Showing 1–22 of 22 results for author: Tsukamoto, S

Single-crystal graphene on Ir(110)

Authors: Stefan Kraus, Felix Huttmann, Jeison Fischer, Timo Knispel, Ken Bischof, Alexander Herman, Marco Bianchi, Raluca-Maria Stan, Ann Julie Holt, Vasile Caciuc, Shigeru Tsukamoto, Heiko Wende, Philip Hofmann, Nicolae Atodiresei, Thomas Michely

Abstract: A single-crystal sheet of graphene is synthesized on the low-symmetry substrate Ir(110) by thermal decomposition of C$_2$H$_4$ at 1500 K. Using scanning tunneling microscopy, low-energy electron diffraction, angle-resolved photoemission spectroscopy, and ab initio density functional theory the structure and electronic properties of the adsorbed graphene sheet and its moiré with the substrate are u… ▽ More A single-crystal sheet of graphene is synthesized on the low-symmetry substrate Ir(110) by thermal decomposition of C$_2$H$_4$ at 1500 K. Using scanning tunneling microscopy, low-energy electron diffraction, angle-resolved photoemission spectroscopy, and ab initio density functional theory the structure and electronic properties of the adsorbed graphene sheet and its moiré with the substrate are uncovered. The adsorbed graphene layer forms a wave pattern of nm wave length with a corresponding modulation of its electronic properties. This wave pattern is demonstrated to enable the templated adsorption of aromatic molecules and the uniaxial growth of organometallic wires. Not limited to this, graphene on Ir(110) is also a versatile substrate for 2D-layer growth and makes it possible to grow epitaxial layers on ureconstructed Ir(110). △ Less

Submitted 9 September, 2021; originally announced September 2021.

Comments: 34 pages, 14 figures

Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

Authors: A. Tuktamyshev, A. Fedorov, S. Bietti, S. Vichi, K. D. Zeuner, K. D. Jöns, D. Chrastina, S. Tsukamoto, V. Zwiller, M. Gurioli, S. Sanguinetti

Abstract: We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth rate thanks to the presence of preferential nucleation sites at the step edges. A 100 nm InAlAs metamorphic layer with In content > 50% is already almost fully rel… ▽ More We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth rate thanks to the presence of preferential nucleation sites at the step edges. A 100 nm InAlAs metamorphic layer with In content > 50% is already almost fully relaxed with a very flat surface. The quantum dots emit at the 1.3 μm telecom O-band with the fine structure splitting as low as 16 μeV, thus making them suitable as photon sources in quantum communication networks using entangled photons. △ Less

Submitted 1 April, 2021; v1 submitted 28 January, 2021; originally announced January 2021.

Comments: 13 pages, 4 figures

Journal ref: Applied Physics Letters 118, 133102 (2021)

Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A

Authors: Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti, Shiro Tsukamoto, Roberto Bergamaschini, Francesco Montalenti, Stefano Sanguinetti

Abstract: We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 °C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizeab… ▽ More We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 °C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizeable reduction of the island density. An additional, reentrant increasing behavior is observed below 80 °C. We attribute the above complex behavior to the liquid-solid phase transition and to the complex island-island interaction which takes place between crystalline islands in the presence of strain. Indium solid islands grown at temperatures below 160 °C have a face-centered cubic crystal structure. △ Less

Submitted 24 July, 2020; v1 submitted 7 July, 2020; originally announced July 2020.

Comments: 12 pages, 5 figures

Efficient calculation of the Green's function in scattering region for electron-transport simulations

Authors: Yoshiyuki Egami, Shigeru Tsukamoto, Tomoya Ono

Abstract: We propose a first-principles method of efficiently evaluating electron-transport properties of very long systems. Implementing the recursive Green's function method and the shifted conjugate gradient method in the transport simulator based on real-space finite-difference formalism, we can suppress the increase in the computational cost, which is generally proportional to the cube of the system le… ▽ More We propose a first-principles method of efficiently evaluating electron-transport properties of very long systems. Implementing the recursive Green's function method and the shifted conjugate gradient method in the transport simulator based on real-space finite-difference formalism, we can suppress the increase in the computational cost, which is generally proportional to the cube of the system length to a linear order. This enables us to perform the transport calculations of double-walled carbon nanotubes~(DWCNTs) with 196,608 atoms. We find that the conductance spectra exhibit different properties depending on the periodicity of doped impurities in DWCNTs and they differ from the properties for systems with less than 1,000 atoms. △ Less

Submitted 4 May, 2020; originally announced May 2020.

