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Picosecond transfer from short-term to long-term memory in analog antiferromagnetic memory device
Authors:
M. Surynek,
J. Zubac,
K. Olejnik,
A. Farkas,
F. Krizek,
L. Nadvornik,
P. Kubascik,
F. Trojanek,
R. P. Campion,
V. Novak,
T. Jungwirth,
P. Nemec
Abstract:
Experiments in materials with a compensated ordering of magnetic moments have demonstrated a potential for approaching the thermodynamic limit of the fastest and least-dissipative operation of a digital memory bit. In addition, these materials are very promising for a construction of energy-efficient analog devices with neuromorphic functionalities, which are inspired by computing-in-memory capabi…
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Experiments in materials with a compensated ordering of magnetic moments have demonstrated a potential for approaching the thermodynamic limit of the fastest and least-dissipative operation of a digital memory bit. In addition, these materials are very promising for a construction of energy-efficient analog devices with neuromorphic functionalities, which are inspired by computing-in-memory capabilities of the human brain. In this paper, we report on experimental separation of switching-related and heat-related resistance signal dynamics in memory devices microfabricated from CuMnAs antiferromagnetic metal. We show that the memory variable multilevel resistance can be used as a long-term memory (LTM), lasting up to minutes at room temperature. In addition, ultrafast reflectivity change and heat dissipation from nanoscale-thickness CuMnAs films, taking place on picosecond to hundreds of nanoseconds time scales, can be used as a short-term memory (STM). Information about input stimuli, represented by femtosecond laser pulses, can be transferred from STM to LTM after rehearsals at picosecond to nanosecond times in these memory devices, where information can be retrieved at times up to 10^15 longer than the input pulse duration. Our results open a route towards ultra-fast low-power implementations of spiking neuron and synapse functionalities using a resistive analog antiferromagnetic memory.
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Submitted 30 January, 2024;
originally announced January 2024.
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Attosecond control of solid-state high harmonic generation using ω-3ω fields
Authors:
Adam Gindl,
Pawan Suthar,
František Trojánek,
Petr Malý,
Thibault J. -Y. Derrien,
Martin Kozák
Abstract:
Controlling the electron dynamics in matter by individual oscillations of light fields has recently led to the development of attosecond metrology. One of the phenomena resulting from the nonlinear response of materials in the strong-field interaction regime is coherent emission of high energy photons. High harmonic spectra carry the fingerprints of sub-cycle electronic motion and the energy struc…
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Controlling the electron dynamics in matter by individual oscillations of light fields has recently led to the development of attosecond metrology. One of the phenomena resulting from the nonlinear response of materials in the strong-field interaction regime is coherent emission of high energy photons. High harmonic spectra carry the fingerprints of sub-cycle electronic motion and the energy structure of the studied system. Here we show that tailoring the waveform of the driving light by using a coherent combination with its third harmonic frequency allows to control the electron tunneling time within each half-cycle of the fundamental wave with attosecond precision. We introduce an experimental scheme in which we simultaneously monitor the modulation of amplitude and emission delays of high harmonic radiation and the excited electron population generated in crystalline silicon as a function of the relative phase between the ω-3ω fields. The results reveal unambiguously the connection between the dynamics of electron tunneling and high harmonic generation processes in solids.
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Submitted 11 October, 2023;
originally announced October 2023.
