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Ion-Beam Modification of Metastable Gallium Oxide Polymorphs
Authors:
D. I. Tetelbaum,
A. A. Nikolskaya,
D. S. Korolev,
A. I. Belov,
V. N. Trushin,
Yu. A. Dudin,
A. N. Mikhaylov,
A. I. Pechnikov,
M. P. Scheglov,
V. I. Nikolaev,
D. Gogova
Abstract:
Gallium oxide with a corundum structure (α-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta phase (\b{eta}-Ga2O3). However, the lower thermal stability of the α-phase at ambient conditions in comparison with the \b{eta}-phase requires careful investigation of i…
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Gallium oxide with a corundum structure (α-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta phase (\b{eta}-Ga2O3). However, the lower thermal stability of the α-phase at ambient conditions in comparison with the \b{eta}-phase requires careful investigation of its resistance to other external influences such as ion irradiation, ion do**, etc. In this work, the structural changes under the action of Al+ ion irradiation have been investigated for a polymorphic gallium oxide layers grown by hydride vapor phase epitaxy on c-plane sapphire and consisting predominantly of α-phase with inclusions of α(\k{appa})-phase. It is established by the X-ray diffraction technique that inclusions of α(\k{appa})-phase in the irradiated layer undergo the expansion along the normal to the substrate surface, while there is no a noticeable deformation for the α-phase. This speaks in favor of the different radiation tolerance of various Ga2O3 polymorphs, especially the higher radiation tolerance of the α-phase. This fact should be taken into account when utilizing ion implantation to modify gallium oxide properties in terms of development of efficient do** strategies.
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Submitted 27 February, 2021;
originally announced March 2021.
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The formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb layers
Authors:
A. V. Kudrin,
V. P. Lesnikov,
D. A. Pavlov,
Yu. V. Usov,
Yu. A. Danilov,
M. V. Dorokhin,
O. V. Vikhrova,
B. E. Milin,
R. N. Kriukov,
N. A. Sobolev,
V. N. Trushin
Abstract:
Multilayer structures on the basis of n-type (In,Fe)Sb and p-type (Ga,Fe)Sb diluted magnetic semiconductors (DMS) along with separate (In,Fe)Sb and (Ga,Fe)Sb layers were fabricated on GaAs substrates by pulsed laser sputtering of InSb, GaAs, GaSb, Sb and Fe targets in a vacuum. Transmission electron microscopy and energy-dispersive x-ray spectroscopy reveal a strong dependence of the phase composi…
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Multilayer structures on the basis of n-type (In,Fe)Sb and p-type (Ga,Fe)Sb diluted magnetic semiconductors (DMS) along with separate (In,Fe)Sb and (Ga,Fe)Sb layers were fabricated on GaAs substrates by pulsed laser sputtering of InSb, GaAs, GaSb, Sb and Fe targets in a vacuum. Transmission electron microscopy and energy-dispersive x-ray spectroscopy reveal a strong dependence of the phase composition of the (In,Fe)Sb compound on the growth temperature. An increase of the latter from 220C to 300C leads to a coalescence of Fe atoms and formation of a secondary crystalline phase in the (In,Fe)Sb layer with a total Fe content of ca. 10 at. %. At the same time, the Ga0.8Fe0.2Sb layers obtained at 220C and 300C are single-phase. The separate In0.8Fe0.2Sb and Ga0.8Fe0.2Sb layers grown on i-GaAs at 220C are DMS with Curie temperatures of ca. 190 K and 170 K, respectively. The three-layer p-i-n diode (In,Fe)Sb/GaAs/(Ga,Fe)Sb structure grown on a GaAs substrate at 220C with a Fe content of ca. 10 at. % in the single-phase (In,Fe)Sb and (Ga,Fe)Sb layers has a rather high crystalline quality and can be considered as a prototype of a bipolar spintronic device based on Fe-doped III-V semiconductors.
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Submitted 29 March, 2019; v1 submitted 31 October, 2018;
originally announced October 2018.
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Magnetic properties, chemical and phase composition of thin manganese silicide films fabricated by pulsed laser deposition
Authors:
M. V. Dorokhin,
Yu. M. Kuznetsov,
V. P. Lesnikov,
A. V. Kudrin,
I. V. Erofeeva,
A. V. Boryakov,
R. N. Kryukov,
D. E. Nikolitchev,
S. Yu. Zubkov,
V. N. Trushin,
P. B. Demina
Abstract:
Manganese silicide (MnxSiy) thin films with Mn content (CMn) varied from 24 at. % to 52 at. % were grown on i-GaAs (100) substrates. Chemical, phase composition and room temperature magnetic properties of the films were investigated. It was demonstrated that manganese silicide films revealing ferromagnetic properties are multiphase systems. The phases, which are believed to be non-magnetic at room…
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Manganese silicide (MnxSiy) thin films with Mn content (CMn) varied from 24 at. % to 52 at. % were grown on i-GaAs (100) substrates. Chemical, phase composition and room temperature magnetic properties of the films were investigated. It was demonstrated that manganese silicide films revealing ferromagnetic properties are multiphase systems. The phases, which are believed to be non-magnetic at room temperature, are compounds with Mn concentration exceeding the average Mn content of the film (higher manganese silicide, MnSi and Mn5Si3). Magnetic properties revealed are attributed with the secondary phases which are Mn doped silicon (Mn:Si) or Mn depleted compounds. For nearly single phase films (with very small 2-nd phase ratio) no room temperature ferromagnetism was observed.
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Submitted 16 November, 2018; v1 submitted 8 May, 2018;
originally announced May 2018.
