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Electrical control of a Kondo spin screening cloud
Authors:
Ngoc Han Tu,
Donghoon Kim,
Minsoo Kim,
Jeongmin Shim,
Ryo Ito,
David Pomaranski,
Ivan V. Borzenets,
Arne Ludwig,
Andreas D. Wieck,
Heung-Sun Sim,
Michihisa Yamamoto
Abstract:
In metals and semiconductors, an impurity spin is quantum entangled with and thereby screened by surrounding conduction electrons at low temperatures, called the Kondo screening cloud. Quantum confinement of the Kondo screening cloud in a region, called a Kondo box, with a length smaller than the original cloud extension length strongly deforms the screening cloud and provides a way of controlling…
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In metals and semiconductors, an impurity spin is quantum entangled with and thereby screened by surrounding conduction electrons at low temperatures, called the Kondo screening cloud. Quantum confinement of the Kondo screening cloud in a region, called a Kondo box, with a length smaller than the original cloud extension length strongly deforms the screening cloud and provides a way of controlling the entanglement. Here we realize such a Kondo box and develop an approach to controlling and monitoring the entanglement. It is based on a spin localized in a semiconductor quantum dot, which is screened by conduction electrons along a quasi-one-dimensional channel. The box is formed between the dot and a quantum point contact placed on a channel. As the quantum point contact is tuned to make the confinement stronger, electron conductance through the dot as a function of temperature starts to deviate from the known universal function of the single energy scale, the Kondo temperature. Nevertheless, the entanglement is monitored by the measured conductance according to our theoretical development. The dependence of the monitored entanglement on the confinement strength and temperature implies that the Kondo screening is controlled by tuning the quantum point contact. Namely, the Kondo cloud is deformed by the Kondo box in the region across the original cloud length. Our findings offer a way of manipulating and detecting spatially extended quantum many-body entanglement in solids by electrical means.
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Submitted 18 April, 2024;
originally announced April 2024.
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Ultra-Reliable and Low-Latency Short-Packet Communications for Multihop MIMO Relaying
Authors:
Ngo Hoang Tu,
Kyungchun Lee
Abstract:
This work considers the multihop multiple-input multiple-output relay network under short-packet communications to facilitate not only ultra-reliability but also low-latency communications. We assume that the transmit antenna selection (TAS) scheme is utilized at the transmit side, whereas either selection combining (SC) or maximum ratio combining (MRC) is leveraged at the receive side to achieve…
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This work considers the multihop multiple-input multiple-output relay network under short-packet communications to facilitate not only ultra-reliability but also low-latency communications. We assume that the transmit antenna selection (TAS) scheme is utilized at the transmit side, whereas either selection combining (SC) or maximum ratio combining (MRC) is leveraged at the receive side to achieve diversity gains. For quasi-static Rayleigh fading channels and the finite-blocklength regime, we derive the approximate closed-form expressions of the end-to-end (e2e) block error rate (BLER) for both the TAS/MRC and TAS/SC schemes. The asymptotic performance in the high signal-to-noise ratio regime is derived, from which the comparison of TAS/MRC and TAS/SC schemes in terms of the diversity order, e2e BLER loss, and SNR gap is provided. The e2e latency and throughputs are also analyzed for the considered schemes. The correctness of our analysis is confirmed via Monte Carlo simulations.
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Submitted 20 December, 2021;
originally announced December 2021.