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Sub-surface alteration and related change in reflectance spectra of space-weathered materials
Authors:
K. Chrbolková,
P. Halodová,
T. Kohout,
J. Ďurech,
K. Mizohata,
P. Malý,
V. Dědič,
A. Penttilä,
F. Trojánek,
R. Jarugula
Abstract:
One of the main complications for the interpretation of reflectance spectra of airless planetary bodies is surface alteration by space weathering caused by irradiation by solar wind and micrometeoroid particles. We aim to evaluate the damage to the samples from H and laser irradiation and relate it to the observed alteration in the spectra. We used olivine (OL) and pyroxene (OPX) pellets irradiate…
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One of the main complications for the interpretation of reflectance spectra of airless planetary bodies is surface alteration by space weathering caused by irradiation by solar wind and micrometeoroid particles. We aim to evaluate the damage to the samples from H and laser irradiation and relate it to the observed alteration in the spectra. We used olivine (OL) and pyroxene (OPX) pellets irradiated by 5 keV H ions and individual fs laser pulses and measured their visible (VIS) and near-infrared (NIR) spectra. We observed the pellets with scanning and transmission electron microscopy. We studied structural, mineralogical, and chemical modifications in the samples and connected them to changes in the reflectance spectra. In both minerals, H irradiation induces partially amorphous sub-surface layers containing small vesicles. In OL pellets, these vesicles are more tightly packed than in OPX ones. Related spectral change is mainly in the VIS spectral slope. Changes due to laser irradiation are mostly dependent on material's melting temperature. Only the laser-irradiated OL contains nanophase Fe particles, which induce detectable spectral slope change throughout the measured spectral range. Our results suggest that spectral changes at VIS-NIR wavelengths are mainly dependent on thickness of (partially) amorphous sub-surface layers. Amorphisation smooths microroughness, increasing the contribution of volume scattering and absorption over surface scattering. Soon after exposure to the space environment, the appearance of partially amorphous sub-surface layers results in rapid changes in the VIS spectral slope. In later stages (onset of micrometeoroid bombardment), we expect an emergence of nanoparticles to also mildly affect the NIR spectral slope. An increase in dimensions of amorphous layers and vesicles in the more space-weathered material will only cause band-depth variation and darkening.
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Submitted 18 July, 2022;
originally announced July 2022.
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Ultrafast valley-selective coherent optical manipulation with excitons in WSe$_2$ and MoS$_2$ monolayers
Authors:
A. O. Slobodeniuk,
P. Koutenský,
M. Bartoš,
F. Trojánek,
P. Malý,
T. Novotný,
M. Kozák
Abstract:
Increasing the speed limits of conventional electronics requires innovative approaches to manipulate other quantum properties of electrons besides their charge. An alternative approach utilizes the valley degree of freedom in low-dimensional semiconductors. Here we demonstrate that the valley degeneracy of exciton energies in transition metal dichalcogenide monolayers may be lifted by coherent opt…
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Increasing the speed limits of conventional electronics requires innovative approaches to manipulate other quantum properties of electrons besides their charge. An alternative approach utilizes the valley degree of freedom in low-dimensional semiconductors. Here we demonstrate that the valley degeneracy of exciton energies in transition metal dichalcogenide monolayers may be lifted by coherent optical interactions on timescales corresponding to few tens of femtoseconds. The optical Stark and Bloch-Siegert effects generated by strong nonresonant circularly-polarized light induce valley-selective blue shifts of exciton quantum levels by more than 30 meV. We show these phenomena by studying the two most intensive exciton resonances in transiton metal dichalcogenide monolayers and compare the results to a theoretical model, which properly includes the Coulomb interaction and exciton dispersion. These results open the door for ultrafast valleytronics working at multiterahertz frequencies.
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Submitted 27 March, 2023; v1 submitted 2 April, 2022;
originally announced April 2022.
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Semiconductor Bloch equation analysis of optical Stark and Bloch-Siegert shifts in monolayers WSe$_2$ and MoS$_2$
Authors:
A. O. Slobodeniuk,
P. Koutenský,
M. Bartoš,
F. Trojánek,
P. Malý,
T. Novotný,
M. Kozák
Abstract:
We report on the theoretical and experimental investigation of valley-selective optical Stark and Bloch-Siegert shifts of exciton resonances in monolayers WSe$_2$ and MoS$_2$ induced by strong circularly polarized nonresonant optical fields. We predict and observe transient shifts of both 1sA and 1sB exciton transitions in the linear interaction regime. The theoretical description is based on semi…
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We report on the theoretical and experimental investigation of valley-selective optical Stark and Bloch-Siegert shifts of exciton resonances in monolayers WSe$_2$ and MoS$_2$ induced by strong circularly polarized nonresonant optical fields. We predict and observe transient shifts of both 1sA and 1sB exciton transitions in the linear interaction regime. The theoretical description is based on semiconductor Bloch equations. The solutions of the equations are obtained with a modified perturbation technique, which takes into account many-body Coulomb interaction effects. These solutions allow to explain the polarization dependence of the shifts and calculate their values analytically. We found experimentally the limits of the applicability of the theoretical description by observing the transient exciton spectra change due to many-body effects at high field amplitudes of the driving wave.