Comments: 13 pages, 5 figures, 1 table

Journal ref: Phys. Rev. Research 3, 013038 (2021)

Metal Droplet Effects on the Composition of Ternary Nitrides

Authors: Mani Azadmand, Stefano Vichi, Sergio Bietti, Daniel Chrastina, Emiliano Bonera, Maurizio Acciarri, Alexey Fedorov, Shiro Tsukamoto, Richard Nötzel, Stefano Sanguinetti

Abstract: We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong reduction of the In incorporation when the surface is covered by metal droplets. The such reduction increases with the droplet density and the droplet surface coverage. We explain this phenomenonology via a model that consi… ▽ More We investigate effects of metal droplets on the In incorporation in InGaN epilayers grown at low temperature (450 C) by plasma assisted molecular beam epitaxy. We find a strong reduction of the In incorporation when the surface is covered by metal droplets. The such reduction increases with the droplet density and the droplet surface coverage. We explain this phenomenonology via a model that considers droplet effects on the incorporation of In and Ga adatoms into the crystal by taking into account the combined effects of the higher mobility of In, with respect to Ga, and to the vapor-liquid-solid growth that takes place under the droplet by direct im**ement of nitrogen. The proposed model is general and can be extended to describe the incorporation of adatoms during the growth of the material class of ternary compounds when droplets are present on the surface. △ Less

Submitted 16 July, 2019; originally announced July 2019.

Analytical PAW Projector Functions for Reduced Bandwidth Requirements

Authors: Paul F. Baumeister, Shigeru Tsukamoto

Abstract: Large scale electronic structure calculations require modern high performance computing (HPC) resources and, as important, mature HPC applications that can make efficient use of those. Real-space grid-based applications of Density Functional Theory (DFT) using the Projector Augmented Wave method (PAW) can give the same accuracy as DFT codes relying on a plane wave basis set but exhibit an improved… ▽ More Large scale electronic structure calculations require modern high performance computing (HPC) resources and, as important, mature HPC applications that can make efficient use of those. Real-space grid-based applications of Density Functional Theory (DFT) using the Projector Augmented Wave method (PAW) can give the same accuracy as DFT codes relying on a plane wave basis set but exhibit an improved scalability on distributed memory machines. The projection operations of the PAW Hamiltonian are known to be the performance critical part due to their limitation by the available memory bandwidth. We investigate on the utility of a 3D factorizable basis of Hermite functions for the localized PAW projector functions which allows to reduce the bandwidth requirements for the grid representation of the projector functions in projection operations. Additional on-the-fly sampling of the 1D basis functions eliminates the memory transfer almost entirely. For an quantitative assessment of the expected memory bandwidth savings we show performance results of a first implementation on GPUs. Finally, we suggest a PAW generation scheme adjusted to the analytically given projector functions. △ Less

Submitted 1 May, 2019; originally announced May 2019.

Comments: 11 pages, 10 figures, conference contribution at PASC19

Improvement of accuracy of wave-function-matching method for transport calculation

Authors: Shigeru Tsukamoto, Tomoya Ono, Stefan Blügel

Abstract: The wave-function-matching (WFM) technique for first-principles transport-property calculations was modified by Sørensen {\it et al.} so as to exclude rapidly decreasing evanescent waves [Sørensen {\it et al.}, Phys. Rev. B {\bf 77}, 155301 (2008)]. However, this method lacks translational invariance of the transmission probability with respect to insertion of matching planes and consistency betwe… ▽ More The wave-function-matching (WFM) technique for first-principles transport-property calculations was modified by Sørensen {\it et al.} so as to exclude rapidly decreasing evanescent waves [Sørensen {\it et al.}, Phys. Rev. B {\bf 77}, 155301 (2008)]. However, this method lacks translational invariance of the transmission probability with respect to insertion of matching planes and consistency between the sum of the transmission and reflection probabilities and the number of channels in the transition region. We reformulate the WFM method since the original methods are formulated to include all the generalized Bloch waves. It is found that the translational invariance is destroyed by the overlap of the layers between the electrode and transition regions and by the pseudoinverses used to exclude the rapidly decreasing evanescent waves. We then devise a method that removes the overlap and calculates the transmission probability without the pseudoinverses. As a result, we find that the translational invariance of the transmission probability with respect to insertion of the extra layers is properly retained and the sum of the transmission and reflection probabilities exactly agrees with the number of channels. In addition, we prove that the accuracy in the transmission probability of this WFM technique is comparable with that obtained by the nonequilibrium Green's function method. Furthermore, we carry out the electron transport calculations on two-dimensional graphene sheets embedded with B--N line defects sandwiched between a pair of semi-infinite graphene electrodes and find the dependence of the electron transmission on the transverse momentum perpendicular to the direction of transport. △ Less

