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Influence of Rhenium Concentration on Charge Do** and Defect Formation in MoS2
Authors:
Kyle T. Munson,
Riccardo Torsi,
Fatimah Habis,
Lysander Huberich,
Yu-Chuan Lin,
Yue Yuan,
Ke Wang,
Bruno Schuler,
Yuanxi Wang,
John B. Asbury,
Joshua A. Robinson
Abstract:
Substitutionally doped transition metal dichalcogenides (TMDs) are the next step towards realizing TMD-based field effect transistors, sensors, and quantum photonic devices. Here, we report on the influence of Re concentration on charge do** and defect formation in MoS2 monolayers grown by metal-organic chemical vapor deposition. Re-MoS2 films can exhibit reduced sulfur-site defects; however, as…
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Substitutionally doped transition metal dichalcogenides (TMDs) are the next step towards realizing TMD-based field effect transistors, sensors, and quantum photonic devices. Here, we report on the influence of Re concentration on charge do** and defect formation in MoS2 monolayers grown by metal-organic chemical vapor deposition. Re-MoS2 films can exhibit reduced sulfur-site defects; however, as the Re concentration approaches 2 atom%, there is significant clustering of Re in the MoS2. Ab Initio calculations indicate that the transition from isolated Re atoms to Re clusters increases the ionization energy of Re dopants, thereby reducing Re-do** efficacy. Using photoluminescence spectroscopy, we show that Re dopant clustering creates defect states that trap photogenerated excitons within the MoS2 lattice. These results provide insight into how the local concentration of metal dopants affect carrier density, defect formation, and exciton recombination in TMDs, which can aid the development of future TMD-based devices with improved electronic and photonic properties.
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Submitted 3 January, 2024; v1 submitted 28 December, 2023;
originally announced December 2023.
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Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Authors:
Cindy Y. Chen,
Zheng Sun,
Riccardo Torsi,
Ke Wang,
Jessica Kachian,
Bangzhi Liu,
Gilbert B. Rayner Jr,
Zhihong Chen,
Joerg Appenzeller,
Yu-Chuan Lin,
Joshua A. Robinson
Abstract:
Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in next-generation electronics and photonics, precise control over the dielectric environment surrounding the 2D material is critical. The lack of nucleation sites on 2D surfac…
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Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in next-generation electronics and photonics, precise control over the dielectric environment surrounding the 2D material is critical. The lack of nucleation sites on 2D surfaces to form thin, uniform dielectric layers often leads to interfacial defects that degrade the device performance, posing a major roadblock in the realization of 2D-based devices. Here, we demonstrate a wafer-scale, low-temperature process (< 250 °C) using atomic layer deposition (ALD) for the synthesis of uniform, conformal amorphous boron nitride (aBN) thin films. ALD deposition temperatures between 125 and 250 °C result in stoichiometric films with high oxidative stability, yielding a dielectric strength of 8.2 MV/cm. Utilizing a seed-free ALD approach, we form uniform aBN dielectric layers on 2D surfaces and fabricate multiple quantum well structures of aBN/MoS2 and aBN-encapsulated double-gated monolayer (ML) MoS2 field-effect transistors to evaluate the impact of aBN dielectric environment on MoS2 optoelectronic and electronic properties. Our work in scalable aBN dielectric integration paves a way towards realizing the theoretical performance of 2D materials for next-generation electronics.
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Submitted 14 December, 2023;
originally announced December 2023.
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Dynamic STEM-EELS for single atom and defect measurement during electron beam transformations
Authors:
Kevin M. Roccapriore,
Riccardo Torsi,
Joshua Robinson,
Sergei V. Kalinin,
Maxim Ziatdinov
Abstract:
On- and off-axis electron energy loss spectroscopy (EELS) is a powerful method for probing local electronic structure on single atom level. However, many materials undergo electron-beam induced transformation during the scanning transmission electron microscopy (STEM) and spectroscopy, the problem particularly acute for off-axis EELS signals. Here, we propose and operationalize the rapid object de…
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On- and off-axis electron energy loss spectroscopy (EELS) is a powerful method for probing local electronic structure on single atom level. However, many materials undergo electron-beam induced transformation during the scanning transmission electron microscopy (STEM) and spectroscopy, the problem particularly acute for off-axis EELS signals. Here, we propose and operationalize the rapid object detection and action system (RODAS) for dynamic exploration of the structure-property relationships in STEM-EELS. In this approach, the electron beam is used to induce dynamic transformations creating new defect types at sufficiently small rates and avoiding complete material destruction. The deep convolutional neural networks trained via the ensemble learning iterative training (ELIT) approach are used to identify the defects as they form and perform EELS measurements only at specific defect types. Overall, in this case the EEL spectra are collected only at predefined objects of interest, avoiding measurements on the ideal regions or holes. We note that this approach can be extended to identify new defect classes as they appear, allowing for efficient collection of structure-property relationship data via balanced sampling over defect types.