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Survey on Aerial Radio Access Networks: Toward a Comprehensive 6G Access Infrastructure
Authors:
Nhu-Ngoc Dao,
Quoc-Viet Pham,
Ngo Hoang Tu,
Tran Thien Thanh,
Vo Nguyen Quoc Bao,
Demeke Shumeye Lakew,
Sungrae Cho
Abstract:
Current network access infrastructures are characterized by heterogeneity, low latency, high throughput, and high computational capability, enabling massive concurrent connections and various services. Unfortunately, this design does not pay significant attention to mobile services in underserved areas. In this context, the use of aerial radio access networks (ARANs) is a promising strategy to com…
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Current network access infrastructures are characterized by heterogeneity, low latency, high throughput, and high computational capability, enabling massive concurrent connections and various services. Unfortunately, this design does not pay significant attention to mobile services in underserved areas. In this context, the use of aerial radio access networks (ARANs) is a promising strategy to complement existing terrestrial communication systems. Involving airborne components such as unmanned aerial vehicles, drones, and satellites, ARANs can quickly establish a flexible access infrastructure on demand. ARANs are expected to support the development of seamless mobile communication systems toward a comprehensive sixth-generation (6G) global access infrastructure. This paper provides an overview of recent studies regarding ARANs in the literature. First, we investigate related work to identify areas for further exploration in terms of recent knowledge advancements and analyses. Second, we define the scope and methodology of this study. Then, we describe ARAN architecture and its fundamental features for the development of 6G networks. In particular, we analyze the system model from several perspectives, including transmission propagation, energy consumption, communication latency, and network mobility. Furthermore, we introduce technologies that enable the success of ARAN implementations in terms of energy replenishment, operational management, and data delivery. Subsequently, we discuss application scenarios envisioned for these technologies. Finally, we highlight ongoing research efforts and trends toward 6G ARANs.
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Submitted 27 February, 2021; v1 submitted 14 February, 2021;
originally announced February 2021.
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Active spatial control of terahertz graphene plasmons by tailoring carrier density profile
Authors:
Ngoc Han Tu,
Katsumasa Yoshioka,
Satoshi Sasaki,
Makoto Takamura,
Koji Muraki,
Norio Kumada
Abstract:
Graphene offers a possibility for actively controlling plasmon confinement and propagation by tailoring its spatial conductivity pattern. However, implementation of this concept has been hampered because uncontrollable plasmon reflection is easily induced by inhomogeneous dielectric environment. In this work, we demonstrate full electrical control of plasmon reflection/transmission at electronic b…
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Graphene offers a possibility for actively controlling plasmon confinement and propagation by tailoring its spatial conductivity pattern. However, implementation of this concept has been hampered because uncontrollable plasmon reflection is easily induced by inhomogeneous dielectric environment. In this work, we demonstrate full electrical control of plasmon reflection/transmission at electronic boundaries induced by a zinc-oxide-based dual gate, which is designed to minimize the dielectric modulation. Using Fourier-transform infrared spectroscopy, we show that the plasmon reflection can be varied continuously with the carrier density difference between the adjacent regions. By utilizing this functionality, we show the ability to control size, position, and frequency of plasmon cavities. Our approach can be applied to various types of plasmonic devices, paving the way for implementing a programmable plasmonic circuit.
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Submitted 19 November, 2019;
originally announced November 2019.
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Coupling between Quantum Hall Edge Channels on Opposite Sides of a Hall Bar
Authors:
Ngoc Han Tu,
Masayuki Hashisaka,
Takeshi Ota,
Yoshiaki Sekine,
Koji Muraki,
Toshimasa Fujisawa,
Norio Kumada
Abstract:
We investigate the coupling between quantum Hall (QH) edge channels (ECs) located at opposite sides of a 50-um-wide Hall bar by exciting a charged wavepacket in one EC and detecting time-dependent current in the other EC. In a QH state, the current shows a peak followed by a dip, demonstrating the existence of capacitive coupling across the incompressible two-dimensional electron system (2DES). Th…
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We investigate the coupling between quantum Hall (QH) edge channels (ECs) located at opposite sides of a 50-um-wide Hall bar by exciting a charged wavepacket in one EC and detecting time-dependent current in the other EC. In a QH state, the current shows a peak followed by a dip, demonstrating the existence of capacitive coupling across the incompressible two-dimensional electron system (2DES). The observed magnetic field dependence of the amplitude and time delay of the current suggests that the capacitance is affected by the presence of localized states. We also show that the dominant manner of the coupling changes gradually as the system changes between the QH and non-QH states.
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Submitted 4 December, 2018;
originally announced December 2018.
