay as a new degree of freedom which is absent for spin-transfer torque based oscillators, which gives rise to side peaks along with a main peak. We show that it is also possible to lock the oscillator on its side band peaks, which opens a new avenue to phase locked oscillators with large frequency differences. We observe that for low driving fields, side band locking improves the quality factor of the main peak, whereas for higher driving fields the main peak is suppressed. Further, measurements at two field angles provide some insight into the role of symmetry of oscillation orbit in determining the fractional locking. △ Less

Submitted 2 November, 2017; originally announced November 2017.

Comments: 16 pages, 6 figure(Manuscript), 3 figure( supplementary information),Accepted ( Physical Review Applied)

Journal ref: Phys. Rev. Applied 8, 064011 (2017)

Sign reversal of field like spin-orbit torque in ultrathin Chromium/Nickel bilayer

Authors: Arnab Bose, Hanuman Singh, Swapnil Bhuktare, Sutapa Dutta, Ashwin A. Tulapurkar

Abstract: In this work report unconventional sign change of field like spin orbit torque in ultra-thin Chromium(1.5nm-5nm)/Nickel(8nm) bi-layer. We performed standard spin-torque ferromagnetic resonance (ST-FMR) experiment in Cr/Ni bi-layer by passing radio frequency current and measuring DC voltage. We observe that when thickness of Cr layer is critically low (<6nm) spin orbit torque by Cr on Ni significan… ▽ More In this work report unconventional sign change of field like spin orbit torque in ultra-thin Chromium(1.5nm-5nm)/Nickel(8nm) bi-layer. We performed standard spin-torque ferromagnetic resonance (ST-FMR) experiment in Cr/Ni bi-layer by passing radio frequency current and measuring DC voltage. We observe that when thickness of Cr layer is critically low (<6nm) spin orbit torque by Cr on Ni significantly increases. Most importantly the sign of field like torque is opposite to the Oersted field generated torque. To verify interracial nature of this torque, 2 nm thin Cu is inserted between Cr and Ni and field like torque behaves same as Oersted field induced torque. Hence possible origin of such unconventional sign change of field like torque could be inter-facial Rashba like spin orbit interaction which is present between Cr and Ni but vanishes in Cr/Cu/Ni hetero-structure. From our experiment we can estimate that approximately 35 Oe of effective Rashba like magnetic field is created on 8 nm thicker Ni layer, when 1E12 A/m^2 current flows through Cr layer. All experiments are done at room temperature. So Cr thin film is expected to behave like paramagnet (Neel temperature of bulk Cr is 311K). Hence Cr can be a good choice as a heavy metal to employ large spin orbit torque combining bulk spin Hall effect and inter-facial Rashba interaction. △ Less

Submitted 22 June, 2017; originally announced June 2017.

Report number: Phys. Rev. Appl. 9, 014022 (2018)

Observation of anomalous spin-torque generated by a ferromagnet

Authors: Arnab Bose, Duc Duong Lam, Swapnil Bhuktare, Sutapa Dutta, Hanuman Singh, Shinji Miwa, Ashwin A. tulapurkar

Abstract: In this work we report observation of in-plane current induced out-of-plane magnetic field driven torque in spin valve structure. Since ferromagnet has high spin orbit coupling it is expected to be the source of spin-orbit-torque as it possesses anomalous-Hall-effect (AHE: equivalent to spin Hall effect in heavy metal). So we have carried out spin-torque ferromagnetic resonance (ST-FMR) experiment… ▽ More In this work we report observation of in-plane current induced out-of-plane magnetic field driven torque in spin valve structure. Since ferromagnet has high spin orbit coupling it is expected to be the source of spin-orbit-torque as it possesses anomalous-Hall-effect (AHE: equivalent to spin Hall effect in heavy metal). So we have carried out spin-torque ferromagnetic resonance (ST-FMR) experiment in a spin valve (consists of a fixed magnet and a free magnet which are separated by Cu spacer), passing in-plane radio frequency current and measuring DC voltage. Our experimental results eventually indicate that spin torque exerted on the free magnet is not caused due to the spin current injection by the fixed magnet owing to its AHE, but it is originated from in-plane current driven out-of plane effective magnetic field. This is new class of spin torque which is completely different from Slonczewski-spin transfer torque and Rashba like field like torque. The effective out-of plane magnetic field depends on the direction of current (in-plane) and magnetization (in-plane) of the pinned layer. One possible mechanism behind this unconventional torque could be intefacial spin-scattering which is also origin of current in-plane GMR effect. Most importantly this effective out-of plane torque can be useful to switch out-of plane magnetic bits in spintronic memory application. △ Less

