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Direct observation of split-mode exciton-polaritons in a single MoS$_2$ nanotube
Authors:
A. I. Galimov,
D. R. Kazanov,
A. V. Poshakinskiy,
M. V. Rakhlin,
I. A. Eliseyev,
A. A. Toropov,
M. Remskar,
T. V. Shubina
Abstract:
A single nanotube synthesized from a transition metal dichalcogenide (TMDC) exhibits strong exciton resonances and, in addition, can support optical whispering gallery modes. This combination is promising for observing exciton-polaritons without an external cavity. However, traditional energy-momentum-resolved detection methods are unsuitable for this tiny object. Instead, we propose to use split…
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A single nanotube synthesized from a transition metal dichalcogenide (TMDC) exhibits strong exciton resonances and, in addition, can support optical whispering gallery modes. This combination is promising for observing exciton-polaritons without an external cavity. However, traditional energy-momentum-resolved detection methods are unsuitable for this tiny object. Instead, we propose to use split optical modes in a twisted nanotube with the flattened cross-section, where a gradually decreasing gap between the opposite walls leads to a change in mode energy, similar to the effect of the barrier width on the eigenenergies in the double-well potential. Using micro-reflectance spectroscopy, we investigated the rich pattern of polariton branches in single MoS$_2$ tubes with both variable and constant gaps. Observed Rabi splitting in the 40 - 60 meV range is comparable to that for a MoS$_2$ monolayer in a microcavity. Our results, based on the polariton dispersion measurements and polariton dynamics analysis, present a single TMDC nanotube as a perfect polaritonic structure for nanophotonics.
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Submitted 15 January, 2024; v1 submitted 30 December, 2023;
originally announced January 2024.
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Donor-acceptor recombination emission in hydrogen-terminated nanodiamond: Novel single-photon source for room-temperature quantum photonics
Authors:
D. G. Pasternak,
A. M. Romshin,
R. H. Bagramov,
A. I. Galimov,
A. A. Toropov,
D. A. Kalashnikov,
V. Leong,
A. M. Satanin,
O. S. Kudryavtsev,
A. L. Chernev,
V. P. Filonenko,
I. I. Vlasov
Abstract:
In fluorescence spectra of nanodiamonds (NDs) synthesized at high pressure from adamantane and other organic compounds, very narrow (~1 nm) lines of unknown origin are observed in a wide spectroscopic range from ~500 to 800 nm. Here, we propose and experimentally substantiate the hypothesis that these mysterious lines arise from radiative recombination of donor-acceptor pairs (DAPs). To confirm ou…
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In fluorescence spectra of nanodiamonds (NDs) synthesized at high pressure from adamantane and other organic compounds, very narrow (~1 nm) lines of unknown origin are observed in a wide spectroscopic range from ~500 to 800 nm. Here, we propose and experimentally substantiate the hypothesis that these mysterious lines arise from radiative recombination of donor-acceptor pairs (DAPs). To confirm our hypothesis, we study the fluorescence spectra of undoped and nitrogen-doped NDs of different sizes, before and after thermal oxidation of their surface. The results obtained with a high degree of confidence allowed us to conclude that the DAPs are formed through the interaction of donor-like substitutional nitrogen present in the diamond lattice, and a 2D layer of acceptors resulting from the transfer do** effect on the surface of hydrogen-terminated NDs. A specific behavior of the DAP-induced lines was discovered in the temperature range of 100-10 K: their energy increases and most lines are split into 2 or more components with decreasing temperature. It is shown that the majority of the studied DAP emitters are sources of single photons, with an emission rate of up to >1 million counts/s at room temperature, which significantly surpasses that of nitrogen-vacancy and silicon-vacancy centers under the same detection conditions. Despite an observed temporal instability in the emission, the DAP emitters of H-terminated NDs represent a powerful room-temperature single-photon source for quantum optical technologies.
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Submitted 28 October, 2023;
originally announced October 2023.
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Demultiplexed Single-Photon Source with a Quantum Dot Coupled to Microresonator
Authors:
M. V. Rakhlin,
A. I. Galimov,
I. V. Dyakonov,
N. N. Skryabin,
G. V. Klimko,
M. M. Kulagina,
Yu. M. Zadiranov,
S. V. Sorokin,
I. V. Sedova,
Yu. A. Guseva,
D. S. Berezina,
Yu. M. Serov,
N. A. Maleev,
A. G. Kuzmenkov,
S. I. Troshkov,
K. V. Taratorin,
A. K. Skalkin,
S. S. Straupe,
S. P. Kulik,
T. V. Shubina,
A. A. Toropov
Abstract:
The characteristics of a single-photon emitter based on a semiconductor quantum dot, such as their indistinguishability and brightness, depend on the stability of the recombination channel, which can switch spontaneously between exciton and trion. We show that dominant recombination through neutral exciton states can be achieved by careful control of the do** profile near an epitaxial InAs/GaAs…
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The characteristics of a single-photon emitter based on a semiconductor quantum dot, such as their indistinguishability and brightness, depend on the stability of the recombination channel, which can switch spontaneously between exciton and trion. We show that dominant recombination through neutral exciton states can be achieved by careful control of the do** profile near an epitaxial InAs/GaAs quantum dot placed in a columnar microcavity with distributed Bragg reflectors. The Hong-Ou-Mandel experiments carried out in the fabricated device demonstrate the degree of indistinguishability of 91% of successively emitted single photons within 242 ns at an efficiency of 10% inside a single-mode optical fiber. The achieved brightness made it possible to implement spatio-temporal demultiplexing of photons in six independent spatial modes with an in-fiber generation frequency of more than 0.1 Hz.
