-
Band gap formation in commensurate twisted bilayer graphene/hBN moiré lattices
Authors:
Alexander Rothstein,
Christoph Schattauer,
Robin J. Dolleman,
Stefan Trellenkamp,
Florian Lentz,
Kenji Watanabe,
Takashi Taniguchi,
Dante M. Kennes,
Bernd Beschoten,
Christoph Stampfer,
Florian Libisch
Abstract:
We report on the investigation of periodic superstructures in twisted bilayer graphene (tBLG) van-der-Waals heterostructures, where one of the graphene layers is aligned to hexagonal boron nitride (hBN). Our theoretical simulations reveal that if the ratio of the resulting two moiré unit cell areas is a simple fraction, the graphene/hBN moiré lattice acts as a staggered potential, breaking the deg…
▽ More
We report on the investigation of periodic superstructures in twisted bilayer graphene (tBLG) van-der-Waals heterostructures, where one of the graphene layers is aligned to hexagonal boron nitride (hBN). Our theoretical simulations reveal that if the ratio of the resulting two moiré unit cell areas is a simple fraction, the graphene/hBN moiré lattice acts as a staggered potential, breaking the degeneracy between tBLG AA sites. This leads to additional band gaps at energies where a subset of tBLG AA sites is fully occupied. These gaps manifest as Landau fans in magnetotransport, which we experimentally observe in an aligned tBLG/hBN heterostructure. Our study demonstrates the identification of commensurate tBLG/hBN van-der-Waals heterostructures by magnetotransport, highlights the persistence of moiré effects on length scales of tens of nanometers, and represents an interesting step forward in the ongoing effort to realise designed quantum materials with tailored properties.
△ Less
Submitted 21 March, 2024;
originally announced March 2024.
-
Topological insulator based axial superconducting quantum interferometer structures
Authors:
Erik Zimmermann,
Abdur Rehman Jalil,
Michael Schleenvoigt,
Jan Karthein,
Benedikt Frohn,
Gerrit Behner,
Florian Lentz,
Stefan Trellenkamp,
Elmar Neumann,
Peter Schüffelgen,
Hans Lüth,
Detlev Grützmacher,
Thomas Schäpers
Abstract:
Nanoscale superconducting quantum interference devices (SQUIDs) are fabricated in-situ from a single Bi$_{0.26}$Sb$_{1.74}$Te$_{3}$ nanoribbon that is defined using selective-area growth and contacted with superconducting Nb electrodes via a shadow mask technique. We present $h/(2e)$ magnetic flux periodic interference in both, fully and non-fully proximitized nanoribbons. The pronounced oscillati…
▽ More
Nanoscale superconducting quantum interference devices (SQUIDs) are fabricated in-situ from a single Bi$_{0.26}$Sb$_{1.74}$Te$_{3}$ nanoribbon that is defined using selective-area growth and contacted with superconducting Nb electrodes via a shadow mask technique. We present $h/(2e)$ magnetic flux periodic interference in both, fully and non-fully proximitized nanoribbons. The pronounced oscillations are explained by interference effects of coherent transport through topological surface states surrounding the cross-section of the nanoribbon.
△ Less
Submitted 20 March, 2024;
originally announced March 2024.
