-
Low Thermal Budget High-k/Metal Surface Gate for Buried Donor-Based Devices
Authors:
Evan M. Anderson,
DeAnna M. Campbell,
Leon N. Maurer,
Andrew D. Baczewski,
Michael T. Marshall,
Tzu-Ming Lu,
** Lu,
Lisa A. Tracy,
Scott W. Schmucker,
Daniel R. Ward,
Shashank Misra
Abstract:
Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the invest…
▽ More
Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the investigation of alternative fabrication paths that extend to the atomic scale. APAM donor devices can be created using a scanning tunneling microscope (STM). However, these devices are not currently compatible with industry standard fabrication processes. There exists a tradeoff between low thermal budget (LT) processes to limit dopant diffusion and high thermal budget (HT) processes to grow defect-free layers of epitaxial Si and gate oxide. To this end, we have developed an LT epitaxial Si cap and LT deposited Al2O3 gate oxide integrated with an atomically precise single-electron transistor (SET) that we use as an electrometer to characterize the quality of the gate stack. The surface-gated SET exhibits the expected Coulomb blockade behavior. However, the leverage of the gate over the SET is limited by defects in the layers above the SET, including interfaces between the Si and oxide, and structural and chemical defects in the Si cap. We propose a more sophisticated gate stack and process flow that is predicted to improve performance in future atomic precision devices.
△ Less
Submitted 11 June, 2020; v1 submitted 20 February, 2020;
originally announced February 2020.
-
Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system
Authors:
T. M. Lu,
L. A. Tracy,
D. Laroche,
S. -H. Huang,
Y. Chuang,
Y. -H. Su,
J. -Y. Li,
C. W. Liu
Abstract:
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show t…
▽ More
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of $\sim2.4\times 10^{10}$ cm$^{-2}$, this ratio grows greater than $1$, resulting in a ferromagnetic ground state at filling factor $ν=2$. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. Such gate-controlled spin-polarizations in the quantum Hall regime opens the door to realizing Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors.
△ Less
Submitted 7 June, 2017;
originally announced June 2017.
-
Signatures of localization in the effective metallic regime of high mobility Si MOSFETs
Authors:
S. Das Sarma,
E. H. Hwang,
K. Kechedzhi,
L. A. Tracy
Abstract:
Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections in the effective metallic regime above the critical density of the so-called two-dimensional metal-insulator transition (2D MIT). The goal is to look for the e…
▽ More
Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections in the effective metallic regime above the critical density of the so-called two-dimensional metal-insulator transition (2D MIT). The goal is to look for the effect of logarithmic insulating localization correction to the metallic temperature dependence in the 2D conductivity so as to distinguish between the 2D MIT being a true quantum phase transition versus being a finite-temperature crossover. We use the Boltzmann theory of resistivity including the temperature dependent screening effect on charged impurities in the system to fit the data. We analyze weak perpendicluar field magnetoresistance data taken in the vicinity of the transition and show that they are consistent with weak localization behavior in the strongly disordered regime $k_F\ell\gtrsim1$. Therefore we supplement the Botzmann transport theory with a logarithmic in temperature quantum weak localization correction and analyze the competition of the insulating temperature dependence of this correction with the metallic temperature dependence of the Boltzmann conductivity. Using this minimal theoretical model we find that the logarithmic insulating correction is masked by the metallic temperature dependence of the Botzmann resistivity and therefore the insulating $\log T$ behavior may be apparent only at very low temperatures which are often beyond the range of temperatures accessible experimentally. Analyzing the low-$T$ experimental Si MOSFET transport data we identify signatures of the putative insulating behavior at low temperature and density in the effective metallic phase.
△ Less
Submitted 15 September, 2014; v1 submitted 11 June, 2014;
originally announced June 2014.
-
Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure
Authors:
L. A. Tracy,
T. W. Hargett,
J. L. Reno
Abstract:
We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hol…
▽ More
We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs.
△ Less
Submitted 6 December, 2013;
originally announced December 2013.
