Showing 1–16 of 16 results for author: Tsoi, M

Angular dependence of the electrically driven and detected ferromagnetic resonance in Ni$_{36}$Fe$_{64}$ wires

Authors: Qiang Gao, Maxim Tsoi

Abstract: We study the angular dependence of ferromagnetic resonance (FMR) in Ni$_{36}$Fe$_{64}$ wires using both traditional microwave-absorption and electrical-detection techniques. In our experiments we apply a static magnetic field at an angle $θ$ with respect to the wire, while the microwave current, which is responsible for driving FMR, is always flowing along the wire. For different $θ$s we find a ve… ▽ More We study the angular dependence of ferromagnetic resonance (FMR) in Ni$_{36}$Fe$_{64}$ wires using both traditional microwave-absorption and electrical-detection techniques. In our experiments we apply a static magnetic field at an angle $θ$ with respect to the wire, while the microwave current, which is responsible for driving FMR, is always flowing along the wire. For different $θ$s we find a very similar behavior for both microwave-absorption and electrically-detected FMR -- the resonance magnetic field follows a simple "$1/\cos(θ)$" dependence. This simple behavior highlights the importance of the relative orientation between the driving current and magnetic field. We also investigated the dependence of the electrically detected FMR on dc and rf (microwave) current magnitudes. As expected, the resonance signal increases linearly with both the applied dc current and the microwave power. △ Less

Submitted 30 March, 2023; originally announced March 2023.

Magnetotransport properties of granular oxide-segregated CoPtCr films for applications in future magnetic memory technology

Authors: Morgan Williamson, Maxim Tsoi, Pin-Wei Huang, Gan** Ju, Cheng Wang

Abstract: Magnetotransport properties of granular oxide-segregated CoPtCr films were studied on both macroscopic and microscopic length scales by performing bulk and point-contact magnetoresistance measurements, respectively. Such a perpendicular magnetic medium is used in state-of-the-art hard disc drives and if combined with magnetoresistive phenomena (for read/write operations) may lead to a novel concep… ▽ More Magnetotransport properties of granular oxide-segregated CoPtCr films were studied on both macroscopic and microscopic length scales by performing bulk and point-contact magnetoresistance measurements, respectively. Such a perpendicular magnetic medium is used in state-of-the-art hard disc drives and if combined with magnetoresistive phenomena (for read/write operations) may lead to a novel concept for magnetic recording with high areal density. While the bulk measurements on the films showed only small variations in dc resistance as a function of applied magnetic field (magnetoresistance of less than 0.02 %), the point-contact measurements revealed giant-magnetoresistance-like changes in resistance with up to 50,000 % ratios. The observed magnetorestive effect could be attributed to a tunnel magnetoresistance between CoPtCr grains with different coercivity. The tunneling picture of electronic transport in our granular medium was confirmed by the observation of tunneling-like current-voltage characteristics and bias dependence of magnetoresistance; both the point-contact resistance and magnetoresistance were found to decrease with the applied dc bias. △ Less

Submitted 22 July, 2019; originally announced July 2019.

Exploring the energy landscape of resistive switching in antiferromagnetic Sr(3)Ir(2)O(7)

Authors: Morgan Williamson, Shida Shen, Gang Cao, Jianshi Zhou, John B. Goodenough, Maxim Tsoi

Abstract: We study the resistive switching triggered by an applied electrical bias in antiferromagnetic Mott insulator Sr(3)Ir(2)O(7). The switching was previously associated with an electric-field driven structural transition. Here we use time-resolved measurements of the switching to probe the energy barrier associated with the transition. We quantify the changes in the energy barrier height with respect… ▽ More We study the resistive switching triggered by an applied electrical bias in antiferromagnetic Mott insulator Sr(3)Ir(2)O(7). The switching was previously associated with an electric-field driven structural transition. Here we use time-resolved measurements of the switching to probe the energy barrier associated with the transition. We quantify the changes in the energy barrier height with respect to the applied bias and find a linear decrease of the barrier with increasing bias. Our observations support the potential of antiferromagnetic transition metal oxides for spintronic applications. △ Less

Submitted 6 February, 2018; originally announced February 2018.