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Submitted 8 November, 2022;
originally announced November 2022.
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Photoluminescence kinetics of dark and bright excitons in atomically thin MoS$_2$
Authors:
Ilya A. Eliseyev,
Aidar I. Galimov,
Maxim. V. Rakhlin,
Evgenii A. Evropeitsev,
Alexey A. Toropov,
Valery Yu. Davydov,
Sebastian Thiele,
Jörg Pezoldt,
Tatiana V. Shubina
Abstract:
The fine structure of the exciton spectrum, containing optically allowed (bright) and forbidden (dark) exciton states, determines the radiation efficiency in nanostructures. We study time-resolved micro-photoluminescence in MoS$_2$ monolayers and bilayers, both unstrained and compressively strained, in a wide temperature range (10-300 K) to distinguish between exciton states optically allowed and…
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The fine structure of the exciton spectrum, containing optically allowed (bright) and forbidden (dark) exciton states, determines the radiation efficiency in nanostructures. We study time-resolved micro-photoluminescence in MoS$_2$ monolayers and bilayers, both unstrained and compressively strained, in a wide temperature range (10-300 K) to distinguish between exciton states optically allowed and forbidden, both in spin and momentum, as well as to estimate their characteristic decay times and contributions to the total radiation intensity. The decay times were found to either increase or decrease with increasing temperature, indicating the lowest bright or lowest dark state, respectively. Our results unambiguously show that, in an unstrained monolayer, the spin-allowed state is the lowest for a series of A excitons (1.9 eV) with the dark state being < 2 meV higher, and that the splitting energy can increase several times at compression. In contrast, in the indirect exciton series in bilayers (1.5 eV), the spin-forbidden state is the lowest, being about 3 meV below the bright one. The strong effect of strain on the exciton spectrum can explain the large scatter among the published data and must be taken into account to realize the desired optical properties of 2D MoS$_2$.
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Submitted 3 August, 2021; v1 submitted 17 May, 2021;
originally announced May 2021.
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State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods
Authors:
E. A. Evropeitsev,
D. R. Kazanov,
Y. Robin,
A. N. Smirnov,
I. A. Eliseyev,
V. Yu. Davydov,
A. A. Toropov,
S. Nitta,
T. V. Shubina,
H. Amano
Abstract:
Core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) are promising for monolithic white light-emitting diodes and multicolor displays. Such applications, however, are still a challenge because intensity of red band is too weak as compared with blue and green ones. To clarify the problem, we have performed power and temperature dependent, as well as time-resolved measurements of photolumine…
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Core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) are promising for monolithic white light-emitting diodes and multicolor displays. Such applications, however, are still a challenge because intensity of red band is too weak as compared with blue and green ones. To clarify the problem, we have performed power and temperature dependent, as well as time-resolved measurements of photoluminescence (PL) in NRs of different In content and diameter. These studies have shown that the dominant PL bands originate from nonpolar and semipolar QWs, while a broad yellow-red band arises mostly from defects in the GaN core. Intensity of red emission from the polar QWs at the NR tip is fatally small. Our calculation of electromagnetic field distribution inside the NRs shows a low density of photon states in the tip that suppresses the red radiation. We suggest a design of hybrid NRs, in which polar QWs, located inside the GaN core, are pumped by UV-blue radiation of nonpolar QWs. Possibilities of radiative recombination rate enhancement by means of the Purcell effect are discussed.
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Submitted 10 March, 2020;
originally announced March 2020.