Submitted 14 December, 2017; originally announced December 2017.

Journal ref: Phys. Rev. B 97, 115450 (2018)

Droplet Controlled Growth Dynamics in Plasma-Assisted Molecular Beam Epitaxy of In(Ga)N Materials

Authors: Mani Azadmand, Luca Barabani, Sergio Bietti, Daniel Chrastina, Emiliano Bonera, Maurizio Acciarri, Alexey Fedorov, Shiro Tsukamoto, Richard Nötzel, Stefano Sanguinetti

Abstract: We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450°C). We find that the presence of droplets on the growth surface strongly affects the adatom incorporation dynamics, making the growth rate a decreasing function of the overall metal flux im**ing on the surface as soon as the m… ▽ More We investigate the effect of the formation of metal droplets on the growth dynamics of InGaN by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) at low temperatures (T = 450°C). We find that the presence of droplets on the growth surface strongly affects the adatom incorporation dynamics, making the growth rate a decreasing function of the overall metal flux im**ing on the surface as soon as the metal dose exceeds the critical amount required for the nucleation of droplets. We explain this phenomenon via a model that takes into account droplet effects on the incorporation of metal adatoms into the crystal. A relevant role is played by the vapor-liquid-solid growth mode that takes place under the droplets due to nitrogen molecules directly im**ing on the droplets. △ Less

Submitted 1 December, 2017; v1 submitted 29 November, 2017; originally announced November 2017.

Comments: 14 pages, 4 figures

Contour integral method for obtaining the self-energy matrices of electrodes in electron transport calculations

Authors: Shigeru Iwase, Yasunori Futamura, Akira Imakura, Tetsuya Sakurai, Shigeru Tsukamoto, Tomoya Ono

Abstract: We propose an efficient computational method for evaluating the self-energy matrices of electrodes to study ballistic electron transport properties in nanoscale systems. To reduce the high computational cost incurred in large systems, a contour integral eigensolver based on the Sakurai-Sugiura method combined with the shifted biconjugate gradient method is developed to solve exponential-type eigen… ▽ More We propose an efficient computational method for evaluating the self-energy matrices of electrodes to study ballistic electron transport properties in nanoscale systems. To reduce the high computational cost incurred in large systems, a contour integral eigensolver based on the Sakurai-Sugiura method combined with the shifted biconjugate gradient method is developed to solve exponential-type eigenvalue problem for complex wave vectors. A remarkable feature of the proposed algorithm is that the numerical procedure is very similar to that of conventional band structure calculations. We implement the developed method in the framework of the real-space higher-order finite difference scheme with nonlocal pseudopotentials. Numerical tests for a wide variety of materials validate the robustness, accuracy, and efficiency of the proposed method. As an illustration of the method, we present the electron transport property of the free-standing silicene with the line defect originating from the reversed buckled phases. △ Less

Submitted 7 May, 2018; v1 submitted 26 September, 2017; originally announced September 2017.

