Local spectroscopy of moiré-induced electronic structure in gate-tunable twisted bilayer graphene
Authors:
Dillon Wong,
Yang Wang,
Jeil Jung,
Sergio Pezzini,
Ashley M. DaSilva,
Hsin-Zon Tsai,
Han Sae Jung,
Ramin Khajeh,
Youngkyou Kim,
Juwon Lee,
Salman Kahn,
Sajjad Tollabimazraehno,
Haider Rasool,
Kenji Watanabe,
Takashi Taniguchi,
Alex Zettl,
Shaffique Adam,
Allan H. MacDonald,
Michael F. Crommie
Abstract:
Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported by atomically-smooth and chemically inert hexagonal boron nitride (BN). The high quality of these tBLG devices allows identification of coexisting moiré patter…
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Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported by atomically-smooth and chemically inert hexagonal boron nitride (BN). The high quality of these tBLG devices allows identification of coexisting moiré patterns and moiré super-superlattices produced by graphene-graphene and graphene-BN interlayer interactions. Furthermore, we examine additional tBLG spectroscopic features in the local density of states beyond the first van Hove singularity. Our experimental data is explained by a theory of moiré bands that incorporates ab initio calculations and confirms the strongly non-perturbative character of tBLG interlayer coupling in the small twist-angle regime.
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Submitted 10 October, 2015;
originally announced October 2015.
