Showing 1–40 of 40 results for author: Tulapurkar, A

Ultrahigh Frequency and Multi-channel Output in Skyrmion Based Nano-oscillator

Authors: Abhishek Sharma, Saumya Gupta, Debasis Das, Ashwin. A. Tulapurkar, Bhaskaran Muralidharan

Abstract: Spintronic nano-oscillators can generate tunable microwave signals that find a wide range of applications in the field of telecommunication to modern neuromorphic computing systems. Among other spintronic devices, a magnetic skyrmion is a promising candidate for the next generation of low-power devices due to its small size and topological stability. In this work, we propose a multi-channel oscill… ▽ More Spintronic nano-oscillators can generate tunable microwave signals that find a wide range of applications in the field of telecommunication to modern neuromorphic computing systems. Among other spintronic devices, a magnetic skyrmion is a promising candidate for the next generation of low-power devices due to its small size and topological stability. In this work, we propose a multi-channel oscillator design based on the synthetic anti-ferromagnetic (SAF) skyrmion pair. The mitigation of the skyrmion Hall effect in SAF and the associated decimation of the Magnus force endows the proposed oscillator with an ultra-high frequency of 41GHz and a multi-channel frequency output driven by the same current. The ultrahigh operational frequency represents an $\sim$342 times improvement compared to the monolayer single skyrmion oscillator featuring a constant uniaxial anisotropy profile. Using micromagnetic simulations, we demonstrate the effectiveness of our proposed multi-channel oscillator design by introducing multi-channel nanotracks along with multiple skyrmions for enhanced frequency operation. The ultrahigh operational frequency and multi-channel output are attributed to three key factors: The oscillator design accounting for a finite spin-flip length of the spacer (such as Ru) material, tangential velocity proportionality on input spin current along with weak dependence on the radius of rotation of the skyrmion-pair, skyrmion interlocking in the channel enabled by the multi-channel high Ku rings and skyrmion-skyrmion repulsion, therefore resulting ultrahigh frequency and multi-channel outputs. △ Less

Submitted 20 March, 2024; originally announced March 2024.

Effect of Edge Roughness on resistance and switching voltage of Magnetic Tunnel Junctions

Authors: Rachit R. Pandey, Sutapa Dutta, Heston A. Mendonca, Ashwin A. Tulapurkar

Abstract: We investigate the impact of edge roughness on the electrical transport properties of magnetic tunnel junctions using non-equilibrium Greens function formalism. We have modeled edge roughness as a stochastic variation in the cross-sectional profile of magnetic tunnel junction characterized by the stretched exponential decay of the correlation function. The stochastic variation in the shape and siz… ▽ More We investigate the impact of edge roughness on the electrical transport properties of magnetic tunnel junctions using non-equilibrium Greens function formalism. We have modeled edge roughness as a stochastic variation in the cross-sectional profile of magnetic tunnel junction characterized by the stretched exponential decay of the correlation function. The stochastic variation in the shape and size changes the transverse energy mode profile and gives rise to the variations in the resistance and switching voltage of the magnetic tunnel junction. We find that the variations are larger as the magnetic tunnel junction size is scaled down due to the quantum confinement effect. A model is proposed for the efficient calculation of edge roughness effects by approximating the cross-sectional geometry to a circle with the same cross-sectional area. Further improvement can be obtained by approximating the cross-sectional area to an ellipse with an aspect ratio determined by the first transverse eigenvalue corresponding to the 2D cross section. These results would be useful for reliable design of the spin transfer torque-magnetic random access memory (STT-MRAM) with ultra-small magnetic tunnel junctions. △ Less

Submitted 31 December, 2022; originally announced January 2023.

Comments: 3 pages, 3 figures

Journal ref: IEEE Electron Device Letters.44(2023).745-748

Interfacial and bulk spin Hall contributions to field-like spin-orbit torque generated by Iridium

Authors: Sutapa Dutta, Arnab Bose, A. A. Tulapurkar, R. A. Buhrman, D. C. Ralph

Abstract: We present measurements of spin orbit torques generated by Ir as a function of film thickness in sputtered Ir/CoFeB and Ir/Co samples. We find that Ir provides a dam**-like component of spin orbit torque with a maximum spin torque conductivity 1.4e5 in SI unit and a maximum spin-torque efficiency of 0.04, which is sufficient to drive switching in an 0.8 nm film of CoFeB with perpendicular magnet… ▽ More We present measurements of spin orbit torques generated by Ir as a function of film thickness in sputtered Ir/CoFeB and Ir/Co samples. We find that Ir provides a dam**-like component of spin orbit torque with a maximum spin torque conductivity 1.4e5 in SI unit and a maximum spin-torque efficiency of 0.04, which is sufficient to drive switching in an 0.8 nm film of CoFeB with perpendicular magnetic anisotropy. We also observe a surprisingly large field like spin orbit torque. Measurements as a function of Ir thickness indicate a substantial contribution to the FLT from an interface mechanism so that in the ultrathin limit there is a non-zero FLT with a maximum torque conductivity -5.0E4 in the SI unit. When the Ir film thickness becomes comparable to or greater than its spin diffusion length, 1.6 nm, there is also a smaller bulk contribution to the fieldlike torque. △ Less

Submitted 6 May, 2021; originally announced May 2021.

Transmission based tomography for spin qubits

Authors: Amritesh Sharma, Ashwin A. Tulapurkar

Abstract: We consider a system of static spin qubits embedded in a one-dimensional spin coherent channel and develop a scheme to readout the state of one and two qubits separately. We use unpolarized flying qubits for this purpose that scatter off from the static qubits due to the Heisenberg exchange interaction. Analysing the transmission coefficient as a function of density matrix elements along with addi… ▽ More We consider a system of static spin qubits embedded in a one-dimensional spin coherent channel and develop a scheme to readout the state of one and two qubits separately. We use unpolarized flying qubits for this purpose that scatter off from the static qubits due to the Heisenberg exchange interaction. Analysing the transmission coefficient as a function of density matrix elements along with additional unitary gates we reconstruct the state of static qubits. △ Less

Submitted 23 January, 2021; originally announced January 2021.

Comments: comments on the paper are welcome

Journal ref: Phys. Rev. A 103, 052430 (2021)

Quantum state preparation of spin eigenstates including the Dicke states with generalized all-coupled interaction in a spintronic quantum computing architecture

Authors: Amritesh Sharma, Ashwin A. Tulapurkar

Abstract: There has been an extensive development in the use of multi-partite entanglement as a resource for various quantum information processing tasks. In this paper we focus on preparing arbitrary spin eigenstates whose subset contain important entangled resources like Dicke states as well as some other sub-radiant states that are difficult to prepare. Leveraging on the symmetry of these states we consi… ▽ More There has been an extensive development in the use of multi-partite entanglement as a resource for various quantum information processing tasks. In this paper we focus on preparing arbitrary spin eigenstates whose subset contain important entangled resources like Dicke states as well as some other sub-radiant states that are difficult to prepare. Leveraging on the symmetry of these states we consider uniform pairwise exchange coupling between every pair of qubits. Starting from a product state of a given spin eigenstate with a single qubit state, another spin eigenstate can be prepared using simple time evolutions. This expansion paves a deterministic approach to prepare arbitrary Dicke states in linear steps. We discuss an improvement in this cost building up on a previous work for W states deterministic preparation in logarithmic circuit depth. The modified algorithm requires several iterations of pum** spin angular momentum into the system and is akin to the amplitude amplification in Grover search. As a use case to demonstrate the proposed scheme, we choose a system of non-interacting static spin qubits connected to a ferromagnetic reservoir. The flying qubits emerging from the reservoir locally interact with static qubits successively, mediating an in-direct exchange interaction between all the pairs. △ Less

Submitted 15 August, 2020; originally announced August 2020.

