-
Scientific Machine Learning Framework to Understand Flash Graphene Synthesis
Authors:
Kianoosh Sattari,
Lucas Eddy,
Jacob L. Beckham,
Kevin M. Wyss,
Richard Byfield,
Long Qian,
James M. Tour,
Jian Lin
Abstract:
Flash Joule heating (FJH) is a far-from-equilibrium (FFE) processing method for converting low-value carbon-based materials to flash graphene (FG). Despite its promise in scalability and performance, attempts to explore the reaction mechanism have been limited due to complexity involved in the FFE process. Data-driven machine learning (ML) models effectively account for this complexity, but the mo…
▽ More
Flash Joule heating (FJH) is a far-from-equilibrium (FFE) processing method for converting low-value carbon-based materials to flash graphene (FG). Despite its promise in scalability and performance, attempts to explore the reaction mechanism have been limited due to complexity involved in the FFE process. Data-driven machine learning (ML) models effectively account for this complexity, but the model training requires considerable amount of experimental data. To tackle this challenge, we constructed a scientific ML (SML) framework trained by using both direct processing variables and indirect, physics-informed variables to predict the FG yield. The indirect variables include current-derived features (final current, maximum current, and charge density) predicted from the proxy ML models and reaction temperatures simulated from multi-physics modeling. With the combined indirect features, the final ML model achieves an average R2 score of 0.81 +/- 0.05 and an average RMSE of 12.1% +/- 2.0% in predicting the FG yield, which is significantly higher than the model trained without them (R2 of 0.73 +/- 0.05 and an RMSE of 14.3% +/- 2.0%). Feature importance analysis validates the key roles of these indirect features in determining the reaction outcome. These results illustrate the promise of this SML to elucidate FFE material synthesis outcomes, thus paving a new avenue to processing other datasets from the materials systems involving the same or different FFE processes.
△ Less
Submitted 22 March, 2023;
originally announced March 2023.
-
Scalable synthesis of 2D van der Waals superlattices
Authors:
Michael J. Motala,
Xiang Zhang,
Pawan Kumar,
Eliezer F. Oliveira,
Anna Benton,
Paige Miesle,
Rahul Rao,
Peter R. Stevenson,
David Moore,
Adam Alfieri,
Jason Lynch,
Guanhui Gao,
Sijie Ma,
Hanyu Zhu,
Zhe Wang,
Ivan Petrov,
Eric A. Stach,
W. Joshua Kennedy,
Shiva Vengala,
James M. Tour,
Douglas S. Galvao,
Deep Jariwala,
Christopher Muratore,
Michael Snure,
Pulickel M. Ajayan
, et al. (1 additional authors not shown)
Abstract:
Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with mate…
▽ More
Heterostructure materials form the basis of much of modern electronics, from transistors to lasers and light-emitting diodes. Recent years have seen a renewed focus on creating heterostructures through the vertical integration of two-dimensional materials, including graphene, hexagonal boron nitride, and transition metal dichalcogenides (TMDCs). However, fundamental challenges associated with materials processing have limited material quality and impeded scalability. We demonstrate a method to convert sub-nanometer metal films deposited on silicon and sapphire into TMDC heterostructures through vapor-phase processing. The resulting heterostructures and superlattices exhibit novel properties compared with stand-alone TMDCs, including reduced bandgap, enhanced light-matter coupling, and improved catalytic performance. This robust and scalable synthetic method provides new opportunities to generate a wide range of artificially stacked 2D superlattices with controlled morphology and composition.
△ Less
Submitted 4 November, 2021;
originally announced November 2021.
-
New insights into the mechanism of graphene oxide and radionuclide interaction through vacancy defects
Authors:
Anastasiia S. Kuzenkova,
Anna Yu. Romanchuk,
Alexander L. Trigub,
Konstantin I. Maslakov,
Alexander V. Egorov,
Lucia Amidani,
Carter Kittrelle,
Kristina O. Kvashnina,
James M. Tour,
Alexandr V. Talyzin,
Stepan N. Kalmykov
Abstract:
The sorption of radionuclides by graphene oxides synthesized by different methods was studied through a combination of batch experiments with characterization by microscopic and spectroscopic techniques such as X-ray photoelectron spectroscopy (XPS), attenuated total reflection fourier-transform infrared spectroscopy (ATR-FTIR), high-energy resolution fluorescence detected X-Ray absorption spectro…
▽ More
The sorption of radionuclides by graphene oxides synthesized by different methods was studied through a combination of batch experiments with characterization by microscopic and spectroscopic techniques such as X-ray photoelectron spectroscopy (XPS), attenuated total reflection fourier-transform infrared spectroscopy (ATR-FTIR), high-energy resolution fluorescence detected X-Ray absorption spectroscopy (HERFD-XANES), extended X-ray absorption fine structure (EXAFS) and high resolution transmission electron microscopy (HRTEM).
△ Less
Submitted 6 October, 2020;
originally announced October 2020.