Submitted 22 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. Applied 9, 064026 (2018)

Resonant spin transfer torque nano-oscillators

Authors: Abhishek Sharma, Ashwin A Tulapurkar, Bhaskaran Muralidharan

Abstract: Spin transfer torque nano-oscillators are potential candidates for replacing the traditional inductor based voltage controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions which are disadvantaged by low power outputs and poor conversion efficiencies. In this letter, we theoretically propose to use resonant spin filtering in… ▽ More Spin transfer torque nano-oscillators are potential candidates for replacing the traditional inductor based voltage controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions which are disadvantaged by low power outputs and poor conversion efficiencies. In this letter, we theoretically propose to use resonant spin filtering in pentalayer magnetic tunnel junctions as a possible route to alleviate these issues and present device designs geared toward a high microwave output power and an efficient conversion of the d.c. input power. We attribute these robust qualities to the resulting non-trivial spin current profiles and the ultra high tunnel magnetoresistance, both arising from resonant spin filtering. The device designs are based on the nonequilibrium Green's function spin transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski's equation and the Poisson's equation. We demonstrate that the proposed structures facilitate oscillator designs featuring a large enhancement in microwave power of around $775\%$ and an efficiency enhancement of over $1300\%$ in comparison with typical trilayer designs. We also rationalize the optimum operating regions via an analysis of the dynamic and static device resistances. This work sets stage for pentalyer spin transfer torque nano-oscillator device designs that extenuate most of the issues faced by the typical trilayer designs. △ Less

Submitted 6 February, 2017; originally announced February 2017.

Comments: 9 pages, 10 figures and Supplementary Material

Journal ref: Phys. Rev. Applied 8, 064014 (2017)

Enhancement of Spin-transfer torque switching via resonant tunneling

Authors: Niladri Chatterji, Ashwin A Tulapurkar, Bhaskaran Muralidharan

Abstract: We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently… ▽ More We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies. △ Less

Submitted 24 November, 2014; originally announced November 2014.

Comments: 5 pages, 5 figures

Journal ref: Appl. Phys. Lett.,(105), 232410, 2014

Magneto-Seebeck effect in spin-valve with in-plane thermal gradient

Authors: S. Jain, D. D. Lam, A. Bose, H. Sharma, V. R. Palkar, C. V. Tomy, Y. Suzuki, A. A. Tulapurkar

Abstract: We present measurements of magneto-Seebeck effect on a spin valve with in-plane thermal gradient. We measured open circuit voltage and short circuit current by applying a temperature gradient across a spin valve stack, where one of the ferromagnetic layers is pinned. We found a clear hysteresis in these two quantities as a function of magnetic field. From these measurements, the magneto-Seebeck ef… ▽ More We present measurements of magneto-Seebeck effect on a spin valve with in-plane thermal gradient. We measured open circuit voltage and short circuit current by applying a temperature gradient across a spin valve stack, where one of the ferromagnetic layers is pinned. We found a clear hysteresis in these two quantities as a function of magnetic field. From these measurements, the magneto-Seebeck effect was found to be 0.82%. △ Less

Submitted 16 September, 2014; originally announced September 2014.

Comments: 10 Pages, 7 figures

RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance

Authors: K. Konishi, D. K. Dixit, A. A. Tulapurkar, S. Miwa, T. Nozaki, H. Kubota, A. Fukushima, S. Yuasa, Y. Suzuki

Abstract: The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction (MTJ) and an electrically isolated coplanar waveguide. The input RF voltage applied to the waveguide can excite the resonant dynamics in the free layer magnetizati… ▽ More The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction (MTJ) and an electrically isolated coplanar waveguide. The input RF voltage applied to the waveguide can excite the resonant dynamics in the free layer magnetization, leading to the generation of an output RF voltage under a DC bias current. The dependences of the RF voltage gain on the static external magnetic field strength and angle were systematically investigated. The design principles for the enhancement of the gain factor are also discussed. △ Less

Submitted 10 July, 2013; originally announced July 2013.

