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Spin-orbit coupling and crystal-field distortions for a low-spin $3d^5$ state in BaCoO$_{3}$
Authors:
Y. Y. Chin,
Z. Hu,
H. -J. Lin,
S. Agrestini,
J. Weinen,
C. Martin,
S. Hébert,
A. Maignan,
A. Tanaka,
J. C. Cezar,
N. B. Brookes,
Y. -F. Liao,
K. -D. Tsuei,
C. T. Chen,
D. I. Khomskii,
L. H. Tjeng
Abstract:
We have studied the electronic structure of BaCoO$_3$ using soft x-ray absorption spectroscopy at the Co-$L_{2,3}$ and O-$K$ edges, magnetic circular dichroism at the Co-$L_{2,3}$ edges, as well as valence band hard x-ray photoelectron spectroscopy. The quantitative analysis of the spectra established that the Co ions are in the formal low-spin tetravalent 3$d^5$ state and that the system is a neg…
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We have studied the electronic structure of BaCoO$_3$ using soft x-ray absorption spectroscopy at the Co-$L_{2,3}$ and O-$K$ edges, magnetic circular dichroism at the Co-$L_{2,3}$ edges, as well as valence band hard x-ray photoelectron spectroscopy. The quantitative analysis of the spectra established that the Co ions are in the formal low-spin tetravalent 3$d^5$ state and that the system is a negative charge transfer Mott insulator. The spin-orbit coupling plays also an important role for the magnetism of the system. At the same time, a trigonal crystal field is present with sufficient strength to bring the 3$d^5$ ion away from the $J_{eff} = 1/2$ state. The sign of this crystal field is such that the $a_{1g}$ orbital is doubly occupied, explaining the absence of a Peierl's transition in this system which consists of chains of face-sharing CoO$_6$ octahedra. Moreover, with one hole residing in the $e_g^π$, the presence of an orbital moment and strong magneto-crystalline anisotropy can be understood. Yet, we also infer that crystal fields with lower symmetry must be present to reproduce the measured orbital moment quantitatively, thereby suggesting the possibility for orbital ordering to occur in BaCoO$_3$.
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Submitted 23 May, 2019;
originally announced May 2019.
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Intermediate valence in single crystalline Yb$_2$Si$_2$Al
Authors:
W. J. Gannon,
K. Chen,
M. Sundermann,
F. Strigari,
Y. Utsumi,
K. -D. Tsuei,
J. -P. Rueff,
P. Bencok,
A. Tanaka,
A. Severing,
M. C. Aronson
Abstract:
Yb$_2$Si$_2$Al may be a prototype for exploring different aspects of the Shastry-Sutherland lattice, formed by planes of orthogonally coupled Yb ions. Measurements of the magnetic susceptibility find incoherently fluctuating Yb$^{3+}$ moments coexisting with a weakly correlated metallic state that is confirmed by measurements of the electrical resistivity. Increasing signs of Kondo coherence are f…
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Yb$_2$Si$_2$Al may be a prototype for exploring different aspects of the Shastry-Sutherland lattice, formed by planes of orthogonally coupled Yb ions. Measurements of the magnetic susceptibility find incoherently fluctuating Yb$^{3+}$ moments coexisting with a weakly correlated metallic state that is confirmed by measurements of the electrical resistivity. Increasing signs of Kondo coherence are found with decreasing temperature, including an enhanced Sommerfeld coefficient and Kadowaki-Woods ratio that signal that the metallic state found at the lowest temperatures is a Fermi liquid where correlations have become significantly stronger. A pronounced peak in the electronic and magnetic specific heat indicates that the coupling of the Yb moments to the conduction electrons leads to an effective Kondo temperature that is approximately 30 K. The valence of Yb$_2$Si$_2$Al has been investigated with electron spectroscopy methods. Yb$_2$Si$_2$Al is found to be strongly intermediate valent ($v_F=2.68(2)$ at 80 K). Taken together, these experimental data are consistent with a scenario where a coherent Kondo lattice forms in Yb$_2$Si$_2$Al from an incoherently fluctuating ensemble of Yb moments with incomplete Kondo compensation, and strong intermediate valence character.
