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Coupling of Magnetic Phases at Nickelate Interfaces
Authors:
C. Domínguez,
J. Fowlie,
A. B. Georgescu,
B. Mundet,
N. Jaouen,
M. Viret,
A. Suter,
A. J. Millis,
Z. Salman,
T. Prokscha,
M. Gibert,
J. -M. Triscone
Abstract:
In this work we present a model system built out of artificially layered materials, allowing us to understand the interrelation of magnetic phases with that of the metallic-insulating phase at long length-scales, and enabling new strategies for the design and control of materials in devices. The artificial model system consists of superlattices made of SmNiO$_3$ and NdNiO$_3$ layers -- two members…
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In this work we present a model system built out of artificially layered materials, allowing us to understand the interrelation of magnetic phases with that of the metallic-insulating phase at long length-scales, and enabling new strategies for the design and control of materials in devices. The artificial model system consists of superlattices made of SmNiO$_3$ and NdNiO$_3$ layers -- two members of the fascinating rare earth nickelate family, having different metal-to-insulator and magnetic transition temperatures. By combining two complementary techniques -- resonant elastic x-ray scattering and muon spin relaxation -- we show how the magnetic order evolves, in this complex multicomponent system, as a function of temperature and superlattice periodicity. We demonstrate that the length scale of the coupling between the antiferromagnetic and paramagnetic phases is longer than that of the electronic metal-insulator phase transition -- despite being subsidiary to it. This can be explained via a Landau theory -- where the bulk magnetic energy plus a gradient cost between magnetic and non magnetic phases are considered. These results provide a clear understanding of the coupling of magnetic transitions in systems sharing identical order parameters.
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Submitted 12 November, 2022;
originally announced November 2022.
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Optical properties of LaNiO3 films tuned from compressive to tensile strain
Authors:
I. Ardizzone,
M. Zingl,
J. Teyssier,
H. U. R. Strand,
O. Peil,
J. Fowlie,
A. B. Georgescu,
S. Catalano,
N. Bachar,
A. B. Kuzmenko,
M. Gibert,
J. -M. Triscone,
A. Georges,
D. van der Marel
Abstract:
Materials with strong electronic correlations host remarkable -- and technologically relevant -- phenomena such as magnetism, superconductivity and metal-insulator transitions. Harnessing and controlling these effects is a major challenge, on which key advances are being made through lattice and strain engineering in thin films and heterostructures, leveraging the complex interplay between electro…
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Materials with strong electronic correlations host remarkable -- and technologically relevant -- phenomena such as magnetism, superconductivity and metal-insulator transitions. Harnessing and controlling these effects is a major challenge, on which key advances are being made through lattice and strain engineering in thin films and heterostructures, leveraging the complex interplay between electronic and structural degrees of freedom. Here we show that the electronic structure of LaNiO3 can be tuned by means of lattice engineering. We use different substrates to induce compressive and tensile biaxial epitaxial strain in LaNiO3 thin films. Our measurements reveal systematic changes of the optical spectrum as a function of strain and, notably, an increase of the low-frequency free carrier weight as tensile strain is applied. Using density functional theory (DFT) calculations, we show that this apparently counter-intuitive effect is due to a change of orientation of the oxygen octahedra.The calculations also reveal drastic changes of the electronic structure under strain, associated with a Fermi surface Lifshitz transition. We provide an online applet to explore these effects. The experimental value of integrated spectral weight below 2 eV is significantly (up to a factor of 3) smaller than the DFT results, indicating a transfer of spectral weight from the infrared to energies above 2 eV. The suppression of the free carrier weight and the transfer of spectral weight to high energies together indicate a correlation-induced band narrowing and free carrier mass enhancement due to electronic correlations. Our findings provide a promising avenue for the tuning and control of quantum materials employing lattice engineering.
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Submitted 30 September, 2020;
originally announced September 2020.
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Probing photo-induced rearrangements in the NdNiO$_{3}$ magnetic spiral with polarization-sensitive ultrafast resonant soft x-ray scattering
Authors:
K. R. Beyerlein,
A. S. Disa,
M Först,
M. Henstridge,
T. Gebert,
T. Forrest,
A. Fitzpatrick,
C. Dominguez,
J. Fowlie,
M. Gibert,
J. -M. Triscone,
S. S. Dhesi,
A. Cavalleri
Abstract:
We use resonant soft X-ray diffraction to track the photo-induced dynamics of the antiferromagnetic structure in a NdNiO$_{3}$ thin film. Femtosecond laser pulses with a photon energy of 0.61 eV, resonant with electron transfer between long-bond and short-bond nickel sites, are used to excite the material and drive an ultrafast insulator-metal transition. Polarization sensitive soft X-ray diffract…
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We use resonant soft X-ray diffraction to track the photo-induced dynamics of the antiferromagnetic structure in a NdNiO$_{3}$ thin film. Femtosecond laser pulses with a photon energy of 0.61 eV, resonant with electron transfer between long-bond and short-bond nickel sites, are used to excite the material and drive an ultrafast insulator-metal transition. Polarization sensitive soft X-ray diffraction, resonant to the nickel L$_{3}$-edge, then probes the evolution of the underlying magnetic spiral as a function of time delay with 80 picosecond time resolution. By modelling the azimuthal dependence of the scattered intensity for different linear X-ray polarizations, we benchmark the changes of the local magnetic moments and the spin alignment. The measured changes are consistent with a reduction of the long-bond site magnetic moments and an alignment of the spins towards a more collinear structure at early time delays.
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Submitted 18 June, 2020; v1 submitted 14 April, 2020;
originally announced April 2020.