-
Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance
Authors:
R. M. Jock,
S. Shankar,
A. M. Tyryshkin,
Jianhua He,
K. Eng,
K. D. Childs,
L. A. Tracy,
M. P. Lilly,
M. S. Carroll,
S. A. Lyon
Abstract:
We present an electron spin resonance (ESR) approach to characterize shallow electron trap** in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface qualit…
▽ More
We present an electron spin resonance (ESR) approach to characterize shallow electron trap** in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO2 interface quality at low electron densities, where conventional mobility measurements are not possible.
△ Less
Submitted 2 December, 2011; v1 submitted 4 October, 2011;
originally announced October 2011.
-
Triangulating tunneling resonances in a point contact
Authors:
Nathaniel C. Bishop,
Ralph W. Young,
Gregory A. Ten Eyck,
Joel R. Wend,
Edward S. Bielejec,
Kevin Eng,
Lisa A. Tracy,
Michael P. Lilly,
Malcolm S. Carroll,
Carlos Borrás Pinilla,
Harold L. Stalford
Abstract:
We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device structure. We identify which resonances are likely candidates for transport through the antimony donor as opposed to unintentional disorder induced potentials using capacitance triangulation. We determine the capacitances f…
▽ More
We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device structure. We identify which resonances are likely candidates for transport through the antimony donor as opposed to unintentional disorder induced potentials using capacitance triangulation. We determine the capacitances from the resonant feature to each of the conducting gates and the source/drain two dimensional electron gas regions. In our device geometry, these capacitances provide information about the resonance location in three dimensions. Semi-classical electrostatic simulations of capacitance, already used to map quantum dot size and position, identify a combination of location and confinement potential size that satisfy our experimental observations. The sensitivity of simulation to position and size allow us to triangulate possible locations of the resonant level with nanometer resolution. We discuss our results and how they may apply to resonant tunneling through a single donor.
△ Less
Submitted 25 July, 2011;
originally announced July 2011.
-
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
Authors:
T. M. Lu,
N. C. Bishop,
T. Pluym,
J. Means,
P. G. Kotula,
J. Cederberg,
L. A. Tracy,
J. Dominguez,
M. P. Lilly,
M. S. Carroll
Abstract:
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich dielectric interfaces and minimizes background dopants. A mobility of 1.6\times10^5 cm^2/Vs at 5.8\times10^{11}/cm^2 is measured in Hall bars that witness the same…
▽ More
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich dielectric interfaces and minimizes background dopants. A mobility of 1.6\times10^5 cm^2/Vs at 5.8\times10^{11}/cm^2 is measured in Hall bars that witness the same device process flow as the quantum dot. Periodic Coulomb blockade (CB) is measured in a double-top-gated lateral quantum dot nanostructure. The CB terminates with open diamonds up to \pm 10 mV of DC voltage across the device. The devices were fabricated within a 150 mm Si foundry setting that uses implanted ohmics and chemical-vapor-deposited dielectrics, in contrast to previously demonstrated enhancement-mode SiGe/s-Si structures made with AuSb alloyed ohmics and atomic-layer-deposited dielectric. A modified implant, polysilicon formation and annealing conditions were utilized to minimize the thermal budget so that the buried s-Si layer would not be washed out by Ge/Si interdiffusion.
△ Less
Submitted 1 June, 2011;
originally announced June 2011.
-
Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
Authors:
L. A. Tracy,
E. P. Nordberg,
R. W. Young,
C. Borras Pinilla,
H. L. Stalford,
G. A. Ten Eyck,
K. Eng,
K. D. Childs,
J. Stevens,
M. P. Lilly,
M. A. Eriksson,
M. S. Carroll
Abstract:
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied. Intriguingly, these gate voltages themselves are not symmetric. Comparison with numerical simulations indicates that the applied gate voltages se…
▽ More
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied. Intriguingly, these gate voltages themselves are not symmetric. Comparison with numerical simulations indicates that the applied gate voltages serve to offset an intrinsic asymmetry in the physical device. We also show a transition from a large single dot to two well isolated coupled dots, where the central gate of the device is used to controllably tune the interdot coupling.