Comments: Comments on the paper are welcome

Proposal for a graphene based nano-electro-mechanical reference piezoresistor

Authors: Abhinaba Sinha, Abhishek Sharma, Pankaj Priyadarshi, Ashwin Tulapurkar, Bhaskaran Muralidharan

Abstract: Motivated by the recent prediction of anisotropy in piezoresistance of ballistic graphene along longitudinal and transverse directions, we investigate the angular gauge factor of graphene in the ballistic and diffusive regimes using highly efficient quantum transport models. It is shown that the angular guage factor in both ballistic and diffusive graphene between $0^{\circ}$ to $90^{\circ}$ bears… ▽ More Motivated by the recent prediction of anisotropy in piezoresistance of ballistic graphene along longitudinal and transverse directions, we investigate the angular gauge factor of graphene in the ballistic and diffusive regimes using highly efficient quantum transport models. It is shown that the angular guage factor in both ballistic and diffusive graphene between $0^{\circ}$ to $90^{\circ}$ bears a sinusoidal relation with a periodicity of $π$ due to the reduction of six-fold symmetry into a two-fold symmetry as a result of applied strain. The angular gauge factor is zero at critical angles $20^{\circ}$ and $56^{\circ}$ in ballistic and diffusive regimes respectively. Based on these findings, we propose a graphene based ballistic nano-sensor which can be used as a reference piezoresistor in a Wheatstone bridge read-out technique. The reference sensors proposed here are unsusceptible to inherent residual strain present in strain sensors and unwanted strain generated by the vapours in explosives detection. The theoretical models developed in this paper can be applied to explore similar applications in other 2D-Dirac materials. The proposals made here potentially pave the way for implementation of NEMS strain sensors based on the principle of ballistic transport, which will eventually replace MEMS piezoresistance sensors with a decrease in feature size. The presence of strain insenstive ``critical angle'' in graphene may be useful in flexible wearable electronics also. △ Less

Submitted 27 June, 2020; originally announced June 2020.

Generation of n-qubit W states using Spin Torque

Authors: Amritesh Sharma, Ashwin A. Tulapurkar

Abstract: We examine here a scheme to generate a W state of an n-qubit system with all-to-all pairwise exchange interaction between n qubits. This relies on sharing of superposed excitations of a smaller number of $q$ qubits among others. We present a bound on the maximal jumps from q to n and formalize a scheme to generate $W_n$ state in $\mathcal{O}(\log_4 n)$ stages. We demonstrate this scheme in the con… ▽ More We examine here a scheme to generate a W state of an n-qubit system with all-to-all pairwise exchange interaction between n qubits. This relies on sharing of superposed excitations of a smaller number of $q$ qubits among others. We present a bound on the maximal jumps from q to n and formalize a scheme to generate $W_n$ state in $\mathcal{O}(\log_4 n)$ stages. We demonstrate this scheme in the context of spin torque based quantum computing architecture that are characterized by repeated interactions between static and flying qubits. △ Less

Submitted 6 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. A 101, 062330 (2020)

Investigation of the phase separation property in La$_{0.2}$Pr$_{0.4}$Ca$_{0.4}$MnO$_3$ manganite

Authors: Deepak Kumar, Ashwin A. Tulapurkar, C. V. Tomy

Abstract: We report a comprehensive investigation of La0.2Pr0.4Ca0.4MnO3 to clarify the micrometre scale phase separation phenomenon in the mixed valent manganite (La,Pr,Ca)MnO3. The compound shows multiple magnetic transitions, in which the charge-ordered state is converted into a ferromagnetic state in steps with the application of a magnetic field. The ac susceptibility measurements show that the glassy… ▽ More We report a comprehensive investigation of La0.2Pr0.4Ca0.4MnO3 to clarify the micrometre scale phase separation phenomenon in the mixed valent manganite (La,Pr,Ca)MnO3. The compound shows multiple magnetic transitions, in which the charge-ordered state is converted into a ferromagnetic state in steps with the application of a magnetic field. The ac susceptibility measurements show that the glassy transition at low temperatures does not depend on the frequency, thus indicating the absence of any spin glass behaviour. Magnetization as well as heat capacity measurements indicate that this low temperature transition is magnetic field dependent. The field dependent resistivity at 2K shows a sharp drop indicating that the sample behaviour changes from a high resistive state to a low resistive state, corroborating the conversion of charge-ordered insulating (COI) phase to a ferromagnetic metallic (FMM) phase. Our results point towards the existence of phase separation, rigidity of the low temperature glassy-like phase as well as the conversion of COI phase to FMM phase by the application of magnetic fields. △ Less

Submitted 20 November, 2019; originally announced November 2019.

Comments: 5 pages, 6 figures

Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory

Authors: Abhishek Sharma, Ashwin Tulapurkar, Bhaskaran Muralidharan

Abstract: We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as anti-reflection coating and resonance for spintronic devices, we present the design of an STT-MRAM device with improved features when compared with a traditional tril… ▽ More We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as anti-reflection coating and resonance for spintronic devices, we present the design of an STT-MRAM device with improved features when compared with a traditional trilayer device. The device consists of a superlattice heterostructure terminated with the anti-reflective regions sandwiched between the fixed and free ferromagnetic layers. Employing the Green's function spin transport formalism coupled self-consistently with the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation, we present the design of an STT-MRAM based on the band-pass filtering having an ultra-high TMR (3.5*10e4) and large spin current. We demonstrate that the STT-MRAM design having band-pass spin filtering are nearly 1100% more energy efficient than traditional trilayer magnetic tunnel junction (MTJ) based STT-MRAM. We also present detailed probabilistic switching and energy analysis for a trilayer MTJ and band-pass filtering based STT-MRAM. Our predictions serve as a template to consider the heterostructures for next-generation spintronic device applications. △ Less

Submitted 17 August, 2019; originally announced August 2019.