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Multiple supersonic phase fronts launched at a complex-oxide hetero-interface
Authors:
M. Först,
K. R. Beyerlein,
R. Mankowsky,
W. Hu,
G. Mattoni,
S. Catalano,
M. Gibert,
O. Yefanov,
J. N. Clark,
A. Frano,
J. M. Glownia,
M. Chollet,
H. Lemke,
B. Moser,
S. P. Collins,
S. S. Dhesi,
A. D. Caviglia,
J. -M. Triscone,
A. Cavalleri
Abstract:
Selective optical excitation of a substrate lattice can drive phase changes across hetero-interfaces. This phenomenon is a non-equilibrium analogue of static strain control in heterostructures and may lead to new applications in optically controlled phase change devices. Here, we make use of time-resolved non-resonant and resonant x-ray diffraction to clarify the underlying physics, and to separat…
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Selective optical excitation of a substrate lattice can drive phase changes across hetero-interfaces. This phenomenon is a non-equilibrium analogue of static strain control in heterostructures and may lead to new applications in optically controlled phase change devices. Here, we make use of time-resolved non-resonant and resonant x-ray diffraction to clarify the underlying physics, and to separate different microscopic degrees of freedom in space and time. We measure the dynamics of the lattice and that of the charge disproportionation in NdNiO3, when an insulator-metal transition is driven by coherent lattice distortions in the LaAlO3 substrate. We find that charge redistribution propagates at supersonic speeds from the interface into the NdNiO3 film, followed by a sonic lattice wave. When combined with measurements of magnetic disordering and of the metal-insulator transition, these results establish a hierarchy of events for ultrafast control at complex oxide hetero-interfaces.
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Submitted 13 December, 2016;
originally announced December 2016.
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Modulation of the superconducting critical temperature due to quantum confinement at the LaAlO$_3$/SrTiO$_3$ interface
Authors:
D. Valentinis,
S. Gariglio,
A. Fête,
J. -M. Triscone,
C. Berthod,
D. van der Marel
Abstract:
Superconductivity develops in bulk doped SrTiO$_3$ and at the LaAlO$_3$/SrTiO$_3$ interface with a dome-shaped density dependence of the critical temperature $T_c$, despite different dimensionalities and geometries. We propose that the $T_c$ dome of LaAlO$_3$/SrTiO$_3$ is a shape resonance due to quantum confinement of superconducting bulk SrTiO$_3$. We substantiate this interpretation by comparin…
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Superconductivity develops in bulk doped SrTiO$_3$ and at the LaAlO$_3$/SrTiO$_3$ interface with a dome-shaped density dependence of the critical temperature $T_c$, despite different dimensionalities and geometries. We propose that the $T_c$ dome of LaAlO$_3$/SrTiO$_3$ is a shape resonance due to quantum confinement of superconducting bulk SrTiO$_3$. We substantiate this interpretation by comparing the exact solutions of a three-dimensional and quasi-two-dimensional two-band BCS gap equation. This comparison highlights the role of heavy bands for $T_c$ in both geometries. For bulk SrTiO$_3$, we extract the density dependence of the pairing interaction from the fit to experimental data. We apply quantum confinement in a square potential well of finite depth and calculate $T_c$ in the confined configuration. We compare the calculated $T_c$ to transport experiments and provide an explanation as to why the optimal $T_c$'s are so close to each other in two-dimensional interfaces and the three-dimensional bulk material.
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Submitted 21 September, 2017; v1 submitted 23 November, 2016;
originally announced November 2016.
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Large phonon-drag enhancement induced by narrow quantum confinement at the LaAlO3/SrTiO3 interface
Authors:
I. Pallecchi,
F. Telesio,
D. Marre',
D. Li,
S. Gariglio,
J. -M. Triscone,
A. Filippetti
Abstract:
The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals. For the interface we find a region below T =50 K where thermopower is dominated by phonon-drag, whose amplitude is hugely amplified with respect to the corresponding bulk value, reaching values ~mV/K an…
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The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals. For the interface we find a region below T =50 K where thermopower is dominated by phonon-drag, whose amplitude is hugely amplified with respect to the corresponding bulk value, reaching values ~mV/K and above. The phonon-drag enhancement at the interface is traced back to the tight carrier confinement of the 2DES, and represents a sharp signature of strong electron-acoustic phonon coupling at the interface.
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Submitted 18 May, 2016;
originally announced May 2016.
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Broadband THz spectroscopy of the insulator-metal transition driven by coherent lattice deformation at the SmNiO3/LaAlO3 interface
Authors:
W. Hu,
S. Catalano,
M. Gibert,
J. -M. Triscone,
A. Cavalleri
Abstract:
We investigate the non-equilibrium insulator-metal transition driven in a SmNiO3 thin film by coherent optical excitation of the LaAlO3 substrate lattice. By probing the transient optical properties over a broad frequency range (100 - 800 cm^-1), we analyze both the time dependent metallic plasma and the infrared optical phonon line shapes. We show that the light-induced metallic phase in SmNiO3 h…
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We investigate the non-equilibrium insulator-metal transition driven in a SmNiO3 thin film by coherent optical excitation of the LaAlO3 substrate lattice. By probing the transient optical properties over a broad frequency range (100 - 800 cm^-1), we analyze both the time dependent metallic plasma and the infrared optical phonon line shapes. We show that the light-induced metallic phase in SmNiO3 has the same carrier density as the equilibrium metallic phase. We also report that the LaAlO3 substrate acts as a transducer only at the earlier time delays, as the vibrations are driven coherently. No long-lived structural rearrangement takes place in the substrate. Finally, we show that the transient insulator-metal transition occurs both below and above the Néel temperature. We conclude that the supersonic melting of magnetic order measured with ultrafast x-rays is not the driving force of the formation of the metallic phase. We posit that the insulator metal transition may origin from the rearrangement of ordered charges at the interface propagating into the film.
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Submitted 29 February, 2016;
originally announced February 2016.