Comments: 9 pages, 4 figures

Journal ref: Phys. Rev. B 97, 134431 (2018)

Antiferromagnetic spintronics

Authors: V. Baltz, A. Manchon, M. Tsoi, T. Moriyama, T. Ono, Y. Tserkovnyak

Abstract: Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics and are capable of generating large magneto-transport effects. Intense research efforts over the past decade have been invested in unraveling spin… ▽ More Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics and are capable of generating large magneto-transport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer, and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. △ Less

Submitted 3 May, 2017; v1 submitted 14 June, 2016; originally announced June 2016.

Journal ref: Rev. Mod. Phys. 90, 015005 (2018)

Metallicity of Ca2Cu6P5 with Single and Double Copper-Pnictide Layers

Authors: Li Li, David Parker, Miaofang Chi, Georgiy M. Tsoi, Yogesh K. Vohra, Athena S. Sefat

Abstract: We report thermodynamic and transport properties, and also theoretical calculations, for Cu-based compound Ca2Cu6P5 and compare with CaCu(2-x)P2. Both materials have layers of edge-sharing copper pnictide tetrahedral CuP4, similar to Fe-As and Fe-Se layers (with FeAs4, FeSe4) in the iron-based superconductors. Despite the presence of this similar transition-metal pnictide layer, we find that both… ▽ More We report thermodynamic and transport properties, and also theoretical calculations, for Cu-based compound Ca2Cu6P5 and compare with CaCu(2-x)P2. Both materials have layers of edge-sharing copper pnictide tetrahedral CuP4, similar to Fe-As and Fe-Se layers (with FeAs4, FeSe4) in the iron-based superconductors. Despite the presence of this similar transition-metal pnictide layer, we find that both Ca2Cu6P5 and CaCu(2-x)P2 have temperature-independent magnetic susceptibility and show metallic behavior with no evidence of either magnetic ordering or superconductivity down to 1.8 K. CaCu(2-x)P2 is slightly off-stoichiometric, with delta = 0.14. Theoretical calculations suggest that unlike Fe 3d-based magnetic materials with a large density of states (DOS) at the Fermi surface, Cu have comparatively low DOS, with the majority of the 3d spectral weight located well below Fermi level. The room-temperature resistivity value of Ca2Cu6P5 is only 9 micro ohm-cm, due to a substantial plasma frequency and an inferred electron-phonon coupling lambda of 0.073 (significantly smaller than that of metallic Cu). Also, microscopy result shows that Cu-Cu distance along the c-axis within the double layers can be very short (2.5 A), even shorter than metallic elemental copper bond (2.56 A). The value of dp over dT for CaCu(2-x)P2 at 300 K is approximately three times larger than in Ca2Cu6P5, which suggests the likelihood of stronger electron-phonon coupling. This study shows that the details of Cu-P layers and bonding are important for their transport characteristics. In addition, it emphasizes the remarkable character of the DOS of '122' iron-based materials, despite much structural similarities. △ Less

Submitted 8 September, 2015; originally announced September 2015.

Comments: 13 pages, 5 figures

Journal ref: Phys. Rev. B 94, 134510 (2016)

Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4

Authors: Cheng Wang, Heidi Seinige, Gang Cao, Jian-Shi Zhou, John B. Goodenough, Maxim Tsoi

