-
Dirac-like fermions anomalous magneto-transport in a spin-polarized oxide two-dimensional electron system
Authors:
Yu Chen,
Maria D'Antuono,
Mattia Trama,
Daniele Preziosi,
Benoit Jouault,
Frédéric Teppe,
Christophe Consejo,
Carmine A. Perroni,
Roberta Citro,
Daniela Stornaiuolo,
Marco Salluzzo
Abstract:
In two-dimensional electron systems (2DES) the breaking of the inversion, time-reversal and bulk crystal-field symmetries is interlaced with the effects of spin-orbit coupling (SOC) triggering exotic quantum phenomena. Here, we used epitaxial engineering to design and realize a 2DES characterized simultaneously by ferromagnetic order, large Rashba SOC and hexagonal band war** at the (111) interf…
▽ More
In two-dimensional electron systems (2DES) the breaking of the inversion, time-reversal and bulk crystal-field symmetries is interlaced with the effects of spin-orbit coupling (SOC) triggering exotic quantum phenomena. Here, we used epitaxial engineering to design and realize a 2DES characterized simultaneously by ferromagnetic order, large Rashba SOC and hexagonal band war** at the (111) interfaces between LaAlO$_{3}$, EuTiO$_{3}$ and SrTiO$_{3}$ insulators. The 2DES displays anomalous quantum corrections to the magneto-conductance driven by the time-reversal-symmetry breaking occurring below the magnetic transition temperature. The results are explained by the emergence of a non-trivial Berry phase and competing weak anti-localization / weak localization back-scattering of Dirac-like fermions, mimicking the phenomenology of gapped topological insulators. These findings open perspectives for the engineering of novel spin-polarized functional 2DES holding promises in spin-orbitronics and topological electronics.
△ Less
Submitted 20 June, 2024;
originally announced June 2024.
-
Engineered Josephson diode effect in kinked Rashba nanochannels
Authors:
Alfonso Maiellaro,
Mattia Trama,
Jacopo Settino,
Claudio Guarcello,
Francesco Romeo,
Roberta Citro
Abstract:
The superconducting diode effect, reminiscent of the unidirectional charge transport in semiconductor diodes, is characterized by a nonreciprocal, dissipationless flow of Cooper pairs. This remarkable phenomenon arises from the interplay between symmetry constraints and the inherent quantum behavior of superconductors. Here, we explore the geometric control of the diode effect in a kinked nanostri…
▽ More
The superconducting diode effect, reminiscent of the unidirectional charge transport in semiconductor diodes, is characterized by a nonreciprocal, dissipationless flow of Cooper pairs. This remarkable phenomenon arises from the interplay between symmetry constraints and the inherent quantum behavior of superconductors. Here, we explore the geometric control of the diode effect in a kinked nanostrip Josephson junction based on a two-dimensional electron gas (2DEGs) with Rashba spin-orbit interaction. We provide a comprehensive analysis of the diode effect as a function of the kink angle and the out-of-plane magnetic field. Our analysis reveals a rich phase diagram, showcasing a geometry and field-controlled diode effect. The phase diagram also reveals the presence of an anomalous Josephson effect related to the emergence of trivial zero-energy Andreev bound states, which can evolve into Majorana bound states. Our findings indicate that the exceptional synergy between geometric control of the diode effect and topological phases can be effectively leveraged to design and optimize superconducting devices with tailored transport properties.
△ Less
Submitted 27 May, 2024;
originally announced May 2024.
-
Large nonlinear Hall effect and Berry curvature in KTaO3 based two-dimensional electron gas
Authors:
**feng Zhai,
Mattia Trama,
Hao Liu,
Zhifei Zhu,
Yinyan Zhu,
Carmine Antonio Perroni,
Roberta Citro,
Pan He,
Jian Shen
Abstract:
The two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion symmetry breaking. In this work, we report the emergence of large nonlinear Hall effects (NHE) in the LaAlO3/KTaO3(111) interface 2DEG under zero magnetic field. Skew scattering was identified as the dominant origin based on the cubic scaling of nonlinear Hall conducti…
▽ More
The two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion symmetry breaking. In this work, we report the emergence of large nonlinear Hall effects (NHE) in the LaAlO3/KTaO3(111) interface 2DEG under zero magnetic field. Skew scattering was identified as the dominant origin based on the cubic scaling of nonlinear Hall conductivity with longitudinal conductivity and the threefold symmetry. Moreover, a gate-tunable NHE with pronounced peak and dip was observed and reproduced by our theoretical calculation. These results indicate the presence of Berry curvature hotspots and thus a large Berry curvature triple at the oxide interface. Our theoretical calculations confirm the existence of large Berry curvatures from the avoided crossing of multiple 5d-orbit bands, orders of magnitude larger than that in transition-metal dichalcogenides. NHE offers a new pathway to probe the Berry curvature at oxide interfaces, and facilitates new applications in oxide nonlinear electronics.
△ Less
Submitted 9 December, 2023;
originally announced December 2023.