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Optical spectroscopy and the nature of the insulating state of rare-earth nickelates
Authors:
J. Ruppen,
J. Teyssier,
O. E. Peil,
S. Catalano,
M. Gibert,
J. Mravlje,
J. -M. Triscone,
A. Georges,
D. van der Marel
Abstract:
Using a combination of spectroscopic ellipsometry and DC transport measurements, we determine the temperature dependence of the optical conductivity of NdNiO$_3$ and SmNiO$_{3}$ films. The optical spectra show the appearance of a characteristic two-peak structure in the near-infrared when the material passes from the metal to the insulator phase. Dynamical mean-field theory calculations confirm th…
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Using a combination of spectroscopic ellipsometry and DC transport measurements, we determine the temperature dependence of the optical conductivity of NdNiO$_3$ and SmNiO$_{3}$ films. The optical spectra show the appearance of a characteristic two-peak structure in the near-infrared when the material passes from the metal to the insulator phase. Dynamical mean-field theory calculations confirm this two-peak structure, and allow to identify these spectral changes and the associated changes in the electronic structure. We demonstrate that the insulating phase in these compounds and the associated characteristic two-peak structure are due to the combined effect of bond-disproportionation and Mott physics associated with half of the disproportionated sites. We also provide insights into the structure of excited states above the gap.
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Submitted 30 September, 2015;
originally announced September 2015.
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Magneto-transport study of top- and back-gated LaAlO$_3$/SrTiO$_3$ heterostructures
Authors:
W. Liu,
S. Gariglio,
A. F,
D. Li,
M. Boselli,
D. Stornaiuolo,
J. -M. Triscone
Abstract:
We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO$_3$/SrTiO$_3$ heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by swee** top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the…
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We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO$_3$/SrTiO$_3$ heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by swee** top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.
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Submitted 18 May, 2015;
originally announced May 2015.
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Tailoring the electronic transitions of NdNiO_3 films through (111)_pc oriented interfaces
Authors:
S. Catalano,
M. Gibert,
V. Bisogni,
F. He,
R. Sutarto,
M. Viret,
P. Zubko,
R. Scherwitzl,
G. A. Sawatzky,
T. Schmitt,
J. -M. Triscone
Abstract:
Bulk NdNiO_3 and thin films grown along the pseudocubic (001)_pc axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T=200K. Here, we show that for NdNiO3 films deposited on (111)_pc NdGaO_3 the MIT occurs at T=335K and the Néel transition at T=230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries a…
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Bulk NdNiO_3 and thin films grown along the pseudocubic (001)_pc axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T=200K. Here, we show that for NdNiO3 films deposited on (111)_pc NdGaO_3 the MIT occurs at T=335K and the Néel transition at T=230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111)_pc surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates.
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Submitted 4 May, 2015;
originally announced May 2015.
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Spatially resolved ultrafast magnetic dynamics launched at a complex-oxide hetero-interface
Authors:
M. Först,
A. D. Caviglia,
R. Scherwitzl,
R. Mankowsky,
P. Zubko,
V. Khanna,
H. Bromberger,
S. B. Wilkins,
Y. -D. Chuang,
W. S. Lee,
W. F. Schlotter,
J. J. Turner,
G. L. Dakovski,
M. P. Minitti,
J. Robinson,
S. R. Clark,
D. Jaksch,
J. -M. Triscone,
J. P. Hill,
S. S. Dhesi,
A. Cavalleri
Abstract:
Static strain in complex oxide heterostructures has been extensively used to engineer electronic and magnetic properties at equilibrium. In the same spirit, deformations of the crystal lattice with light may be used to achieve functional control across hetero-interfaces dynamically. Here, by exciting large amplitude infrared-active vibrations in a LaAlO3 substrate we induce magnetic order melting…
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Static strain in complex oxide heterostructures has been extensively used to engineer electronic and magnetic properties at equilibrium. In the same spirit, deformations of the crystal lattice with light may be used to achieve functional control across hetero-interfaces dynamically. Here, by exciting large amplitude infrared-active vibrations in a LaAlO3 substrate we induce magnetic order melting in a NdNiO3 film across a hetero-interface. Femtosecond Resonant Soft X-ray Diffraction is used to determine the spatial and temporal evolution of the magnetic disordering. We observe a magnetic melt front that grows from the substrate interface into the film, at a speed that suggests electronically driven propagation. Light control and ultrafast phase front propagation at hetero-interfaces may lead to new opportunities in optomagnetism, for example by driving domain wall motion to transport information across suitably designed devices.
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Submitted 4 May, 2015;
originally announced May 2015.
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Electronic Transitions in Strained SmNiO_3 Thin Films
Authors:
S. Catalano,
M. Gibert,
V. Bisogni,
O. Peil,
F. He,
R. Sutarto,
M. Viret,
P. Zubko,
R. Scherwitzl,
A. Georges,
G. A. Sawatzky,
T. Schmitt,
J. -M. Triscone
Abstract:
Nickelates are known for their metal to insulator transition (MIT) and an unusual magnetic ordering, occurring at T=T_Néel. Here, we investigate thin films of SmNiO_3 subjected to different levels of epitaxial strain. We find that the original bulk behavior (T_Néel<T_MI) is strongly affected by applying compressive strain to the films. For small compressive strains, a regime where T_Néel=T_MI is a…
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Nickelates are known for their metal to insulator transition (MIT) and an unusual magnetic ordering, occurring at T=T_Néel. Here, we investigate thin films of SmNiO_3 subjected to different levels of epitaxial strain. We find that the original bulk behavior (T_Néel<T_MI) is strongly affected by applying compressive strain to the films. For small compressive strains, a regime where T_Néel=T_MI is achieved, the paramagnetic insulating phase characteristic of the bulk compound is suppressed and the MIT becomes 1st order. Further increasing the in-plane compression of the SmNiO_3 lattice leads to the stabilization of a single metallic paramagnetic phase.
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Submitted 20 April, 2015;
originally announced April 2015.