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Plasmon Confinement by Carrier Density Modulation in Graphene
Authors:
Ngoc Han Tu,
Makoto Takamura,
Yui Ogawa,
Satoru Suzuki,
Norio Kumada
Abstract:
We investigate plasmon resonances in graphene with periodic carrier density modulation. The period is 8 um, and each period consists of 1.7- and 6.3-um-wide ribbons with different density. Using terahertz spectroscopy, we show two plasmon modes with their electric field mostly localized in the 1.7- or 6.3-um-wide ribbon arrays. We also show that plasmons are excited only in one of the micro-ribbon…
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We investigate plasmon resonances in graphene with periodic carrier density modulation. The period is 8 um, and each period consists of 1.7- and 6.3-um-wide ribbons with different density. Using terahertz spectroscopy, we show two plasmon modes with their electric field mostly localized in the 1.7- or 6.3-um-wide ribbon arrays. We also show that plasmons are excited only in one of the micro-ribbon arrays when the Fermi energy of the other micro-ribbon array is set close to the charge neutrality point. These results indicate that plasmons can be confined by the carrier density modulation.
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Submitted 4 December, 2018;
originally announced December 2018.
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Charge Fractionalization in Artificial Tomonaga-Luttinger Liquids with Controlled Interaction Strength
Authors:
Paul Brasseur,
Ngoc Han Tu,
Yoshiaki Sekine,
Koji Muraki,
Masayuki Hashisaka,
Toshimasa Fujisawa,
Norio Kumada
Abstract:
We investigate charge fractionalizations in artificial Tomonaga-Luttinger liquids (TLLs) composed of two capacitively coupled quantum Hall edge channels (ECs) in graphene. The interaction strength of the artificial TLLs can be controlled through distance W between the ECs. We show that the fractionalization ratio r and the TLL mode velocity v vary with W. The experimentally obtained relation betwe…
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We investigate charge fractionalizations in artificial Tomonaga-Luttinger liquids (TLLs) composed of two capacitively coupled quantum Hall edge channels (ECs) in graphene. The interaction strength of the artificial TLLs can be controlled through distance W between the ECs. We show that the fractionalization ratio r and the TLL mode velocity v vary with W. The experimentally obtained relation between v and r follows a unique function predicted by the TLL theory. We also show that charged wavepackets are reflected back and forth multiple times at both ends of the TLL region.
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Submitted 27 July, 2017;
originally announced July 2017.
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Thermoelectric properties of 3D topological insulator: Direct observation of topological surface and its gap opened states
Authors:
Stephane Yu Matsushita,
Khuong Kim Huynh,
Harukazu Yoshino,
Ngoc Han Tu,
Yoichi Tanabe,
Katsumi Tanigaki
Abstract:
We report thermoelectric (TE) properties of topological surface Dirac states (TSDS) in three-dimensional topological insulators (3D-TIs) purely isolated from the bulk by employing single crystal Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ films epitaxially grown in the ultrathin limit. Two intrinsic nontrivial topological surface states, a metallic TSDS (m-TSDS) and a gap-opened semiconducting topological st…
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We report thermoelectric (TE) properties of topological surface Dirac states (TSDS) in three-dimensional topological insulators (3D-TIs) purely isolated from the bulk by employing single crystal Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ films epitaxially grown in the ultrathin limit. Two intrinsic nontrivial topological surface states, a metallic TSDS (m-TSDS) and a gap-opened semiconducting topological state (g-TSDS), are successfully observed by electrical transport, and important TE parameters (electrical conductivity ($σ$), thermal conductivity ($κ$), and thermopower ($S$)) are accurately determined. Pure m-TSDS gives $S$=-44 μVK$^{-1}$, which is an order of magnitude higher than those of the conventional metals and the value is enhanced to -212 μVK$^{-1}$ for g-TSDS. It is clearly shown that the semi-classical Boltzmann transport equation (SBTE) in the framework of constant relaxation time ($τ$) most frequently used for conventional analysis cannot be valid in 3D-TIs and strong energy dependent relaxation time $τ(E)$ beyond the Born approximation is essential for making intrinsic interpretations. Although $σ$ is protected on the m-TSDS, $κ$ is greatly influenced by the disorder on the topological surface, giving a dissimilar effect between topologically protected electronic conduction and phonon transport.