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Submitted 12 December, 2022; v1 submitted 2 April, 2022;
originally announced April 2022.
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Comparison of space weathering spectral changes induced by solar wind and micrometeoroid impacts using ion- and femtosecond-laser-irradiated olivine and pyroxene
Authors:
K. Chrbolková,
R. Brunetto,
J. Ďurech,
T. Kohout,
K. Mizohata,
P. Malý,
V. Dědič,
C. Lantz,
A. Penttilä,
F. Trojánek,
A. Maturilli
Abstract:
Space weathering is a process that changes the surface of airless planetary bodies. Prime space weathering agents are solar wind irradiation and micrometeoroid bombardment. These processes alter planetary reflectance spectra and often modify their compositional diagnostic features. In this work we focused on simulating and comparing the spectral changes caused by solar wind irradiation and by micr…
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Space weathering is a process that changes the surface of airless planetary bodies. Prime space weathering agents are solar wind irradiation and micrometeoroid bombardment. These processes alter planetary reflectance spectra and often modify their compositional diagnostic features. In this work we focused on simulating and comparing the spectral changes caused by solar wind irradiation and by micrometeoroid bombardment to gain a better understanding of these individual space weathering processes. We used olivine and pyroxene pellets as proxies for planetary materials. To simulate solar wind irradiation we used hydrogen, helium, and argon ions with energies from 5 to 40 keV and fluences of up to $10^{18}$ particles/cm$^2$. To simulate micrometeoroid bombardment we used individual femtosecond laser pulses. We analysed the corresponding evolution of different spectral parameters, which we determined by applying the Modified Gaussian Model, and we also conducted principal component analysis. The original mineralogy of the surface influences the spectral evolution more than the weathering agent, as seen from the diverse evolution of the spectral slope of olivine and pyroxene upon irradiation. The spectral slope changes seen in olivine are consistent with observations of A-type asteroids, while the moderate to no slope changes observed in pyroxene are consistent with asteroid (4) Vesta. We also observed some differences in the spectral effects induced by the two weathering agents. Ions simulating solar wind have a smaller influence on longer wavelengths of the spectra than laser irradiation simulating micrometeoroid impacts. This is most likely due to the different penetration depths of ions and laser pulses. Our results suggest that in some instances it might be possible to distinguish between the contributions of the two agents on a weathered surface.
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Submitted 2 August, 2021;
originally announced August 2021.
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Voigt effect-based wide-field magneto-optical microscope integrated in a pump-probe experimental setup
Authors:
T. Janda,
L. Nadvornik,
J. Kucharik,
D. Butkovicova,
E. Schmoranzerova,
F. Trojanek,
P. Nemec
Abstract:
In this work we describe an experimental setup for spatially-resolved pump-probe experiment with integrated wide-field magneto-optical (MO) microscope. The MO microscope can be used to study ferromagnetic materials with both perpendicular-to-plane and in-plane magnetic anisotropy via polar Kerr and Voigt effects, respectively. The functionality of the Voigt effect-based microscope was tested using…
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In this work we describe an experimental setup for spatially-resolved pump-probe experiment with integrated wide-field magneto-optical (MO) microscope. The MO microscope can be used to study ferromagnetic materials with both perpendicular-to-plane and in-plane magnetic anisotropy via polar Kerr and Voigt effects, respectively. The functionality of the Voigt effect-based microscope was tested using an in-plane magnetized ferromagnetic semiconductor (Ga,Mn)As. It was revealed that the presence of mechanical defects in the (Ga,Mn)As epilayer alters significantly the magnetic anisotropy in their proximity. The importance of MO experiments with simultaneous temporal and spatial resolutions was demonstrated using (Ga,Mn)As sample attached to a piezoelectric actuator, which produces a voltage-controlled strain. We observed a considerably different behavior in different parts of the sample that enabled us to identify sample parts where the epilayer magnetic anisotropy was significantly modified by a presence of the piezostressor and where it was not. Finally, we discuss the possible applicability of our experimental setup for the research of compensated antiferromagnets, where only MO effects even in magnetic moments are present.
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Submitted 28 February, 2018;
originally announced February 2018.