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Excitonic emission in van-der-Waals nanotubes of transition metal dichalcogenides
Authors:
T. V. Shubina,
M. Remškar,
V. Yu. Davydov,
K. G. Belyaev,
A. A. Toropov,
B. Gil
Abstract:
Nanotubes (NTs) of transition metal dichalcogenides (TMDs), such as MoS2 and WS2, were first synthesized more than a quarter of a century ago; nevertheless, many of their properties have so far remained basically unknown. This review presents the state of the art in the knowledge of the optical properties of TMD NTs. We first evaluate general properties of multilayered TMD crystals, and analyze av…
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Nanotubes (NTs) of transition metal dichalcogenides (TMDs), such as MoS2 and WS2, were first synthesized more than a quarter of a century ago; nevertheless, many of their properties have so far remained basically unknown. This review presents the state of the art in the knowledge of the optical properties of TMD NTs. We first evaluate general properties of multilayered TMD crystals, and analyze available data on electronic band structure and optical properties of related NTs. Then, the technology for the formation and the structural characteristics of TMD NTs are represented, focusing on the structures synthesized by chemical transport reaction. The core of this work is the presentation of the ability of TMD NTs to emit bright photoluminescence (PL), which has been discovered recently. By means of micro-PL spectroscopy of individual tubes we show that excitonic transitions relevant to both direct and indirect band gaps contribute to the emission spectra of the NTs despite the presence of dozens of monolayers in their walls. We highlight the performance of the tubes as efficient optical resonators, whose confined optical modes strongly affect the emission bands. Finally, a brief conclusion is presented, along with an outlook of the future studies of this novel member of the family of radiative NTs, which have unique potential for different nanophotonics applications.
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Submitted 6 December, 2018; v1 submitted 3 November, 2018;
originally announced November 2018.
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The dynamics of amplified spontaneous emission in CdSe/ZnSe quantum dots
Authors:
D. O. Kundys,
P. Murzyn,
J. P. R. Wells,
A. I. Tartakovskii,
M. S. Skolnick,
Le Si Dang,
E. V. Lutsenko,
N. P. Tarasuk,
O. G. Lyublinskaya,
A. A. Toropov,
S. V. Ivanov
Abstract:
We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 1/cm for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 4…
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We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 1/cm for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 40 ps were measured for the structures with high and low material gains respectively. The difference in the capture times are related to the fact that for the symmetric waveguide, carriers diffuse into the active region from the uppermost ZnMgSSe cladding layer, yielding a longer rise time for the pump-probe signals for this sample.
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Submitted 17 January, 2014;
originally announced January 2014.
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Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures
Authors:
Ya. V. Terentyev,
M. S. Mukhin,
A. A. Toropov,
M. O. Nestoklon,
B. Ya. Meltser,
A. N. Semenov,
V. A. Solovyev,
S. V. Ivanov
Abstract:
Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field applied in Faraday geometry. The polarization degree decreases drastically, changes its sign, and saturates finally at the value of 10% in the limit of either high te…
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Electron spin polarization up to 100% has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions in an InAs matrix via investigation of circularly polarized photoluminescence in an external magnetic field applied in Faraday geometry. The polarization degree decreases drastically, changes its sign, and saturates finally at the value of 10% in the limit of either high temperature or strong excitation. The observed effect is explained in terms of strong Zeeman splitting of the electron conduction band in the InAs matrix and a heavy-hole state confined in the InSb insertion, due to a large intrinsic g-factor of both types of carriers. The hole ground state in a monolayer scale InSb/InAs quantum well, calculated using a tight-binding approach, fits well the observed emission wavelength. Temperature dependence of the emission polarization degree is in good agreement with its theoretical estimation performed in the framework of a proposed phenomenological model.
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Submitted 18 December, 2012;
originally announced December 2012.
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Long-lived electron spin coherence in CdSe/ZnSSe self-assembled quantum dots
Authors:
M. Syperek,
D. R. Yakovlev,
I. A. Yugova,
J. Misiewicz,
I. V. Sedova,
S. V. Sorokin,
A. A. Toropov,
S. V. Ivanov,
M. Bayer
Abstract:
The electron spin coherence in n-doped and undoped, self-assembled CdSe/Zn(S,Se) quantum dots has been studied by time-resolved pump-probe Kerr rotation. Long-lived spin coherence persisting up to 13 ns after spin orientation has been found in the n-doped quantum dots, outlasting significantly the lifetimes of charge neutral and negatively charged excitons of 350 - 530 ps. The electron spin dephas…
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The electron spin coherence in n-doped and undoped, self-assembled CdSe/Zn(S,Se) quantum dots has been studied by time-resolved pump-probe Kerr rotation. Long-lived spin coherence persisting up to 13 ns after spin orientation has been found in the n-doped quantum dots, outlasting significantly the lifetimes of charge neutral and negatively charged excitons of 350 - 530 ps. The electron spin dephasing time as long as 5.6 ns has been measured in a magnetic field of 0.25 T. Hyperfine interaction of resident electrons with a nuclear spin fluctuations is suggested as the main limiting factor for the dephasing time. The efficiency of this mechanism in II-VI and III-V quantum dots is analyzed.
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Submitted 29 September, 2011;
originally announced September 2011.