Giant enhancement of Piezo-resistance in ballistic graphene due to transverse electric fields

Authors: Abhinaba Sinha, Abhishek Sharma, Ashwin Tulapurkar, V Ramgopal Rao, Bhaskaran Muralidharan

Abstract: We investigate the longitudinal and transverse piezoresistance effect in suspended graphene in the ballistic regime. Utilizing parametrized tight binding Hamiltonian from ab initio calculations along with Landauer quantum transport formalism, we devise a methodology to evaluate the piezoresistance effect in 2D materials especially in graphene. We evaluate the longitudinal and transverse gauge fact… ▽ More We investigate the longitudinal and transverse piezoresistance effect in suspended graphene in the ballistic regime. Utilizing parametrized tight binding Hamiltonian from ab initio calculations along with Landauer quantum transport formalism, we devise a methodology to evaluate the piezoresistance effect in 2D materials especially in graphene. We evaluate the longitudinal and transverse gauge factor of graphene along armchair and zigzag directions in the linear elastic limit ($0\%$-$10\%$). The longitudinal and transverse gauge factors are identical along armchair and zigzag directions. Our model predicts a significant variation ($\approx 1000\% $ change) in transverse gauge factor compared to longitudinal gauge factor along with sign inversion. The calculated value of longitudinal gauge factor is $\approx 0.3$ whereas the transverse gauge factor is $\approx -3.3$. We rationalize our prediction using deformation of Dirac cone and change in separation between transverse modes due to longitudinal and transverse strain, leading to an inverse change in gauge factor. The results obtained herein may serve as a template for high strain piezoresistance effect of graphene in nano electromechanical systems. △ Less

Submitted 5 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. Materials 3, 124005 (2019)

Skyrmion Based Spin-Torque Nano-Oscillator

Authors: Debasis Das, Bhaskaran Muralidharan, Ashwin Tulapurkar

Abstract: Using micromagnetic simulation, we investigate the self-sustained oscillation of magnetic skyrmion in a ferromagnetic circular nanodot, driven by spin-torque which is generated from a reference layer of a circular nanopillar device. We demonstrate, by lowering the value of uniaxial anisotropy constant ($K_u$), the velocity of the skyrmion can be increased and using this property, gyration frequenc… ▽ More Using micromagnetic simulation, we investigate the self-sustained oscillation of magnetic skyrmion in a ferromagnetic circular nanodot, driven by spin-torque which is generated from a reference layer of a circular nanopillar device. We demonstrate, by lowering the value of uniaxial anisotropy constant ($K_u$), the velocity of the skyrmion can be increased and using this property, gyration frequency of the skyrmion oscillator can be enhanced. Annihilation of the skyrmion at higher current densities, limit the gyration frequency of the oscillator, whereas by modifying the $K_u$ value at the edge of nanodot, we are able to protect the skyrmion from being annihilated at higher current densities which in turn, increases the gyration frequency of the skyrmion based oscillator. By linear fitting the velocity value, obtained from the motion of the skyrmion in a nanostrip, we also predict the gyration frequency of the skyrmion in the nanodot which proves the validity of our idea in an intuitive way. We have also varied the radius of the nanodisk to see its effect on skyrmion. △ Less

Submitted 9 May, 2019; v1 submitted 10 February, 2019; originally announced February 2019.

Journal ref: Journal of Magnetism and Magnetic Materials 491 (2019) 165608

Effect of B-site bismuth do** on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films

Authors: Himanshu Sharma, Deepak Kumar, Ashwin Tulapurkar, C. V. Tomy

Abstract: The magnetic properties in manganite have been found to be highly sensitive to the do** and structural manipulations. Here, we report the effect of B-site bismuth do** on the magnetic and transport properties in La0.5Ca0.5Mn1-xBixO3 (LCMBO) thin films (for x = 0, 0.02 and 0.05) for high-efficiency spintronics devices. For thin film of LCMBO (with x = 0.02), a significant increase in the magnet… ▽ More The magnetic properties in manganite have been found to be highly sensitive to the do** and structural manipulations. Here, we report the effect of B-site bismuth do** on the magnetic and transport properties in La0.5Ca0.5Mn1-xBixO3 (LCMBO) thin films (for x = 0, 0.02 and 0.05) for high-efficiency spintronics devices. For thin film of LCMBO (with x = 0.02), a significant increase in the magnetization and ferromagnetic ordering temperature (TC) are observed. Also, about 98% magnetoresistance (MR) and unusually large (~ 42%) anisotropic magnetoresistance (AMR) is observed at 50 K in the same LCMBO (for x = 0.02) thin film. This observed improvement in TC, MR and AMR in LCMBO (with x = 0.02) thin film may be attributed to the modulation of the trapped electrons through JT-distortions due to the replacement of Mn+3 ions by larger Bi+3 ions. With further increase in bismuth do** (for x = 0.05) at the B-site, a significant decrease in magnetization and TC have been observed. △ Less

Submitted 23 July, 2018; originally announced July 2018.

Comments: 15 pages, 10 figures

Effects of Elastic Dephasing on Scaling of ultra-small Magnetic Tunnel Junctions

Authors: Debasis Das, Ashwin Tulapurkar, Bhaskaran Muralidharan

Abstract: The study of the effects of scaling on magnetic tunnel junction (MTJ) devices has become an important topic in the field of spin-based memory devices. Here, we investigate the effect of elastic dephasing on trilayer and pentalayer MTJ considered at small transverse cross-sectional areas using the non-equilibrium Green's function spin transport formalism. We consider the structures with and without… ▽ More The study of the effects of scaling on magnetic tunnel junction (MTJ) devices has become an important topic in the field of spin-based memory devices. Here, we investigate the effect of elastic dephasing on trilayer and pentalayer MTJ considered at small transverse cross-sectional areas using the non-equilibrium Green's function spin transport formalism. We consider the structures with and without dephasing effects and clearly point out as to how the tunnel magnetoresistance effect gets affected by dephasing. We attribute the trends noted by analyzing the transmission spectra and hence the currents across the devices. Although dephasing affects the TMR values for both devices, we note that the obtained TMR values are still in a reasonable range that may not hinder their usability for practical applications. △ Less

Submitted 23 July, 2018; v1 submitted 7 July, 2018; originally announced July 2018.

Control of magnetization dynamics by spin Nernst torque

Authors: Arnab Bose, Ambika Shankar Shukla, Sutapa Dutta, Swapnil Bhuktare, Hanuman Singh, Ashwin A. Tulapurkar

Abstract: Control of magnetization dynamics is one of the primary goals in spintronics. It has been demonstrated using spin Hall effect i.e charge current to spin current conversion in non-magnetic metal which has large spin-orbit coupling such as Pt, W etc. Recently different groups have shown generation of spin current in Pt, W while thermal gradient is created by virtue of spin Nernst effect. In this wor… ▽ More Control of magnetization dynamics is one of the primary goals in spintronics. It has been demonstrated using spin Hall effect i.e charge current to spin current conversion in non-magnetic metal which has large spin-orbit coupling such as Pt, W etc. Recently different groups have shown generation of spin current in Pt, W while thermal gradient is created by virtue of spin Nernst effect. In this work we show the evidence of magnetization control by spin Nernst torque in Pt/Py bi-layer. We compared relative strength of spin Nernst Torque and spin Hall torque by measuring the systematic variation of magnetic linewidth on application of constant heat or charge current. Spin-torque ferromagnetic resonance (ST-FMR) technique is adopted to excite the magnet and to measure line-width precisely from the symmetric and anti-symmetric voltage component. Control of magnetization dynamics by spin Nernst torque will emerge as an alternative way to manipulate nano-magnets. △ Less

Submitted 5 June, 2018; originally announced June 2018.