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Fast optical control of spin in semiconductor interfacial structures
Authors:
L. Nádvorník,
M. Surýnek,
K. Olejník,
V. Novák,
J. Wunderlich,
F. Trojánek,
T. Jungwirth,
P. Němec
Abstract:
We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations origi…
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We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the system by means of the optical orientation, can be controlled by reducing the electrostatic confinement of the system using an additional generation of photocarriers. It is also shown that the disturbed confinement recovers within hundreds of picoseconds after which spins can be again photo-injected into the system.
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Submitted 30 May, 2017;
originally announced May 2017.
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Optical determination of the Neel vector in a CuMnAs thin-film antiferromagnet
Authors:
V. Saidl,
P. Nemec,
P. Wadley,
V. Hills,
R. P. Campion,
V. Novak,
K. W. Edmonds,
F. Maccherozzi,
S. S. Dhesi,
B. L. Gallagher,
F. Trojanek,
J. Kunes,
J. Zelezny,
P. Maly,
T. Jungwirth
Abstract:
Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultra-fast spin dynamics and other favorable characteristics which may find u…
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Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices. Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultra-fast spin dynamics and other favorable characteristics which may find utility in fields ranging from magnetic memories to optical signal processing. However, the absence of a net magnetic moment and the ultra-short magnetization dynamics timescales make antiferromagnets notoriously difficult to study by common magnetometers or magnetic resonance techniques. In this paper we demonstrate the experimental determination of the Neel vector in a thin film of antiferromagnetic CuMnAs which is the prominent material used in the first realization of antiferromagnetic memory chips. We employ a femtosecond pump-probe magneto-optical experiment based on magnetic linear dichroism. This table-top optical method is considerably more accessible than the traditionally employed large scale facility techniques like neutron diffraction and X-ray magnetic dichroism measurements. This optical technique allows an unambiguous direct determination of the Neel vector orientation in thin antiferromagnetic films utilized in devices directly from measured data without fitting to a theoretical model.
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Submitted 5 August, 2016;
originally announced August 2016.
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Inertial displacement of a domain wall excited by ultra-short circularly polarized laser pulses
Authors:
T. Janda,
P. E. Roy,
R. M. Otxoa,
Z. Soban,
A. Ramsay,
A. C. Irvine,
F. Trojanek,
R. P. Campion,
B. L. Gallagher,
P. Nemec,
T. Jungwirth,
J. Wunderlich
Abstract:
Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement…
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Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement of a domain wall in a ferromagnetic semiconductor. In our study we combine electrical measurements and magneto-optical imaging of the domain wall displacement with micromagnetic simulations. The optical spin transfer torque acts over a picosecond recombination time of the spin polarized photo-carriers which only leads to a deformation of the internal domain wall structure. We show that subsequent depinning and micro-meter distance displacement without an applied magnetic field or any other external stimuli can only occur due to the inertia of the domain wall.
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Submitted 16 June, 2016;
originally announced June 2016.
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Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction
Authors:
L. Nádvorník,
K. Olejník,
P. Němec,
V. Novák,
T. Janda,
J. Wunderlich,
F. Trojánek,
T. Jungwirth
Abstract:
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude…
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We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly non-linear in the pn-bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the non-linear change in the carrier density at the Hall cross with the pn-bias.
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Submitted 13 May, 2016;
originally announced May 2016.
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Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer
Authors:
L. Nádvorník,
P. Němec,
T. Janda,
K. Olejník,
V. Novák,
V. Skoromets,
H. Němec,
P. Kužel,
F. Trojánek,
T. Jungwirth,
J. Wunderlich
Abstract:
The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and t…
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The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and the time-scale at which spin-information is transferred from the injector to the detector. Using this technique, we demonstrate that in an undoped GaAs/AlGaAs layer spins are detected at distances reaching more than ten microns from the injection point at times as short as nanoseconds after the pump-pulse. The observed unique combination of the long-range and highrate electronic spin-transport requires simultaneous suppression of mechanisms limiting the spin life-time and mobility of carriers. Unlike earlier attempts focusing on elaborate do**, gating, or heterostructures we demonstrate that the bare GaAs/AlGaAs layer intrinsically provides superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex heterostructures.
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Submitted 7 October, 2015;
originally announced October 2015.
