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One- and multi-dimensional CWENOZ reconstructions for implementing boundary conditions without ghost cells
Authors:
M. Semplice,
E. Travaglia,
G. Puppo
Abstract:
We address the issue of point value reconstructions from cell averages in the context of third order finite volume schemes, focusing in particular on the cells close to the boundaries of the domain. In fact, most techniques known in the literature rely on the creation of ghost cells outside the boundary and on some form of extrapolation from the inside that, taking into account the boundary condit…
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We address the issue of point value reconstructions from cell averages in the context of third order finite volume schemes, focusing in particular on the cells close to the boundaries of the domain. In fact, most techniques known in the literature rely on the creation of ghost cells outside the boundary and on some form of extrapolation from the inside that, taking into account the boundary conditions, fills the ghost cells with appropriate values, so that a standard reconstruction can be applied also in boundary cells. In (Naumann, Kolb, Semplice, 2018), motivated by the difficulty of choosing appropriate boundary conditions at the internal nodes of a network, a different technique was explored that avoids the use of ghost cells, but instead employs for the boundary cells a different stencil, biased towards the interior of the domain.
In this paper, extending that approach, which does not make use of ghost cells, we propose a more accurate reconstruction for the one-dimensional case and a two-dimensional one for Cartesian grids. In several numerical tests we compare the novel reconstruction with the standard approach using ghost cells.
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Submitted 23 March, 2021;
originally announced March 2021.
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A matrix-theoretic spectral analysis of incompressible Navier-Stokes staggered DG approximation and related solvers
Authors:
Mariarosa Mazza,
Matteo Semplice,
Stefano Serra-Capizzano,
Elena Travaglia
Abstract:
The incompressible Navier-Stokes equations are solved in a channel, using a Discontinuous Galerkin method over staggered grids. The resulting linear systems are studied both in terms of the structure and in terms of the spectral features of the related coefficient matrices. In fact, the resulting matrices are of block type, each block showing Toeplitz-like, band, and tensor structure at the same t…
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The incompressible Navier-Stokes equations are solved in a channel, using a Discontinuous Galerkin method over staggered grids. The resulting linear systems are studied both in terms of the structure and in terms of the spectral features of the related coefficient matrices. In fact, the resulting matrices are of block type, each block showing Toeplitz-like, band, and tensor structure at the same time. Using this rich matrix-theoretic information and the Toeplitz, Generalized Locally Toeplitz technology, a quite complete spectral analysis is presented, with the target of designing and analyzing fast iterative solvers for the associated large linear systems. Quite promising numerical results are presented, commented, and critically discussed for elongated two- and three-dimensional geometries.
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Submitted 22 March, 2021;
originally announced March 2021.
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Electron-phonon coupling in single-layer MoS2
Authors:
Sanjoy K. Mahatha,
Arlette S. Ngankeu,
Nicki Frank Hinsche,
Ingrid Mertig,
Kevin Guilloy,
Peter L. Matzen,
Marco Bianchi,
Charlotte E. Sanders,
Jill A. Miwa,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Luca Bignardi,
Daniel Lizzit,
Rosanna Larciprete,
Alessandro Baraldi,
Silvano Lizzit,
Philip Hofmann
Abstract:
The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $λ$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye mo…
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The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $λ$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye model. The experimental values of $λ$ for the upper and lower spin-split bands at K are found to be 0.05 and 0.32, respectively, in excellent agreement with the calculated values for a free-standing single-layer MoS$_2$. The results are discussed in the context of spin and phase-space restricted scattering channels, as reported earlier for single-layer WS$_2$ on Au(111). The fact that the absolute valence band maximum in single-layer MoS$_2$ at K is almost degenerate with the local valence band maximum at $Γ$ can potentially be used to tune the strength of the electron-phonon interaction in this material.
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Submitted 18 November, 2018;
originally announced November 2018.
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Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)
Authors:
Luca Bignardi,
Daniel Lizzit,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Charlotte E. Sanders,
Maciej Dendzik,
Matteo Michiardi,
Marco Bianchi,
Moritz Ewert,
Lars Buß,
Jens Falta,
Jan Ingo Flege,
Alessandro Baraldi,
Rosanna Larciprete,
Philip Hofmann,
Silvano Lizzit
Abstract:
We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, s…
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We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, size and layer stacking of the WS$_2$ layer were achieved by employing x-ray photoelectron diffraction and low-energy electron microscopy. The strong spin splitting in the valence band of WS$_2$ coupled with the single-orientation character of the layer make this material the ideal candidate for the exploitation of the spin and valley degrees of freedom.
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Submitted 19 September, 2018; v1 submitted 13 June, 2018;
originally announced June 2018.
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Novel single-layer vanadium sulphide phases
Authors:
Fabian Arnold,
Raluca-Maria Stan,
Sanjoy K. Mahatha,
H. E. Lund,
Davide Curcio,
Maciej Dendzik,
Harsh Bana,
Elisabetta Travaglia,
Luca Bignardi,
Paolo Lacovig,
Daniel Lizzit,
Zheshen Li,
Marco Bianchi,
Jill A. Miwa,
Martin Bremholm,
Silvano Lizzit,
Philip Hofmann,
C. E. Sanders
Abstract:
VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new…
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VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new two-dimensional compound that has no bulk analogue. The transition is reversible upon annealing in an H2S gas atmosphere. We report the structural properties of both the stoichiometric and S-depleted compounds on the basis of low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and scanning tunneling microscopy experiments.
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Submitted 21 March, 2018;
originally announced March 2018.
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Epitaxial Growth of Single-Orientation High-Quality MoS$_2$ Monolayers
Authors:
Harsh Bana,
Elisabetta Travaglia,
Luca Bignardi,
Paolo Lacovig,
Charlotte E. Sanders,
Maciej Dendzik,
Matteo Michiardi,
Marco Bianchi,
Daniel Lizzit,
Francesco Presel,
Dario De Angelis,
Nicoleta Apostol,
Pranab Kumar Das,
Jun Fujii,
Ivana Vobornik,
Rosanna Larciprete,
Alessandro Baraldi,
Philip Hofmann,
Silvano Lizzit
Abstract:
We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- a…
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We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- and angle-resolved photoemission experiments performed on the sample revealed complete spin-polarization of the valence band states near the K and -K points of the Brillouin zone. These findings open up the possibility to exploit the spin and valley degrees of freedom for encoding and processing information in devices that are based on epitaxially grown materials.
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Submitted 9 February, 2018; v1 submitted 6 February, 2018;
originally announced February 2018.
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Electron-phonon coupling in the spin-split valence band of single layer WS$_2$
Authors:
Nicki Frank Hinsche,
Arlette S. Ngankeu,
Kevin Guilloy,
Sanjoy K. Mahatha,
Antonija Grubišić Čabo,
Marco Bianchi,
Maciej Dendzik,
Charlotte E. Sanders,
Jill A. Miwa,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Luca Bignardi,
Rosanna Larciprete,
Alessandro Baraldi,
Silvano Lizzit,
Kristian Sommer Thygesen,
Philip Hofmann
Abstract:
The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is stud…
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The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is studied by first principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of $λ_K=$0.0021 and 0.40 for the upper and lower spin-split valence band of the free-standing layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment and the experimental results confirm the strongly branch-dependent coupling strength.
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Submitted 17 June, 2017;
originally announced June 2017.