-
Effect of confinement and Coulomb interactions on the electronic structure of (111) LaAlO$_3$/SrTiO$_3$ interface
Authors:
Mattia Trama,
Vittorio Cataudella,
Carmine Antonio Perroni,
Francesco Romeo,
Roberta Citro
Abstract:
A tight binding supercell approach is used for the calculation of the electronic structure of the (111) LaAlO$_3$/SrTiO$_3$ interface. The confinement potential at the interface is evaluated solving a discrete Poisson equation by means of an iterative method. In addition to the effect of the confinement, local Hubbard electron-electron terms are included at mean-field level within a fully self-con…
▽ More
A tight binding supercell approach is used for the calculation of the electronic structure of the (111) LaAlO$_3$/SrTiO$_3$ interface. The confinement potential at the interface is evaluated solving a discrete Poisson equation by means of an iterative method. In addition to the effect of the confinement, local Hubbard electron-electron terms are included at mean-field level within a fully self-consistent procedure. The calculation carefully describes how the two-dimensional electron gas arises from the quantum confinement of electrons near the interface due to band bending potential. The resulting electronic sub-bands and Fermi surfaces show full agreement with the electronic structure determined by angle-resolved photoelectron spectroscopy experiments. In particular, it is analyzed how the effect of local Hubbard interactions changes the density distribution over the layers from the interface to the bulk. Interestingly, the two-dimensional electron gas at interface is not depleted by local Hubbard interactions which indeed induce an enhancement of the electron density between the first layers and the bulk.
△ Less
Submitted 22 February, 2023; v1 submitted 20 February, 2023;
originally announced February 2023.
-
Tunable spin and orbital Edelstein effect at (111) LaAlO$_3$/SrTiO$_3$ interface
Authors:
Mattia Trama,
Vittorio Cataudella,
Carmine Antonio Perroni,
Francesco Romeo,
Roberta Citro
Abstract:
Converting charge current into spin current is one of the main mechanisms exploited in spintronics. One prominent example is the Edelstein effect, namely the generation of a magnetization in response to an external electric field, which can be realized in systems with lack of inversion symmetry. If a system has electrons with an orbital angular momentum character, an orbital magnetization can be g…
▽ More
Converting charge current into spin current is one of the main mechanisms exploited in spintronics. One prominent example is the Edelstein effect, namely the generation of a magnetization in response to an external electric field, which can be realized in systems with lack of inversion symmetry. If a system has electrons with an orbital angular momentum character, an orbital magnetization can be generated by the applied electric field giving rise to the so-called orbital Edelstein effect. Oxide heterostructures are the ideal platform for these effects due to the strong spin-orbit coupling and the lack of inversion symmetries. Beyond a gate-tunable spin Edelstein effect, we predict an orbital Edelstein effect an order of magnitude larger then the spin one at the (111) LaAlO$_3$/SrTiO$_3$ interface. We model the material as a bilayer of $t_{2g}$ orbitals using a tight-binding approach, while transport properties are obtained in the Boltzmann approach. We give an effective model at low filling which explains the non-trivial behaviour of the Edelstein response, showing that the hybridization between the electronic bands crucially impacts the Edelstein susceptibility.
△ Less
Submitted 15 July, 2022;
originally announced July 2022.
-
Gate tunable anomalous Hall effect at (111) LaAlO$_3$/SrTiO$_3$ interface
Authors:
Mattia Trama,
Carmine Antonio Perroni,
Vittorio Cataudella,
Francesco Romeo,
Roberta Citro
Abstract:
We present the theoretical prediction of a gate tunable anomalous Hall effect (AHE) in an oxide interface as a hallmark of spin-orbit coupling. The observed AHE at low-temperatures in the presence of an external magnetic field emerges from a complex structure of the Berry curvature of the electrons on the Fermi surface and strongly depends on the orbital character of the occupied bands. A detailed…
▽ More
We present the theoretical prediction of a gate tunable anomalous Hall effect (AHE) in an oxide interface as a hallmark of spin-orbit coupling. The observed AHE at low-temperatures in the presence of an external magnetic field emerges from a complex structure of the Berry curvature of the electrons on the Fermi surface and strongly depends on the orbital character of the occupied bands. A detailed picture of the results comes from a multiband low-energy model with a generalized Rashba interaction that supports characteristic out-of-plane spin and orbital textures. We discuss strategies for optimizing the intrinsic AHE in (111) SrTiO$_3$ heterostructure interfaces.
△ Less
Submitted 9 February, 2022;
originally announced February 2022.
-
Strain-induced topological phase transition at (111) SrTiO$_3$-based heterostructures
Authors:
Mattia Trama,
Carmine Antonio Perroni,
Vittorio Cataudella
Abstract:
The quasi-two-dimensional electronic gas at the (111) SrTiO$_3$-based heterostructure interfaces is described by a multi-band tight-binding model providing electronic bands in agreement at low energies with photoemission experiments. We analyze both the roles of the spin-orbit coupling and of the trigonal crystal field effects. We point out the presence of a regime with sizable strain where the ba…
▽ More
The quasi-two-dimensional electronic gas at the (111) SrTiO$_3$-based heterostructure interfaces is described by a multi-band tight-binding model providing electronic bands in agreement at low energies with photoemission experiments. We analyze both the roles of the spin-orbit coupling and of the trigonal crystal field effects. We point out the presence of a regime with sizable strain where the band structure exhibits a Dirac cone whose features are consistent with \textit{ab-initio} approaches. The combined effect of spin-orbit coupling and trigonal strain gives rise to non-trivial spin and orbital angular momenta patterns in the Brillouin zone and to quantum spin Hall effect by opening a gap at the Dirac cone. The system can switch from a conducting to a topological insulating state \textit{via} modification of trigonal strain within a parameter range which is estimated to be experimentally achievable.
△ Less
Submitted 23 September, 2021;
originally announced September 2021.