-
Two-dimensional photonic crystal cavities in ZnSe quantum well structures
Authors:
Siqi Qiao,
Nils von den Driesch,
Xi Chen,
Stefan Trellenkamp,
Florian Lentz,
Christoph Krause,
Benjamin Bennemann,
Thorsten Brazda,
James M. LeBeau,
Alexander Pawlis
Abstract:
ZnSe and related materials like ZnMgSe and ZnCdSe are promising II-VI host materials for optically mediated quantum information technology such as single photon sources or spin qubits. Integrating these heterostructures into photonic crystal (PC) cavities enables further improvements, for example realizing Purcell-enhanced single photon sources with increased quantum efficiency. Here we report on…
▽ More
ZnSe and related materials like ZnMgSe and ZnCdSe are promising II-VI host materials for optically mediated quantum information technology such as single photon sources or spin qubits. Integrating these heterostructures into photonic crystal (PC) cavities enables further improvements, for example realizing Purcell-enhanced single photon sources with increased quantum efficiency. Here we report on the successful implementation of two-dimensional (2D) PC cavities in strained ZnSe quantum wells (QW) on top of a novel AlAs supporting layer. This approach overcomes typical obstacles associated with PC membrane fabrication in strained materials, such as cracks and strain relaxation in the corresponding devices. We demonstrate the attainment of the required mechanical stability in our PC devices, complete strain retainment and effective vertical optical confinement. Structural analysis of our PC cavities reveals excellent etching anisotropy. Additionally, elemental map** in a scanning transmission electron microscope confirms the transformation of AlAs into AlOx by post-growth wet oxidation and reveals partial oxidation of ZnMgSe at the etched sidewalls in the PC. This knowledge is utilized to tailor FDTD simulations and to extract the ZnMgSe dispersion relation with small oxygen content. Optical characterization of the PC cavities with cross-polarized resonance scattering spectroscopy verifies the presence of cavity modes. The excellent agreement between simulation and measured cavity mode energies demonstrates wide tunability of the PC cavity and proves the pertinence of our model. This implementation of 2D PC cavities in the ZnSe material system establishes a solid foundation for future developments of ZnSe quantum devices.
△ Less
Submitted 23 February, 2024;
originally announced February 2024.
-
Map** of valley-splitting by conveyor-mode spin-coherent electron shuttling
Authors:
Mats Volmer,
Tom Struck,
Arnau Sala,
Bingjie Chen,
Max Oberländer,
Tobias Offermann,
Ran Xue,
Lino Visser,
Jhih-Sian Tu,
Stefan Trellenkamp,
Łukasz Cywiński,
Hendrik Bluhm,
Lars R. Schreiber
Abstract:
In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with high spatial and energy resolution are lacking. Leveraging the spatial control granted by conveyor-mode spin-coherent electron shuttling, we introduce a method fo…
▽ More
In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with high spatial and energy resolution are lacking. Leveraging the spatial control granted by conveyor-mode spin-coherent electron shuttling, we introduce a method for two-dimensional map** of the local valley splitting by detecting magnetic field dependent anticrossings of ground and excited valley states using entangled electron spin-pairs as a probe. The method has sub-μeV energy accuracy and a nanometer lateral resolution. The histogram of valley splittings spanning a large area of 210 nm by 18 nm matches well with statistics obtained by the established but time-consuming magnetospectroscopy method. For the specific heterostructure, we find a nearly Gaussian distribution of valley splittings and a correlation length similar to the quantum dot size. Our map** method may become a valuable tool for engineering Si/SiGe heterostructures for scalable quantum computing.
△ Less
Submitted 29 December, 2023;
originally announced December 2023.
-
Single in situ Interface Characterization Composed of Niobium and a Selectively Grown (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Topological Insulator Nanoribbon
Authors:
Kevin Janßen,
Philipp Rüßmann,
Sergej Liberda,
Michael Schleenvoigt,
Xiao Hou,
Abdur Rehman Jalil,
Florian Lentz,
Stefan Trellenkamp,
Benjamin Bennemann,
Erik Zimmermann,
Gregor Mussler,
Peter Schüffelgen,
Claus-Michael Schneider,
Stefan Blügel,
Detlev Grützmacher,
Lukasz Plucinski,
Thomas Schäpers
Abstract:
With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricate…
▽ More
With increasing attention in Majorana physics for possible quantum bit applications, a large interest has been developed to understand the properties of the interface between a $s$-type superconductor and a topological insulator. Up to this point the interface analysis was mainly focused on in situ prepared Josephson junctions, which consist of two coupled single interfaces or to ex-situ fabricated single interface devices. In our work we utilize a novel fabrication process, combining selective area growth and shadow evaporation which allows the characterization of a single in situ fabricated Nb/$\mathrm{(Bi_{0.15}Sb_{0.85})_2Te_3}$ nano interface. The resulting high interface transparency is apparent by a zero bias conductance increase by a factor of 1.7. Furthermore, we present a comprehensive differential conductance analysis of our single in situ interface for various magnetic fields, temperatures and gate voltages. Additionally, density functional theory calculations of the superconductor/topological insulator interface are performed in order to explain the peak-like shape of our differential conductance spectra and the origin of the observed smearing of conductance features.
