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20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer
Authors:
S. Zambito,
M. Milanesio,
T. Moretti,
L. Paolozzi,
M. Munker,
R. Cardella,
T. Kugathasan,
F. Martinelli,
A. Picardi,
M. Elviretti,
H. Rücker,
A. Trusch,
F. Cadoux,
R. Cardarelli,
S. Débieux,
Y. Favre,
C. A. Fenoglio,
D. Ferrere,
S. Gonzalez-Sevilla,
L. Iodice,
R. Kotitsa,
C. Magliocca,
M. Nessi,
A. Pizarro-Medina,
J. Sabater Iglesias
, et al. (3 additional authors not shown)
Abstract:
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer of 350 Ωcm resistivity were used to produce a fully depleted sensor. Laboratory and testbeam measurements of the analog channels present in the pixel…
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A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer of 350 Ωcm resistivity were used to produce a fully depleted sensor. Laboratory and testbeam measurements of the analog channels present in the pixel matrix show that the sensor has a 130 V wide bias-voltage operation plateau at which the efficiency is 99.8%. Although this prototype does not include an internal gain layer, the design optimised for timing of the sensor and the front-end electronics provides a time resolutions of 20 ps.
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Submitted 28 January, 2023;
originally announced January 2023.
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Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype
Authors:
G. Iacobucci,
S. Zambito,
M. Milanesio,
T. Moretti,
J. Saidi,
L. Paolozzi,
M. Munker,
R. Cardella,
F. Martinelli,
A. Picardi,
H. Rücker,
A. Trusch,
P. Valerio,
F. Cadoux,
R. Cardarelli,
S. Débieux,
Y. Favre,
C. A. Fenoglio,
D. Ferrere,
S. Gonzalez-Sevilla,
Y. Gurimskaya,
R. Kotitsa,
C. Magliocca,
M. Nessi,
A. Pizarro-Medina
, et al. (2 additional authors not shown)
Abstract:
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector…
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The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm^2, respectively. In this first prototype the time resolution depends significantly on the distance from the center of the pixel, varying at the highest power consumption measured between 13 ps at the center of the pixel and 25 ps in the inter-pixel region.
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Submitted 23 August, 2022;
originally announced August 2022.
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Picosecond Avalanche Detector -- working principle and gain measurement with a proof-of-concept prototype
Authors:
L. Paolozzi,
M. Munker,
R. Cardella,
M. Milanesio,
Y. Gurimskaya,
F. Martinelli,
A. Picardi,
H. Rücker,
A. Trusch,
P. Valerio,
F. Cadoux,
R. Cardarelli,
S. Débieux,
Y. Favre,
C. A. Fenoglio,
D. Ferrere,
S. Gonzalez-Sevilla,
R. Kotitsa,
C. Magliocca,
T. Moretti,
M. Nessi,
A. Pizarro Medina,
J. Sabater Iglesias,
J. Saidi,
M. Vicente Barreto Pinto
, et al. (2 additional authors not shown)
Abstract:
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The si…
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The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The signal is then induced by the secondary charges moving inside a thicker drift region. A proof-of-concept monolithic prototype, consisting of a matrix of hexagonal pixels with 100 $μ$m pitch, has been produced using the 130 nm SiGe BiCMOS process by IHP microelectronics. Measurements on probe station and with a $^{55}$Fe X-ray source show that the prototype is functional and displays avalanche gain up to a maximum electron gain of 23. A study of the avalanche characteristics, corroborated by TCAD simulations, indicates that space-charge effects due to the large primary charge produced by the conversion of X-rays from the $^{55}$Fe source limits the effective gain.
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Submitted 25 September, 2022; v1 submitted 16 June, 2022;
originally announced June 2022.