Report number: Physical Review B 98, 184412

Journal ref: Phys. Rev. B 98, 184412 (2018)

Structure, magnetic and transport properties of epitaxial thin films of equiatomic CoFeMnGe quaternary Heusler alloy

Authors: Varun K. Kushwaha, Jyoti Rani, C. V. Tomy, Ashwin Tulapurkar

Abstract: Future spintronics requires the realization of thin film of half-metallic ferromagnets having high Curie temperature and 100\% spin polarization at the Fermi level for potential spintronics applications. In this paper, we report the epitaxial thin films growth of half-metallic CoFeMnGe Heusler alloy on MgO (001) substrate using pulsed laser deposition system, along with the study of structural, ma… ▽ More Future spintronics requires the realization of thin film of half-metallic ferromagnets having high Curie temperature and 100\% spin polarization at the Fermi level for potential spintronics applications. In this paper, we report the epitaxial thin films growth of half-metallic CoFeMnGe Heusler alloy on MgO (001) substrate using pulsed laser deposition system, along with the study of structural, magnetic and transport properties. The magnetic property measurements of the thin film suggest a soft ferromagnetic state at room temperature with an in-plane magnetic anisotropy and a Curie temperature well above the room temperature. Anisotropic magnetoresistance (AMR) ratio and temperature dependent electrical resistivity measurements of the thin film indicate the compound to be half-metallic in nature and therefore suitable for the fabrications of spintronics devices. △ Less

Submitted 7 February, 2018; originally announced February 2018.

Comments: 5 pages, 6 images, Quaternary Heusler alloys, CoFeMnGe, Thin films, Half-metal, Spintronics, Ferromagnetic materials, Anisotropic magnetoresistance

Band-pass superlattice magnetic tunnel junctions

Authors: Abhishek Sharma, Ashwin. A. Tulapurkar, Bhaskaran Muralidharan

Abstract: Significant scientific and technological progress in the field of spintronics is based on trilayer magnetic tunnel junction devices which principally rely on the physics of single barrier tunneling. While technologically relevant devices have been prototyped, the physics of single barrier tunneling poses ultimate limitations on the performance of magnetic tunnel junction devices. Here, we propose… ▽ More Significant scientific and technological progress in the field of spintronics is based on trilayer magnetic tunnel junction devices which principally rely on the physics of single barrier tunneling. While technologically relevant devices have been prototyped, the physics of single barrier tunneling poses ultimate limitations on the performance of magnetic tunnel junction devices. Here, we propose a fresh route toward high performance magnetic tunnel junctions by making electronic analogs of optical phenomena such as anti-reflections and Fabry-Pèrot resonances. The devices we propose feature anti-reflection enabled superlattice heterostructures sandwiched between the fixed and the free ferromagnets of the magnetic tunnel junction structure. Our predictions are based on the non-equilibrium Green's function spin transport formalism coupled self-consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation. Owing to the physics of bandpass spin filtering in the bandpass superlattice magnetic tunnel junction device, we demonstrate an ultra-high boost in the tunnel magneto-resistance (TMR$\approx5\times10^4\%$) and nearly 92% suppression of spin transfer torque switching bias in comparison to a traditional trilayer magnetic tunnel junction device. We rationalize improvised spin transfer torque switching via analysis of the Slonczewski spin current transmission spectra. The proof of concepts presented here can lead to next-generation spintronics device design harvesting the rich physics of superlattice heterostructures and exploiting spintronic analogs of optical phenomena. △ Less

Submitted 13 November, 2019; v1 submitted 29 January, 2018; originally announced January 2018.

Comments: 5 pages

Scaling Projections on Spin Transfer Torque Magnetic Tunnel Junctions

Authors: Debasis Das, Ashwin Tulapurkar, Bhaskaran Muralidharan

Abstract: We investigate scaling of technologically relevant magnetic tunnel junction devices in the trilayer and pentalayer configurations by varying the cross-sectional area along the transverse direction using the non-equilibrium Green's function spin transport formalism. We study the geometry dependence by considering square and circular cross-sections. As the transverse dimension in each case reduces,… ▽ More We investigate scaling of technologically relevant magnetic tunnel junction devices in the trilayer and pentalayer configurations by varying the cross-sectional area along the transverse direction using the non-equilibrium Green's function spin transport formalism. We study the geometry dependence by considering square and circular cross-sections. As the transverse dimension in each case reduces, we demonstrate that the transverse mode energy profile plays a major role in the resistance-area product. Both types of devices show constant tunnel magnetoresistance at larger cross-sectional areas but achieve ultra-high magnetoresistance at small cross-sectional areas, while maintaining low resistance-area products. We notice that although the critical switching voltage for switching the magnetization of the free layer nanomagnet in the trilayer case remains constant at larger areas, it needs more energy to switch at smaller areas. In the pentalayer case, we observe an oscillatory behavior at smaller areas as a result of double barrier tunneling. We also describe how switching characteristics of both kinds of devices are affected by the scaling. △ Less

Submitted 12 December, 2017; originally announced December 2017.

Direct Observation of the Reciprocity between Spin Current and Phonon Interconversion

Authors: Swapnil Bhuktare, Hanuman Singh, Arnab Bose, Ashwin. A. Tulapurkar

Abstract: Spin current has emerged as a leading candidate for manipulation of spins in a nano-magnet. We here experimentally show another utility of spin current viz. it can be used for generation of phonons. Within the same experimental setup, we also demonstrate the inverse effect of generation of spin current by phonons. To demonstrate them, we measured the scattering-matrix of a two-port device with int… ▽ More Spin current has emerged as a leading candidate for manipulation of spins in a nano-magnet. We here experimentally show another utility of spin current viz. it can be used for generation of phonons. Within the same experimental setup, we also demonstrate the inverse effect of generation of spin current by phonons. To demonstrate them, we measured the scattering-matrix of a two-port device with interdigital transducers as one port and array of Ni/Pt lines as second port on piezoelectric substrate. The off-diagonal elements which correspond to transmission between the ports, were found to have 180 degree relative phase shift. The transmission of electrical signal from port 2 to 1 corresponds to generation of phonons from spin-current, while transmission from port 1 to 2 corresponds to the inverse effect. These results could be useful for designing spin-current based gyrators. △ Less

Submitted 7 December, 2017; originally announced December 2017.

Integer, fractional and side band injection locking of spintronic feedback nano-oscillator to microwave signal

Authors: Hanuman Singh, K. Konishi, S. Bhuktare, A. Bose, S. Miwa, A. Fukushima, K. Yakushiji, S. Yuasa, H. Kubota, Y. Suzuki, A. A. Tulapurkar

Abstract: In this article we demonstrate the injection locking of recently demonstrated spintronic feedback nano oscillator to microwave magnetic fields at integers as well fractional multiples of its auto oscillation frequency. Feedback oscillators have delay as a new degree of freedom which is absent for spin-transfer torque based oscillators, which gives rise to side peaks along with a main peak. We show… ▽ More In this article we demonstrate the injection locking of recently demonstrated spintronic feedback nano oscillator to microwave magnetic fields at integers as well fractional multiples of its auto oscillation frequency. Feedback oscillators have delay as a new degree of freedom which is absent for spin-transfer torque based oscillators, which gives rise to side peaks along with a main peak. We show that it is also possible to lock the oscillator on its side band peaks, which opens a new avenue to phase locked oscillators with large frequency differences. We observe that for low driving fields, side band locking improves the quality factor of the main peak, whereas for higher driving fields the main peak is suppressed. Further, measurements at two field angles provide some insight into the role of symmetry of oscillation orbit in determining the fractional locking. △ Less

Submitted 2 November, 2017; originally announced November 2017.