△ Less
Submitted 12 December, 2023;
originally announced December 2023.
-
Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
Authors:
Tom Struck,
Mats Volmer,
Lino Visser,
Tobias Offermann,
Ran Xue,
Jhih-Sian Tu,
Stefan Trellenkamp,
Łukasz Cywiński,
Hendrik Bluhm,
Lars R. Schreiber
Abstract:
Long-ranged coherent qubit coupling is a missing function block for scaling up spin qubit based quantum computing solutions. Spin-coherent conveyor-mode electron-shuttling could enable spin quantum-chips with scalable and sparse qubit-architecture. Its key feature is the operation by only few easily tuneable input terminals and compatibility with industrial gate-fabrication. Single electron shuttl…
▽ More
Long-ranged coherent qubit coupling is a missing function block for scaling up spin qubit based quantum computing solutions. Spin-coherent conveyor-mode electron-shuttling could enable spin quantum-chips with scalable and sparse qubit-architecture. Its key feature is the operation by only few easily tuneable input terminals and compatibility with industrial gate-fabrication. Single electron shuttling in conveyor-mode in a 420 nm long quantum bus has been demonstrated previously. Here we investigate the spin coherence during conveyor-mode shuttling by separation and rejoining an Einstein-Podolsky-Rosen (EPR) spin-pair. Compared to previous work we boost the shuttle velocity by a factor of 10000. We observe a rising spin-qubit dephasing time with the longer shuttle distances due to motional narrowing and estimate the spin-shuttle infidelity due to dephasing to be 0.7 % for a total shuttle distance of nominal 560 nm. Shuttling several loops up to an accumulated distance of 3.36 $μ$m, spin-entanglement of the EPR pair is still detectable, giving good perspective for our approach of a shuttle-based scalable quantum computing architecture in silicon.
△ Less
Submitted 10 July, 2023;
originally announced July 2023.
-
Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function
Authors:
Ran Xue,
Max Beer,
Inga Seidler,
Simon Humpohl,
Jhih-Sian Tu,
Stefan Trellenkamp,
Tom Struck,
Hendrik Bluhm,
Lars R. Schreiber
Abstract:
The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrmμ$m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We…
▽ More
The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrmμ$m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 $\mathrmμ$m) is $(99.7 \pm 0.3)\,\%$. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in $^{28}$Si/SiGe, promises spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures.
△ Less
Submitted 28 June, 2023;
originally announced June 2023.
-
Efficient, Spectrally Tunable Single-Photon Sources Based on Chlorine-Doped ZnSe Nanopillars
Authors:
Y. Kutovyi,
M. M. Jansen,
S. Qiao,
C. Falter,
N. von den Driesch,
T. Brazda,
N. Demarina,
S. Trellenkamp,
B. Bennemann,
D. Grützmacher,
A. Pawlis
Abstract:
Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening which makes them promising for the generation of indistinguishable single photons. In this study, we investigate chlorine-doped ZnSe/ZnMgSe quantum well (QW) nanopillar (NP) structures as…
▽ More
Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening which makes them promising for the generation of indistinguishable single photons. In this study, we investigate chlorine-doped ZnSe/ZnMgSe quantum well (QW) nanopillar (NP) structures as a highly efficient solid-state single-photon source operating at cryogenic temperatures. We show that single photons are generated due to the radiative recombination of excitons bound to neutral Cl atoms in ZnSe QW and the energy of the emitted photon can be tuned from about 2.85 down to 2.82 eV with ZnSe well width increase from 2.7 to 4.7 nm. Following the developed advanced technology we fabricate NPs with a diameter of about 250 nm using a combination of dry and wet-chemical etching of epitaxially grown ZnSe/ZnMgSe QW well structures. The remaining resist mask serves as a spherical- or cylindrical-shaped solid immersion lens on top of NPs and leads to the emission intensity enhancement by up to an order of magnitude in comparison to the pillars without any lenses. NPs with spherical-shaped lenses show the highest emission intensity values. The clear photon-antibunching effect is confirmed by the measured value of the second-order correlation function at a zero time delay of 0.14. The developed single-photon sources are suitable for integration into scalable photonic circuits.