Comments: 36 pages, 13 figures, 2 tables

Journal ref: Phys. Rev. B 97, 195449 (2018)

First-principles calculation method and its applications for two-dimensional materials

Authors: Yoshiyuki Egami, Shigeru Tsukamoto, Tomoya Ono

Abstract: We present details of our effective computational methods based on the real-space finite-difference formalism to elucidate electronic and magnetic properties of the two-dimensional (2D) materials within the framework of the density functional theory. The real-space finite-difference formalism enables us to treat truly 2D computational models by imposing individual boundary condition on each direct… ▽ More We present details of our effective computational methods based on the real-space finite-difference formalism to elucidate electronic and magnetic properties of the two-dimensional (2D) materials within the framework of the density functional theory. The real-space finite-difference formalism enables us to treat truly 2D computational models by imposing individual boundary condition on each direction. The formulae for practical computations under the boundary conditions specific to the 2D materials are derived and the electronic band structures of 2D materials are demonstrated using the proposed method. Additionally, we introduce other first-principles works on the MoS2 monolayer focusing on the modulation of electronic and magnetic properties originating from lattice defects. △ Less

Submitted 4 October, 2016; originally announced October 2016.

Comments: 39 pages, 8 figures, 1 table

Real-space method for first-principles electron-transport calculations: self-energy terms of electrodes for large systems

Authors: Tomoya Ono, Shigeru Tsukamoto

Abstract: We present a fast and stable numerical technique to obtain the self-energy terms of electrodes for first-principles electron-transport calculations. Although first-principles calculations based on the real-space finite-difference method are advantageous for execution on massively parallel computers, large-scale transport calculations are hampered by the computational cost and numerical instability… ▽ More We present a fast and stable numerical technique to obtain the self-energy terms of electrodes for first-principles electron-transport calculations. Although first-principles calculations based on the real-space finite-difference method are advantageous for execution on massively parallel computers, large-scale transport calculations are hampered by the computational cost and numerical instability of the computation of the self-energy terms. Using the orthogonal complement vectors of the space spanned by the generalized Bloch waves that actually contribute to transport phenomena, the computational accuracy of transport properties is significantly improved with a moderate computational cost. To demonstrate the efficiency of the present technique, the electron-transport properties of a Stone-Wales (SW) defect in graphene and silicene are examined. The resonance scattering of the SW defect is observed in the conductance spectrum of silicene since the $σ^\ast$ state of silicene lies near the Fermi energy. In addition, we found that one conduction channel is sensitive to a defect near the Fermi energy, while the other channel is hardly affected. This characteristic behavior of the conduction channels is interpreted in terms of the bonding network between the bilattices of the honeycomb structure in the formation of the SW defect. The present technique enables us to distinguish the different behaviors of the two conduction channels in graphene and silicene owing to its excellent accuracy. △ Less

Submitted 5 November, 2015; originally announced November 2015.

Comments: 28 pages

Report number: CCS9001

Journal ref: Phys. Rev. B 93, 045421 (2016)

Phase Diagram of Collective Motion of Bacterial Cells in a Shallow Circular Pool

Authors: Jun-ichi Wakita, Shota Tsukamoto, Ken Yamamoto, Makoto Katori, Yasuyuki Yamada

Abstract: The collective motion of bacterial cells in a shallow circular pool is systematically studied using the bacterial species $Bacillus$ $subtilis$. The ratio of cell length to pool diameter (i.e., the reduced cell length) ranges from 0.06 to 0.43 in our experiments. Bacterial cells in a circular pool show various types of collective motion depending on the cell density in the pool and the reduced cel… ▽ More The collective motion of bacterial cells in a shallow circular pool is systematically studied using the bacterial species $Bacillus$ $subtilis$. The ratio of cell length to pool diameter (i.e., the reduced cell length) ranges from 0.06 to 0.43 in our experiments. Bacterial cells in a circular pool show various types of collective motion depending on the cell density in the pool and the reduced cell length. The motion is classified into six types, which we call random motion, turbulent motion, one-way rotational motion, two-way rotational motion, random oscillatory motion, and ordered oscillatory motion. Two critical values of reduced cell lengths are evaluated, at which drastic changes in collective motion are induced. A phase diagram is proposed in which the six phases are arranged. △ Less

Submitted 2 October, 2015; originally announced October 2015.