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Excitonic parameters of GaN studied by time-of-flight spectroscopy
Authors:
T. V. Shubina,
A. A. Toropov,
G. Pozina,
J. P. Bergman,
M. M. Glazov,
N. A. Gippius,
P. Disseix,
J. Leymarie,
B. Gil,
B. Monemar
Abstract:
We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic photon scattering is excluded by using the multiple reflections of the pulses from crystal boundaries. The shapes of these reflexes in the time-energy plane depict the variation of the group velocity induced by excitonic resonances. Modeling of t…
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We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic photon scattering is excluded by using the multiple reflections of the pulses from crystal boundaries. The shapes of these reflexes in the time-energy plane depict the variation of the group velocity induced by excitonic resonances. Modeling of the shapes, as well as other spectra, shows that a homogeneous width of the order of 10 μeV characterizes the exciton-polariton resonances within the crystal. The oscillator strength of A and B exciton-polaritons is determined as 0.0022 and 0.0016, respectively.
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Submitted 14 April, 2011;
originally announced April 2011.
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Delay and distortion of slow light pulses by excitons in ZnO
Authors:
T. V. Shubina,
M. M. Glazov,
N. A. Gippius,
A. A. Toropov,
D. Lagarde,
P. Disseix,
J. Leymarie,
B. Gil,
G. Pozina,
J. P. Bergman,
B. Monemar
Abstract:
Light pulses propagating through ZnO undergo distortions caused by both bound and free excitons. Numerous lines of bound excitons dissect the pulse and induce slowing of light around them, to the extend dependent on their nature. Exciton-polariton resonances determine the overall pulse delay and attenuation. The delay time of the higher-energy edge of a strongly curved light stripe approaches 1.6…
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Light pulses propagating through ZnO undergo distortions caused by both bound and free excitons. Numerous lines of bound excitons dissect the pulse and induce slowing of light around them, to the extend dependent on their nature. Exciton-polariton resonances determine the overall pulse delay and attenuation. The delay time of the higher-energy edge of a strongly curved light stripe approaches 1.6 ns at 3.374 eV with a 0.3 mm propagation length. Modelling the data of cw and time-of-flight spectroscopies has enabled us to determine the excitonic parameters, inherent for bulk ZnO. We reveal the restrictions on these parameters induced by the light attenuation, as well as a discrepancy between the parameters characterizing the surface and internal regions of the crystal.
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Submitted 8 March, 2011;
originally announced March 2011.
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Resonant light delay in GaN with ballistic and diffusive propagation
Authors:
T. V. Shubina,
M. M. Glazov,
A. A. Toropov,
N. A. Gippius,
A. Vasson,
J. Leymarie,
A. Kavokin,
A. Usui,
J. P. Bergman,
G. Pozina,
B. Monemar
Abstract:
We report on a strong delay in light propagation through bulk GaN, detected by time-of-flight spectroscopy. The delay increases resonantly as the photon energy approaches the energy of a neutral-donor bound exciton (BX), resulting in a velocity of light as low as 2100 km/s. In the close vicinity of the BX resonance, the transmitted light contains both ballistic and diffusive components. This phe…
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We report on a strong delay in light propagation through bulk GaN, detected by time-of-flight spectroscopy. The delay increases resonantly as the photon energy approaches the energy of a neutral-donor bound exciton (BX), resulting in a velocity of light as low as 2100 km/s. In the close vicinity of the BX resonance, the transmitted light contains both ballistic and diffusive components. This phenomenon is quantitatively explained in terms of optical dispersion in a medium where resonant light scattering by the BX resonance takes place in addition to the polariton propagation.
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Submitted 26 November, 2007;
originally announced November 2007.
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Resonant spin-dependent electron coupling in a III-V/II-VI heterovalent double quantum well
Authors:
A. A. Toropov,
I. V. Sedova,
S. V. Sorokin,
Ya. V. Terent'ev,
E. L. Ivchenko,
S. V. Ivanov
Abstract:
We report on design, fabrication, and magnetooptical studies of a III-V/II-VI hybrid structure containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The structure design allows one to tune the QW levels into the resonance, thus facilitating penetration of the electron wave function from the diluted magnetic semiconductor ZnCdMnSe QW into the nonmagnetic GaAs QW and vice versa. Magneto…
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We report on design, fabrication, and magnetooptical studies of a III-V/II-VI hybrid structure containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The structure design allows one to tune the QW levels into the resonance, thus facilitating penetration of the electron wave function from the diluted magnetic semiconductor ZnCdMnSe QW into the nonmagnetic GaAs QW and vice versa. Magneto-photoluminescence studies demonstrate level anticrossing and strong intermixing resulting in a drastic renormalization of the electron effective g factor, in perfect agreement with the energy level calculations.
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Submitted 16 November, 2004;
originally announced November 2004.