Abstract: The electronic band gap in conventional semiconductor materials, such as silicon, is fixed by the material's crystal structure and chemical composition. The gap defines the material's transport and optical properties and is of great importance for performance of semiconductor devices like diodes, transistors and lasers. The ability to tune its value would allow enhanced functionality and flexibili… ▽ More The electronic band gap in conventional semiconductor materials, such as silicon, is fixed by the material's crystal structure and chemical composition. The gap defines the material's transport and optical properties and is of great importance for performance of semiconductor devices like diodes, transistors and lasers. The ability to tune its value would allow enhanced functionality and flexibility of future electronic and optical devices. Recently, an electrically tunable band gap was realized in a 2D material - electronically gated bilayer graphene [1-3]. Here we demonstrate the realization of an electrically tunable band gap in a 3D antiferromagnetic Mott insulator Sr2IrO4. Using nano-scale contacts between a sharpened Cu tip and a single crystal of Sr2IrO4, we apply a variable external electric field up to a few MV/m and demonstrate a continuous reduction in the band gap of Sr2IrO4 by as much as 16%. We further demonstrate the feasibility of reversible resistive switching and electrically tunable anisotropic magnetoresistance,which provide evidence of correlations between electronic transport, magnetic order, and orbital states in this 5d oxide. Our findings suggest a promising path towards band gap engineering in 5d transition-metal oxides that could potentially lead to appealing technical solutions for next-generation electronic devices. △ Less

Submitted 27 February, 2015; originally announced February 2015.

Comments: 14 pages, 6 figures

Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4

Authors: Cheng Wang, Heidi Seinige, Gang Cao, Jian-Shi Zhou, John B. Goodenough, Maxim Tsoi

Abstract: We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature revealed negative magnetoresistances (MRs) (up to 28%) for modest magnetic fields (250 mT) applied… ▽ More We report point-contact measurements of anisotropic magnetoresistance (AMR) in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature revealed negative magnetoresistances (MRs) (up to 28%) for modest magnetic fields (250 mT) applied within the IrO2 a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of MR shows a crossover from four-fold to two-fold symmetry in response to an increasing magnetic field with angular variations in resistance from 1-14%. We tentatively attribute the four-fold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of AFM-coupled moments in Sr2IrO4. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys/oxides (0.1-0.5%) and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also better harness the power of spintronics in a more technically favorable fashion. △ Less

Submitted 11 September, 2014; v1 submitted 11 September, 2014; originally announced September 2014.

Comments: 13 pages, 3 figures

High Pressure Effects on the Superconductivity in Rare-Earth Doped CaFe2As2

Authors: Dan Cargill, Walter Uhoya, Gofryk Krzysztof, Georgiy M. Tsoi, Yogesh K. Vohra, Athena S. Sefat, S. T. Weir

Abstract: High-pressure superconductivity in a rare-earth doped Ca0.86Pr0.14Fe2As2 single crystalline sample has been studied up to 12 GPa and temperatures down to 11 K using designer diamond anvil cell under a quasi-hydrostatic pressure medium. The electrical resistance measurements were complemented by high pressure and low temperature x-ray diffraction studies at a synchrotron source. The electrical resi… ▽ More High-pressure superconductivity in a rare-earth doped Ca0.86Pr0.14Fe2As2 single crystalline sample has been studied up to 12 GPa and temperatures down to 11 K using designer diamond anvil cell under a quasi-hydrostatic pressure medium. The electrical resistance measurements were complemented by high pressure and low temperature x-ray diffraction studies at a synchrotron source. The electrical resistance measurements show an intriguing observation of superconductivity under pressure, with Tc as high as ~51 K at 1.9 GPa, presenting the highest Tc reported in the intermetallic class of 1-2-2 iron-based superconductors. The resistive transition observed suggests a possible existence of two superconducting phases at low pressures of 0.5 GPa: one phase starting at Tc1 ~48 K, and the other starting at Tc2~16 K. The two superconducting transitions show distinct variations with increasing pressure. High pressure low temperature structural studies indicate that the superconducting phase is a collapsed tetragonal ThCr2Si2-type (122) crystal structure. Our high pressure studies indicate that high Tc state attributed to non-bulk superconductivity in rare-earth doped 1-2-2 iron-based superconductors is stable under compression over a broad pressure range. △ Less

Submitted 20 October, 2013; v1 submitted 14 October, 2013; originally announced October 2013.