-
Mechanical Properties of Ultralow Density Graphene Oxide/Polydimethylsiloxane Foams
Authors:
Cristiano F. Woellner,
Peter S. Owuor,
Tong Li,
Soumya Vinod,
Sehmus Ozden,
Suppanat Kosolwattana,
Sanjit Bhowmick,
Luong X. Duy,
Rodrigo V. Salvatierra,
Bingqing Wei,
Syed A. S. Asif,
James M. Tour,
Robert Vajtai,
Jun Lou,
Douglas S. Galvao,
Chandra S. Tiwary,
Pulickel. M. Ajayan
Abstract:
Low-density, highly porous graphene/graphene oxide (GO) based-foams have shown high performance in energy absorption applications, even under high compressive deformations. In general, foams are very effective as energy dissipative materials and have been widely used in many areas such as automotive, aerospace and biomedical industries. In the case of graphene-based foams, the good mechanical prop…
▽ More
Low-density, highly porous graphene/graphene oxide (GO) based-foams have shown high performance in energy absorption applications, even under high compressive deformations. In general, foams are very effective as energy dissipative materials and have been widely used in many areas such as automotive, aerospace and biomedical industries. In the case of graphene-based foams, the good mechanical properties are mainly attributed to the intrinsic graphene and/or GO electronic and mechanical properties. Despite the attractive physical properties of graphene/GO based-foams, their structural and thermal stabilities are still a problem for some applications. For instance, they are easily degraded when placed in flowing solutions, either by the collapsing of their layers or just by structural disintegration into small pieces. Recently, a new and scalable synthetic approach to produce low-density 3D macroscopic GO structure interconnected with polydimethylsiloxane (PDMS) polymeric chains (pGO) was proposed. A controlled amount of PDMS is infused into the freeze-dried foam resulting into a very rigid structure with improved mechanical properties, such as tensile plasticity and toughness. The PDMS wets the graphene oxide sheets and acts like a glue bonding PDMS and GO sheets. In order to obtain further insights on mechanisms behind the enhanced mechanical pGO response we carried out fully atomistic molecular dynamics (MD) simulations. Based on MD results, we build up a structural model that can explain the experimentally observed mechanical behavior.
△ Less
Submitted 18 January, 2018;
originally announced January 2018.
-
Nonlinear photoluminescence imaging of isotropic and liquid crystalline dispersions of graphene oxide
Authors:
Bohdan Senyuk,
Natnael Behabtu,
Benjamin G. Pacheco,
Taewoo Lee,
Gabriel Ceriotti,
James M. Tour,
Matteo Pasquali,
Ivan I. Smalyukh
Abstract:
We report a visible-range nonlinear photoluminescence (PL) from graphene oxide (GO) flakes excited by near-infrared femtosecond laser light. PL intensity has nonlinear dependence on the laser power, implying a multiphoton excitation process, and also strongly depends on a linear polarization orientation of excitation light, being at maximum when it is parallel to flakes. We show that PL can be use…
▽ More
We report a visible-range nonlinear photoluminescence (PL) from graphene oxide (GO) flakes excited by near-infrared femtosecond laser light. PL intensity has nonlinear dependence on the laser power, implying a multiphoton excitation process, and also strongly depends on a linear polarization orientation of excitation light, being at maximum when it is parallel to flakes. We show that PL can be used for a fully three-dimensional label-free imaging of isotropic, nematic, and lamellar liquid crystalline dispersions of GO flakes in water. This nonlinear PL is of interest for applications in direct label-free imaging of composite materials and study of orientational ordering in mesomorphic phases formed by these flakes, as well as in biomedical and sensing applications utilizing GO.
△ Less
Submitted 22 December, 2016;
originally announced December 2016.
-
Three-dimensional patterning of solid microstructures through laser reduction of colloidal graphene oxide in liquid-crystalline dispersions
Authors:
Bohdan Senyuk,
Natnael Behabtu,
Angel Martinez,
Taewoo Lee,
Dmitri E. Tsentalovich,
Gabriel Ceriotti,
James M. Tour,
Matteo Pasquali,
Ivan I. Smalyukh
Abstract:
Graphene materials and structures have become an essential part of modern electronics and photovoltaics. However, despite many production methods, applications of graphene-based structures are hindered by high costs, lack of scalability and limitations in spatial patterning. Here we fabricate three-dimensional functional solid microstructures of reduced graphene oxide in a lyotropic nematic liquid…
▽ More
Graphene materials and structures have become an essential part of modern electronics and photovoltaics. However, despite many production methods, applications of graphene-based structures are hindered by high costs, lack of scalability and limitations in spatial patterning. Here we fabricate three-dimensional functional solid microstructures of reduced graphene oxide in a lyotropic nematic liquid crystal of graphene oxide flakes using a pulsed near-infrared laser. This reliable, scalable approach is mask-free, does not require special chemical reduction agents, and can be implemented at ambient conditions starting from aqueous graphene oxide flakes. Orientational ordering of graphene oxide flakes in self-assembled liquid-crystalline phases enables laser patterning of complex, three-dimensional reduced graphene oxide structures and colloidal particles, such as trefoil knots, with "frozen" orientational order of flakes. These structures and particles are mechanically rigid and range from hundreds of nanometres to millimetres in size, as needed for applications in colloids, electronics, photonics and display technology.
△ Less
Submitted 18 December, 2016;
originally announced December 2016.