Comments: 18 pages, 6 figures, revised version for publication in J. Phys. Soc. Jpn

First-principles calculation method for electron transport based on grid Lippmann-Schwinger equation

Authors: Yoshiyuki Egami, Shigeru Iwase, Shigeru Tsukamoto, Tomoya Ono, Kikuji Hirose

Abstract: We develop a first-principles electron-transport simulator based on the Lippmann--Schwinger (LS) equation within the framework of the real-space finite-difference scheme. In our fully real-space based LS (grid LS) method, the ratio expression technique for the scattering wave functions and the Green's function elements of the reference system is employed to avoid numerical collapse. Furthermore, w… ▽ More We develop a first-principles electron-transport simulator based on the Lippmann--Schwinger (LS) equation within the framework of the real-space finite-difference scheme. In our fully real-space based LS (grid LS) method, the ratio expression technique for the scattering wave functions and the Green's function elements of the reference system is employed to avoid numerical collapse. Furthermore, we present analytical expressions and/or prominent calculation procedures for the retarded Green's function, which are utilized in the grid LS approach. In order to demonstrate the performance of the grid LS method, we simulate the electron-transport properties of the semiconductor/oxide interfaces sandwiched between semi-infinite metal electrodes. The results confirm that the leakage current through the (001)Si/SiO$_2$ model becomes much larger when the dangling-bond (DB) state is induced by a defect in the oxygen layer while that through the (001)Ge/GeO$_2$ model is insensitive to the DB state. △ Less

Submitted 24 May, 2015; originally announced May 2015.

First-principles study on atomic configuration of electron-beam irradiated C$_{60}$ clusters

Authors: Tomoya Ono, Shigeru Tsukamoto

Abstract: A theoretical study proposes the atomic configuration of electron-beam irradiated C$_{60}$ thin films. We examined the electronic structure and electron-transport properties of the C$_{60}$ clusters using density-functional calculations and found that a rhombohedral C$_{60}$ polymer with $sp^3$-bonded dumbbell-shaped connections at the molecule junction is a semiconductor with a narrow band gap wh… ▽ More A theoretical study proposes the atomic configuration of electron-beam irradiated C$_{60}$ thin films. We examined the electronic structure and electron-transport properties of the C$_{60}$ clusters using density-functional calculations and found that a rhombohedral C$_{60}$ polymer with $sp^3$-bonded dumbbell-shaped connections at the molecule junction is a semiconductor with a narrow band gap while the polymer changes to exhibit metallic behavior by forming $sp^2$-bonded peanut-shaped connections. Conductance below the Fermi level increases and the peak of the conductance spectrum arising from the $t_{u1}$ states of a C$_{60}$ molecule becomes obscure after the connections are rearranged. The present rohmbohedral film, including the [2+2] four-membered rings and peanut-shaped connections, is a candidate to represent the structure of the metallic C$_{60}$ polymer at the initial stage of electron-beam irradiation. △ Less

Submitted 16 May, 2011; originally announced May 2011.

Report number: PRESAT-8501

Real-space electronic-structure calculations with full-potential all-electron precision for transition-metals

Authors: Tomoya Ono, Marcus Heide, Nicolae Atodiresei, Paul Baumeister, Shigeru Tsukamoto, Stefan Blügel

Abstract: We have developed an efficient computational scheme utilizing the real-space finite-difference formalism and the projector augmented-wave (PAW) method to perform precise first-principles electronic-structure simulations based on the density functional theory for systems containing transition metals with a modest computational effort. By combining the advantages of the time-saving double-grid techn… ▽ More We have developed an efficient computational scheme utilizing the real-space finite-difference formalism and the projector augmented-wave (PAW) method to perform precise first-principles electronic-structure simulations based on the density functional theory for systems containing transition metals with a modest computational effort. By combining the advantages of the time-saving double-grid technique and the Fourier filtering procedure for the projectors of pseudopotentials, we can overcome the egg box effect in the computations even for first-row elements and transition metals, which is a problem of the real-space finite-difference formalism. In order to demonstrate the potential power in terms of precision and applicability of the present scheme, we have carried out simulations to examine several bulk properties and structural energy differences between different bulk phases of transition metals, and have obtained excellent agreement with the results of other precise first-principles methods such as a plane wave based PAW method and an all-electron full-potential linearized augmented plane wave (FLAPW) method. △ Less

Submitted 3 September, 2010; originally announced September 2010.