Comments: 18 pages, 5 figures, 1 table

Journal ref: High Pressure Research: An International Journal Volume 34, Issue 1, 2014

Pressure Induced Superconductivity and Structural Transitions in Ba(Fe0.9Ru0.1)2As2

Authors: Walter Uhoya, Georgiy M. Tsoi, Yogesh K. Vohra, Athena S. Sefat, Samuel T. Weir

Abstract: High pressure electrical resistance and x-ray diffraction measurements have been performed on ruthenium-doped Ba(Fe0.9Ru0.1)2As2, up to pressures of 32 GPa and down to temperatures of 10 K, using designer diamond anvils under quasi-hydrostatic conditions. At 3.9 GPa, there is an evidence of pressure-induced superconductivity with Tc onset of 24 K and zero resistance at Tc zero of ~14.5 K. The supe… ▽ More High pressure electrical resistance and x-ray diffraction measurements have been performed on ruthenium-doped Ba(Fe0.9Ru0.1)2As2, up to pressures of 32 GPa and down to temperatures of 10 K, using designer diamond anvils under quasi-hydrostatic conditions. At 3.9 GPa, there is an evidence of pressure-induced superconductivity with Tc onset of 24 K and zero resistance at Tc zero of ~14.5 K. The superconducting transition temperature reaches maximum at ~5.5 GPa and then decreases gradually with increase in pressure before completely disappearing above 11.5 GPa. Upon increasing pressure at 200 K, an isostructural phase transition from a tetragonal (I4/mmm) phase to a collapsed tetragonal phase is observed at 14 GPa and the collapsed phase persists up to at least 30 GPa. The changes in the unit cell dimensions are highly anisotropic across the phase transition and are qualitatively similar to those observed in undoped BaFe2As2 parent. △ Less

Submitted 17 March, 2014; v1 submitted 1 April, 2013; originally announced April 2013.

Comments: 15 pages, 4 figures

Journal ref: The European Physical Journal B (2014) 87: 68

Brillouin Light Scattering Spectra as local Temperature Sensors for Thermal Magnons and Acoustic Phonons

Authors: Daniel R. Birt, Kyongmo An, Annie Weathers, Li Shi, Maxim Tsoi, Xiaoqin Li

Abstract: We demonstrate the use of the micro-Brillouin light scattering (micro-BLS) technique as a local temperature sensor for magnons in a Permalloy thin film and phonons in the glass substrate. A systematic shift in the frequencies of two thermally excited perpendicular standing spin wave modes as the film is uniformly heated allows us to achieve a temperature resolution better than 2.5 K. We demonstrat… ▽ More We demonstrate the use of the micro-Brillouin light scattering (micro-BLS) technique as a local temperature sensor for magnons in a Permalloy thin film and phonons in the glass substrate. A systematic shift in the frequencies of two thermally excited perpendicular standing spin wave modes as the film is uniformly heated allows us to achieve a temperature resolution better than 2.5 K. We demonstrate that the micro-BLS spectra can be used to measure the local temperatures of phonons and magnons across a thermal gradient. Such local temperature sensors are useful for investigating spin caloritronic and thermal transport phenomena in general. △ Less

Submitted 5 February, 2013; v1 submitted 6 December, 2012; originally announced December 2012.

Comments: 15 pages, 5 figures

Pressure Induced Superconductivity in Ba0.5Sr0.5Fe2As2

Authors: Georgiy M. Tsoi, Walter Malone, Walter Uhoya, Jonathan E. Mitchel, Yogesh K. Vohra, Lowell E. Wenger, Athena S. Sefat, S. T . Weir