-
Hydrogen Diffusion and Stabilization in Single-crystal VO2 Micro/nanobeams by Direct Atomic Hydrogenation
Authors:
Jian Lin,
Heng Ji,
Michael W. Swift,
Will J. Hardy,
Zhiwei Peng,
Xiujun Fan,
Andriy H. Nevidomskyy,
James M. Tour,
Douglas Natelson
Abstract:
We report measurements of the diffusion of atomic hydrogen in single crystalline VO2 micro/nanobeams by direct exposure to atomic hydrogen, without catalyst. The atomic hydrogen is generated by a hot filament, and the do** process takes place at moderate temperature (373 K). Undoped VO2 has a metal-to-insulator phase transition at ~340 K between a high-temperature, rutile, metallic phase and a l…
▽ More
We report measurements of the diffusion of atomic hydrogen in single crystalline VO2 micro/nanobeams by direct exposure to atomic hydrogen, without catalyst. The atomic hydrogen is generated by a hot filament, and the do** process takes place at moderate temperature (373 K). Undoped VO2 has a metal-to-insulator phase transition at ~340 K between a high-temperature, rutile, metallic phase and a low-temperature, monoclinic, insulating phase with a resistance exhibiting a semiconductor-like temperature dependence. Atomic hydrogenation results in stabilization of the metallic phase of VO2 micro/nanobeams down to 2 K, the lowest point we could reach in our measurement setup. Based on observing the movement of the hydrogen diffusion front in single crystalline VO2 beams, we estimate the diffusion constant for hydrogen along the c-axis of the rutile phase to be 6.7 x 10^{-10} cm^2/s at approximately 373 K, exceeding the value in isostructural TiO2 by ~ 38x. Moreover, we find that the diffusion constant along the c-axis of the rutile phase exceeds that along the equivalent a-axis of the monoclinic phase by at least three orders of magnitude. This remarkable change in kinetics must originate from the distortion of the "channels" when the unit cell doubles along this direction upon cooling into the monoclinic structure. Ab initio calculation results are in good agreement with the experimental trends in the relative kinetics of the two phases. This raises the possibility of a switchable membrane for hydrogen transport.
△ Less
Submitted 16 September, 2014;
originally announced September 2014.
-
Dynamic response of exchange bias in graphene nanoribbons
Authors:
S. Narayana Jammalamadakaa,
S. S. Rao,
J. Vanacken,
V. V. Moshchalkov,
Wei Lu,
J. M. Tour
Abstract:
The dynamics of magnetic hysteresis, including the training effect and the field sweep rate dependence of the exchange bias, is experimentally investigated in exchange-coupled potassium split graphene nanoribbons (GNRs). We find that, at low field sweep rate, the pronounced absolute training effect is present over a large number of cycles. This is reflected in a gradual decrease of the exchange bi…
▽ More
The dynamics of magnetic hysteresis, including the training effect and the field sweep rate dependence of the exchange bias, is experimentally investigated in exchange-coupled potassium split graphene nanoribbons (GNRs). We find that, at low field sweep rate, the pronounced absolute training effect is present over a large number of cycles. This is reflected in a gradual decrease of the exchange bias with the sequential field cycling. However, at high field sweep rate above 0.5 T/min, the training effect is not prominent. With the increase in field sweep rate, the average value of exchange bias field grows and is found to follow power law behavior. The response of the exchange bias field to the field sweep rate variation is linked to the difference in the time it takes to perform a hysteresis loop measurement compared with the relaxation time of the anti-ferromagnetically aligned spins. The present results may broaden our current understanding of magnetism of GNRs and would be helpful in establishing the GNRs based spintronic devices.
△ Less
Submitted 27 September, 2012;
originally announced September 2012.
-
Terahertz and Infrared Spectroscopy of Gated Large-Area Graphene
Authors:
Lei Ren,
Qi Zhang,
Jun Yao,
Zhengzong Sun,
Ryosuke Kaneko,
Zheng Yan,
Sebastien L. Nanot,
Zhong **,
Iwao Kawayama,
Masayoshi Tonouchi,
James M. Tour,
Junichiro Kono
Abstract:
We have fabricated a centimeter-size single-layer graphene device, with a gate electrode, which can modulate the transmission of terahertz and infrared waves. Using time-domain terahertz spectroscopy and Fourier-transform infrared spectroscopy in a wide frequency range (10-10000 cm^{-1}), we measured the dynamic conductivity change induced by electrical gating and thermal annealing. Both methods w…
▽ More
We have fabricated a centimeter-size single-layer graphene device, with a gate electrode, which can modulate the transmission of terahertz and infrared waves. Using time-domain terahertz spectroscopy and Fourier-transform infrared spectroscopy in a wide frequency range (10-10000 cm^{-1}), we measured the dynamic conductivity change induced by electrical gating and thermal annealing. Both methods were able to effectively tune the Fermi energy, E_F, which in turn modified the Drude-like intraband absorption in the terahertz as well as the '2E_F onset' for interband absorption in the mid-infrared. These results not only provide fundamental insight into the electromagnetic response of Dirac fermions in graphene but also demonstrate the key functionalities of large-area graphene devices that are desired for components in terahertz and infrared optoelectronics.
△ Less
Submitted 21 April, 2012;
originally announced April 2012.