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Giant Oscillating Thermopower at Oxide Interfaces
Authors:
I. Pallecchi,
F. Telesio,
D. Li,
A. Fête,
S. Gariglio,
J. -M. Triscone,
A. Filippetti,
P. Delugas,
V. Fiorentini,
D. Marré
Abstract:
Understanding the nature of charge carriers at the LaAlO3/SrTiO3 interface is one of the major open issues in the full comprehension of the charge confinement phenomenon in oxide heterostructures. Here, we investigate thermopower to study the electronic structure in LaAlO3/SrTiO3 at low temperature as a function of gate field. In particular, under large negative gate voltage, corresponding to the…
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Understanding the nature of charge carriers at the LaAlO3/SrTiO3 interface is one of the major open issues in the full comprehension of the charge confinement phenomenon in oxide heterostructures. Here, we investigate thermopower to study the electronic structure in LaAlO3/SrTiO3 at low temperature as a function of gate field. In particular, under large negative gate voltage, corresponding to the strongly depleted charge density regime, thermopower displays record-high negative values of the order of 10^4 - 10^5 microV/K, oscillating at regular intervals as a function of the gate voltage. The huge thermopower magnitude can be attributed to the phonon-drag contribution, while the oscillations map the progressive depletion and the Fermi level descent across a dense array of localized states lying at the bottom of the Ti 3d conduction band. This study is the first direct evidence of a localized Anderson tail in the two-dimensional (2D) electron liquid at the LaAlO3/SrTiO3 interface.
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Submitted 8 April, 2015;
originally announced April 2015.
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Growth-induced electron mobility enhancement at the LaAlO$_3$/SrTiO$_3$ interface
Authors:
A. Fête,
C. Cancellieri,
D. Li,
D. Stornaiuolo,
A. D. Caviglia,
S. Gariglio,
J. -M. Triscone
Abstract:
We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650°C exhibit the highest low temperature mobility ($\approx 10000 \textrm{ cm}^2/\textrm{Vs}$) and the lowest sheet carrier density ($\approx 5\times 10^{12} \textrm{ cm}^{-2}$). Th…
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We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650°C exhibit the highest low temperature mobility ($\approx 10000 \textrm{ cm}^2/\textrm{Vs}$) and the lowest sheet carrier density ($\approx 5\times 10^{12} \textrm{ cm}^{-2}$). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800-900°C) display carrier densities in the range of $\approx 2-5 \times 10^{13} \textrm{ cm}^{-2}$ and mobilities of $\approx 1000 \textrm{ cm}^2/\textrm{Vs}$ at 4K. Reducing their carrier density by field effect to $8\times 10^{12} \textrm{ cm}^{-2}$ lowers their mobilites to $\approx 50 \textrm{ cm}^2/\textrm{Vs}$ bringing the conductance to the weak-localization regime.
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Submitted 19 March, 2015;
originally announced March 2015.
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Weak-localization and spin-orbit interaction in side-gate field effect devices at the LaAlO$_3$/SrTiO$_3$ interface
Authors:
D. Stornaiuolo,
S. Gariglio,
A. Fête,
M. Gabay,
D. Li,
D. Massarotti,
J. -M. Triscone
Abstract:
Using field effect devices with side gates, we modulate the 2 dimensional electron gas hosted at the LaAlO$_3$/SrTiO$_3$ interface to study the temperature and do** evolution of the magnetotransport. The analysis of the data reveals different transport regimes depending on the interplay between the different (elastic, inelastic, and spin-orbit) scattering times and their temperature dependencies…
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Using field effect devices with side gates, we modulate the 2 dimensional electron gas hosted at the LaAlO$_3$/SrTiO$_3$ interface to study the temperature and do** evolution of the magnetotransport. The analysis of the data reveals different transport regimes depending on the interplay between the different (elastic, inelastic, and spin-orbit) scattering times and their temperature dependencies. We find that the spin-orbit interaction strongly affects the low temperature transport in the normal state in a very large region of the phase diagram, extending beyond the superconducting dome.
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Submitted 19 March, 2015;
originally announced March 2015.
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Large modulation of the Shubnikov-de Haas oscillations by the Rashba interaction at the LaAlO$_{3}$/SrTiO$_{3}$ interface
Authors:
A. Fête,
S. Gariglio,
C. Berthod,
D. Li,
D. Stornaiuolo,
M. Gabay,
J. -M. Triscone
Abstract:
We investigate the 2-dimensional Fermi surface of high-mobility LaAlO$_3$/SrTiO$_3$ interfaces using Shubnikov-de Haas oscillations. Our analysis of the oscillation pattern underscores the key role played by the Rashba spin-orbit interaction brought about by the breaking of inversion symmetry, as well as the dominant contribution of the heavy $d_{xz}$/$d_{yz}$ orbitals on electrical transport. We…
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We investigate the 2-dimensional Fermi surface of high-mobility LaAlO$_3$/SrTiO$_3$ interfaces using Shubnikov-de Haas oscillations. Our analysis of the oscillation pattern underscores the key role played by the Rashba spin-orbit interaction brought about by the breaking of inversion symmetry, as well as the dominant contribution of the heavy $d_{xz}$/$d_{yz}$ orbitals on electrical transport. We furthermore bring into light the complex evolution of the oscillations with the carrier density, which is tuned by the field effect.
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Submitted 21 November, 2014; v1 submitted 18 July, 2014;
originally announced July 2014.
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In-plane electronic confinement in superconducting LaAlO$_3$/SrTiO$_3$ nanostructures
Authors:
D. Stornaiuolo,
S. Gariglio,
N. J. G. Couto,
A. Fete,
A. D. Caviglia,
G. Seyfarth,
D. Jaccard,
A. F. Morpurgo,
J. -M. Triscone
Abstract:
We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconduc…
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We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconducting behavior tunable by electric field effect. In the normal state, we measured universal conductance fluctuations, signature of phase-coherent transport in small structures. The achievement of reliable lateral confinement of the 2DEG opens the way to the realization of quantum electronic devices at the LaAlO$_3$/SrTiO$_3$ interface.
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Submitted 6 June, 2013;
originally announced June 2013.