Abstract: High-pressure electrical resistance measurements have been performed on single crystal Ba0.5Sr0.5Fe2As2 platelets to pressures of 16 GPa and temperatures down to 10 K using designer diamond anvils under quasi-hydrostatic conditions with an insulating steatite pressure medium. The resistance measurements show evidence of pressure-induced superconductivity with an onset transition temperature at ~31… ▽ More High-pressure electrical resistance measurements have been performed on single crystal Ba0.5Sr0.5Fe2As2 platelets to pressures of 16 GPa and temperatures down to 10 K using designer diamond anvils under quasi-hydrostatic conditions with an insulating steatite pressure medium. The resistance measurements show evidence of pressure-induced superconductivity with an onset transition temperature at ~31 K and zero resistance at ~22 K for a pressure of 3.3 GPa. The transition temperature decreases gradually with increasing in pressure before completely disappearing for pressures above 12 GPa. The present results provide experimental evidence that a solid solution of two 122-type materials, e.g., Ba1-x.SrxFe2As2 (0 < x <1), can also exhibit superconductivity under high pressure △ Less

Submitted 12 October, 2012; originally announced October 2012.

Journal ref: J. Phys.: Condens. Matter 24 495702 (2012)

Structural and Magnetic Phase Transitions in NdCoAsO under High Pressures

Authors: Walter Uhoya, Georgiy M. Tsoi, Yogesh K. Vohra, Michael A. McGuire, Athena S. Sefat, Brian C. Sales, David Mandrus, Samuel T. Weir

Abstract: We have investigated structural and magnetic phase transitions under high pressures in a quaternary rare earth transition metal arsenide oxide NdCoAsO compound that is isostructural to high temperature superconductor NdFeAsO. Four-probe electrical resistance measurements carried out in a designer diamond anvil cell show that the ferromagnetic Curie temperature and anti-ferromagnetic Neel temperatu… ▽ More We have investigated structural and magnetic phase transitions under high pressures in a quaternary rare earth transition metal arsenide oxide NdCoAsO compound that is isostructural to high temperature superconductor NdFeAsO. Four-probe electrical resistance measurements carried out in a designer diamond anvil cell show that the ferromagnetic Curie temperature and anti-ferromagnetic Neel temperature increase with an increase in pressure. High pressure x-ray diffraction studies using a synchrotron source show a structural phase transition from a tetragonal phase to a new crystallographic phase at a pressure of 23 GPa at 300 K. The NdCoAsO sample remained anti-ferromagnetic and non-superconducting to temperatures down to 10 K and to the highest pressure achieved in this experiment of 53 GPa. A P-T phase diagram for NdCoAsO is presented to a pressure of 53 GPa and low temperatures of 10 K. △ Less

Submitted 15 April, 2011; originally announced April 2011.

Comments: 6 pages, 6 figures, available online at stacks.iop.org/JPhysCM/22/185702

Journal ref: J. Phys.: Condens. Matter 22 (2010) 185702

Studies of Effects of Current on Exchange-Bias: A Brief Review

Authors: J. Bass, A. Sharma, Z. Wei, M. Tsoi

Abstract: MacDonald and co-workers recently predicted that high current densities could affect the magnetic order of antiferromagnetic (AFM) multilayers, in ways similar to those that occur in ferromagnetic (F) multilayers, and that changes in AFM magnetic order can produce an antiferromagnetic Giant Magnetoresistance (AGMR). Four groups have now studied current-driven effects on exchange bias at F/AFM in… ▽ More MacDonald and co-workers recently predicted that high current densities could affect the magnetic order of antiferromagnetic (AFM) multilayers, in ways similar to those that occur in ferromagnetic (F) multilayers, and that changes in AFM magnetic order can produce an antiferromagnetic Giant Magnetoresistance (AGMR). Four groups have now studied current-driven effects on exchange bias at F/AFM interfaces. In this paper, we first briefly review the main predictions by MacDonald and co-workers, and then the results of experiments on exchange bias that these predictions stimulated. △ Less

Submitted 21 April, 2008; originally announced April 2008.