-
Ferromagnetism in graphene nanoribbons: split versus oxidative unzipped ribbons
Authors:
S. S. Rao,
S. Narayana Jammalamadaka,
A. Stesmans,
V. V. Moshchalkov,
J. van Tol,
D. V. Kosynkin,
A. Higginbotham,
J. M. Tour
Abstract:
Two types of graphene nanoribbons: (a) potassium-split graphene nanoribbons (GNRs), and (b) oxidative unzipped and chemically converted graphene nanoribbons (CCGNRs) were investigated for their magnetic properties using the combination of static magnetization and electron spin resonance measurements. The two types of ribbons possess remarkably different magnetic properties. While the low temperatu…
▽ More
Two types of graphene nanoribbons: (a) potassium-split graphene nanoribbons (GNRs), and (b) oxidative unzipped and chemically converted graphene nanoribbons (CCGNRs) were investigated for their magnetic properties using the combination of static magnetization and electron spin resonance measurements. The two types of ribbons possess remarkably different magnetic properties. While the low temperature ferromagnet-like feature is observed in both types of ribbons, such room temperature feature persists only in potassium-split ribbons. The GNRs show negative exchange bias, but the CCGNRs exhibit a 'positive exchange bias'. Electron spin resonance measurements infer that the carbon related defects may responsible for the observed magnetic behaviour in both types of ribbons. Furthermore, proton hyperfine coupling strength has been obtained from hyperfine sublevel correlation experiments performed on the GNRs. Electron spin resonance provides no indications for the presence of potassium (cluster) related signals, emphasizing the intrinsic magnetic nature of the ribbons. Our combined experimental results may infer the coexistence of ferromagnetic clusters with anti-ferromagnetic regions leading to disordered magnetic phase. We discuss the origin of the observed contrast in the magnetic behaviours of these two types of ribbons.
△ Less
Submitted 19 April, 2012;
originally announced April 2012.
-
Enhancement of the Electron Spin Resonance of Single-Walled Carbon Nanotubes by Oxygen Removal
Authors:
W. D. Rice,
R. T. Weber,
A. D. Leonard,
J. M. Tour,
P. Nikolaev,
S. Arepalli,
V. Berka,
A. -L. Tsai,
J. Kono
Abstract:
We have observed a nearly fourfold increase in the electron spin resonance (ESR) signal from an ensemble of single-walled carbon nanotubes (SWCNTs) due to oxygen desorption. By performing temperature-dependent ESR spectroscopy both before and after thermal annealing, we found that the ESR in SWCNTs can be reversibly altered via the molecular oxygen content in the samples. Independent of the presen…
▽ More
We have observed a nearly fourfold increase in the electron spin resonance (ESR) signal from an ensemble of single-walled carbon nanotubes (SWCNTs) due to oxygen desorption. By performing temperature-dependent ESR spectroscopy both before and after thermal annealing, we found that the ESR in SWCNTs can be reversibly altered via the molecular oxygen content in the samples. Independent of the presence of adsorbed oxygen, a Curie-law (spin susceptibility $\propto 1/T$) is seen from $\sim$4 K to 300 K, indicating that the probed spins are finite-level species. For both the pre-annealed and post-annealed sample conditions, the ESR linewidth decreased as the temperature was increased, a phenomenon we identify as motional narrowing. From the temperature dependence of the linewidth, we extracted an estimate of the intertube hop** frequency; for both sample conditions, we found this hop** frequency to be $\sim$100 GHz. Since the spin hop** frequency changes only slightly when oxygen is desorbed, we conclude that only the spin susceptibility, not spin transport, is affected by the presence of physisorbed molecular oxygen in SWCNT ensembles. Surprisingly, no linewidth change is observed when the amount of oxygen in the SWCNT sample is altered, contrary to other carbonaceous systems and certain 1D conducting polymers. We hypothesize that physisorbed molecular oxygen acts as an acceptor ($p$-type), compensating the donor-like ($n$-type) defects that are responsible for the ESR signal in bulk SWCNTs.
△ Less
Submitted 24 October, 2011;
originally announced October 2011.
-
Circular-Polarization Dependent Cyclotron Resonance in Large-Area Graphene in Ultrahigh Magnetic Fields
Authors:
L. G. Booshehri,
C. H. Mielke,
D. G. Rickel,
S. A. Crooker,
Q. Zhang,
L. Ren,
E. H. Haroz,
A. Rustagi,
C. J. Stanton,
Z. **,
Z. Sun,
Z. Yan,
J. M. Tour,
J. Kono
Abstract:
Using ultrahigh magnetic fields up to 170 T and polarized midinfrared radiation with tunable wavelengths from 9.22 to 10.67 um, we studied cyclotron resonance in large-area graphene grown by chemical vapor deposition. Circular-polarization dependent studies reveal strong p-type do** for as-grown graphene, and the dependence of the cyclotron resonance on radiation wavelength allows for a determin…
▽ More
Using ultrahigh magnetic fields up to 170 T and polarized midinfrared radiation with tunable wavelengths from 9.22 to 10.67 um, we studied cyclotron resonance in large-area graphene grown by chemical vapor deposition. Circular-polarization dependent studies reveal strong p-type do** for as-grown graphene, and the dependence of the cyclotron resonance on radiation wavelength allows for a determination of the Fermi energy. Thermal annealing shifts the Fermi energy to near the Dirac point, resulting in the simultaneous appearance of hole and electron cyclotron resonance in the magnetic quantum limit, even though the sample is still p-type, due to graphene's linear dispersion and unique Landau level structure. These high-field studies therefore allow for a clear identification of cyclotron resonance features in large-area, low-mobility graphene samples.