Comments: 16 pages, 6 figure(Manuscript), 3 figure( supplementary information),Accepted ( Physical Review Applied)

Journal ref: Phys. Rev. Applied 8, 064011 (2017)

Possible spin gapless semiconductor type behaviour in CoFeMnSi epitaxial thin films

Authors: Varun K. Kushwaha, Jyoti Rani, Ashwin Tulapurkar, C. V. Tomy

Abstract: Spin-gapless semiconductors with their unique band structures have recently attracted much attention due to their interesting transport properties that can be utilized in spintronics applications. We have successfully deposited the thin films of quaternary spin-gapless semiconductor CoFeMnSi Heusler alloy on MgO (001) substrates using a pulsed laser deposition system. These films show epitaxial gr… ▽ More Spin-gapless semiconductors with their unique band structures have recently attracted much attention due to their interesting transport properties that can be utilized in spintronics applications. We have successfully deposited the thin films of quaternary spin-gapless semiconductor CoFeMnSi Heusler alloy on MgO (001) substrates using a pulsed laser deposition system. These films show epitaxial growth along (001) direction and display uniform and smooth crystalline surface. The magnetic properties reveal that the film is ferromagnetically soft along the in-plane direction and its Curie temperature is well above 400 K. The electrical conductivity of the film is low and exhibits a nearly temperature independent semiconducting behaviour. The estimated temperature coefficient of resistivity for the film is -7x10^-10 Ohm.m/K, which is comparable to the values reported for spin-gapless semiconductors. △ Less

Submitted 14 October, 2017; v1 submitted 17 July, 2017; originally announced July 2017.

Comments: CoFeMnSi, Thin films, Epitaxy, Heusler alloys, Spintronics, Spin-gapless semiconductor, Electrical conductivity, Band Structure, 5 pages, 4 figures

Sign reversal of field like spin-orbit torque in ultrathin Chromium/Nickel bilayer

Authors: Arnab Bose, Hanuman Singh, Swapnil Bhuktare, Sutapa Dutta, Ashwin A. Tulapurkar

Abstract: In this work report unconventional sign change of field like spin orbit torque in ultra-thin Chromium(1.5nm-5nm)/Nickel(8nm) bi-layer. We performed standard spin-torque ferromagnetic resonance (ST-FMR) experiment in Cr/Ni bi-layer by passing radio frequency current and measuring DC voltage. We observe that when thickness of Cr layer is critically low (<6nm) spin orbit torque by Cr on Ni significan… ▽ More In this work report unconventional sign change of field like spin orbit torque in ultra-thin Chromium(1.5nm-5nm)/Nickel(8nm) bi-layer. We performed standard spin-torque ferromagnetic resonance (ST-FMR) experiment in Cr/Ni bi-layer by passing radio frequency current and measuring DC voltage. We observe that when thickness of Cr layer is critically low (<6nm) spin orbit torque by Cr on Ni significantly increases. Most importantly the sign of field like torque is opposite to the Oersted field generated torque. To verify interracial nature of this torque, 2 nm thin Cu is inserted between Cr and Ni and field like torque behaves same as Oersted field induced torque. Hence possible origin of such unconventional sign change of field like torque could be inter-facial Rashba like spin orbit interaction which is present between Cr and Ni but vanishes in Cr/Cu/Ni hetero-structure. From our experiment we can estimate that approximately 35 Oe of effective Rashba like magnetic field is created on 8 nm thicker Ni layer, when 1E12 A/m^2 current flows through Cr layer. All experiments are done at room temperature. So Cr thin film is expected to behave like paramagnet (Neel temperature of bulk Cr is 311K). Hence Cr can be a good choice as a heavy metal to employ large spin orbit torque combining bulk spin Hall effect and inter-facial Rashba interaction. △ Less

Submitted 22 June, 2017; originally announced June 2017.

Report number: Phys. Rev. Appl. 9, 014022 (2018)

Observation of anomalous spin-torque generated by a ferromagnet

Authors: Arnab Bose, Duc Duong Lam, Swapnil Bhuktare, Sutapa Dutta, Hanuman Singh, Shinji Miwa, Ashwin A. tulapurkar

Abstract: In this work we report observation of in-plane current induced out-of-plane magnetic field driven torque in spin valve structure. Since ferromagnet has high spin orbit coupling it is expected to be the source of spin-orbit-torque as it possesses anomalous-Hall-effect (AHE: equivalent to spin Hall effect in heavy metal). So we have carried out spin-torque ferromagnetic resonance (ST-FMR) experiment… ▽ More In this work we report observation of in-plane current induced out-of-plane magnetic field driven torque in spin valve structure. Since ferromagnet has high spin orbit coupling it is expected to be the source of spin-orbit-torque as it possesses anomalous-Hall-effect (AHE: equivalent to spin Hall effect in heavy metal). So we have carried out spin-torque ferromagnetic resonance (ST-FMR) experiment in a spin valve (consists of a fixed magnet and a free magnet which are separated by Cu spacer), passing in-plane radio frequency current and measuring DC voltage. Our experimental results eventually indicate that spin torque exerted on the free magnet is not caused due to the spin current injection by the fixed magnet owing to its AHE, but it is originated from in-plane current driven out-of plane effective magnetic field. This is new class of spin torque which is completely different from Slonczewski-spin transfer torque and Rashba like field like torque. The effective out-of plane magnetic field depends on the direction of current (in-plane) and magnetization (in-plane) of the pinned layer. One possible mechanism behind this unconventional torque could be intefacial spin-scattering which is also origin of current in-plane GMR effect. Most importantly this effective out-of plane torque can be useful to switch out-of plane magnetic bits in spintronic memory application. △ Less

Submitted 22 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. Applied 9, 064026 (2018)

Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene

Authors: Sameer Grover, Anupama Joshi, Ashwin Tulapurkar, Mandar M. Deshmukh

Abstract: Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The presence of two Dirac peaks in the gating curve of the fabricated device confirms the formation of a p-n junction. At low temperatures, when the electrolyte is f… ▽ More Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The presence of two Dirac peaks in the gating curve of the fabricated device confirms the formation of a p-n junction. At low temperatures, when the electrolyte is frozen intentionally, the photovoltage exhibits a six-fold pattern indicative of the hot electron induced photothermoelectric effect that has also been seen in graphene p-n junctions made using metallic gates. We have observed that the photovoltage increases with decreasing temperature indicating a dominant role of supercollision scattering. Our technique can also be extended to other 2D materials and to finer features that will lead to p-n junctions which span a large area, like a superlattice, that can generate a larger photoresponse. Our work creating abrupt p-n junctions is distinct from previous works that use a source-drain bias voltage with a single ionic gate creating a spatially graded p-n junction. △ Less

Submitted 14 June, 2017; originally announced June 2017.