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Optical investigation of magneto-structural phase transition in FeRh
Authors:
V. Saidl,
M. Brajer,
L. Horak,
H. Reichlova,
K. Vyborny,
M. Veis,
T. Janda,
F. Trojanek,
I. Fina,
X. Marti,
T. Jungwirth,
P. Nemec
Abstract:
Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near infrared spectral ranges. This phenomenon was used to measure the phase transition temperature in F…
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Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near infrared spectral ranges. This phenomenon was used to measure the phase transition temperature in FeRh films with thicknesses from 6 to 100 nm and it was observed that the hysteretic transition region broadens significantly in the thinner films.
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Submitted 24 August, 2015;
originally announced August 2015.
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Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As
Authors:
N. Tesarova,
D. Butkovicova,
R. P. Campion,
A. W. Rushforth,
K. W. Edmonds,
P. Wadley,
B. L. Gallagher,
E. Schmoranzerova,
F. Trojanek,
P. Maly,
P. Motloch,
V. Novak,
T. Jungwirth,
P. Nemec
Abstract:
We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis o…
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We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data we determined the magnetic anisotropy fields, the spin stiffness and the Gilbert dam** constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular to plane anisotropy field but also to an increase of the Gilbert dam** and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material. We report that the magnetization precession dam** is stronger for the n = 1 spin wave resonance mode than for the n = 0 uniform magnetization precession mode.
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Submitted 19 May, 2014;
originally announced May 2014.
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Establishing micromagnetic parameters of ferromagnetic semiconductor (Ga,Mn)As
Authors:
P. Nemec,
V. Novak,
N. Tesarova,
E. Rozkotova,
H. Reichlova,
D. Butkovicova,
F. Trojanek,
K. Olejnik,
P. Maly,
R. P. Campion,
B. L. Gallagher,
Jairo Sinova,
T. Jungwirth
Abstract:
(Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of material systems. Its recognition and utility as an ideal model material for spintronics research has been undermined by the large scatter in reported semiconducti…
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(Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of material systems. Its recognition and utility as an ideal model material for spintronics research has been undermined by the large scatter in reported semiconducting do** trends and micromagnetic parameters. In this paper we establish these basic material characteristics by individually optimizing the highly non-equilibrium synthesis for each Mn-do** level and by simultaneously determining all micromagnetic parameters from one set of magneto-optical pump-and-probe measurements. Our (Ga,Mn)As thin-film epilayers, spannig the wide range of accessible do**s, have sharp thermodynamic Curie point singularities typical of uniform magnetic systems. The materials show systematic trends of increasing magnetization, carrier density, and Curie temperature (reaching 188 K) with increasing do**, and monotonous do** dependence of the Gilbert dam** constant of ~0.1-0.01 and the spin stiffness of ~2-3 meVnm^2. These results render (Ga,Mn)As well controlled degenerate semiconductor with basic magnetic characteristics comparable to common band ferromagnets.
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Submitted 2 July, 2012;
originally announced July 2012.
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Experimental observation of the optical spin-orbit torque
Authors:
N. Tesarova,
P. Nemec,
E. Rozkotova,
J. Zemen,
F. Trojanek,
K. Olejnik,
V. Novak,
P. Maly,
T. Jungwirth
Abstract:
Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating magnetic moments by electric fields and is the basis of the emerging technologies for scalable magnetoresistive random access memories. In our previous work we have r…
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Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating magnetic moments by electric fields and is the basis of the emerging technologies for scalable magnetoresistive random access memories. In our previous work we have reported experimental observation of the optical counterpart of STT in which a circularly polarized pump laser pulse acts as the external polarizer, allowing to study and utilize the phenomenon on several orders of magnitude shorter timescales than in the electric current induced STT. Recently it has been theoretically proposed and experimentally demonstrated that in the absence of an external polarizer, carriers in a magnet under applied electric field can develop a non-equilibrium spin polarization due to the relativistic spin-orbit coupling, resulting in a current induced spin-orbit torque (SOT) acting on the magnetization. In this paper we report the observation of the optical counterpart of SOT. At picosecond time-scales, we detect excitations of magnetization of a ferromagnetic semiconductor (Ga,Mn)As which are independent of the polarization of the pump laser pulses and are induced by non-equilibrium spin-orbit coupled photo-holes.
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Submitted 2 July, 2012;
originally announced July 2012.