△ Less
Submitted 14 January, 2012; v1 submitted 20 October, 2011;
originally announced October 2011.
-
In Situ Imaging of the Conducting Filament in a Silicon Oxide Resistive Switch
Authors:
Jun Yao,
Lin Zhong,
Douglas Natelson,
James M. Tour
Abstract:
The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of silicon from the silicon oxide matrix. Semi-metallic silicon nanocrystals with stru…
▽ More
The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of silicon from the silicon oxide matrix. Semi-metallic silicon nanocrystals with structural variations from the conventional diamond cubic form of silicon are observed, which likely accounts for the conduction in the filament. The growth and shrinkage of the silicon nanocrystals in response to different electrical stimuli show energetically viable transition processes in the silicon forms, offering evidence to the switching mechanism. The study here also provides insights into the electrical breakdown process in silicon oxide layers, which are ubiquitous in a host of electronic devices.
△ Less
Submitted 17 October, 2011;
originally announced October 2011.
-
Plasmons in nanoscale metal junctions: optical rectification and thermometry
Authors:
Douglas Natelson,
Daniel R. Ward,
Falco Hüser,
Fabian Pauly,
Juan Carlos Cuevas,
David A. Corley,
James M. Tour
Abstract:
We use simultaneous electronic transport and optical characterization measurements to reveal new information about electronic and optical processes in nanoscale junctions fabricated by electromigration. Comparing electronic tunneling and photocurrents allows us to infer the optical frequency potential difference produced by the plasmon response of the junction. Together with the measured tunneling…
▽ More
We use simultaneous electronic transport and optical characterization measurements to reveal new information about electronic and optical processes in nanoscale junctions fabricated by electromigration. Comparing electronic tunneling and photocurrents allows us to infer the optical frequency potential difference produced by the plasmon response of the junction. Together with the measured tunneling conductance, we can then determine the locally enhanced electric field within the junction. In similar structures containing molecules, anti-Stokes and Stokes Raman emission allow us to infer the effective local vibrational and electronic temperatures as a function of DC current, examining heating and dissipation on the nanometer scale.
△ Less
Submitted 6 July, 2011;
originally announced July 2011.
-
Vibrational and electronic heating in nanoscale junctions
Authors:
Daniel R. Ward,
David A. Corley,
James M. Tour,
Douglas Natelson
Abstract:
Understanding and controlling the flow of heat is a major challenge in nanoelectronics. When a junction is driven out of equilibrium by light or the flow of electric charge, the vibrational and electronic degrees of freedom are, in general, no longer described by a single temperature[1-6]. Moreover, characterizing the steady-state vibrational and electronic distributions {\it in situ} is extremely…
▽ More
Understanding and controlling the flow of heat is a major challenge in nanoelectronics. When a junction is driven out of equilibrium by light or the flow of electric charge, the vibrational and electronic degrees of freedom are, in general, no longer described by a single temperature[1-6]. Moreover, characterizing the steady-state vibrational and electronic distributions {\it in situ} is extremely challenging. Here we show that surface-enhanced Raman emission may be used to determine the effective temperatures for both the vibrational modes and the flowing electrons in a biased metallic nanoscale junction decorated with molecules[7]. Molecular vibrations show mode-specific pum** by both optical excitation[8] and dc current[9], with effective temperatures exceeding several hundred Kelvin. AntiStokes electronic Raman emission\cite[10,11] indicates electronic effective temperature also increases to as much as three times its no-current values at bias voltages of a few hundred mV. While the precise effective temperatures are model-dependent, the trends as a function of bias conditions are robust, and allow direct comparisons with theories of nanoscale heating.
△ Less
Submitted 27 June, 2011;
originally announced June 2011.
-
Spatially Resolving Spin-split Edge States of Chiral Graphene Nanoribbons
Authors:
Chenggang Tao,
Liying Jiao,
Oleg V. Yazyev,
Yen-Chia Chen,
Juanjuan Feng,
Xiaowei Zhang,
Rodrigo B. Capaz,
James M. Tour,
Alex Zettl,
Steven G. Louie,
Hongjie Dai,
Michael F. Crommie
Abstract:
A central question in the field of graphene-related research is how graphene behaves when it is patterned at the nanometer scale with different edge geometries. Perhaps the most fundamental shape relevant to this question is the graphene nanoribbon (GNR), a narrow strip of graphene that can have different chirality depending on the angle at which it is cut. Such GNRs have been predicted to exhibit…
▽ More
A central question in the field of graphene-related research is how graphene behaves when it is patterned at the nanometer scale with different edge geometries. Perhaps the most fundamental shape relevant to this question is the graphene nanoribbon (GNR), a narrow strip of graphene that can have different chirality depending on the angle at which it is cut. Such GNRs have been predicted to exhibit a wide range of behaviour (depending on their chirality and width) that includes tunable energy gaps and the presence of unique one-dimensional (1D) edge states with unusual magnetic structure. Most GNRs explored experimentally up to now have been characterized via electrical conductivity, leaving the critical relationship between electronic structure and local atomic geometry unclear (especially at edges). Here we present a sub-nm-resolved scanning tunnelling microscopy (STM) and spectroscopy (STS) study of GNRs that allows us to examine how GNR electronic structure depends on the chirality of atomically well-defined GNR edges. The GNRs used here were chemically synthesized via carbon nanotube (CNT) unzip** methods that allow flexible variation of GNR width, length, chirality, and substrate. Our STS measurements reveal the presence of 1D GNR edge states whose spatial characteristics closely match theoretical expectations for GNR's of similar width and chirality. We observe width-dependent splitting in the GNR edge state energy bands, providing compelling evidence of their magnetic nature. These results confirm the novel electronic behaviour predicted for GNRs with atomically clean edges, and thus open the door to a whole new area of applications exploiting the unique magnetoelectronic properties of chiral GNRs.