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Submitted 2 March, 2018; v1 submitted 22 February, 2018;
originally announced February 2018.
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The $c$-axis dimer and its electronic break-up: the insulator-to-metal transition in Ti$_2$O$_3$
Authors:
C. F. Chang,
T. C. Koethe,
Z. Hu,
J. Weinen,
S. Agrestini,
J. Gegner,
H. Ott,
G. Panaccione,
Hua Wu,
M. W. Haverkort,
H. Roth,
A. C. Komarek,
F. Offi,
G. Monaco,
Y. -F. Liao,
K. -D. Tsuei,
H. -J. Lin,
C. T. Chen,
A. Tanaka,
L. H. Tjeng
Abstract:
We report on our investigation of the electronic structure of Ti$_2$O$_3$ using (hard) x-ray photoelectron and soft x-ray absorption spectroscopy. From the distinct satellite structures in the spectra we have been able to establish unambiguously that the Ti-Ti $c$-axis dimer in the corundum crystal structure is electronically present and forms an $a_{1g}a_{1g}$ molecular singlet in the low tempera…
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We report on our investigation of the electronic structure of Ti$_2$O$_3$ using (hard) x-ray photoelectron and soft x-ray absorption spectroscopy. From the distinct satellite structures in the spectra we have been able to establish unambiguously that the Ti-Ti $c$-axis dimer in the corundum crystal structure is electronically present and forms an $a_{1g}a_{1g}$ molecular singlet in the low temperature insulating phase. Upon heating we observed a considerable spectral weight transfer to lower energies with orbital reconstruction. The insulator-metal transition may be viewed as a transition from a solid of isolated Ti-Ti molecules into a solid of electronically partially broken dimers where the Ti ions acquire additional hop** in the $a$-$b$ plane via the $e_g^π$ channel, the opening of which requires the consideration of the multiplet structure of the on-site Coulomb interaction.
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Submitted 24 October, 2017;
originally announced October 2017.
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Electronic signature of the vacancy ordering in NbO (Nb3O3)
Authors:
A. K. Efimenko,
N. Hollmann,
K. Hoefer,
J. Weinen,
D. Takegami,
K. K. Wolff,
S. G. Altendorf,
Z. Hu,
A. D. Rata,
A. C. Komarek,
A. A. Nugroho,
Y. F. Liao,
K. -D. Tsuei,
H. H. Hsieh,
H. -J. Lin,
C. T. Chen,
L. H. Tjeng,
D. Kasinathan
Abstract:
We investigated the electronic structure of the vacancy-ordered 4d-transition metal monoxide NbO (Nb3O3) using angle-integrated soft- and hard-x-ray photoelectron spectroscopy as well as ultra-violet angle-resolved photoelectron spectroscopy. We found that density-functional-based band structure calculations can describe the spectral features accurately provided that self-interaction effects are t…
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We investigated the electronic structure of the vacancy-ordered 4d-transition metal monoxide NbO (Nb3O3) using angle-integrated soft- and hard-x-ray photoelectron spectroscopy as well as ultra-violet angle-resolved photoelectron spectroscopy. We found that density-functional-based band structure calculations can describe the spectral features accurately provided that self-interaction effects are taken into account. In the angle-resolved spectra we were able to identify the so-called vacancy band that characterizes the ordering of the vacancies. This together with the band structure results indicates the important role of the very large inter-Nb-4d hybridization for the formation of the ordered vacancies and the high thermal stability of the ordered structure of niobium monoxide.
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Submitted 20 September, 2017;
originally announced September 2017.
