-
Electronic structure of SrTi$_{1-x}$V$_x$O$_3$ films studied by ${\it in\ situ}$ photoemission spectroscopy: Screening for a transparent electrode material
Authors:
Tatsuhiko Kanda,
Daisuke Shiga,
Ryu Yukawa,
Naoto Hasegawa,
Duy Khanh Nguyen,
Xianglin Cheng,
Ryosuke Tokunaga,
Miho Kitamura,
Koji Horiba,
Kohei Yoshimatsu,
Hiroshi Kumigashira
Abstract:
This study investigated the electronic structure of SrTi$_{1-x}$V$_x$O$_3$ (STVO) thin films, which are solid solutions of strongly correlated transparent conductive oxide (TCO) SrVO$_3$ and oxide semiconductor SrTiO$_3$, using ${in situ}$ photoemission spectroscopy. STVO is one of the most promising candidates for correlated-metal TCO because it has the capability of optimizing the performance of…
▽ More
This study investigated the electronic structure of SrTi$_{1-x}$V$_x$O$_3$ (STVO) thin films, which are solid solutions of strongly correlated transparent conductive oxide (TCO) SrVO$_3$ and oxide semiconductor SrTiO$_3$, using ${in situ}$ photoemission spectroscopy. STVO is one of the most promising candidates for correlated-metal TCO because it has the capability of optimizing the performance of transparent electrodes by varying ${x}$. Systematic and significant spectral changes were found near the Fermi level (${E_{\rm F}}$) as a function of ${x}$, while the overall electronic structure of STVO is in good agreement with the prediction of band structure calculations. As ${x}$ decreases from 1.0, spectral weight transfer occurs from the coherent band near ${E_{\rm F}}$ to the incoherent states (lower Hubbard band) around 1.0-1.5 eV. Simultaneously, a pseudogap is formed at ${E_{\rm F}}$, indicating a significant reduction in quasiparticle spectral weight within close vicinity of ${E_{\rm F}}$. This pseudogap seems to evolve into an energy gap at ${x}$ = 0.4, suggesting the occurrence of a composition-driven metal-insulator transition. From angle-resolved photoemission spectroscopic results, the carrier concentration ${n}$ changes proportionally as a function of ${x}$ in the metallic range of ${x}$ = 0.6-1.0. In contrast, the mass enhancement factor, which is proportional to the effective mass (${m^*}$), does not change significantly with varying ${x}$. These results suggest that the key factor of ${n/m^*}$ in optimizing the performance of correlated-metal TCO is tuned by ${x}$, highlighting the potential of STVO to achieve the desired TCO performance in the metallic region.
△ Less
Submitted 22 May, 2021;
originally announced May 2021.
-
Thickness dependence of electronic and crystal structures in VO$_2$ ultrathin films: suppression of the collaborative Mott-Peierls transition
Authors:
D. Shiga,
B. E. Yang,
N. Hasegawa,
T. Kanda,
R. Tokunaga,
K. Yoshimatsu,
R. Yukawa,
M. Kitamura,
K. Horiba,
H. Kumigashira
Abstract:
Through ${in~situ}$ photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO$_2$ films coherently grown on TiO$_2$(001) substrates. In the nanostructured films, the balance between the instabilities of a bandlike Peierls transition and a Mott transition is controlled as a function of thickness. The characteristic spectral chang…
▽ More
Through ${in~situ}$ photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO$_2$ films coherently grown on TiO$_2$(001) substrates. In the nanostructured films, the balance between the instabilities of a bandlike Peierls transition and a Mott transition is controlled as a function of thickness. The characteristic spectral change associated with temperature-driven metal-insulator transition in VO$_2$ thick films holds down to 1.5 nm (roughly corresponding to five V atoms along the [001] direction), whereas VO$_2$ films of less than 1.0 nm exhibit insulating nature without V-V dimerization. These results suggest that the delicate balance between a Mott instability and a bandlike Peierls instability is modulated at a scale of a few nanometers by the dimensional crossover effects and confinement effects, which consequently induce the complicated electronic phase diagram of ultrathin VO$_2$ films.
△ Less
Submitted 1 May, 2020;
originally announced May 2020.
-
Bifurcation analysis in an associative memory model
Authors:
Masaki Kawamura,
Ryuji Tokunaga,
Masato Okada
Abstract:
We previously reported the chaos induced by the frustration of interaction in a non-monotonic sequential associative memory model, and showed the chaotic behaviors at absolute zero. We have now analyzed bifurcation in a stochastic system, namely a finite-temperature model of the non-monotonic sequential associative memory model. We derived order-parameter equations from the stochastic microscopi…
▽ More
We previously reported the chaos induced by the frustration of interaction in a non-monotonic sequential associative memory model, and showed the chaotic behaviors at absolute zero. We have now analyzed bifurcation in a stochastic system, namely a finite-temperature model of the non-monotonic sequential associative memory model. We derived order-parameter equations from the stochastic microscopic equations. Two-parameter bifurcation diagrams obtained from those equations show the coexistence of attractors, which do not appear at absolute zero, and the disappearance of chaos due to the temperature effect.
△ Less
Submitted 27 June, 2004; v1 submitted 29 September, 2003;
originally announced September 2003.
-
Low-dimensional chaos induced by frustration in a non-monotonic system
Authors:
Masaki Kawamura,
Ryuji Tokunaga,
Masato Okada
Abstract:
We report a novel mechanism for the occurrence of chaos at the macroscopic level induced by the frustration of interaction, namely frustration-induced chaos, in a non-monotonic sequential associative memory model. We succeed in deriving exact macroscopic dynamical equations from the microscopic dynamics in the case of the thermodynamic limit and prove that two order parameters dominate this larg…
▽ More
We report a novel mechanism for the occurrence of chaos at the macroscopic level induced by the frustration of interaction, namely frustration-induced chaos, in a non-monotonic sequential associative memory model. We succeed in deriving exact macroscopic dynamical equations from the microscopic dynamics in the case of the thermodynamic limit and prove that two order parameters dominate this large-degree-of-freedom system. Two-parameter bifurcation diagrams are obtained from the order-parameter equations. Then we analytically show that the chaos is low-dimensional at the macroscopic level when the system has some degree of frustration, but that the chaos definitely does not occur without the frustration.
△ Less
Submitted 7 April, 2003; v1 submitted 23 May, 2002;
originally announced May 2002.