Journal ref: Scientific Reports 7, 3336 (2017)

Observation of Spin Nernst effect in Platinum

Authors: Arnab Bose, Swapnil Bhuktare, Hanuman Singh, Venu Gopal Achanta, Ashwin Tulapurkar

Abstract: Central focus of spintronics is concentrated on generation of pure spin current and associated spin torque. Pure spin current can be generated by spin Hall effect in heavy metals by passing charge current. By spin Seebeck effect pure spin current can also be generated in ferromagnet. In this work we experimentally demonstrate that if heavy metals like Platinum with high spin orbit coupling carry h… ▽ More Central focus of spintronics is concentrated on generation of pure spin current and associated spin torque. Pure spin current can be generated by spin Hall effect in heavy metals by passing charge current. By spin Seebeck effect pure spin current can also be generated in ferromagnet. In this work we experimentally demonstrate that if heavy metals like Platinum with high spin orbit coupling carry heat current it can convert it into spin current due to relativistic spin orbit interaction. This conversion of heat current into spin current in non magnet is equivalent of thermally driven spin Hall effect or it is known as spin Nernst effect. We observed spin Nernst effect in Ni/Pt bi-layer experimentally and we confirm that when Pt is replaced by low spin orbit material like Al spin Nernst effect significantly reduces. So we have detected spin Nernst effect unambiguously and compare its strength with electrical spin Hall effect. △ Less

Submitted 22 April, 2017; originally announced April 2017.

Journal ref: Applied Physics Letters, Vol 112, issue 16, start page 162401, year 2018

Resonant spin transfer torque nano-oscillators

Authors: Abhishek Sharma, Ashwin A Tulapurkar, Bhaskaran Muralidharan

Abstract: Spin transfer torque nano-oscillators are potential candidates for replacing the traditional inductor based voltage controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions which are disadvantaged by low power outputs and poor conversion efficiencies. In this letter, we theoretically propose to use resonant spin filtering in… ▽ More Spin transfer torque nano-oscillators are potential candidates for replacing the traditional inductor based voltage controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions which are disadvantaged by low power outputs and poor conversion efficiencies. In this letter, we theoretically propose to use resonant spin filtering in pentalayer magnetic tunnel junctions as a possible route to alleviate these issues and present device designs geared toward a high microwave output power and an efficient conversion of the d.c. input power. We attribute these robust qualities to the resulting non-trivial spin current profiles and the ultra high tunnel magnetoresistance, both arising from resonant spin filtering. The device designs are based on the nonequilibrium Green's function spin transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski's equation and the Poisson's equation. We demonstrate that the proposed structures facilitate oscillator designs featuring a large enhancement in microwave power of around $775\%$ and an efficiency enhancement of over $1300\%$ in comparison with typical trilayer designs. We also rationalize the optimum operating regions via an analysis of the dynamic and static device resistances. This work sets stage for pentalyer spin transfer torque nano-oscillator device designs that extenuate most of the issues faced by the typical trilayer designs. △ Less

Submitted 6 February, 2017; originally announced February 2017.

Comments: 9 pages, 10 figures and Supplementary Material

Journal ref: Phys. Rev. Applied 8, 064014 (2017)

Coherent microwave generation by spintronic feedback oscillator

Authors: Dinesh Kumar, K. Konishi, Nikhil Kumar, S. Miwa, A. Fukushima, K. Yakushiji, S. Yuasa, H. Kubota, C. V. Tomy, A. Prabhakar, Y. Suzuki, A. Tulapurkar

Abstract: The transfer of spin angular momentum to a nanomagnet from a spin polarized current provides an efficient means of controlling the magnetization direction in nanomagnets. A unique consequence of this spin torque is that the spontaneous oscillations of the magnetization can be induced by applying a combination of a dc bias current and a magnetic field. Here we experimentally demonstrate a different… ▽ More The transfer of spin angular momentum to a nanomagnet from a spin polarized current provides an efficient means of controlling the magnetization direction in nanomagnets. A unique consequence of this spin torque is that the spontaneous oscillations of the magnetization can be induced by applying a combination of a dc bias current and a magnetic field. Here we experimentally demonstrate a different effect, which can drive a nanomagnet into spontaneous oscillations without the need of external spin torque injection. For the demonstration of this effect, we use a nano-pillar of magnetic tunnel junction (MTJ) powered by a dc current and connected to a coplanar waveguide (CPW) lying above the free layer of the MTJ. Any fluctuation of the free layer magnetization is converted into oscillating voltage via the tunneling magneto-resistance effect and is fed back into the MTJ by the CPW through inductive coupling. As a result of this feedback, the magnetization of the free layer can be driven into a continual precession. The combination of MTJ and CPW behaves similar to a laser system and outputs a stable rf power with quality factor exceeding 10,000. △ Less

Submitted 12 August, 2016; originally announced August 2016.

Comments: 15 Pages, 6 Figures

Journal ref: Scientific Reports 6, 30747 (2016)

Ultra-sensitive nanoscale magnetic field sensors based on resonant spin filtering

Authors: Abhishek Sharma, Ashwin Tulapurkar, Bhaskaran Muralidharan

Abstract: Solid state magnetic field sensors based on magneto-resistance modulation find direct applications in communication devices, specifically in proximity detection, rotational reference detection and current sensing. In this work, we propose sensor structures based on the magneto-resistance physics of resonant spin-filtering and present device designs catered toward exceptional magnetic field sensing… ▽ More Solid state magnetic field sensors based on magneto-resistance modulation find direct applications in communication devices, specifically in proximity detection, rotational reference detection and current sensing. In this work, we propose sensor structures based on the magneto-resistance physics of resonant spin-filtering and present device designs catered toward exceptional magnetic field sensing capabilities. Using the non-equilibrium Green's function spin transport formalism self consistently coupled to the Poisson's equation, we present highly-tunable pentalayer magnetic tunnel junction structures that are capable of exhibiting an ultra-high peak tunnel magneto resistance $(\approx 2500 \%$). We show how this translates to device designs featuring an ultra-high current sensitivity enhancement of over 300\% in comparison with typical trilayer MTJ sensors, and a wider tunable range of field sensitivity. We also demonstrate that a dynamic variation in sensor functionalities with the structural landscape enables a superior design flexibility over typical trilayer sensors. An optimal design exhibiting close to a 700\% sensitivity increase as a result of angle dependent spin filtering is then presented.This work sets a stage to engineer spintronic building blocks via the design of functional structures tailored to exhibit ultra-sensitive spin filtering. △ Less

Submitted 14 February, 2016; originally announced February 2016.

Comments: 8 pages, 12 figures

Electric Field Controlled Magnetization and Charge-Ordering in Pr0.6Ca0.4MnO3

Authors: Himanshu Sharma, Geetha Balakrishnan, Don McKenzie Paul, A. Tulapurkar, C. V. Tomy

Abstract: In this paper, we present the observation of the electric field control on the charge-ordering and metamagnetic transitions during the magnetization measurements in a single crystal of Pr0.6Ca0.4MnO3 (PCMO). We have demonstrated that the complete melting of charge ordering can be realized in a single crystal of PCMO by applying a voltage as small as 2.5 V, which otherwise needs magnetic fields in… ▽ More In this paper, we present the observation of the electric field control on the charge-ordering and metamagnetic transitions during the magnetization measurements in a single crystal of Pr0.6Ca0.4MnO3 (PCMO). We have demonstrated that the complete melting of charge ordering can be realized in a single crystal of PCMO by applying a voltage as small as 2.5 V, which otherwise needs magnetic fields in excess of 11 T. The maximum change in magnetization with applied voltage occurs across the charge-ordering transition temperature (TCO = 235 K). Even though the electric field does not seem to affect the magnetic ordering, we see a clear evidence at low temperatures for the occurrence of the metamagnetic transitions at higher fields with the application of electric field. △ Less

Submitted 28 October, 2015; originally announced October 2015.