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Unusual temperature dependence of the spectral weight near the Fermi level of NdNiO3 thin films
Authors:
E. F. Schwier,
R. Scherwitzl,
Z. Vydrova,
M.,
Garcia-Fernandez,
M. Gibert,
P. Zubko,
M. G. Garnier,
J. -M. Triscone,
P. Aebi
Abstract:
We investigate the behavior of the spectral weight near the Fermi level of NdNiO3 thin films as a function of temperature across the metal-to-insulator transition (MIT) by means of ultraviolet photoelectron spectroscopy. The spectral weight was found to exhibit thermal hysteresis, similar to that of the dc conductivity. A detailed analysis of the temperature dependence reveals two distinct regimes…
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We investigate the behavior of the spectral weight near the Fermi level of NdNiO3 thin films as a function of temperature across the metal-to-insulator transition (MIT) by means of ultraviolet photoelectron spectroscopy. The spectral weight was found to exhibit thermal hysteresis, similar to that of the dc conductivity. A detailed analysis of the temperature dependence reveals two distinct regimes of spectral loss close to the Fermi level. The temperature evolution of one regime is found to be independent from the MIT.
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Submitted 20 November, 2012;
originally announced November 2012.
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Rashba induced magnetoconductance oscillations in the LaAlO3-SrTiO3 heterostructure
Authors:
A. Fête,
S. Gariglio,
A. D. Caviglia,
J. -M. Triscone,
M. Gabay
Abstract:
We report measurements of the normal state in-plane magnetoconductance in gated LaAlO$_3$-SrTiO$_3$ samples. As the orientation of the magnetic field changes within the plane of the interface, the signal displays periodic oscillations with respect to the angle between the field and the direction of the current. We show that in the underdoped to optimally doped range, a Fermi surface reconstruction…
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We report measurements of the normal state in-plane magnetoconductance in gated LaAlO$_3$-SrTiO$_3$ samples. As the orientation of the magnetic field changes within the plane of the interface, the signal displays periodic oscillations with respect to the angle between the field and the direction of the current. We show that in the underdoped to optimally doped range, a Fermi surface reconstruction takes place due to the Rashba spin-orbit term and that the oscillations are due to a magnetic field induced opening and closing of a gap at the $Γ$ point for those Ti out-of-plane orbitals having their band minimum close to the Fermi energy of the system.
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Submitted 13 July, 2012; v1 submitted 23 March, 2012;
originally announced March 2012.
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Intrinsic origin of the two-dimensional electron gas at polar oxide interfaces
Authors:
M. L. Reinle-Schmitt,
C. Cancellieri,
D. Li,
D. Fontaine,
M. Medarde,
E. Pomjakushina,
C. W. Schneider,
S. Gariglio,
Ph. Ghosez,
J. -M. Triscone,
P. R. Willmott
Abstract:
The predictions of the polar catastrophe scenario to explain the occurrence of a metallic interface in heterostructures of the solid solution(LaAlO$_3$)$_{x}$(SrTiO$_3$)$_{1-x}$ (LASTO:x) grown on (001) SrTiO$_3$ were investigated as a function of film thickness and $x$. The films are insulating for the thinnest layers, but above a critical thickness, $t_c$, the interface exhibits a constant finit…
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The predictions of the polar catastrophe scenario to explain the occurrence of a metallic interface in heterostructures of the solid solution(LaAlO$_3$)$_{x}$(SrTiO$_3$)$_{1-x}$ (LASTO:x) grown on (001) SrTiO$_3$ were investigated as a function of film thickness and $x$. The films are insulating for the thinnest layers, but above a critical thickness, $t_c$, the interface exhibits a constant finite conductivity which depends in a predictable manner on $x$. It is shown that $t_c$ scales with the strength of the built-in electric field of the polar material, and is immediately understandable in terms of an electronic reconstruction at the nonpolar-polar interface. These results thus conclusively identify the polar-catastrophe model as the intrinsic origin of the do** at this polar oxide interface.
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Submitted 15 December, 2011;
originally announced December 2011.
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Ultrafast strain engineering in complex oxide heterostructures
Authors:
A. D. Caviglia,
R. Scherwitzl,
P. Popovich,
W. Hu,
H. Bromberger,
R. Singla,
M. Mitrano,
M. C. Hoffmann,
S. Kaiser,
P. Zubko,
S. Gariglio,
J. -M. Triscone,
M. Först,
A. Cavalleri
Abstract:
We report on ultrafast optical experiments in which femtosecond mid-infrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO3 epitaxial thin films is observed as a structural distortion propagates across the interfa…
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We report on ultrafast optical experiments in which femtosecond mid-infrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO3 epitaxial thin films is observed as a structural distortion propagates across the interface. Vibrational excitation, extended here to a wide class of heterostructures and interfaces, may be conducive to new strategies for electronic phase control at THz repetition rates.
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Submitted 14 November, 2011;
originally announced November 2011.
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Metal-insulator transition in ultrathin LaNiO3 films
Authors:
R. Scherwitzl,
S. Gariglio,
M. Gabay,
P. Zubko,
M. Gibert,
J. -M. Triscone
Abstract:
Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly localized character as the film's thickness is reduced and the sheet resistance reaches a value close to h/e2, the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low- temperature conductivity are observed; they are accurately described by weak localization theory. Rem…
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Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly localized character as the film's thickness is reduced and the sheet resistance reaches a value close to h/e2, the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low- temperature conductivity are observed; they are accurately described by weak localization theory. Remarkably, the negative magnetoresistance in this regime is isotropic, which points to magnetic scattering associated with the proximity of the system to either a spin glass state or the charge ordered antiferromagnetic state observed in other rare earth nickelates.
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Submitted 9 June, 2011; v1 submitted 26 January, 2011;
originally announced January 2011.
