Femtosecond laser writing of the depressed cladding buried channel waveguides in ZnS crystal
Authors:
E. Sorokin,
A. Okhrimchuk,
N. Tolstik,
M. Smayev,
V. Likhov,
V. L. Kalashnikov,
I. T. Sorokina
Abstract:
We report the first direct femtosecond laser-writing of buried channel waveguides in monocrystalline ZnS. We also report the first single-mode Cr:ZnS depressed cladding buried waveguide laser manufactured by femtosecond laser writing. The laser yields 150 mW average power at 2272 nm wavelength with 11% slope efficiency. A depressed cladding waveguide with propagation loss of 0.62 dB/cm at 1030 nm…
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We report the first direct femtosecond laser-writing of buried channel waveguides in monocrystalline ZnS. We also report the first single-mode Cr:ZnS depressed cladding buried waveguide laser manufactured by femtosecond laser writing. The laser yields 150 mW average power at 2272 nm wavelength with 11% slope efficiency. A depressed cladding waveguide with propagation loss of 0.62 dB/cm at 1030 nm allowed to obtain spectral broadening under femtosecond-pum** at 1030 nm.
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Submitted 1 December, 2022;
originally announced December 2022.
Sub-surface modifications in silicon with ultrashort pulsed lasers above 2 microns
Authors:
Roland A. Richter,
Nikolai Tolstik,
Sebastien Rigaud,
Paul Dalla Valle,
Andreas Erbe,
Petra Ebbinghaus,
Ignas Astrauskas,
Vladimir Kalashnikov,
Evgeni Sorokin,
Irina T. Sorokina
Abstract:
Nonlinear optical phenomena in silicon such as self-focusing and multi-photon absorption are strongly dependent on the wavelength, energy and duration of the exciting pulse. Thus, a pronounced wavelength dependence of the sub-surface modifications with ultra-short pulsed lasers exists, especially for wavelengths > 2 $μ$m. This wavelength dependence is investigated for wavelengths in the range of 1…
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Nonlinear optical phenomena in silicon such as self-focusing and multi-photon absorption are strongly dependent on the wavelength, energy and duration of the exciting pulse. Thus, a pronounced wavelength dependence of the sub-surface modifications with ultra-short pulsed lasers exists, especially for wavelengths > 2 $μ$m. This wavelength dependence is investigated for wavelengths in the range of 1950-2400 nm, at a pulse duration between 0.5-10 ps and the pulse energy varying from 1 $μ$J to 1 mJ. Numerical and experimental analyses have been performed on both the surface and sub-surface of Si wafers processed with fibre-based lasers built in-house that operate in this wavelength range. The results have been compared to the literature data at 1550 nm. The analysis carried out has shown that due to a dip in the nonlinear absorption spectrum and a peak in the spectrum of the third-order non-linearity, the wavelengths between 2000 - 2200 nm are more favourable for creating sub-surface modifications in silicon. This is the case even though those wavelengths do not allow as tight a focusing as those at 1550 nm in the linear regime. This problem is compensated by an increased self-focusing due to the nonlinear Kerr-effect around 2100 nm at high light intensities, characteristic for ultra-short pulses.
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Submitted 9 January, 2020; v1 submitted 30 July, 2019;
originally announced July 2019.