△ Less
Submitted 6 January, 2011;
originally announced January 2011.
-
Silicon Oxide is a Non-Innocent Surface for Molecular Electronics and Nanoelectronics Studies
Authors:
Jun Yao,
Lin Zhong,
Douglas Natelson,
James M. Tour
Abstract:
Silicon oxide (SiOx) has been widely used in many electronic systems as a supportive and insulating medium. Here we demonstrate various electrical phenomena such as negative differential resistance, resistive switching and current hysteresis intrinsic to a thin layer of SiOx. These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting t…
▽ More
Silicon oxide (SiOx) has been widely used in many electronic systems as a supportive and insulating medium. Here we demonstrate various electrical phenomena such as negative differential resistance, resistive switching and current hysteresis intrinsic to a thin layer of SiOx. These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting that substantial caution should be paid when studying conduction in electronic systems with SiOx as a component. The actual switching can be the result of SiOx and not the presumed molecular or nanomaterial component. These electrical properties and the underlying mechanisms are discussed in detail.
△ Less
Submitted 23 October, 2010;
originally announced October 2010.
-
Paramagnetic centers in graphene nanoribbons prepared from longitudinal unzip** of carbon nanotubes
Authors:
S. S. Rao,
A. Stesmans,
D. V. Kosynkin,
A. Higginbotham,
J. M. Tour
Abstract:
Electron spin resonance (ESR) investigation of graphene nanoribbons (GNRs) prepared through longitudinal unzip** of multiwalled carbon nanotubes (MWCNTs) indicates the presence of C-related dangling bond centers, exhibiting paramagnetic features. ESR signal broadening from pristine or oxidized graphene nanoribbons (OGNRs) is explained in terms of unresolved hyperfine structure, and in the case o…
▽ More
Electron spin resonance (ESR) investigation of graphene nanoribbons (GNRs) prepared through longitudinal unzip** of multiwalled carbon nanotubes (MWCNTs) indicates the presence of C-related dangling bond centers, exhibiting paramagnetic features. ESR signal broadening from pristine or oxidized graphene nanoribbons (OGNRs) is explained in terms of unresolved hyperfine structure, and in the case of reduced GNRs (RGNRs), the broadening of ESR signal can be due to enhancement in conductivity upon reduction. The spin dynamics observed from ESR linewidth-temperature data reflect a variable range hop** (VRH) mechanism through localized states, consistent with resistance-temperature data.
△ Less
Submitted 25 June, 2010;
originally announced June 2010.
-
Resistive switching in nanogap systems on SiO2 substrates
Authors:
Jun Yao,
Lin Zhong,
Zengxing Zhang,
Tao He,
Zhong **,
Patrick J. Wheeler,
Douglas Natelson,
James M. Tour
Abstract:
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further reduced by using multi-walled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same charact…
▽ More
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further reduced by using multi-walled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same characteristics. This independence of switching on the material compositions of the electrodes, accompanied by observable damage to the SiO2 substrate at the gap region, bespeaks the intrinsic switching from post-breakdown SiO2. It calls for caution when studying resistive switching in nanosystems on oxide substrates, since oxide breakdown extrinsic to the nanosystem can mimic resistive switching. Meanwhile, the high ON/OFF ratio (10E5), fast switching time (2 us, test limit), durable cycles demonstrated show promising memory properties. The intermediate states observed reveal the filamentary conduction nature.
△ Less
Submitted 27 June, 2009;
originally announced June 2009.
-
Universal Scaling of Nonequilibrium Transport in the Kondo Regime of Single Molecule Devices
Authors:
G. D. Scott,
Z. K. Keane,
J. W. Ciszek,
J. M. Tour,
D. Natelson
Abstract:
Scaling laws and universality are often associated with systems exhibiting emergent phenomena possessing a characteristic energy scale. We report nonequilibrium transport measurements on two different types of single-molecule transistor (SMT) devices in the Kondo regime. The conductance at low bias and temperature adheres to a scaling function characterized by two parameters. This result, analog…
▽ More
Scaling laws and universality are often associated with systems exhibiting emergent phenomena possessing a characteristic energy scale. We report nonequilibrium transport measurements on two different types of single-molecule transistor (SMT) devices in the Kondo regime. The conductance at low bias and temperature adheres to a scaling function characterized by two parameters. This result, analogous to that reported recently in semiconductor dots with Kondo temperatures two orders of magnitude lower, demonstrates the universality of this scaling form. We compare the extracted values of the scaling coefficients to previous experimental and theoretical results.