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Ce 3$p$ hard x-ray photoelectron spectroscopy study of the topological Kondo insulator CeRu$_4$Sn$_6$
Authors:
M. Sundermann,
K. Chen,
Y. Utsumi,
Y. -H. Wu,
K. -D. Tsuei,
J. Haenel,
A. Prokofiev,
S. Paschen,
A. Tanaka,
L. H. Tjeng,
A. Severing
Abstract:
Bulk sensitive hard x-ray photoelectron spectroscopy data of the Ce 3$p$ core level of CeRu$_4$Sn$_6$ are presented. Using a combination of full multiplet and configuration iteration model we were able to obtain an accurate lineshape analysis of the data, thereby taking into account correlations for the strong plasmon intensities. We conclude that CeRu$_4$Sn$_6$ is a moderately mixed valence compo…
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Bulk sensitive hard x-ray photoelectron spectroscopy data of the Ce 3$p$ core level of CeRu$_4$Sn$_6$ are presented. Using a combination of full multiplet and configuration iteration model we were able to obtain an accurate lineshape analysis of the data, thereby taking into account correlations for the strong plasmon intensities. We conclude that CeRu$_4$Sn$_6$ is a moderately mixed valence compound with a weight of 8% for the Ce $f^0$ configuration in the ground state.
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Submitted 22 February, 2017;
originally announced February 2017.
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Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3
Authors:
Y. Hung Liu,
C. Wei Chong,
W. Chuan Chen,
J. C. A. Huang,
C. -Maw Cheng,
K. -Ding Tsuei,
Z. Li,
H. Qiu,
V. V. Marchenkov
Abstract:
(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states in this ternary system. Large tunability in transport properties by varying the Sb do** level has also been observed, where insulating phase could be achieved…
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(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states in this ternary system. Large tunability in transport properties by varying the Sb do** level has also been observed, where insulating phase could be achieved at x=0.5. Our results reveal the potential of this system for the study of tunable topological insulator and metal-insulator transition based device physics.
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Submitted 25 November, 2016;
originally announced November 2016.
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Quantitative study of the f occupation in CeMIn5 and other cerium compounds with hard x-rays
Authors:
M. Sundermann,
F. Strigari,
T. Willers,
J. Weinen,
Y. F. Liao,
K. -D. Tsuei,
N. Hiraoka,
H. Ishii,
H. Yamaoka,
J. Mizuki,
Y. Zekko,
E. D. Bauer,
J. L. Sarrao,
J. D. Thompson,
P. Lejay,
Y. Muro,
K. Yutani,
T. Takabatake,
A. Tanaka,
N. Hollmann,
L. H. Tjeng,
A. Severing
Abstract:
We present bulk-sensitive hard x-ray photoelectron spectroscopy (HAXPES) data of the Ce3d core levels and lifetime-reduced L edge x-ray absorption spectroscopy (XAS) in the partial fluorescence yield (PFY) mode of the CeMIn5 family with M = Co, Rh, and Ir. The HAXPES data are analyzed quantitatively with a combination of full multiplet and configuration interaction model which allows correcting fo…
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We present bulk-sensitive hard x-ray photoelectron spectroscopy (HAXPES) data of the Ce3d core levels and lifetime-reduced L edge x-ray absorption spectroscopy (XAS) in the partial fluorescence yield (PFY) mode of the CeMIn5 family with M = Co, Rh, and Ir. The HAXPES data are analyzed quantitatively with a combination of full multiplet and configuration interaction model which allows correcting for the strong plasmons in the CeMIn5 HAXPES data, and reliable weights wn of the different fn contributions in the ground state are determined. The CeMIn5 results are compared to HAXPES data of other heavy fermion compounds and a systematic decrease of the hybridization strength Veff from CePd3 to CeRh3B2 to CeRu2Si2 is observed, while it is smallest for the three CeMIn5 compounds. The f-occupation, however, increases in the same sequence and is close to one for the CeMIn5 family. The PFY-XAS data confirm an identical f-occupation in the three CeMIn5 compounds and a phenomenological fit to these PFY-XAS data combined with a configuration interaction model yields consistent results.
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Submitted 13 January, 2016;
originally announced January 2016.