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Investigation of Optical Spin Transfer Torque in Ferromagnetic Semiconductor GaMnAs by Magneto-Optical Pump-and-Probe Method
Authors:
Eva Rozkotova,
Petr Nemec,
Nada Tesarova,
Frantisek Trojanek,
Petr Maly,
Vit Novak,
Tomas Jungwirth
Abstract:
We report on magnetization precession induced in (Ga,Mn)As by an optical spin transfer torque (OSTT). This phenomenon, which corresponds to a transfer of angular momentum from optically-injected spin-polarized electrons to magnetization, was predicted theoretically in 2004 and observed experimentally by our group in 2012. In this paper we provide experimental details about the observation of OSTT…
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We report on magnetization precession induced in (Ga,Mn)As by an optical spin transfer torque (OSTT). This phenomenon, which corresponds to a transfer of angular momentum from optically-injected spin-polarized electrons to magnetization, was predicted theoretically in 2004 and observed experimentally by our group in 2012. In this paper we provide experimental details about the observation of OSTT by a time-resolved pump-and-probe magneto-optical technique. In particular, we show that the precession of magnetization due to OSTT can be experimentally separated from that induced by the well known magnetic-anisotropy-related mechanism in a hybrid structure piezo-stressor/(Ga,Mn)As with an in situ electrical control of the magnetic anisotropy. We also illustrate that OSTT is clearly apparent in the measured dynamical magneto-optical signal in a large variety of (Ga,Mn)As samples with a Mn concentration from 3% to 9%.
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Submitted 2 March, 2012;
originally announced March 2012.
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Experimental observation of the optical spin transfer torque
Authors:
P. Nemec,
E. Rozkotova,
N. Tesarova,
F. Trojanek,
E. De Ranieri,
K. Olejnik,
J. Zemen,
V. Novak,
M. Cukr,
P. Maly,
T. Jungwirth
Abstract:
The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven magnetization dynamics in magnetic nanostructures and plays an important role in the development of a new generation of memory devices and tunable oscillators. Optical…
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The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven magnetization dynamics in magnetic nanostructures and plays an important role in the development of a new generation of memory devices and tunable oscillators. Optical excitations of magnetic systems by laser pulses have been a separate research field whose aim is to explore magnetization dynamics at short time scales and enable ultrafast spintronic devices. We report the experimental observation of the optical spin transfer torque, predicted theoretically several years ago building the bridge between these two fields of spintronics research. In a pump-and-probe optical experiment we measure coherent spin precession in a (Ga,Mn)As ferromagnetic semiconductor excited by circularly polarized laser pulses. During the pump pulse, the spin angular momentum of photo-carriers generated by the absorbed light is transferred to the collective magnetization of the ferromagnet. We interpret the observed optical spin transfer torque and the magnetization precession it triggers on a quantitative microscopic level. Bringing the spin transfer physics into optics introduces a fundamentally distinct mechanism from the previously reported thermal and non-thermal laser excitations of magnets. Bringing optics into the field of spin transfer torques decreases by several orders of magnitude the timescales at which these phenomena are explored and utilized.
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Submitted 6 January, 2012;
originally announced January 2012.
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Direct measurement of the three dimensional magnetization vector trajectory in GaMnAs by a magneto-optical pump-and-probe method
Authors:
N. Tesarova,
P. Nemec,
E. Rozkotova,
J. Subrt,
H. Reichlova,
D. Butkovicova,
F. Trojanek,
P. Maly,
V. Novak,
T. Jungwirth
Abstract:
We report on a quantitative experimental determination of the three-dimensional magnetization vector trajectory in GaMnAs by means of the static and time-resolved pump-and-probe magneto-optical measurements. The experiments are performed in a normal incidence geometry and the time evolution of the magnetization vector is obtained without any numerical modeling of magnetization dynamics. Our experi…
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We report on a quantitative experimental determination of the three-dimensional magnetization vector trajectory in GaMnAs by means of the static and time-resolved pump-and-probe magneto-optical measurements. The experiments are performed in a normal incidence geometry and the time evolution of the magnetization vector is obtained without any numerical modeling of magnetization dynamics. Our experimental method utilizes different polarization dependences of the polar Kerr effect and magnetic linear dichroism to disentangle the pump-induced out-of-plane and in-plane motions of magnetization, respectively. We demonstrate that the method is sensitive enough to allow for the determination of small angle excitations of the magnetization in GaMnAs. The method is readily applicable to other magnetic materials with sufficiently strong circular and linear magneto-optical effects.