△ Less
Submitted 29 October, 2010;
originally announced November 2010.
-
Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
Authors:
E. P. Nordberg,
H. L. Stalford,
R. Young,
G. A. Ten Eyck,
K. Eng,
L. A. Tracy,
K. D. Childs,
J. R. Wendt,
R. K. Grubbs,
J. Stevens,
M. P. Lilly,
M. A. Eriksson,
M. S. Carroll
Abstract:
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between t…
▽ More
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated MOS system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. We extract the coupling capacitance between the charge sensor and the quantum dot, and we show that it agrees well with a 3D capacitance model of the integrated sensor and quantum dot system.
△ Less
Submitted 18 September, 2009;
originally announced September 2009.
-
Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
Authors:
E. P. Nordberg,
G. A. Ten Eyck,
H. L. Stalford,
R. P. Muller,
R. W. Young,
K. Eng,
L. A. Tracy,
K. D. Childs,
J. R. Wendt,
R. K. Grubbs,
J. Stevens,
M. P. Lilly,
M. A. Eriksson,
M. S. Carroll
Abstract:
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect…
▽ More
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect densities (i.e. interface traps and fixed oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities for which Si quantum dots do not exhibit parasitic dot formation. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully-qualified CMOS facility.
△ Less
Submitted 11 September, 2009; v1 submitted 19 June, 2009;
originally announced June 2009.
-
The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
Authors:
L. A. Tracy,
E. H. Hwang,
K. Eng,
G. A. Ten Eyck,
E. P. Nordberg,
K. Childs,
M. S. Carroll,
M. P. Lilly,
S. Das Sarma
Abstract:
By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($σ$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times 10^4$ cm$^2$/Vs) Si MOSFETs, we establish that the putative 2D metal-insulator transition is a density-inhomogeneity driven percolation transition where the density…
▽ More
By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($σ$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times 10^4$ cm$^2$/Vs) Si MOSFETs, we establish that the putative 2D metal-insulator transition is a density-inhomogeneity driven percolation transition where the density-dependent conductivity vanishes as $σ(n) \propto (n - n_p)^p$, with the exponent $p \sim 1.2$ being consistent with a percolation transition. The `metallic' behavior of $σ(T)$ for $n > n_p$ is shown to be well-described by a semi-classical Boltzmann theory, and we observe the standard weak localization-induced negative magnetoresistance behavior, as expected in a normal Fermi liquid, in the metallic phase.
△ Less
Submitted 18 May, 2009; v1 submitted 9 November, 2008;
originally announced November 2008.
-
Spin Transition in the Half-Filled Landau Level
Authors:
L. A. Tracy,
J. P. Eisenstein,
L. N. Pfeiffer,
K. W. West
Abstract:
The transition from partial to complete spin polarization of two-dimensional electrons at half filling of the lowest Landau level has been studied using resistively-detected nuclear magnetic resonance (RDNMR). The nuclear spin-lattice relaxation time is observed to be density independent in the partially polarized phase but to increase sharply at the transition to full polarization. At low tempe…
▽ More
The transition from partial to complete spin polarization of two-dimensional electrons at half filling of the lowest Landau level has been studied using resistively-detected nuclear magnetic resonance (RDNMR). The nuclear spin-lattice relaxation time is observed to be density independent in the partially polarized phase but to increase sharply at the transition to full polarization. At low temperatures the RDNMR signal exhibits a strong maximum near the critical density.
△ Less
Submitted 26 March, 2007; v1 submitted 24 September, 2006;
originally announced September 2006.