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Quantitative study of valence and configuration interaction parameters of the Kondo semiconductors CeM2Al10 (M = Ru, Os and Fe) by means of bulk-sensitive hard x-ray photoelectron spectroscopy
Authors:
F. Strigari,
M. Sundermann,
Y. Muro,
K. Yutani,
T. Takabatake,
K. -D. Tsuei,
Y. F. Liao,
A. Tanaka,
P. Thalmeier,
M. W. Haverkort,
L. H. Tjeng,
A. Severing
Abstract:
The occupancy of the 4f^n contributions in the Kondo semiconductors CeM2Al10(M = Ru, Os and Fe) has been quantitatively determined by means of bulk-sensitive hard x-ray photoelectron spectroscopy (HAXPES) on the Ce 3d core levels. Combining a configuration interaction scheme with full multiplet calculations allowed to accurately describe the HAXPES data despite the presence of strong plasmon excit…
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The occupancy of the 4f^n contributions in the Kondo semiconductors CeM2Al10(M = Ru, Os and Fe) has been quantitatively determined by means of bulk-sensitive hard x-ray photoelectron spectroscopy (HAXPES) on the Ce 3d core levels. Combining a configuration interaction scheme with full multiplet calculations allowed to accurately describe the HAXPES data despite the presence of strong plasmon excitations in the spectra. The configuration interaction parameters obtained from this analysis -- in particular the hybridization strength V_eff and the effective f binding energy Delta_f -- indicate a slightly stronger exchange interaction in CeOs2Al10 compared to CeRu2Al10, and a significant increase in CeFe2Al10. This verifies the coexistence of a substantial amount of Kondo screening with magnetic order and places the entire CeM2Al10 family in the region of strong exchange interactions.
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Submitted 8 January, 2015; v1 submitted 23 September, 2014;
originally announced September 2014.
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Contiguous 3d and 4f magnetism: towards strongly correlated 3d electrons in YbFe2Al10
Authors:
P. Khuntia,
P. Peratheepan,
A. Strydom,
Y. Utsumi,
K. -T. Ko,
K. -D. Tsuei,
L. H. Tjeng,
F. Steglich,
M. Baenitz
Abstract:
We present magnetization, specific heat, and 27Al NMR investigations on YbFe2Al10 over a wide range in temperature and magnetic field. The magnetic susceptibility at low temperatures is strongly enhanced at weak magnetic fields, accompanied by a ln(T0/T) divergence of the low-T specific heat coefficient in zero field, which indicates a ground state of correlated electrons. From our hard X-ray phot…
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We present magnetization, specific heat, and 27Al NMR investigations on YbFe2Al10 over a wide range in temperature and magnetic field. The magnetic susceptibility at low temperatures is strongly enhanced at weak magnetic fields, accompanied by a ln(T0/T) divergence of the low-T specific heat coefficient in zero field, which indicates a ground state of correlated electrons. From our hard X-ray photo emission spectroscopy (HAXPES) study, the Yb valence at 50 K is evaluated to be 2.38. The system displays valence fluctuating behavior in the low to intermediate temperature range, whereas above 400 K, Yb3+ carries a full and stable moment, and Fe carries a moment of about 3.1 mB. The enhanced value of the Sommerfeld Wilson ratio and the dynamic scaling of spin-lattice relaxation rate divided by T [27(1/T1T)] with static susceptibility suggests admixed ferromagnetic correlations. 27(1/T1T) simultaneously tracks the valence fluctuations from the 4f -Yb ions in the high temperature range and field dependent antiferromagnetic correlations among partially Kondo screened Fe 3d moments at low temperature, the latter evolve out of an Yb 4f admixed conduction band.
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Submitted 15 October, 2014; v1 submitted 19 February, 2014;
originally announced February 2014.