Comments: 29 Pages

Report number: PRESAT-8401

Spatial Point Analysis of Quantum Dot Nucleation Sites on InAs Wetting Layer

Authors: Tomoya Konishi, Shiro Tsukamoto

Abstract: We perform spatial point analysis of InAs quantum dot nucleation sites and surface reconstruction domain pattern on an InAs wetting layer, giving insights for quantum dot nucleation mechanism. An InAs wetting layer grown to 1.5 monolayers in thickness on a GaAs(001) substrate has been observed at 300 degC by using in situ scanning tunneling microscopy. The surface exhibits (1x3)/(2x3) and (2x4) re… ▽ More We perform spatial point analysis of InAs quantum dot nucleation sites and surface reconstruction domain pattern on an InAs wetting layer, giving insights for quantum dot nucleation mechanism. An InAs wetting layer grown to 1.5 monolayers in thickness on a GaAs(001) substrate has been observed at 300 degC by using in situ scanning tunneling microscopy. The surface exhibits (1x3)/(2x3) and (2x4) reconstruction domains. A nearest-neighbor analysis finds that point pattern of quantum dot precursors was more similar to that of (1x3)/(2x3) domains which are specific to Ga-rich region. This provides the evidence that InAs quantum dot nucleation is induced by Ga-rich fluctuation within an InAs wetting layer. △ Less

Submitted 24 July, 2010; originally announced July 2010.

Comments: 4 pages, 6 figures; as submitted to journal

Magnetic orderings in Al nanowires suspended between electrodes

Authors: Tomoya Ono, Shigeru Tsukamoto, Kikuji Hirose

Abstract: A theoretical analysis of a relation between atomic and spin-electronic structures for the ground state of single-row aluminum nanowires suspended between Al(001) electrodes is demonstrated using first-principles molecular-dynamics simulations. We obtain a unusual result that a 3-aluminum-atom nanowire sandwiched between the electrodes does not manifest magnetic ordering although an isolated alu… ▽ More A theoretical analysis of a relation between atomic and spin-electronic structures for the ground state of single-row aluminum nanowires suspended between Al(001) electrodes is demonstrated using first-principles molecular-dynamics simulations. We obtain a unusual result that a 3-aluminum-atom nanowire sandwiched between the electrodes does not manifest magnetic ordering although an isolated aluminum trimer molecule in a straight line is spin-polarized. On the other hand, a 5-atom nanowire exhibits ferromagnetic ordering, where three central atoms form a spin-polarized trimer. Moreover, in the case of an 8-atom nanowire, the middle atoms in the nanowire form two spin-polarized trimers with antiferromagnetic ordering. △ Less

Submitted 2 April, 2003; originally announced April 2003.

Comments: 9 pages

Report number: PRESAT-7801

Journal ref: Appl. Phys. Lett. 82, 4570 (2003)

Sudden Suppression of Electron-Transmission Peaks in Finite-Biased Nanowires

Authors: Shigeru Tsukamoto, Masakazu Aono, Kikuji Hirose

Abstract: Negative differential conductance (NDC) is expected to be an essential property to realize fast switching in future electronic devices. We here present a thorough analysis on electron transportability of a simple atomic-scale model consisting of square prisms, and clarify the detailed mechanism of the occurrence of NDC phenomenon in terms of the changes of local density of states upon applying b… ▽ More Negative differential conductance (NDC) is expected to be an essential property to realize fast switching in future electronic devices. We here present a thorough analysis on electron transportability of a simple atomic-scale model consisting of square prisms, and clarify the detailed mechanism of the occurrence of NDC phenomenon in terms of the changes of local density of states upon applying bias voltages to the electrodes. Boosting up bias voltages, we observe sudden suppression of transmission peaks which results in NDC behavior in the current-voltage characteristic. This suppression is explained by the fact that when the bias voltage exceeds a certain threshold, the conduction channels contributing to the current flow are suddenly closed up to deny the electron transportation. △ Less

Submitted 26 July, 2002; originally announced July 2002.

Comments: 12 text pages, 6 figures

Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures

Authors: Akihiro Ohtake, Shiro Tsukamoto, Markus Pristovsek, Nobuyuki Koguchi, Masashi Ozeki

Abstract: Structure of the Ga-stabilized GaAs(001)-c(8x2) surface has been studied using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The c(8x2) structure emerges at temperatures higher than 600C, but is unstable with respect to the change to the (2x6)/(3x6) structure at lower temperatures. Our RHEED rocking-curve analysis at high temperatures revealed that the c(8x2) sur… ▽ More Structure of the Ga-stabilized GaAs(001)-c(8x2) surface has been studied using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The c(8x2) structure emerges at temperatures higher than 600C, but is unstable with respect to the change to the (2x6)/(3x6) structure at lower temperatures. Our RHEED rocking-curve analysis at high temperatures revealed that the c(8x2) surface has the structure which is basically the same as that recently proposed by Kumpf et al. [Phys. Rev. Lett. 86, 3586 (2001)]. We found that the surface atomic configurations are locally fluctuated at high temperatures without disturbing the c(8x2) periodicity. △ Less

Submitted 5 February, 2002; originally announced February 2002.