Proposal for a Domain Wall Nano-Oscillator driven by Non-uniform Spin Currents

Authors: Sanchar Sharma, Bhaskaran Muralidharan, Ashwin Tulapurkar

Abstract: We propose a new mechanism and a related device concept for a robust, magnetic field tunable radio-frequency (rf) oscillator using the self oscillation of a magnetic domain wall subject to a uniform static magnetic field and a spatially non-uniform vertical dc spin current. The self oscillation of the domain wall is created as it translates periodically between two unstable positions, one being in… ▽ More We propose a new mechanism and a related device concept for a robust, magnetic field tunable radio-frequency (rf) oscillator using the self oscillation of a magnetic domain wall subject to a uniform static magnetic field and a spatially non-uniform vertical dc spin current. The self oscillation of the domain wall is created as it translates periodically between two unstable positions, one being in the region where both the dc spin current and the magnetic field are present, and the other, being where only the magnetic field is present. The vertical dc spin current pushes it away from one unstable position while the magnetic field pushes it away from the other. We show that such oscillations are stable under noise and can exhibit a quality factor of over 1000. A domain wall under dynamic translation, not only being a source for rich physics, is also a promising candidate for advancements in nanoelectronics with the actively researched racetrack memory architecture, digital and analog switching paradigms as candidate examples. Devising a stable rf oscillator using a domain wall is hence another step towards the realization of an all domain wall logic scheme. △ Less

Submitted 6 September, 2015; originally announced September 2015.

Comments: 12 pages, 4 figures, Supplementary Information,Accepted for publication in Scientific Reports

Journal ref: Scientific Reports,5, 14647, (2015)

Electric field controlled magnetization and transport properties of La0.7Ca0.3MnO3 ultrathin film

Authors: Himanshu Sharma, A. Tulapurkar, C. V. Tomy

Abstract: We have investigated the effect of electric field control on the magnetization and the transport properties in La0.7Ca0.3MnO3 (LCMO) ultrathin film (~10 nm) by using it as the semiconductor channel material of a prototypical field effect device and SiO2 as dielectric gate. A large electroresistance (ER) of ~78% at Vg = -8 V is found in LCMO at 200 K. The direct magnetization measurements confirm t… ▽ More We have investigated the effect of electric field control on the magnetization and the transport properties in La0.7Ca0.3MnO3 (LCMO) ultrathin film (~10 nm) by using it as the semiconductor channel material of a prototypical field effect device and SiO2 as dielectric gate. A large electroresistance (ER) of ~78% at Vg = -8 V is found in LCMO at 200 K. The direct magnetization measurements confirm the formation of a large ferromagnetic phase with the increase in the applied gate voltage at 200 K. △ Less

Submitted 21 July, 2015; originally announced July 2015.

Planar Hall and Nernst effect in patterned ultrathin film of La0.7Sr0.3MnO3

Authors: Himanshu Sharma, H. Bana, C. V. Tomy, A. Tulapurkar

Abstract: We present the observation of a transverse thermopower, or Planar Nernst Effect, in patterned ultrathin film (8 nm) of La0.7Sr0.3MnO3 (LSMO) driven by heat current applied in-plane of the film and Planar Hall Effect (PHE) in the same LSMO ultrathin film with in-plane current of 100 microA is also investigated. Even for temperature difference of 5 K the Planar Nernst Effect in ultrathin film (8 nm)… ▽ More We present the observation of a transverse thermopower, or Planar Nernst Effect, in patterned ultrathin film (8 nm) of La0.7Sr0.3MnO3 (LSMO) driven by heat current applied in-plane of the film and Planar Hall Effect (PHE) in the same LSMO ultrathin film with in-plane current of 100 microA is also investigated. Even for temperature difference of 5 K the Planar Nernst Effect in ultrathin film (8 nm) shows a coercivity of 3 Oe same as observed in Planar Hall Effect measurement and confirms the ferromagnetic nature of thin film. The angular dependence of transverse voltages shows four-fold sin{theta} cos{theta} dependence symmetry at 250 K, which is consistent with Planar Hall Effect measurement. △ Less

Submitted 5 June, 2016; v1 submitted 25 January, 2015; originally announced January 2015.

Enhancement of Spin-transfer torque switching via resonant tunneling

Authors: Niladri Chatterji, Ashwin A Tulapurkar, Bhaskaran Muralidharan

Abstract: We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently… ▽ More We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies. △ Less

Submitted 24 November, 2014; originally announced November 2014.

Comments: 5 pages, 5 figures

Journal ref: Appl. Phys. Lett.,(105), 232410, 2014

Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films

Authors: Himanshu Sharma, A. Tulapurkar, C. V. Tomy

Abstract: We present the observation of strain induced sign reversal of anisotropic magnetoresistance (AMR) in LCMO (LCMO) ultrathin films (thickness 4 nm) deposited on STO (001) substrate (STO). We have also observed unusually large AMR in LCMO/STO thin films with thickness of 6 nm below but close to its Curie temperature (TC) which decrease as the film thickness increases. The sign reversal of AMR (with a… ▽ More We present the observation of strain induced sign reversal of anisotropic magnetoresistance (AMR) in LCMO (LCMO) ultrathin films (thickness 4 nm) deposited on STO (001) substrate (STO). We have also observed unusually large AMR in LCMO/STO thin films with thickness of 6 nm below but close to its Curie temperature (TC) which decrease as the film thickness increases. The sign reversal of AMR (with a maximum value of - 6) with magnetic field or temperature for the 4 nm thin film may be attributed to the increase in tensile strain in the plane of the thin film which in turn facilitates the rotation of the magnetization easy axis. △ Less

Submitted 25 September, 2014; originally announced September 2014.

Magneto-Seebeck effect in spin-valve with in-plane thermal gradient

Authors: S. Jain, D. D. Lam, A. Bose, H. Sharma, V. R. Palkar, C. V. Tomy, Y. Suzuki, A. A. Tulapurkar

Abstract: We present measurements of magneto-Seebeck effect on a spin valve with in-plane thermal gradient. We measured open circuit voltage and short circuit current by applying a temperature gradient across a spin valve stack, where one of the ferromagnetic layers is pinned. We found a clear hysteresis in these two quantities as a function of magnetic field. From these measurements, the magneto-Seebeck ef… ▽ More We present measurements of magneto-Seebeck effect on a spin valve with in-plane thermal gradient. We measured open circuit voltage and short circuit current by applying a temperature gradient across a spin valve stack, where one of the ferromagnetic layers is pinned. We found a clear hysteresis in these two quantities as a function of magnetic field. From these measurements, the magneto-Seebeck effect was found to be 0.82%. △ Less

Submitted 16 September, 2014; originally announced September 2014.