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Submitted 5 January, 2012;
originally announced January 2012.
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Non-thermal laser induced precession of magnetization in ferromagnetic semiconductor (Ga,Mn)As
Authors:
P. Nemec,
E. Rozkotova,
N. Tesarova,
F. Trojanek,
K. Olejnik,
J. Zemen,
V. Novak,
M. Cukr,
P. Maly,
T. Jungwirth
Abstract:
Non-thermal laser induced spin excitations, recently discovered in conventional oxide and metal ferromagnets, open unprecedented opportunities for research and applications of ultrafast optical manipulation of magnetic systems. Ferromagnetic semiconductors, and (Ga,Mn)As in particular, should represent ideal systems for exploring this new field. Remarkably, the presence of non-thermal effects has…
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Non-thermal laser induced spin excitations, recently discovered in conventional oxide and metal ferromagnets, open unprecedented opportunities for research and applications of ultrafast optical manipulation of magnetic systems. Ferromagnetic semiconductors, and (Ga,Mn)As in particular, should represent ideal systems for exploring this new field. Remarkably, the presence of non-thermal effects has remained one of the outstanding unresolved problems in the research of ferromagnetic semiconductors to date. Here we demonstrate that coherent magnetization dynamics can be excited in (Ga,Mn)As non-thermally by a transfer of angular momentum from circularly polarized femtosecond laser pulses and by a combination of non-thermal and thermal effects due to a transfer of energy from laser pulses. The thermal effects can be completely suppressed in piezo-electrically controlled samples. Our work is based on pump-and-probe measurements in a large set of (Ga,Mn)As epilayers and on systematic analysis of circular and linear magneto-optical coefficients. We provide microscopic theoretical interpretation of the experimental results.
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Submitted 5 January, 2011;
originally announced January 2011.
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Laser-induced Precession of Magnetization in GaMnAs
Authors:
E. Rozkotova,
P. Nemec,
D. Sprinzl,
P. Horodyska,
F. Trojanek,
P. Maly,
V. Novak,
K. Olejnik,
M. Cukr,
T. Jungwirth
Abstract:
We report on the photo-induced precession of the ferromagnetically coupled Mn spins in (Ga,Mn)As, which is observed even with no external magnetic field applied. We concentrate on various experimental aspects of the time-resolved magneto-optical Kerr effect (TR-MOKE) technique that can be used to clarify the origin of the detected signals. We show that the measured data typically consist of seve…
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We report on the photo-induced precession of the ferromagnetically coupled Mn spins in (Ga,Mn)As, which is observed even with no external magnetic field applied. We concentrate on various experimental aspects of the time-resolved magneto-optical Kerr effect (TR-MOKE) technique that can be used to clarify the origin of the detected signals. We show that the measured data typically consist of several different contributions, among which only the oscillatory signal is directly connected with the ferromagnetic order in the sample.
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Submitted 3 March, 2008;
originally announced March 2008.
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Light-induced magnetization precession in GaMnAs
Authors:
E. Rozkotova,
P. Nemec,
P. Horodyska,
D. Sprinzl,
F. Trojanek,
P. Maly,
V. Novak,
K. Olejnik,
M. Cukr,
T. Jungwirth
Abstract:
We report dynamics of the transient polar Kerr rotation (KR) and of the transient reflectivity induced by femtosecond laser pulses in ferromagnetic (Ga,Mn)As with no external magnetic field applied. It is shown that the measured KR signal consist of several different contributions, among which only the oscillatory signal is directly connected with the ferromagnetic order in (Ga,Mn)As. The origin…
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We report dynamics of the transient polar Kerr rotation (KR) and of the transient reflectivity induced by femtosecond laser pulses in ferromagnetic (Ga,Mn)As with no external magnetic field applied. It is shown that the measured KR signal consist of several different contributions, among which only the oscillatory signal is directly connected with the ferromagnetic order in (Ga,Mn)As. The origin of the light-induced magnetization precession is discussed and the magnetization precession dam** (Gilbert dam**) is found to be strongly influenced by annealing of the sample.
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Submitted 10 March, 2008; v1 submitted 14 February, 2008;
originally announced February 2008.