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Two-dimensional quantum oscillations of the conductance at LaAlO3/SrTiO3 interfaces
Authors:
A. D. Caviglia,
S. Gariglio,
C. Cancellieri,
B. Sacépé,
A. Fête,
N. Reyren,
M. Gabay,
A. F. Morpurgo,
J. -M. Triscone
Abstract:
We report on a study of magnetotransport in LaAlO3/SrTiO3 interfaces characterized by mobilities of the order of several thousands cm$^{2}$/Vs. We observe Shubnikov-de Haas oscillations that indicate a two-dimensional character of the Fermi surface. The frequency of the oscillations signals a multiple sub-bands occupation in the quantum well or a multiple valley configuration. From the temperature…
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We report on a study of magnetotransport in LaAlO3/SrTiO3 interfaces characterized by mobilities of the order of several thousands cm$^{2}$/Vs. We observe Shubnikov-de Haas oscillations that indicate a two-dimensional character of the Fermi surface. The frequency of the oscillations signals a multiple sub-bands occupation in the quantum well or a multiple valley configuration. From the temperature dependence of the oscillation amplitude we extract an effective carrier mass $m^{*}\simeq1.45$\,$m_{e}$. An electric field applied in the back-gate geometry increases the mobility, the carrier density and the oscillation frequency.
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Submitted 28 July, 2010;
originally announced July 2010.
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Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces
Authors:
R. Jany,
M. Breitschaft,
G. Hammerl,
A. Horsche,
C. Richter,
S. Paetel,
J. Mannhart,
N. Stucki,
N. Reyren,
S. Gariglio,
P. Zubko,
A. D. Caviglia,
J. -M. Triscone
Abstract:
Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.
Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.
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Submitted 6 May, 2010;
originally announced May 2010.
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Seebeck effect in the conducting LaAlO_{3}/SrTiO_{3} interface
Authors:
I. Pallecchi,
M. Codda,
E. Galleani d'Agliano,
D. Marre',
A. D. Caviglia,
N. Reyren,
S. Gariglio,
J. -M. Triscone
Abstract:
The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the conducting system. In order to address this issue, we measure electrical transport (Seebeck effect, Hall effect and conductivity) in LaAlO_{3}/SrTiO_{3} interf…
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The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the conducting system. In order to address this issue, we measure electrical transport (Seebeck effect, Hall effect and conductivity) in LaAlO_{3}/SrTiO_{3} interfaces and, for comparison, in a doped SrTiO_{3} bulk single crystal. In these experiments, the carrier concentration is tuned, using the field effect in a back gate geometry. The combined analysis of all experimental data at 77 K indicates that the thickness of the conducting layer is ~7 nm and that the Seebeck effect data are well described by a two-dimensional (2D) density of states. We find that the back gate voltage is effective in varying not only the charge density, but also the thickness of the conducting layer, which is found to change by a factor of ~2, using an electric field between -4 and +4MV/m at 77K. No enhancement of the Seebeck effect due to the electronic confinement and no evidence for two-dimensional quantization steps are observed at the interfaces.
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Submitted 9 February, 2010;
originally announced February 2010.
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Tunable Rashba spin-orbit interaction at oxide interfaces
Authors:
A. D. Caviglia,
M. Gabay,
S. Gariglio,
N. Reyren,
C. Cancellieri,
J. -M. Triscone
Abstract:
The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new example of an electronic property arising from the interfacial breaking of inversion symmetry, namely a large Rashba spin-orbit interaction, whose magnitude ca…
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The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new example of an electronic property arising from the interfacial breaking of inversion symmetry, namely a large Rashba spin-orbit interaction, whose magnitude can be modulated by the application of an external electric field. By means of magnetotransport experiments we explore the evolution of the spin-orbit coupling across the phase diagram of the system. We uncover a steep rise in Rashba interaction occurring around the do** level where a quantum critical point separates the insulating and superconducting ground states of the system.
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Submitted 18 December, 2009;
originally announced December 2009.
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Shear effects in lateral piezoresponse force microscopy at 180$^\circ$ ferroelectric domain walls
Authors:
J. Guyonnet,
H. Bea,
F. Guy,
S. Gariglio,
S. Fusil,
K. Bouzehouane,
J. -M. Triscone,
P. Paruch
Abstract:
In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^\circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the $d_{33}$ piezoelectric coefficient through the domain wall, in agreem…
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In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^\circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the $d_{33}$ piezoelectric coefficient through the domain wall, in agreement with theoretical predictions. We show that in monoclinically distorted tetragonal BiFeO$_3$ films, this effect is superimposed on the lateral piezoresponse due to actual in-plane polarization, and has to be taken into account in order to correctly interpret the ferroelectric domain configuration.
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Submitted 2 September, 2010; v1 submitted 27 July, 2009;
originally announced July 2009.
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Electrostatically tuned quantum superconductor-metal-insulator transition at the LaAlO3/SrTiO3 interface
Authors:
T. Schneider,
A. D. Caviglia,
S. Gariglio,
N. Reyren,
2,
J. -M. Triscone
Abstract:
Recently superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect to an unprecedented range of transition temperatures. Here we perform a detailed finite size scaling analysis to explore the compatibility of the phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-quantum phase(QP)-transition. In an in…
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Recently superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect to an unprecedented range of transition temperatures. Here we perform a detailed finite size scaling analysis to explore the compatibility of the phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-quantum phase(QP)-transition. In an intermediate regime, limited by a gate voltage dependent limiting length, we uncover remarkable consistency with a BKT-critical line ending at a metallic quantum critical point, separating a weakly localized insulator from the superconducting phase. Our estimates for the critical exponents of the 2D-QP-transition, z=1 and nu=0.66, suggest that it belongs to the 3D-xy universality class.
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Submitted 16 April, 2009;
originally announced April 2009.
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Superconductor - Normal and Quantum Superconductor-Insulator Transition at the LaAlO3/SrTiO3Interface
Authors:
T. Schneider,
A. D. Caviglia,
S. Gariglio,
N. Reyren,
D. Jaccard,
J. -M. Triscone
Abstract:
Superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect. The data provide evidence for a two dimensional quantum superconductor to insulator (2D-QSI) transition. Here we explore the compatibility of this phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-QSI transition. In an intermediate regime, li…
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Superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect. The data provide evidence for a two dimensional quantum superconductor to insulator (2D-QSI) transition. Here we explore the compatibility of this phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-QSI transition. In an intermediate regime, limited by a finite size effect, we uncover remarkable consistency with BKT- criticality, weak localization in the insulating state and non-Drude behavior in the normal state. Our estimates for the critical exponents of the 2D-QSI-transition, z =1 and nu=3, suggest that it belongs to the 3D-xy universality class.