△ Less
Submitted 20 May, 2022;
originally announced May 2022.
-
Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture
Authors:
Inga Seidler,
Tom Struck,
Ran Xue,
Niels Focke,
Stefan Trellenkamp,
Hendrik Bluhm,
Lars R. Schreiber
Abstract:
Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttling the qubit carrying electrons between registers is a natural choice for high-fidelity coherent links provided the overhead of control signals stays moderate. Our proof-of-principle demonstrates shuttling of a single el…
▽ More
Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttling the qubit carrying electrons between registers is a natural choice for high-fidelity coherent links provided the overhead of control signals stays moderate. Our proof-of-principle demonstrates shuttling of a single electron by a propagating wave-potential in an electrostatically defined 420 nm long Si/SiGe quantum-channel. This conveyor-mode shuttling approach requires independent from its length only four sinusoidal control signals. We discuss the tuning of the signal parameters, detect the smoothness of the electron motion enabling the map** of potential disorder and observe a high single-electron shuttling fidelity of $99.42\pm0.02\,\%$ including a reversal of direction. Our shuttling device can be readily embedded in industrial fabrication of Si/SiGe qubit chips and paves the way to solving the signal-fanout problem for a fully scalable semiconductor quantum-computing architecture.
△ Less
Submitted 2 August, 2021;
originally announced August 2021.
-
Probing two-electron multiplets in bilayer graphene quantum dots
Authors:
Samuel Möller,
Luca Banszerus,
Angelika Knothe,
Corinne Steiner,
Eike Icking,
Stefan Trellenkamp,
Florian Lentz,
Kenji Watanabe,
Takashi Taniguchi,
Leonid Glazman,
Vladimir Fal'ko,
Christian Volk,
Christoph Stampfer
Abstract:
We report on finite bias spectroscopy measurements of the two-electron spectrum in a gate defined bilayer graphene (BLG) quantum dot for varying magnetic fields. The spin and valley degree of freedom in BLG give rise to multiplets of 6 orbital symmetric and 10 orbital anti-symmetric states. We find that orbital symmetric states are lower in energy and separated by $\approx 0.4 - 0.8$ meV from orbi…
▽ More
We report on finite bias spectroscopy measurements of the two-electron spectrum in a gate defined bilayer graphene (BLG) quantum dot for varying magnetic fields. The spin and valley degree of freedom in BLG give rise to multiplets of 6 orbital symmetric and 10 orbital anti-symmetric states. We find that orbital symmetric states are lower in energy and separated by $\approx 0.4 - 0.8$ meV from orbital anti-symmetric states. The symmetric multiplet exhibits an additional energy splitting of its 6 states of $\approx 0.15 - 0.5$ meV due to lattice scale interactions. The experimental observations are supported by theoretical calculations, which allow to determine that inter-valley scattering and 'current-current' interaction constants are of the same magnitude in BLG.
△ Less
Submitted 10 January, 2022; v1 submitted 15 June, 2021;
originally announced June 2021.
-
Spin-valley coupling in single-electron bilayer graphene quantum dots
Authors:
Luca Banszerus,
Samuel Möller,
Corinne Steiner,
Eike Icking,
Stefan Trellenkamp,
Florian Lentz,
Kenji Watanabe,
Takashi Taniguchi,
Christian Volk,
Christoph Stampfer
Abstract:
Understanding how the electron spin is coupled to orbital degrees of freedom, such as a valley degree of freedom in solid-state systems is central to applications in spin-based electronics and quantum computation. Recent developments in the preparation of electrostatically-confined quantum dots in gapped bilayer graphene (BLG) enables to study the low-energy single-electron spectra in BLG quantum…
▽ More
Understanding how the electron spin is coupled to orbital degrees of freedom, such as a valley degree of freedom in solid-state systems is central to applications in spin-based electronics and quantum computation. Recent developments in the preparation of electrostatically-confined quantum dots in gapped bilayer graphene (BLG) enables to study the low-energy single-electron spectra in BLG quantum dots, which is crucial for potential spin and spin-valley qubit operations. Here, we present the observation of the spin-valley coupling in a bilayer graphene quantum dot in the single-electron regime. By making use of a highly-tunable double quantum dot device we achieve an energy resolution allowing us to resolve the lifting of the fourfold spin and valley degeneracy by a Kane-Mele type spin-orbit coupling of $\approx 65~μ$eV. Also, we find an upper limit of a potentially disorder-induced mixing of the $K$ and $K'$ states below $20~μ$eV.