Comments: 10 Pages, 7 figures

RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance

Authors: K. Konishi, D. K. Dixit, A. A. Tulapurkar, S. Miwa, T. Nozaki, H. Kubota, A. Fukushima, S. Yuasa, Y. Suzuki

Abstract: The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction (MTJ) and an electrically isolated coplanar waveguide. The input RF voltage applied to the waveguide can excite the resonant dynamics in the free layer magnetizati… ▽ More The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction (MTJ) and an electrically isolated coplanar waveguide. The input RF voltage applied to the waveguide can excite the resonant dynamics in the free layer magnetization, leading to the generation of an output RF voltage under a DC bias current. The dependences of the RF voltage gain on the static external magnetic field strength and angle were systematically investigated. The design principles for the enhancement of the gain factor are also discussed. △ Less

Submitted 10 July, 2013; originally announced July 2013.

Comments: 12 pages, 3 figures

Journal ref: Appl. Phys. Lett. 102, 162409 (2013)

Spintronic Oscillator Based on Magnetic Field Feedback

Authors: D. Dixit, K. Konishi, C. V. Tomy, Y. Suzuki, A. A. Tulapurkar

Abstract: We present a circuit design of a spintronic oscillator based on magnetic tunnel junction. In this design, a dc current is passed through a magnetic tunnel junction which is connected to a feed-back wire below it. Any fluctuation in the magnetization direction of the free layer of MTJ, drives a fluctuating current through the feed-back wire, which exerts a magnetic field on the free layer. This in… ▽ More We present a circuit design of a spintronic oscillator based on magnetic tunnel junction. In this design, a dc current is passed through a magnetic tunnel junction which is connected to a feed-back wire below it. Any fluctuation in the magnetization direction of the free layer of MTJ, drives a fluctuating current through the feed-back wire, which exerts a magnetic field on the free layer. This in turn can amplify the magnetization fluctuations of the free layer. If the dc current passing through the MTJ is more than a critical value, continuous precessing states of the magnetization are possible. △ Less

Submitted 10 July, 2013; originally announced July 2013.

Comments: 8 pages, 3 figures

Journal ref: Appl. Phys. Lett. 101, 122410 (2012)

Rectification of radio frequency current in ferromagnetic nanowire

Authors: A. Yamaguchi, H. Miyajima, T. Ono, Y. Suzuki, S. Yuasa, A. Tulapurkar, Y. Nakatani

Abstract: We report the rectification of a constant wave radio frequency (RF) current by using a single-layer magnetic nanowire; a direct-current voltage is resonantly generated when the RF current flows through the nanowire. The mechanism of the rectification is discussed in terms of the spin torque diode effect reported for magnetic tunnel junction devices and the rectification is shown to be direct att… ▽ More We report the rectification of a constant wave radio frequency (RF) current by using a single-layer magnetic nanowire; a direct-current voltage is resonantly generated when the RF current flows through the nanowire. The mechanism of the rectification is discussed in terms of the spin torque diode effect reported for magnetic tunnel junction devices and the rectification is shown to be direct attributable to resonant spin wave excitation by the RF current. △ Less

Submitted 7 May, 2007; v1 submitted 12 June, 2006; originally announced June 2006.

Comments: 20 Pages, 4 figures, submitted

Comparison of History Effects in Magnetization in Weakly pinned Crystals of high-$T_c$ and low-T$_c$ Superconductors

Authors: D. Pal, S. Sarkar, A. Tulapurkar, S. Ramakrishnan, A. K. Grover, G. Ravikumar, D. Dasgupta, Bimal K. Sarma, C. V. Tomy, G. Balakrishnan, D. Mck Paul

Abstract: A comparison of the history effects in weakly pinned single crystals of a high $T_c$ YBa$_2$Cu$_3$O$_{7 - δ}$ (for H $\parallel$ c) and a low $T_c$ Ca$_3$Rh$_4$Sn$_{13}$, which show anomalous variations in critical current density $J_c(H)$ are presented via tracings of the minor magnetization hysteresis loops using a vibrating sample magnetometer. The sample histories focussed are, (i) the field… ▽ More A comparison of the history effects in weakly pinned single crystals of a high $T_c$ YBa$_2$Cu$_3$O$_{7 - δ}$ (for H $\parallel$ c) and a low $T_c$ Ca$_3$Rh$_4$Sn$_{13}$, which show anomalous variations in critical current density $J_c(H)$ are presented via tracings of the minor magnetization hysteresis loops using a vibrating sample magnetometer. The sample histories focussed are, (i) the field cooled (FC), (ii) the zero field cooled (ZFC) and (iii) an isothermal reversal of field from the normal state. An understanding of the results in terms of the modulation in the plastic deformation of the elastic vortex solid and supercooling across order-disorder transition is sought. △ Less

Submitted 6 June, 2001; originally announced June 2001.

Comments: Presented in IWCC-2001

Establishment of a stable vortex state in the peak effect region in a weakly pinned superconductor CeRu_2

Authors: A. A. Tulapurkar, D. Heidarian, S. Sarkar, S. Ramakrishnan, A. K. Grover, E. Yamamoto, Y. Haga, M. Hedo, Y. Inada, Y. Onuki

Abstract: We present magnetization data on a weakly pinned CeRu_2 single crystal showing the existence of a stable state of the vortex lattice in the peak effect region. The stable state is achieved by cycling the magnetic field by small amplitude. This stable state is characterized by a unique value of critical current density (J_c), independent of the magnetic history of the sample. The results support… ▽ More We present magnetization data on a weakly pinned CeRu_2 single crystal showing the existence of a stable state of the vortex lattice in the peak effect region. The stable state is achieved by cycling the magnetic field by small amplitude. This stable state is characterized by a unique value of critical current density (J_c), independent of the magnetic history of the sample. The results support the recent model proposed by Ravikumar et al \cite{r39} on the history dependence of the J_c. △ Less

Submitted 5 September, 2000; originally announced September 2000.

Comments: 6 pages and 5 figures

Local magnetism of isolated Mo atoms at substitutional and interstitial sites in Yb metal : Experiment and Theory

Authors: A. A. Tulapurkar, S. N. Mishra, R. G. Pillay, H. G. Salunke, G. P. Das, S. Cottenier

Abstract: Using TDPAD experiment and local spin density calculations, we have observed large 4d moments on isolated Mo atoms at substitutional and octahedral interstitial lattice sites in Yb metal, showing Curie-Weiss local susceptibility and Korringa like spin relaxation rate. As a surprising feature, despite strong hybridization with the Yb neighbours, interstitial Mo atoms show high moment stability wi… ▽ More Using TDPAD experiment and local spin density calculations, we have observed large 4d moments on isolated Mo atoms at substitutional and octahedral interstitial lattice sites in Yb metal, showing Curie-Weiss local susceptibility and Korringa like spin relaxation rate. As a surprising feature, despite strong hybridization with the Yb neighbours, interstitial Mo atoms show high moment stability with small Kondo temperature. While, magnetism of Mo, at substitutional site is consistent with Kondo type antiferromagnetic d-sp exchange interaction, we suggest that moment stability at the interstitial site is strongly influenced by ferromagnetic polarization of Yb-4f5d band electrons. △ Less

Submitted 4 May, 2000; originally announced May 2000.

Comments: 4 pages, 4 figures