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Submitted 4 July, 2008;
originally announced July 2008.
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Electric Field Control of the LaAlO$_{3}$/SrTiO$_{3}$ Interface Ground State
Authors:
A. D. Caviglia,
S. Gariglio,
N. Reyren,
D. Jaccard,
T. Schneider,
M. Gabay,
S. Thiel,
G. Hammerl,
J. Mannhart,
J. -M. Triscone
Abstract:
Interfaces between complex oxides are emerging as one of the most interesting playgrounds in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of novel electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the carrier density in determining the systems ground states. A p…
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Interfaces between complex oxides are emerging as one of the most interesting playgrounds in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of novel electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the carrier density in determining the systems ground states. A particularly fascinating system is the interface between the insulators LaAlO$_{3}$ and SrTiO$_{3}$, which displays conductivity with high mobility. Recently two possible ground states have been experimentally identified: a magnetic state and a two dimensional (2D) superconducting condensate. In this Letter we use the electric field effect to explore the phase diagram of the system. The electrostatic tuning of the carrier density allows an on/off switching of superconductivity and drives a quantum phase transition (QPT) between a 2D superconducting state and an insulating state (2D-QSI). Analyses of the magnetotransport properties in the insulating state are consistent with weak localisation and do not provide evidence for magnetism. The electric field control of superconductivity demonstrated here opens the way to the development of novel mesoscopic superconducting circuits
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Submitted 3 July, 2008;
originally announced July 2008.
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Electric field effect modulation of transition temperature, mobile carrier density and in-plane penetration depth in NdBa2Cu3O(7-delta) thin films
Authors:
D. Matthey,
N. Reyren,
T. Schneider,
J. -M. Triscone
Abstract:
We explore the relationship between the critical temperature, T_c, the mobile areal carrier density, n_2D, and the zero temperature magnetic in-plane penetration depth, lambda_ab(0), in very thin underdoped NdBa2Cu3O{7-delta} films near the superconductor to insulator transition using the electric field effect technique. We observe that T_c depends linearly on both, n_2D and lambda_ab(0), the si…
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We explore the relationship between the critical temperature, T_c, the mobile areal carrier density, n_2D, and the zero temperature magnetic in-plane penetration depth, lambda_ab(0), in very thin underdoped NdBa2Cu3O{7-delta} films near the superconductor to insulator transition using the electric field effect technique. We observe that T_c depends linearly on both, n_2D and lambda_ab(0), the signature of a quantum superconductor to insulator (QSI) transition in two dimensions with znu-bar where z is the dynamic and nu-bar the critical exponent of the in-plane correlation length.
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Submitted 29 September, 2006; v1 submitted 3 March, 2006;
originally announced March 2006.
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Direct evidence for ferroelectric polar distortion in ultrathin lead titanate perovskite films
Authors:
L. Despont,
C. Lichtensteiger,
C. Koitzsch,
C. Clerc,
M. G. Garnier,
F. J. Garcia de Abajo,
E. Bousquet,
Ph. Ghosez,
J. -M. Triscone,
P. Aebi
Abstract:
X-ray photoelectron diffraction is used to directly probe the intra-cell polar atomic distortion and tetragonality associated with ferroelectricity in ultrathin epitaxial PbTiO3 films. Our measurements, combined with ab-initio calculations, unambiguously demonstrate non-centro-symmetry in films a few unit cells thick, imply that films as thin as 3 unit cells still preserve a ferroelectric polar…
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X-ray photoelectron diffraction is used to directly probe the intra-cell polar atomic distortion and tetragonality associated with ferroelectricity in ultrathin epitaxial PbTiO3 films. Our measurements, combined with ab-initio calculations, unambiguously demonstrate non-centro-symmetry in films a few unit cells thick, imply that films as thin as 3 unit cells still preserve a ferroelectric polar distortion, and also show that there is no thick paraelectric dead layer at the surface.
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Submitted 3 November, 2005;
originally announced November 2005.
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Epitaxial growth and transport properties of Nb-doped SrTiO$_{3}$ thin films
Authors:
K. S. Takahashi,
D. Jaccard,
K. Shibuya,
T. Ohnishi,
M. Lippmaa,
J. -M. Triscone
Abstract:
Nb-doped SrTiO$_{3}$ epitaxial thin films have been prepared on (001) SrTiO$_{3}$ substrates using pulsed laser deposition. A high substrate temperature ($>1000^{\circ}{C}$) was found to be necessary to achieve 2-dimensional growth. Atomic force microscopy reveals atomically flat surfaces with 3.9 Å$ $ steps. The films show a metallic behavior, residual resistivity ratios between 10 and 100, and…
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Nb-doped SrTiO$_{3}$ epitaxial thin films have been prepared on (001) SrTiO$_{3}$ substrates using pulsed laser deposition. A high substrate temperature ($>1000^{\circ}{C}$) was found to be necessary to achieve 2-dimensional growth. Atomic force microscopy reveals atomically flat surfaces with 3.9 Å$ $ steps. The films show a metallic behavior, residual resistivity ratios between 10 and 100, and low residual resistivity of the order of 10$^{-4}$$Ω$cm. At 0.3 K, a sharp superconducting transition, reaching zero resistance, is observed.
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Submitted 2 August, 2005;
originally announced August 2005.