△ Less
Submitted 19 June, 2021; v1 submitted 8 March, 2021;
originally announced March 2021.
-
Pulsed-gate spectroscopy of single-electron spin states in bilayer graphene quantum dots
Authors:
Luca Banszerus,
Katrin Hecker,
Eike Icking,
Stefan Trellenkamp,
Florian Lentz,
Daniel Neumaier,
Kenji Watanabe,
Takashi Taniguchi,
Christian Volk,
Christoph Stampfer
Abstract:
Graphene and bilayer graphene quantum dots are promising hosts for spin qubits with long coherence times. Although recent technological improvements make it possible to confine single electrons electrostatically in bilayer graphene quantum dots, and their spin and valley texture of the single particle spectrum has been studied in detail, their relaxation dynamics remains still unexplored. Here, we…
▽ More
Graphene and bilayer graphene quantum dots are promising hosts for spin qubits with long coherence times. Although recent technological improvements make it possible to confine single electrons electrostatically in bilayer graphene quantum dots, and their spin and valley texture of the single particle spectrum has been studied in detail, their relaxation dynamics remains still unexplored. Here, we report on transport through a high-frequency gate controlled single-electron bilayer graphene quantum dot. By transient current spectroscopy of single-electron spin states, we extract a lower bound of the spin relaxation time of 0.5~$μ$s. This result represents an important step towards the investigation of spin coherence times in graphene-based quantum dots and the implementation of spin-qubits.
△ Less
Submitted 27 January, 2021; v1 submitted 4 December, 2020;
originally announced December 2020.
-
Electron-hole crossover in gate-controlled bilayer graphene quantum dots
Authors:
Luca Banszerus,
Alexander Rothstein,
Thomas Fabian,
Samuel Möller,
Eike Icking,
Stefan Trellenkamp,
Florian Lentz,
Daniel Neumaier,
Kenji Watanabe,
Takashi Taniguchi,
Florian Libisch,
Christian Volk,
Christoph Stampfer
Abstract:
Electron and hole Bloch states in gapped bilayer graphene exhibit topological orbital magnetic moments with opposite signs near the band edges, which allows for tunable valley-polarization in an out-of-plane magnetic field. This intrinsic property makes electron and hole quantum dots (QDs) in bilayer graphene interesting for valley and spin-valley qubits. Here we show measurements of the electron-…
▽ More
Electron and hole Bloch states in gapped bilayer graphene exhibit topological orbital magnetic moments with opposite signs near the band edges, which allows for tunable valley-polarization in an out-of-plane magnetic field. This intrinsic property makes electron and hole quantum dots (QDs) in bilayer graphene interesting for valley and spin-valley qubits. Here we show measurements of the electron-hole crossover in a bilayer graphene QD, demonstrating the opposite sign of the orbital magnetic moments associated with the Berry curvature. Using three layers of metallic top gates, we independently control the tunneling barriers of the QD while tuning the occupation from the few-hole regime to the few-electron regime, crossing the displacement-field controlled band gap. The band gap is around 25 meV, while the charging energies of the electron and hole dots are between 3-5 meV. The extracted valley g-factor is around 17 and leads to opposite valley polarization for electron and hole states at moderate B-fields. Our measurements agree well with tight-binding calculations for our device.
△ Less
Submitted 19 September, 2020; v1 submitted 6 August, 2020;
originally announced August 2020.