△ Less
Submitted 16 April, 2009;
originally announced April 2009.
-
Etching-dependent reproducible memory switching in vertical SiO2 structures
Authors:
J. Yao,
L. Zhong,
D. Natelson,
J. M. Tour
Abstract:
Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which short voltage pulses (1 $μ$s) can switch the devices between high- and low-impedance states. Through the comparison of current-voltage characteristics in struct…
▽ More
Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which short voltage pulses (1 $μ$s) can switch the devices between high- and low-impedance states. Through the comparison of current-voltage characteristics in structures made by different methods, filamentary conduction at the etched oxide edges is most consistent with the results, providing insights into similar behaviors in metal/SiO/metal systems. High ON/OFF ratios of over 10$^{4}$ were demonstrated.
△ Less
Submitted 25 November, 2008;
originally announced November 2008.
-
Controlling transistor threshold voltages using molecular dipoles
Authors:
Smitha Vasudevan,
Neeti Kapur,
Tao He,
Matthew Neurock,
James M. Tour,
Avik W. Ghosh
Abstract:
We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of long-ranged dipolar electrostatics due to the molecular head-groups, as well as short-ranged charge transfer and interfacial dipole driven by equilibrium band-alignm…
▽ More
We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of long-ranged dipolar electrostatics due to the molecular head-groups, as well as short-ranged charge transfer and interfacial dipole driven by equilibrium band-alignment between the molecular backbone and the reconstructed semiconductor surface atoms.
△ Less
Submitted 21 July, 2008;
originally announced July 2008.
-
Simultaneous measurements of electronic conduction and Raman response in molecular junctions
Authors:
Daniel R. Ward,
Naomi J. Halas,
Jacob W. Ciszek,
James M. Tour,
Yanpeng Wu,
Peter Nordlander,
Douglas Natelson
Abstract:
Electronic conduction through single molecules is affected by the molecular electronic structure as well as by other information that is extremely difficult to assess, such as bonding geometry and chemical environment. The lack of an independent diagnostic technique has long hampered single-molecule conductance studies. We report simultaneous measurement of the conductance and the Raman spectra…
▽ More
Electronic conduction through single molecules is affected by the molecular electronic structure as well as by other information that is extremely difficult to assess, such as bonding geometry and chemical environment. The lack of an independent diagnostic technique has long hampered single-molecule conductance studies. We report simultaneous measurement of the conductance and the Raman spectra of nanoscale junctions used for single-molecule electronic experiments. Blinking and spectral diffusion in the Raman response of both para-mercaptoaniline and a fluorinated oligophenylyne ethynylene correlate in time with changes in the electronic conductance. Finite difference time domain calculations confirm that these correlations do not result from the conductance modifying the Raman enhancement. Therefore, these observations strongly imply that multimodal sensing of individual molecules is possible in these mass-producible nanostructures.
△ Less
Submitted 29 January, 2008;
originally announced January 2008.
-
Stepwise Quenching of Exciton Fluorescence in Carbon Nanotubes by Single Molecule Reactions
Authors:
Laurent Cognet,
Dmitri A. Tsyboulski,
John-David R. Rocha,
Condell D. Doyle,
James M. Tour,
R. Bruce Weisman
Abstract:
Single-molecule chemical reactions with individual single-walled carbon nanotubes were observed through near-infrared photoluminescence microscopy. The emission intensity within distinct submicrometer segments of single nanotubes changes in discrete steps after exposure to acid, base, or diazonium reactants. The steps are uncorrelated in space and time, and reflect the quenching of mobile excito…
▽ More
Single-molecule chemical reactions with individual single-walled carbon nanotubes were observed through near-infrared photoluminescence microscopy. The emission intensity within distinct submicrometer segments of single nanotubes changes in discrete steps after exposure to acid, base, or diazonium reactants. The steps are uncorrelated in space and time, and reflect the quenching of mobile excitons at localized sites of reversible or irreversible chemical attack. Analysis of step amplitudes reveals an exciton diffusional range of about 90 nanometers, independent of nanotube structure. Each exciton visits approximately 104 atomic sites during its lifetime, providing highly efficient sensing of local chemical and physical perturbations.
△ Less
Submitted 22 July, 2007;
originally announced July 2007.
