Imaging disorder-induced scattering centers in quantum Hall incompressible strip
Authors:
Yihao Wang,
Katsushi Hashimoto,
Toru Tomimatsu,
Yoshiro Hirayama
Abstract:
While the disorder-induced quantum Hall (QH) effect has been studied previously, the effect ofdisorder potential on microscopic features of the integer QH effect remains unclear, particularly forthe incompressible (IC) strip. In this research, a scanning gate microscope incorporated with thenonequilibrium transport technique is used to image the region of QH IC strip that emerges near thesample ed…
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While the disorder-induced quantum Hall (QH) effect has been studied previously, the effect ofdisorder potential on microscopic features of the integer QH effect remains unclear, particularly forthe incompressible (IC) strip. In this research, a scanning gate microscope incorporated with thenonequilibrium transport technique is used to image the region of QH IC strip that emerges near thesample edge. It was found that different mobility samples with varying disorder potentials showedthe same spatial dependence of the IC strip on the filling factor (ν). In the low-mobility samplealone, scattering centers such, bright, dark and annular patterns, alternately appear within the IC strip. These observed patterns are ascribed to inter-LL scattering assisted by resonance tunnelingthrough an impurity bound state. It is concluded that disorder-induced scattering can be effectivelydetected using the applied technique in a low-mobility sample.
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Submitted 21 October, 2020; v1 submitted 22 December, 2019;
originally announced December 2019.
Probing breakdown of topological protection: Filling-factor-dependent evolution of robust quantum Hall incompressible phases
Authors:
T. Tomimatsu,
K. Hashimoto,
S. Taninaka,
S. Nomura,
Y. Hirayama
Abstract:
The integer quantum Hall (QH) effects characterized by topologically quantized and nondissipative transport are caused by an electrically insulating incompressible phase that prevents backscattering between chiral metallic channels. We probed the incompressible area susceptible to the breakdown of topological protection using a scanning gate technique incorporating nonequilibrium transport. The ob…
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The integer quantum Hall (QH) effects characterized by topologically quantized and nondissipative transport are caused by an electrically insulating incompressible phase that prevents backscattering between chiral metallic channels. We probed the incompressible area susceptible to the breakdown of topological protection using a scanning gate technique incorporating nonequilibrium transport. The obtained pattern revealed the filling-factor ($ν$)-dependent evolution of the microscopic incompressible structures located along the edge and in the bulk region. We found that these specific structures, respectively attributed to the incompressible edge strip and bulk localization, show good agreement in terms of $ν$-dependent evolution with a calculation of the equilibrium QH incompressible phases, indicating the robustness of the QH incompressible phases under the nonequilibrium condition. Further, we found that the $ν$ dependency of the incompressible patterns is, in turn, destroyed by a large imposed current during the deep QH effect breakdown. These results demonstrate the ability of our method to image the microscopic transport properties of a topological two-dimensional system.
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Submitted 1 December, 2019; v1 submitted 25 December, 2018;
originally announced December 2018.