-
Integration of topological insulator Josephson junctions in superconducting qubit circuits
Authors:
Tobias W. Schmitt,
Malcolm R. Connolly,
Michael Schleenvoigt,
Chenlu Liu,
Oscar Kennedy,
José M. Chávez-Garcia,
Abdur R. Jalil,
Benjamin Bennemann,
Stefan Trellenkamp,
Florian Lentz,
Elmar Neumann,
Tobias Lindström,
Sebastian E. de Graaf,
Erwin Berenschot,
Niels Tas,
Gregor Mussler,
Karl D. Petersson,
Detlev Grützmacher,
Peter Schüffelgen
Abstract:
The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we…
▽ More
The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we report on the realization of superconducting transmon qubits implemented with $(Bi_{0.06}Sb_{0.94})_{2}Te_{3}$ topological insulator (TI) JJs using ultra-high vacuum fabrication techniques. Microwave losses on our substrates with monolithically integrated hardmask, used for selective area growth of TI nanostructures, imply microsecond limits to relaxation times and thus their compatibility with strong-coupling cQED. We use the cavity-qubit interaction to show that the Josephson energy of TI-based transmons scales with their JJ dimensions and demonstrate qubit control as well as temporal quantum coherence. Our results pave the way for advanced investigations of topological materials in both novel Josephson and topological qubits.
△ Less
Submitted 18 September, 2021; v1 submitted 8 July, 2020;
originally announced July 2020.
-
Electrostatic detection of Shubnikov-de-Haas oscillations in bilayer graphene by Coulomb resonances in gate-defined quantum dots
Authors:
Luca Banszerus,
Thomas Fabian,
Samuel Möller,
Eike Icking,
Henning Heiming,
Stefan Trellenkamp,
Florian Lentz,
Daniel Neumaier,
Martin Otto,
Kenji Watanabe,
Takashi Taniguchi,
Florian Libisch,
Christian Volk,
Christoph Stampfer
Abstract:
A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel region next to the quantum dot oscillates due to the formation of Landau levels. This is experimentally observed as oscillations in the gate-voltage positions of the…
▽ More
A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel region next to the quantum dot oscillates due to the formation of Landau levels. This is experimentally observed as oscillations in the gate-voltage positions of the Coulomb resonances of the nearby quantum dot. From the frequency of the oscillations, we extract the charge carrier density in the channel and from the amplitude the shift of the quantum dot potential. We compare these experimental results with an electrostatic simulation of the device and find good agreement.
△ Less
Submitted 9 September, 2020; v1 submitted 23 June, 2020;
originally announced June 2020.
-
Signatures of interaction-induced helical gaps in nanowire quantum point contacts
Authors:
S. Heedt,
N. Traverso Ziani,
F. Crépin,
W. Prost,
St. Trellenkamp,
J. Schubert,
D. Grützmacher,
B. Trauzettel,
Th. Schäpers
Abstract:
Spin-momentum locking in a semiconductor device with strong spin-orbit coupling (SOC) is a fundamental goal of nanoscale spintronics and an important prerequisite for the formation of Majorana bound states. Such a helical state is predicted in one-dimensional (1D) nanowires subject to strong Rashba SOC and spin-mixing, its hallmark being a characteristic reentrant behaviour in the conductance. Her…
▽ More
Spin-momentum locking in a semiconductor device with strong spin-orbit coupling (SOC) is a fundamental goal of nanoscale spintronics and an important prerequisite for the formation of Majorana bound states. Such a helical state is predicted in one-dimensional (1D) nanowires subject to strong Rashba SOC and spin-mixing, its hallmark being a characteristic reentrant behaviour in the conductance. Here, we report the first direct experimental observations of the reentrant conductance feature, which reveals the formation of a helical liquid, in the lowest 1D subband of an InAs nanowire. Surprisingly, the feature is very prominent also in the absence of magnetic fields. This behaviour suggests that exchange interaction exhibits substantial impact on transport in our device. We attribute the opening of the pseudogap to spin-flip** two-particle backscattering. The all-electric origin of the ideal helical transport bears momentous implications for topological quantum computing.
△ Less
Submitted 29 January, 2017;
originally announced January 2017.
-
Reducing disorder in graphene nanoribbons by chemical edge modification
Authors:
Jan Dauber,
Bernat Terrés,
Christian Volk,
Stefan Trellenkamp,
Christoph Stampfer
Abstract:
We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrouoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced do** level after HF dip**. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measur…
▽ More
We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrouoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced do** level after HF dip**. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.
△ Less
Submitted 21 November, 2013; v1 submitted 20 November, 2013;
originally announced November 2013.
