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A Platform for Addressing Individual Magnetite Islands Grown Epitaxially on Ru(0001) and Manipulating Their Magnetic Domains
Authors:
Sandra Ruiz-Gómez,
Eva María Trapero,
Claudia Fernández-González,
Adolfo del Campo,
Cecilia Granados-Miralles,
José Emilio Prieto,
Muhammad Waqas Khaliq,
Miguel Angel Niño,
Michael Foerster,
Lucía Aballe,
Juan de la Figuera
Abstract:
We have grown high-quality magnetite micrometric islands on ruthenium stripes on sapphire through a combination of magnetron sputtering (Ru film), high-temperature molecular beam epitaxy (oxide islands), and optical lithography. The samples have been characterized by atomic force microscopy, Raman spectroscopy, X-ray absorption and magnetic circular dichroism in a photoemission microscope. The mag…
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We have grown high-quality magnetite micrometric islands on ruthenium stripes on sapphire through a combination of magnetron sputtering (Ru film), high-temperature molecular beam epitaxy (oxide islands), and optical lithography. The samples have been characterized by atomic force microscopy, Raman spectroscopy, X-ray absorption and magnetic circular dichroism in a photoemission microscope. The magnetic domains on the magnetite islands can be modified by the application of current pulses through the Ru stripes in combination with magnetic fields. The modification of the magnetic domains is explained by the Oersted field generated by the electrical current flowing through the stripes underneath the magnetite nanostructures. The fabrication method is applicable to a wide variety of rock salt and spinel oxides.
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Submitted 24 September, 2023;
originally announced September 2023.
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Size effects in the Verwey transition of nanometer-thick micron-wide magnetite crystals
Authors:
Adolfo del Campo,
Sandra Ruiz-Gómez,
Eva M. Trapero,
Cecilia Granados-Miralles,
Adrián Quesada,
Michael Foerster,
Lucía Aballe,
José Emilio Prieto,
Juan de la Figuera
Abstract:
We have monitored the Verwey transition in micrometer-wide, nanometer-thick magnetite islands on epitaxial Ru films on Al2O3(0001) using Raman spectroscopy. The islands have been grown by high-temperature oxygen-assisted molecular beam epitaxy. Below 100 K and for thicknesses above 20 nm the Raman spectra correspond to those observed in bulk crystals and high quality thin films for the sub-Verwey…
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We have monitored the Verwey transition in micrometer-wide, nanometer-thick magnetite islands on epitaxial Ru films on Al2O3(0001) using Raman spectroscopy. The islands have been grown by high-temperature oxygen-assisted molecular beam epitaxy. Below 100 K and for thicknesses above 20 nm the Raman spectra correspond to those observed in bulk crystals and high quality thin films for the sub-Verwey magnetite structure. At room temperature the width of the cubic phase modes is similar to the best reported in bulk crystals, indicating a similar level of electron-phonon interaction. The evolution of the Raman spectra upon cooling suggests that for islands thicker than 20 nm, structural changes appear first at temperatures starting at 150 K and the Verwey transition itself takes place at around 115 K. However, islands thinner than 20 nm show a very different Raman spectra indicating that while a transition takes place, the charge order of the ultrathin islands differs markedly from their thicker counterparts
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Submitted 6 April, 2022;
originally announced April 2022.
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RBS/Channeling characterization of Ru(0001) and thin epitaxial Ru/Al$_2$O$_3$(0001) films
Authors:
J. E. Prieto,
E. M. Trapero,
P. Prieto,
E. García-Martín,
G. D. Soria,
P. Galán,
J. de la Figuera
Abstract:
Thin epitaxial films of metals on insulating substrates are essential for many applications, as conducting layers, in magnetic devices or as templates for further growth. In this work, we report on the growth of epitaxial Ru films on single-crystalline Al$_2$O$_3$(0001) substrates by magnetron sputtering and their subsequent systematic characterization using Rutherford backscattering spectrometry…
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Thin epitaxial films of metals on insulating substrates are essential for many applications, as conducting layers, in magnetic devices or as templates for further growth. In this work, we report on the growth of epitaxial Ru films on single-crystalline Al$_2$O$_3$(0001) substrates by magnetron sputtering and their subsequent systematic characterization using Rutherford backscattering spectrometry of He ions both in random and in channeling conditions. We include results of a Ru(0001) single crystal for comparison. Analysis of channeling shows that films thicker than 35 nm grow with (0001) orientation, a well-defined epitaxial relation with the substrate and a high degree of crystal quality, comparable to the Ru(0001) single crystal. Thinner films of down to 7 nm in thickness, for which relaxation of epitaxial strain is not complete, produce a similar degree of dechanneling. The surface of the films can be prepared in a clean and ordered state in order to allow further epitaxial growth on top.
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Submitted 14 December, 2021;
originally announced December 2021.