-
Contact effects in polymer field-effect transistors
Authors:
D. Natelson,
B. H. Hamadani,
J. W. Ciszek,
D. A. Corley,
J. M. Tour
Abstract:
Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device performance. We have performed a series of experiments using bottom-contact poly(3-hexylthiophene) (P3HT) OFETs in the shallow channel limit to examine the injection pro…
▽ More
Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device performance. We have performed a series of experiments using bottom-contact poly(3-hexylthiophene) (P3HT) OFETs in the shallow channel limit to examine the injection process. When contacts are ohmic we find that contact resistivity is inversely proportional to carrier mobility, consistent with diffusion-limited injection. However, data from devices with other electrode materials indicate that this simple picture is inadequate to describe contacts with significant barriers. A generalized transmission line method allows the analysis of nonohmic contacts, and we find reasonable agreement with a model for injection that accounts for the hop** nature of conduction in the polymer. Variation of the (unintentional) dopant concentration in the P3HT can significantly alter the injection process via changes in metal-organic band alignment. At very low do** levels, transport suggests the formation of a barrier at the Au/P3HT interface, while Pt/P3HT contacts remain ohmic with comparatively low resistance. We recently observed that self-assembled monolayers on the metal source/drain electrodes can significantly decrease contact resistance and maintain ohmic conduction under conditions that would result in nonohmic, high resistance contacts to untreated electrodes. Finally, we discuss measurements on extremely short channel devices, in the initial steps toward examining transport through individual polymer chains.
△ Less
Submitted 27 July, 2006;
originally announced July 2006.
-
Three-terminal devices to examine single molecule conductance switching
Authors:
Z. K. Keane,
J. W. Ciszek,
J. M. Tour,
D. Natelson
Abstract:
We report electronic transport measurements of single-molecule transistor devices incorporating bipyridyl-dinitro oligophenylene-ethynylene dithiol (BPDN-DT), a molecule known to exhibit conductance switching in other measurement configurations. We observe hysteretic conductance switching in 8% of devices with measurable currents, and find that dependence of the switching properties on gate volt…
▽ More
We report electronic transport measurements of single-molecule transistor devices incorporating bipyridyl-dinitro oligophenylene-ethynylene dithiol (BPDN-DT), a molecule known to exhibit conductance switching in other measurement configurations. We observe hysteretic conductance switching in 8% of devices with measurable currents, and find that dependence of the switching properties on gate voltage is rare when compared to other single-molecule transistor devices. This suggests that polaron formation is unlikely to be responsible for switching in these devices. We discuss this and alternative switching mechanisms.
△ Less
Submitted 14 July, 2006; v1 submitted 24 May, 2006;
originally announced May 2006.
-
Controlling charge injection in organic field-effect transistors using self-assembled monolayers
Authors:
B. H. Hamadani,
D. A. Corley,
J. W. Ciszek,
J. M. Tour,
D. Natelson
Abstract:
We have studied charge injection across the metal/organic semiconductor interface in bottom-contact poly(3-hexylthiophene) (P3HT) field-effect transistors, with Au source and drain electrodes modified by self-assembled monolayers (SAMs) prior to active polymer deposition. By using the SAM to engineer the effective Au work function, we markedly affect the charge injection process. We systematical…
▽ More
We have studied charge injection across the metal/organic semiconductor interface in bottom-contact poly(3-hexylthiophene) (P3HT) field-effect transistors, with Au source and drain electrodes modified by self-assembled monolayers (SAMs) prior to active polymer deposition. By using the SAM to engineer the effective Au work function, we markedly affect the charge injection process. We systematically examine the contact resistivity and intrinsic channel mobility, and show that chemically increasing the injecting electrode work function significantly improves hole injection relative to untreated Au electrodes.
△ Less
Submitted 24 May, 2006;
originally announced May 2006.
-
Kondo resonances and anomalous gate dependence of electronic conduction in single-molecule transistors
Authors:
L. H. Yu,
Z. K. Keane,
J. W. Ciszek,
L. Cheng,
J. M. Tour,
T. Baruah,
M. R. Pederson,
D. Natelson
Abstract:
We report Kondo resonances in the conduction of single-molecule transistors based on transition metal coordination complexes. We find Kondo temperatures in excess of 50 K, comparable to those in purely metallic systems. The observed gate dependence of the Kondo temperature is inconsistent with observations in semiconductor quantum dots and a simple single-dot-level model. We discuss possible exp…
▽ More
We report Kondo resonances in the conduction of single-molecule transistors based on transition metal coordination complexes. We find Kondo temperatures in excess of 50 K, comparable to those in purely metallic systems. The observed gate dependence of the Kondo temperature is inconsistent with observations in semiconductor quantum dots and a simple single-dot-level model. We discuss possible explanations of this effect, in light of electronic structure calculations.
△ Less
Submitted 14 December, 2005; v1 submitted 27 May, 2005;
originally announced May 2005.
-
Inelastic electron tunneling via molecular vibrations in single-molecule transistors
Authors:
L. H. Yu,
Z. K. Keane,
J. W. Ciszek,
L. Cheng,
M. P. Stewart,
J. M. Tour,
D. Natelson
Abstract:
In single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infrared spectroscopy. This is a form of inelastic electron tunneling spectroscopy of single molecules, with the transistor geometry allowing in-situ tuning of the electronic states via a gate electrode. The vibrational fea…
▽ More
In single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infrared spectroscopy. This is a form of inelastic electron tunneling spectroscopy of single molecules, with the transistor geometry allowing in-situ tuning of the electronic states via a gate electrode. The vibrational features shift and change shape as the electronic levels are tuned near resonance, indicating significant modification of the vibrational states. When the molecule contains an unpaired electron, we also observe vibrational satellite features around the Kondo resonance.
△ Less
Submitted 2 August, 2004;
originally announced August 2004.
