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Semiconductor-based electron flying qubits: Review on recent progress accelerated by numerical modelling
Authors:
Hermann Edlbauer,
Junliang Wang,
Thierry Crozes,
Pierre Perrier,
Seddik Ouacel,
Clément Geffroy,
Giorgos Georgiou,
Eleni Chatzikyriakou,
Antonio Lacerda-Santos,
Xavier Waintal,
D. Christian Glattli,
Preden Roulleau,
Jayshankar Nath,
Masaya Kataoka,
Janine Splettstoesser,
Matteo Acciai,
Maria Cecilia da Silva Figueira,
Kemal Öztas,
Alex Trellakis,
Thomas Grange,
Oleg M. Yevtushenko,
Stefan Birner,
Christopher Bäuerle
Abstract:
The progress of charge manipulation in semiconductor-based nanoscale devices opened up a novel route to realise a flying qubit with a single electron. In the present review, we introduce the concept of these electron flying qubits, discuss their most promising realisations and show how numerical simulations are applicable to accelerate experimental development cycles. Addressing the technological…
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The progress of charge manipulation in semiconductor-based nanoscale devices opened up a novel route to realise a flying qubit with a single electron. In the present review, we introduce the concept of these electron flying qubits, discuss their most promising realisations and show how numerical simulations are applicable to accelerate experimental development cycles. Addressing the technological challenges of flying qubits that are currently faced by academia and quantum enterprises, we underline the relevance of interdisciplinary cooperation to move emerging quantum industry forward. The review consists of two main sections:
Pathways towards the electron flying qubit: We address three routes of single-electron transport in GaAs-based devices focusing on surface acoustic waves, hot-electron emission from quantum dot pumps and Levitons. For each approach, we discuss latest experimental results and point out how numerical simulations facilitate engineering the electron flying qubit.
Numerical modelling of quantum devices: We review the full stack of numerical simulations needed for fabrication of the flying qubits. Choosing appropriate models, examples of basic quantum mechanical simulations are explained in detail. We discuss applications of open-source (KWANT) and the commercial (nextnano) platforms for modelling the flying qubits. The discussion points out the large relevance of software tools to design quantum devices tailored for efficient operation.
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Submitted 4 July, 2022;
originally announced July 2022.
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Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach
Authors:
Eleni Chatzikyriakou,
Junliang Wang,
Lucas Mazzella,
Antonio Lacerda-Santos,
Maria Cecilia da Silva Figueira,
Alex Trellakis,
Stefan Birner,
Thomas Grange,
Christopher Bäuerle,
Xavier Waintal
Abstract:
In quantum nanoelectronics, numerical simulations have become an ubiquitous tool. Yet the comparison with experiments is often done at a qualitative level or restricted to a single device with a handful of fitting parameters. In this work, we assess the predictive power of these simulations by comparing the results of a single model with a large experimental data set of 110 devices with 48 differe…
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In quantum nanoelectronics, numerical simulations have become an ubiquitous tool. Yet the comparison with experiments is often done at a qualitative level or restricted to a single device with a handful of fitting parameters. In this work, we assess the predictive power of these simulations by comparing the results of a single model with a large experimental data set of 110 devices with 48 different geometries. The devices are quantum point contacts of various shapes and sizes made with electrostatic gates deposited on top of a high mobility GaAs/GaAlAs two dimensional electron gas. We study the pinch-off voltages applied on the gates to deplete the two-dimensional electron gas in various spatial positions. We argue that the pinch-off voltages are a very robust signature of the charge distribution in the device. The large experimental data set allows us to critically review the modeling and arrive at a robust one-parameter model that can be calibrated in situ, a crucial step for making predictive simulations.
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Submitted 13 November, 2022; v1 submitted 2 May, 2022;
originally announced May 2022.
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Spectral Decorrelation of Nuclear Levels in the Presence of Continuum Decay
Authors:
S. Drożdż,
A. Trellakis,
J. Wambach
Abstract:
The fluctuation properties of nuclear giant resonance spectra are studied in the presence of continuum decay. The subspace of quasi-bound states is specified by one-particle one-hole and two-particle two-hole excitations and the continuum coupling is generated by a scattering ensemble. It is found that, with increasing number of open channels, the real parts of the complex eigenvalues quickly de…
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The fluctuation properties of nuclear giant resonance spectra are studied in the presence of continuum decay. The subspace of quasi-bound states is specified by one-particle one-hole and two-particle two-hole excitations and the continuum coupling is generated by a scattering ensemble. It is found that, with increasing number of open channels, the real parts of the complex eigenvalues quickly decorrelate. This appears to be related to the transition from power-law to exponential time behavior of the survival probability of an initially non-stationary state.
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Submitted 30 November, 1995;
originally announced November 1995.