-
Resistively-Detected NMR in a Two-Dimensional Electron System near $ν= 1$: Clues to the Origin of the Dispersive Lineshape
Authors:
L. A. Tracy,
J. P. Eisenstein,
L. N. Pfeiffer,
K. W. West
Abstract:
Resistively-detected NMR measurements on 2D electron systems near the $ν= 1$ quantum Hall state are reported. In contrast to recent results of Gervais \emph{et al.} [Phys. Rev. Lett. $\bf 94$, 196803 (2005)], a dispersive lineshape is found at all RF powers studied and Korringa-like nuclear spin-lattice relaxation is observed. The shape of the unexplained dispersive lineshape is found to invert…
▽ More
Resistively-detected NMR measurements on 2D electron systems near the $ν= 1$ quantum Hall state are reported. In contrast to recent results of Gervais \emph{et al.} [Phys. Rev. Lett. $\bf 94$, 196803 (2005)], a dispersive lineshape is found at all RF powers studied and Korringa-like nuclear spin-lattice relaxation is observed. The shape of the unexplained dispersive lineshape is found to invert when the temperature derivative of the longitudinal resistance changes sign. This suggests that both Zeeman and thermal effects are important to resistively-detected NMR in this regime.
△ Less
Submitted 6 March, 2006; v1 submitted 14 November, 2005;
originally announced November 2005.
-
Surface Acoustic Wave Propagation and Inhomogeneities in Low Density Two-Dimensional Electron Systems Near the Metal-Insulator Transition
Authors:
L. A. Tracy,
J. P. Eisenstein,
M. P. Lilly,
L. N. Pfeiffer,
K. W. West
Abstract:
We have measured the surface acoustic wave velocity shift in a GaAs/AlGaAs heterostructure containing a two-dimensional electron system (2DES) in a low-density regime ($<$ $10^{10}$ cm$^{-2}$) at zero magnetic field. The interaction of the surface acoustic wave with the 2DES is not well described by a simple model using low-frequency conductivity measurements. We speculate that this conflict is…
▽ More
We have measured the surface acoustic wave velocity shift in a GaAs/AlGaAs heterostructure containing a two-dimensional electron system (2DES) in a low-density regime ($<$ $10^{10}$ cm$^{-2}$) at zero magnetic field. The interaction of the surface acoustic wave with the 2DES is not well described by a simple model using low-frequency conductivity measurements. We speculate that this conflict is a result of inhomogeneities in the 2DES which become very important at low density. This has implications for the putative metal-insulator transition in two dimensions.
△ Less
Submitted 4 July, 2005;
originally announced July 2005.
-
Spin Transition in Strongly Correlated Bilayer Two Dimensional Electron Systems
Authors:
I. B. Spielman,
L. A. Tracy,
J. P. Eisenstein,
L. N. Pfeiffer,
K. W. West
Abstract:
Using a combination of heat pulse and nuclear magnetic resonance techniques we demonstrate that the phase boundary separating the interlayer phase coherent quantum Hall effect at $ν_T = 1$ in bilayer electron gases from the weakly coupled compressible phase depends upon the spin polarization of the nuclei in the host semiconductor crystal. Our results strongly suggest that, contrary to the usual…
▽ More
Using a combination of heat pulse and nuclear magnetic resonance techniques we demonstrate that the phase boundary separating the interlayer phase coherent quantum Hall effect at $ν_T = 1$ in bilayer electron gases from the weakly coupled compressible phase depends upon the spin polarization of the nuclei in the host semiconductor crystal. Our results strongly suggest that, contrary to the usual assumption, the transition is attended by a change in the electronic spin polarization.
△ Less
Submitted 4 October, 2004;
originally announced October 2004.
-
Carrier relaxation dynamics in heavy fermion compounds
Authors:
J. Demsar,
L. A. Tracy,
R. D. Averitt,
S. A. Trugman,
J. L. Sarrao,
A. J. Taylor
Abstract:
The first femtosecond carrier relaxation dynamics studies in heavy fermion compounds are presented. The carrier relaxation time shows a dramatic hundred-fold increase below the Kondo temperature revealing a dramatic sensitivity to the electronic density of states near the Fermi level.
The first femtosecond carrier relaxation dynamics studies in heavy fermion compounds are presented. The carrier relaxation time shows a dramatic hundred-fold increase below the Kondo temperature revealing a dramatic sensitivity to the electronic density of states near the Fermi level.
△ Less
Submitted 12 January, 2002;
originally announced January 2002.