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Submitted 19 October, 2023;
originally announced October 2023.
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Charge State-Dependent Symmetry Breaking of Atomic Defects in Transition Metal Dichalcogenides
Authors:
Feifei Xiang,
Lysander Huberich,
Preston A. Vargas,
Riccardo Torsi,
Jonas Allerbeck,
Anne Marie Z. Tan,
Chengye Dong,
Pascal Ruffieux,
Roman Fasel,
Oliver Gröning,
Yu-Chuan Lin,
Richard G. Hennig,
Joshua A. Robinson,
Bruno Schuler
Abstract:
The functionality of atomic quantum emitters is intrinsically linked to their host lattice coordination. Structural distortions that spontaneously break the lattice symmetry strongly impact their optical emission properties and spin-photon interface. Here we report on the direct imaging of charge state-dependent symmetry breaking of two prototypical atomic quantum emitters in mono- and bilayer MoS…
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The functionality of atomic quantum emitters is intrinsically linked to their host lattice coordination. Structural distortions that spontaneously break the lattice symmetry strongly impact their optical emission properties and spin-photon interface. Here we report on the direct imaging of charge state-dependent symmetry breaking of two prototypical atomic quantum emitters in mono- and bilayer MoS$_2$ by scanning tunneling microscopy (STM) and non-contact atomic force microscopy (nc-AFM). By substrate chemical gating different charge states of sulfur vacancies (Vac$_\text{S}$) and substitutional rhenium dopants (Re$_\text{Mo}$) can be stabilized. Vac$_\text{S}^{-1}$ as well as Re$_\text{Mo}^{0}$ and Re$_\text{Mo}^{-1}$ exhibit local lattice distortions and symmetry-broken defect orbitals attributed to a Jahn-Teller effect (JTE) and pseudo-JTE, respectively. By map** the electronic and geometric structure of single point defects, we disentangle the effects of spatial averaging, charge multistability, configurational dynamics, and external perturbations that often mask the presence of local symmetry breaking.
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Submitted 4 August, 2023;
originally announced August 2023.
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Dilute Rhenium Do** and its Impact on Intrinsic Defects in MoS2
Authors:
Riccardo Torsi,
Kyle T. Munson,
Rahul Pendurthi,
Esteban A. Marques,
Benoit Van Troeye,
Lysander Huberich,
Bruno Schuler,
Maxwell A. Feidler,
Ke Wang,
Geoffrey Pourtois,
Saptarshi Das,
John B. Asbury,
Yu-Chuan Lin,
Joshua A. Robinson
Abstract:
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) do** of MoS2 monolayers with controllable concentrations down to 500 parts-per-million (ppm) by metal-organic chemical vapor deposition (MOCVD). Surprisi…
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Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) do** of MoS2 monolayers with controllable concentrations down to 500 parts-per-million (ppm) by metal-organic chemical vapor deposition (MOCVD). Surprisingly, we discover that even trace amounts of Re lead to a reduction in sulfur site defect density by 5-10x. Ab initio models indicate the free-energy of sulfur-vacancy formation is increased along the MoS2 growth-front when Re is introduced, resulting in an improved stoichiometry. Remarkably, defect photoluminescence (PL) commonly seen in as-grown MOCVD MoS2 is suppressed by 6x at 0.05 atomic percent (at.%) Re and completely quenched with 1 at.% Re. Furthermore, Re-MoS2 transistors exhibit up to 8x higher drain current and enhanced mobility compared to undoped MoS2 because of the improved material quality. This work provides important insights on how dopants affect 2D semiconductor growth dynamics, which can lead to improved crystal quality and device performance.
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Submitted 31 January, 2023;
originally announced February 2023.