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Unusual behaviour of the ferroelectric polarization in PbTiO$_{3}$/SrTiO$_{3}$ superlattices
Authors:
M. Dawber,
C. Lichtensteiger,
M. Cantoni,
M. Veithen,
P. Ghosez,
K. Johnston,
K. M. Rabe,
J. -M. Triscone
Abstract:
Artificial PbTiO$_{3}$/SrTiO$_{3}$ superlattices were constructed using off-axis RF magnetron sputtering. X-ray diffraction and piezoelectric atomic force microscopy were used to study the evolution of the ferroelectric polarization as the ratio of PbTiO$_{3}$ to SrTiO$_{3}$ was changed. For PbTiO$_{3}$ layer thicknesses larger than the 3-unit cells SrTiO$_{3}$ thickness used in the structure, t…
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Artificial PbTiO$_{3}$/SrTiO$_{3}$ superlattices were constructed using off-axis RF magnetron sputtering. X-ray diffraction and piezoelectric atomic force microscopy were used to study the evolution of the ferroelectric polarization as the ratio of PbTiO$_{3}$ to SrTiO$_{3}$ was changed. For PbTiO$_{3}$ layer thicknesses larger than the 3-unit cells SrTiO$_{3}$ thickness used in the structure, the polarization is found to be reduced as the PbTiO$_{3}$ thickness is decreased. This observation confirms the primary role of the depolarization field in the polarization reduction in thin films. For the samples with ratios of PbTiO$_{3}$ to SrTiO$_{3}$ of less than one a surprising recovery of ferroelectricity that cannot be explained by electrostatic considerations was observed.
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Submitted 17 June, 2005;
originally announced June 2005.
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Domain wall roughness in epitaxial ferroelectric PbZr0.2Ti0.8O3 thin films
Authors:
P. Paruch,
T. Giamarchi,
J. -M. Triscone
Abstract:
The static configuration of ferroelectric domain walls was investigated using atomic force microscopy on epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of domain wall roughness reveal a power law growth of the correlation function of relative displacements B(L) ~ L^(2zeta) with zeta ~ 0.26 at short length scales L, followed by an apparent saturation at large L. In the same films, the dynamic…
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The static configuration of ferroelectric domain walls was investigated using atomic force microscopy on epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of domain wall roughness reveal a power law growth of the correlation function of relative displacements B(L) ~ L^(2zeta) with zeta ~ 0.26 at short length scales L, followed by an apparent saturation at large L. In the same films, the dynamic exponent mu was found to be ~ 0.6 from independent measurements of domain wall creep. These results give an effective domain wall dimensionality of d=2.5, in good agreement with theoretical calculations for a two-dimensional elastic interface in the presence of random-bond disorder and long range dipolar interactions.
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Submitted 17 December, 2004;
originally announced December 2004.
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Nanoscale studies of domain wall motion in epitaxial ferroelectric thin films
Authors:
P. Paruch,
T. Giamarchi,
T. Tybell,
J. -M. Triscone
Abstract:
Atomic force microscopy was used to investigate ferroelectric switching and nanoscale domain dynamics in epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of the writing time dependence of domain size reveal a two-step process in which nucleation is followed by radial domain growth. During this growth, the domain wall velocity exhibits a v ~ exp[-(1/E)^mu] dependence on the electric field, chara…
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Atomic force microscopy was used to investigate ferroelectric switching and nanoscale domain dynamics in epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of the writing time dependence of domain size reveal a two-step process in which nucleation is followed by radial domain growth. During this growth, the domain wall velocity exhibits a v ~ exp[-(1/E)^mu] dependence on the electric field, characteristic of a creep process. The domain wall motion was analyzed both in the context of stochastic nucleation in a periodic potential as well as the canonical creep motion of an elastic manifold in a disorder potential. The dimensionality of the films suggests that disorder is at the origin of the observed domain wall creep. To investigate the effects of changing the disorder in the films, defects were introduced during crystal growth (a-axis inclusions) or by heavy ion irradiation, producing films with planar and columnar defects, respectively. The presence of these defects was found to significantly decrease the creep exponent mu, from 0.62 - 0.69 to 0.38 - 0.5 in the irradiated films and 0.19 - 0.31 in the films containing a-axis inclusions.
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Submitted 7 November, 2004;
originally announced November 2004.
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Domain wall creep in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films
Authors:
T. Tybell,
P. Paruch,
T. Giamarchi,
J. -M. Triscone
Abstract:
Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism, in which initial nucleation is followed by radial domain wall motion perpendicular to the polarization direction. The electric field dependence of the domain…
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Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism, in which initial nucleation is followed by radial domain wall motion perpendicular to the polarization direction. The electric field dependence of the domain wall velocity demonstrates that domain wall motion in ferroelectric thin films is a creep process, with the critical exponent mu close to 1. The dimensionality of the films suggests that disorder is at the origin of the observed creep behavior.
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Submitted 19 March, 2002;
originally announced March 2002.
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Hall effect in underdoped GdBa2Cu3O7-d thin films: evidence for a crossover line in the pseudogap regime
Authors:
D. Matthey,
S. Gariglio,
B. Giovannini,
J. -M. Triscone
Abstract:
We report on measurements of the resistivity and Hall coefficient in underdoped GdBa2Cu3O7-d epitaxial thin films grown by off-axis magnetron sputtering. The films have been lithographically patterned allowing precise measurements of the temperature dependencies of the inverse Hall constant RH-1 and of the Hall angle theta_H. We find that RH-1 is linear in temperature between 300K and the pseudo…
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We report on measurements of the resistivity and Hall coefficient in underdoped GdBa2Cu3O7-d epitaxial thin films grown by off-axis magnetron sputtering. The films have been lithographically patterned allowing precise measurements of the temperature dependencies of the inverse Hall constant RH-1 and of the Hall angle theta_H. We find that RH-1 is linear in temperature between 300K and the pseudogap temperature T*, whereas cot(theta_H) displays a perfect T2 temperature dependence between typically 300 and 100K. We observe for all the samples that the temperature at which the temperature dependence of cot(theta_H) deviates from the T2 behavior is correlated to the temperature at which RH displays a peak. This characteristic temperature, found to lie between Tc and T*, does not depend markedly on the do** level and defines a new crossover line in the temperature versus do** phase diagram. We tentatively relate these findings to recent high frequency conductivity and Nernst effect experimental results, and we briefly discuss the possible consequences for competing theories for the pseudogap state of the cuprates.
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Submitted 18 April, 2001;
originally announced April 2001.