-
Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields
Authors:
A. Ep**,
S. Engels,
C. Volk,
K. Watanabe,
T. Taniguchi,
S. Trellenkamp,
C. Stampfer
Abstract:
We report on the fabrication and electrical characterisation of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a slight improvement compared to graphene SETs on SiO2. In particular, SETs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T in con…
▽ More
We report on the fabrication and electrical characterisation of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a slight improvement compared to graphene SETs on SiO2. In particular, SETs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T in contrast to measurements reported on SETs on SiO2. This result indicates a reduced surface disorder potential in SETs on hBN which might be an important step towards clean and more controllable graphene QDs.
△ Less
Submitted 19 November, 2013;
originally announced November 2013.
-
Etched graphene quantum dots on hexagonal boron nitride
Authors:
S. Engels,
A. Ep**,
C. Volk,
S. Korte,
B. Voigtländer,
K. Watanabe,
T. Taniguchi,
S. Trellenkamp,
C. Stampfer
Abstract:
We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on Si…
▽ More
We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.
△ Less
Submitted 9 August, 2013;
originally announced August 2013.
-
Transport in coupled graphene-nanotube quantum devices
Authors:
S. Engels,
P. Weber,
B. Terrés,
J. Dauber,
C. Meyer,
C. Volk,
S. Trellenkamp,
U. Wichmann,
C. Stampfer
Abstract:
We report on the fabrication and characterization of all-carbon hybrid quantum devices based on graphene and single-walled carbon nanotubes. We discuss both, carbon nanotube quantum dot devices with graphene charge detectors and nanotube quantum dots with graphene leads. The devices are fabricated by chemical vapor deposition growth of carbon nanotubes and subsequent structuring of mechanically ex…
▽ More
We report on the fabrication and characterization of all-carbon hybrid quantum devices based on graphene and single-walled carbon nanotubes. We discuss both, carbon nanotube quantum dot devices with graphene charge detectors and nanotube quantum dots with graphene leads. The devices are fabricated by chemical vapor deposition growth of carbon nanotubes and subsequent structuring of mechanically exfoliated graphene. We study the detection of individual charging events in the carbon nanotube quantum dot by a nearby graphene nanoribbon and show that they lead to changes of up to 20% of the conductance maxima in the graphene nanoribbon acting as a good performing charge detector. Moreover, we discuss an electrically coupled graphene-nanotube junction, which exhibits a tunneling barrier with tunneling rates in the low GHz regime. This allows to observe Coulomb blockade on a carbon nanotube quantum dot with graphene source and drain leads.
△ Less
Submitted 9 August, 2013; v1 submitted 6 April, 2012;
originally announced April 2012.
-
Charge detection in a bilayer graphene quantum dot
Authors:
Stefan Fringes,
Christian Volk,
Caroline Norda,
Bernat Terrés,
Jan Dauber,
Stephan Engels,
Stefan Trellenkamp,
Christoph Stampfer
Abstract:
We show measurements on a bilayer graphene quantum dot with an integrated charge detector. The focus lies on enabling charge detection with a 30 nm wide bilayer graphene nanoribbon located approximately 35 nm next to a bilayer graphene quantum dot with an island diameter of about 100 nm. Local resonances in the nanoribbon can be successfully used to detect individual charging events in the dot eve…
▽ More
We show measurements on a bilayer graphene quantum dot with an integrated charge detector. The focus lies on enabling charge detection with a 30 nm wide bilayer graphene nanoribbon located approximately 35 nm next to a bilayer graphene quantum dot with an island diameter of about 100 nm. Local resonances in the nanoribbon can be successfully used to detect individual charging events in the dot even in regimes where the quantum dot Coulomb peaks cannot be measured by conventional techniques.
△ Less
Submitted 26 October, 2011;
originally announced October 2011.