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Submitted 30 March, 2017;
originally announced March 2017.
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In-plane Topological p-n Junction in the Three-Dimensional Topological Insulator Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$
Authors:
Ngoc Han Tu,
Yoichi Tanabe,
Yosuke Satake,
Khuong Kim Huynh,
Katsumi Tanigaki
Abstract:
A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac su…
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A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of BSTS on its top half by employing tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By swee** the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.
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Submitted 17 December, 2016; v1 submitted 24 March, 2016;
originally announced March 2016.
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Large-Area and Transferred High-Quality Three-Dimensional Topological Insulator Bi2-xSbxTe3-ySey Ultrathin Film by Catalyst-Free Physical Vapor Deposition
Authors:
Ngoc Han Tu,
Yoichi Tanabe,
Yosuke Satake,
Khuong Kim Huynh,
Le Huu Phuoc,
Stephane Yu Matsushita,
Katsumi Tanigaki
Abstract:
Uniform and large area synthesis of bulk insulating ultrathin films is an important subject toward applications of a surface of three dimensional topological insulators (3D-TIs) in various electronic devices. Here we report epitaxial growth of bulk insulating three dimensional topological insulator (3D-TI) Bi2-xSbxTe3-ySey (BSTS) ultrathin films, ranging from a few quintuple to several hundreds of…
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Uniform and large area synthesis of bulk insulating ultrathin films is an important subject toward applications of a surface of three dimensional topological insulators (3D-TIs) in various electronic devices. Here we report epitaxial growth of bulk insulating three dimensional topological insulator (3D-TI) Bi2-xSbxTe3-ySey (BSTS) ultrathin films, ranging from a few quintuple to several hundreds of layaers, on mica in a large-area (1 cm2) via catalyst free physical vapor deposition. These films can nondestructively be exfoliated using deionized water and transferred to various kinds of substrates as desired. The transferred BSTS thin films show good ambipolar characteristics as well as well defined quantum oscillations arising from the topological surface states. Carrier mobility of 2500-5100 cm2(Vs)-1 is comparable to the high quality bulk BSTS single crystal. Moreover, tunable electronic states from the massless to the massive Dirac fermion were observed with a decrease in the film thickness. Both the feasible large area synthesis and the reliable film transfer process can promise that BSTS ultrathin films will pave a route to many applications of 3D-TIs.
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Submitted 13 April, 2017; v1 submitted 25 January, 2016;
originally announced January 2016.
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Van der Waals epitaxial growth of topological insulator Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica
Authors:
Ngoc Han Tu,
Yoichi Tanabe,
Khuong Kim Huynh,
Yohei Sato,
Hidetoshi Oguro,
Satoshi Heguri,
Kenji Tsuda,
Masami Terauchi,
Kazuo Watanabe,
Katsumi Tanigaki
Abstract:
We report the growth of high quality Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplates (BSTS-NPs) on an electrically insulating fluorophlogopite mica substrate using a catalyst-free vapor solid method. Under an optimized pressure and suitable Ar gas flow rate, we control the thickness, the size and the composition of BSTS-NPs. Raman spectra showing systematic change indicate that the thickness…
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We report the growth of high quality Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ ultrathin nanoplates (BSTS-NPs) on an electrically insulating fluorophlogopite mica substrate using a catalyst-free vapor solid method. Under an optimized pressure and suitable Ar gas flow rate, we control the thickness, the size and the composition of BSTS-NPs. Raman spectra showing systematic change indicate that the thicknesses and compositions of BSTS-NPs are indeed accurately controlled. Electrical transport demonstrates that a robust Dirac cone carrier transport in BSTS-NPs. Since BSTS-NPs provide superior dominant surface transport of the tunable Dirac cone surface states with negligible contribution of the conduction of the bulk states, BSTS-NPs provide an ideal platform to explore intrinsic physical phenomena as well as technological applications of 3-dimensional topological insulators in the future.
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Submitted 29 July, 2014;
originally announced July 2014.