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THz Generation and Detection on Dirac Fermions in Topological Insulators
Authors:
C. W. Luo,
C. C. Lee,
H. -J. Chen,
C. M. Tu,
S. A. Ku,
W. Y. Tzeng,
T. T. Yeh,
M. C. Chiang,
H. J. Wang,
W. C. Chu,
J. -Y. Lin,
K. H. Wu,
J. Y. Juang,
T. Kobayashi,
C. -M. Cheng,
C. -H. Chen,
K. -D. Tsuei,
H. Berger,
R. Sankar,
F. C. Chou,
H. D. Yang
Abstract:
This study shows that a terahertz (THz) wave can be generated from the (001) surface of cleaved Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ and Cu-doped Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ single crystals using 800 nm femtosecond pulses. The generated THz power is strongly dependent on the carrier concentration of the crystals. An examination of the dependence reveals the two-channel free carrier absorption…
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This study shows that a terahertz (THz) wave can be generated from the (001) surface of cleaved Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ and Cu-doped Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ single crystals using 800 nm femtosecond pulses. The generated THz power is strongly dependent on the carrier concentration of the crystals. An examination of the dependence reveals the two-channel free carrier absorption to which Dirac fermions are indispensable. Dirac fermions in Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ are significantly better absorbers of THz radiation than bulk carriers at room temperature. Moreover, the characteristics of THz emission confirm the existence of a recently proposed surface phonon branch that is normalized by Dirac fermions.
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Submitted 25 January, 2013;
originally announced February 2013.
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Local correlations, non-local screening, multiplets, and band formation in NiO
Authors:
T. Haupricht,
J. Weinen,
A. Tanaka,
R. Gierth,
S. G. Altendorf,
Y. -Y. Chin,
T. Willers,
J. Gegner,
H. Fujiwara,
F. Strigari,
A. Hendricks,
D. Regesch,
Z. Hu,
Hua Wu,
K. -D. Tsuei,
Y. F. Liao,
H. H. Hsieh,
H. -J. Lin,
C. T. Chen,
L. H. Tjeng
Abstract:
We report on a comparative study of the valence band electronic structure of NiO as bulk material and of NiO as impurity in MgO. From the impurity we have been able to determine reliably the parameters which describe the local correlations, thereby establishing the compensated-spin character of the first ionization state or the state created by hole do**. Using bulk-sensitive x-ray photoemission…
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We report on a comparative study of the valence band electronic structure of NiO as bulk material and of NiO as impurity in MgO. From the impurity we have been able to determine reliably the parameters which describe the local correlations, thereby establishing the compensated-spin character of the first ionization state or the state created by hole do**. Using bulk-sensitive x-ray photoemission we identify pronounced satellite features in the valence band of bulk NiO which cannot be explained by single-site many body approaches nor by mean field calculations. We infer the presence of screening processes involving local quasi-core states in the valence band and non-local coherent many body states. These processes are strong and the propagation of an extra hole in the valence band of NiO will therefore be accompanied by a range of high energy excitations. This in turn will make the observation of the dispersion relations in the Ni 3d bands difficult, also because the effective band width is no more than 0.25 eV as estimated from multi-site calculations.
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Submitted 24 October, 2012;
originally announced October 2012.
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Determining the in-plane orientation of the ground-state orbital of CeCu2Si2
Authors:
T. Willers,
F. Strigari,
N. Hiraoka,
Y. Q. Cai,
M. W. Haverkort,
K. -D. Tsuei,
Y. F. Liao,
S. Seiro,
C. Geibel,
F. Steglich,
L. H. Tjeng,
A. Severing
Abstract:
We have successfully determined the hitherto unknown sign of the B44 Stevens crystal-field parameter of the tetragonal heavy-fermion compound CeCu2Si2 using vector q dependent non-resonant inelastic x-ray scattering (NIXS) experiments at the cerium N4,5 edge. The observed difference between the two different directions q||[100] and q||[110] is due to the anisotropy of the crystal-field ground stat…
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We have successfully determined the hitherto unknown sign of the B44 Stevens crystal-field parameter of the tetragonal heavy-fermion compound CeCu2Si2 using vector q dependent non-resonant inelastic x-ray scattering (NIXS) experiments at the cerium N4,5 edge. The observed difference between the two different directions q||[100] and q||[110] is due to the anisotropy of the crystal-field ground state in the (001) plane and is observable only because of the utilization of higher than dipole transitions possible in NIXS. This approach allows us to go beyond the specific limitations of dc magnetic susceptibility, inelastic neutron scattering, and soft x-ray spectroscopy, and provides us with a reliable information about the orbital state of the 4f electrons relevant for the quantitative modeling of the quasi-particles and their interactions in heavy-fermion systems.
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Submitted 9 May, 2012;
originally announced May 2012.