-
Tunable capacitive inter-dot coupling in a bilayer graphene double quantum dot
Authors:
Stefan Fringes,
Christian Volk,
Bernat Terrés,
Jan Dauber,
Stephan Engels,
Stefan Trellenkamp,
Christoph Stampfer
Abstract:
We report on a double quantum dot which is formed in a width-modulated etched bilayer graphene nanoribbon. A number of lateral graphene gates enable us to tune the quantum dot energy levels and the tunneling barriers of the device over a wide energy range. Charge stability diagrams and in particular individual triple point pairs allow to study the tunable capacitive inter-dot coupling energy as we…
▽ More
We report on a double quantum dot which is formed in a width-modulated etched bilayer graphene nanoribbon. A number of lateral graphene gates enable us to tune the quantum dot energy levels and the tunneling barriers of the device over a wide energy range. Charge stability diagrams and in particular individual triple point pairs allow to study the tunable capacitive inter-dot coupling energy as well as the spectrum of the electronic excited states on a number of individual triple points. We extract a mutual capacitive inter-dot coupling in the range of 2 - 6 meV and an inter-dot tunnel coupling on the order of 1.5 μeV.
△ Less
Submitted 26 October, 2011;
originally announced October 2011.
-
Comprehensive characterization of an individual carbon nanotube transport device
Authors:
Robert Frielinghaus,
Karin Goß,
Stefan Trellenkamp,
Lothar Houben,
Claus M. Schneider,
Carola Meyer
Abstract:
We present a comprehensive characterization of an individual multiwalled carbon nanotube transport device combining electron microscopy and Raman spectroscopy with electrical measurements. Each method gives complementary information that mutually help to interpret each other. A sample design that allows for combining these investigation methods on individual carbon nanotube devices is introduced.…
▽ More
We present a comprehensive characterization of an individual multiwalled carbon nanotube transport device combining electron microscopy and Raman spectroscopy with electrical measurements. Each method gives complementary information that mutually help to interpret each other. A sample design that allows for combining these investigation methods on individual carbon nanotube devices is introduced. This offers a direct correlation of transport features and shifts of Raman modes with structural properties as e.g. the contact interface and the morphology of the nanotube.
△ Less
Submitted 21 May, 2011;
originally announced May 2011.
-
Electronic Excited States in Bilayer Graphene Double Quantum Dots
Authors:
Christian Volk,
Stefan Fringes,
Bernat Terrés,
Jan Dauber,
Stephan Engels,
Stefan Trellenkamp,
Christoph Stampfer
Abstract:
We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots are around 50 nm and the constrictions acting as tunneling barriers are 30 nm in width. The double quantum dot features addition energies on the order of 20 meV. Charge stability diagrams allow us to study the tunable int…
▽ More
We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots are around 50 nm and the constrictions acting as tunneling barriers are 30 nm in width. The double quantum dot features addition energies on the order of 20 meV. Charge stability diagrams allow us to study the tunable interdot coupling energy as well as the spectrum of the electronic excited states on a number of individual triple points over a large energy range. The obtained constant level spacing of 1.75 meV over a wide energy range is in good agreement with the expected single-particle energy spacing in bilayer graphene quantum dots. Finally, we investigate the evolution of the electronic excited states in a parallel magnetic field.
△ Less
Submitted 18 March, 2013; v1 submitted 10 May, 2011;
originally announced May 2011.
-
Disorder induced Coulomb gaps in graphene constrictions with different aspect ratios
Authors:
B. Terrés,
J. Dauber,
C. Volk,
S. Trellenkamp,
U. Wichmann,
C. Stampfer
Abstract:
We present electron transport measurements on lithographically defined and etched graphene nanoconstrictions with different aspect ratios including different lengths (L) and widths (W). A roughly length-independent disorder induced effective energy gap can be observed around the charge neutrality point. This energy gap scales inversely with the width even in regimes where the length of the constri…
▽ More
We present electron transport measurements on lithographically defined and etched graphene nanoconstrictions with different aspect ratios including different lengths (L) and widths (W). A roughly length-independent disorder induced effective energy gap can be observed around the charge neutrality point. This energy gap scales inversely with the width even in regimes where the length of the constriction is smaller than its width (L<W). In very short constrictions, we observe both resonances due to localized states or charged islands and an elevated overall conductance level (0.1-1e2/h), which is strongly length-dependent in the gap region. This makes very short graphene constrictions interesting for highly transparent graphene tunneling barriers.
△ Less
Submitted 15 February, 2011; v1 submitted 9 November, 2010;
originally announced November 2010.