Comments: 14 pages, 4 figures, 1 table

As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy

Authors: Shiro Tsukamoto, Markus Pristovsek, Bradford G. Orr, Akihiro Ohtake, Gavin R. Bell, Nobuyuki Koguchi

Abstract: As-rich GaAs (001) surfaces are successfully observed during As4-irradition by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy can be performed simultaneously. With a substrate temperature of 440 C and an As4 partial pressure of 2x10-6 torr, reflection high energy electron diffraction patterns and reflectance anisotropy spectra confirm a c(4x4) As-stabilized surf… ▽ More As-rich GaAs (001) surfaces are successfully observed during As4-irradition by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy can be performed simultaneously. With a substrate temperature of 440 C and an As4 partial pressure of 2x10-6 torr, reflection high energy electron diffraction patterns and reflectance anisotropy spectra confirm a c(4x4) As-stabilized surface. STM images clearly show alteration of the surface reconstructions while scanning. It is postulated that continual attachment / detachment of As molecules to and from the surface produces the observed dynamic behavior. △ Less

Submitted 4 February, 2002; originally announced February 2002.

Comments: 11 pages, 5 figures

Ga-rich GaAs(001) surfaces observed during high-temperature annealing by scanning tunneling microscopy

Authors: Shiro Tsukamoto, Markus Pristovsek, Bradford G. Orr, Akihiro Ohtake, Gavin R. Bell, Nobuyuki Koguchi

Abstract: Ga-rich GaAs (001) surfaces are successfully observed during high-temperature annealing by scanning tunneling microscopy (STM). With a substrate temperature of 550 C, reflection high-energy diffraction patterns and reflectance anisotropy spectra confirm a (4x2) Ga-stabilized surface. STM images clearly show alteration of the surface reconstructions while scanning. It is postulated that detaching… ▽ More Ga-rich GaAs (001) surfaces are successfully observed during high-temperature annealing by scanning tunneling microscopy (STM). With a substrate temperature of 550 C, reflection high-energy diffraction patterns and reflectance anisotropy spectra confirm a (4x2) Ga-stabilized surface. STM images clearly show alteration of the surface reconstructions while scanning. It is postulated that detaching and attaching of Ga adatoms may be the cause of these surface dynamics. For these conditions it is determined that zeta(4x4), zeta2(4x4) and zeta(4x6) reconstructions co-exist on the surface. The zeta2(4x4) reconstruction contains a Ga tetramer cluster and in more Ga-rich conditions, the zeta2(4x6) surface has a Ga octamer cluster. △ Less

Submitted 29 January, 2002; v1 submitted 29 January, 2002; originally announced January 2002.

Comments: 11 pages, 3 figures

Electron-Transport Properties of Na Nanowires under Applied Bias Voltages

Authors: Shigeru Tsukamoto, Kikuji Hirose

Abstract: We present first-principles calculations on electron transport through Na nanowires at finite bias voltages. The nanowire exhibits a nonlinear current-voltage characteristic and negative differential conductance. The latter is explained by the drastic suppression of the transmission peaks which is attributed to the electron transportability of the negatively biased plinth attached to the end of… ▽ More We present first-principles calculations on electron transport through Na nanowires at finite bias voltages. The nanowire exhibits a nonlinear current-voltage characteristic and negative differential conductance. The latter is explained by the drastic suppression of the transmission peaks which is attributed to the electron transportability of the negatively biased plinth attached to the end of the nanowire. In addition, the finding that a voltage drop preferentially occurs on the negatively biased side of the nanowire is discussed in relation to the electronic structure and conduction. △ Less

Submitted 29 January, 2002; originally announced January 2002.

Comments: 4 pages, 6 figures