Comments: 12 pages, 3 figures

Journal ref: Appl. Phys. Lett. 102, 162409 (2013)

Spintronic Oscillator Based on Magnetic Field Feedback

Authors: D. Dixit, K. Konishi, C. V. Tomy, Y. Suzuki, A. A. Tulapurkar

Abstract: We present a circuit design of a spintronic oscillator based on magnetic tunnel junction. In this design, a dc current is passed through a magnetic tunnel junction which is connected to a feed-back wire below it. Any fluctuation in the magnetization direction of the free layer of MTJ, drives a fluctuating current through the feed-back wire, which exerts a magnetic field on the free layer. This in… ▽ More We present a circuit design of a spintronic oscillator based on magnetic tunnel junction. In this design, a dc current is passed through a magnetic tunnel junction which is connected to a feed-back wire below it. Any fluctuation in the magnetization direction of the free layer of MTJ, drives a fluctuating current through the feed-back wire, which exerts a magnetic field on the free layer. This in turn can amplify the magnetization fluctuations of the free layer. If the dc current passing through the MTJ is more than a critical value, continuous precessing states of the magnetization are possible. △ Less

Submitted 10 July, 2013; originally announced July 2013.

Comments: 8 pages, 3 figures

Journal ref: Appl. Phys. Lett. 101, 122410 (2012)

Establishment of a stable vortex state in the peak effect region in a weakly pinned superconductor CeRu_2

Authors: A. A. Tulapurkar, D. Heidarian, S. Sarkar, S. Ramakrishnan, A. K. Grover, E. Yamamoto, Y. Haga, M. Hedo, Y. Inada, Y. Onuki

Abstract: We present magnetization data on a weakly pinned CeRu_2 single crystal showing the existence of a stable state of the vortex lattice in the peak effect region. The stable state is achieved by cycling the magnetic field by small amplitude. This stable state is characterized by a unique value of critical current density (J_c), independent of the magnetic history of the sample. The results support… ▽ More We present magnetization data on a weakly pinned CeRu_2 single crystal showing the existence of a stable state of the vortex lattice in the peak effect region. The stable state is achieved by cycling the magnetic field by small amplitude. This stable state is characterized by a unique value of critical current density (J_c), independent of the magnetic history of the sample. The results support the recent model proposed by Ravikumar et al \cite{r39} on the history dependence of the J_c. △ Less

Submitted 5 September, 2000; originally announced September 2000.

Comments: 6 pages and 5 figures

Local magnetism of isolated Mo atoms at substitutional and interstitial sites in Yb metal : Experiment and Theory

Authors: A. A. Tulapurkar, S. N. Mishra, R. G. Pillay, H. G. Salunke, G. P. Das, S. Cottenier

Abstract: Using TDPAD experiment and local spin density calculations, we have observed large 4d moments on isolated Mo atoms at substitutional and octahedral interstitial lattice sites in Yb metal, showing Curie-Weiss local susceptibility and Korringa like spin relaxation rate. As a surprising feature, despite strong hybridization with the Yb neighbours, interstitial Mo atoms show high moment stability wi… ▽ More Using TDPAD experiment and local spin density calculations, we have observed large 4d moments on isolated Mo atoms at substitutional and octahedral interstitial lattice sites in Yb metal, showing Curie-Weiss local susceptibility and Korringa like spin relaxation rate. As a surprising feature, despite strong hybridization with the Yb neighbours, interstitial Mo atoms show high moment stability with small Kondo temperature. While, magnetism of Mo, at substitutional site is consistent with Kondo type antiferromagnetic d-sp exchange interaction, we suggest that moment stability at the interstitial site is strongly influenced by ferromagnetic polarization of Yb-4f5d band electrons. △ Less

Submitted 4 May, 2000; originally announced May 2000.

Comments: 4 pages, 4 figures