Comments: 8 pages, 5 figures

Journal ref: Journal of Magnetics (Korean Magnetics Society), Vol. 13, Pp. 1-6 (2008)

Point-contact search for antiferromagnetic giant magnetoresistance

Authors: Z. Wei, A. Sharma, J. Bass, M. Tsoi

Abstract: We report the first measurements of effects of large current densities on current-perpendicular-to-plane magnetoresistance (MR) of magnetic multilayers containing two antiferromagnetic layers separated by a non-magnetic layer. These measurements were intended to search for a recently predicted antiferromagnetic giant magnetoresistance (AGMR) similar to GMR seen in multilayers containing two ferr… ▽ More We report the first measurements of effects of large current densities on current-perpendicular-to-plane magnetoresistance (MR) of magnetic multilayers containing two antiferromagnetic layers separated by a non-magnetic layer. These measurements were intended to search for a recently predicted antiferromagnetic giant magnetoresistance (AGMR) similar to GMR seen in multilayers containing two ferromagnetic layers separated by a non-magnetic layer. We report on MR measurements for current injected from point contacts into sandwiches containing different combinations of layers of F = CoFe and AFM = FeMn. In addition to: AFM/N/AFM, F/AFM/N/AFM, and F/AFM/N/AFM/F structures, initial results led us to examine also AFM/F/N/AFM, F/AFM, and single F- and AFM-layer structures. At low currents, no MR was observed in any samples, and no MR was observed at any current densities in samples containing only AFMs. Together, these results indicate that no AGMR is present in these samples. In samples containing F-layers, high current densities sometimes produced a small positive MR - largest resistance at high fields. For a given contact resistance, this MR was usually larger for thicker F-layers, and for a given current, it was usually larger for larger contact resistances (smaller contacts). We tentatively attribute this positive MR to suppression at high currents of spin accumulation induced around and within the F-layers. △ Less

Submitted 24 October, 2008; v1 submitted 1 November, 2007; originally announced November 2007.

Comments: outcome of further studies; to appear in J. Appl. Phys

Spin transfer in an antiferromagnet

Authors: Z. Wei, A. Sharma, A. S. Nunez, P. M. Haney, R. A. Duine, J. Bass, A. H. MacDonald, M. Tsoi

Abstract: An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous potential in a broad range of technologies, including magnetic memory and recording. Recently, it has been predicted that spin transfer is not limited to ferro… ▽ More An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous potential in a broad range of technologies, including magnetic memory and recording. Recently, it has been predicted that spin transfer is not limited to ferromagnets, but can also occur in antiferromagnetic materials and even be stronger under some conditions. In this paper we demonstrate transfer of spin angular momentum across an interface between ferromagnetic and antiferromagnetic metals. The spin transfer is mediated by an electrical current of high density (~10^12 A/m^2) and revealed by variation in the exchange bias at the ferromagnet/antiferromagnet interface. We find that, depending on the polarity of the electrical current flowing across the interface, the strength of the exchange bias can either increase or decrease. This finding is explained by the theoretical prediction that a spin polarized current generates a torque on magnetic moments in the antiferromagnet. Current-mediated variation of exchange bias can be used to control the magnetic state of spin-valve devices, e.g., in magnetic memory applications. △ Less

Submitted 16 June, 2006; originally announced June 2006.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 98, 116603 (2007)

Minimal field requirement in precessional magnetization switching

Authors: Di Xiao, M. Tsoi, Qian Niu

Abstract: We investigate the minimal field strength in precessional magnetization switching using the Landau-Lifshitz-Gilbert equation in under-critically damped systems. It is shown that precessional switching occurs when localized trajectories in phase space become unlocalized upon application of field pulses. By studying the evolution of the phase space, we obtain the analytical expression of the criti… ▽ More We investigate the minimal field strength in precessional magnetization switching using the Landau-Lifshitz-Gilbert equation in under-critically damped systems. It is shown that precessional switching occurs when localized trajectories in phase space become unlocalized upon application of field pulses. By studying the evolution of the phase space, we obtain the analytical expression of the critical switching field in the limit of small dam** for a magnetic object with biaxial anisotropy. We also calculate the switching times for the zero dam** situation. We show that applying field along the medium axis is good for both small field and fast switching times. △ Less

Submitted 24 September, 2004; originally announced September 2004.

Comments: 6 pages, 7 figures

Journal ref: J. Appl. Phys. 99, 013903 (2006)